摘要:
A method for forming a supported thin layer of non-evaporable getter (NEG) material and a getter device formed thereby are provided. A suspension comprised of non-evaporable getter (NEG) material particles in a dispersing medium is prepared. The NEG material particles in the suspension have a particle size not greater than about 150 .mu.m. The dispersing medium has an aqueous, alcoholic, or hydroalcoholic base and contains not more than about 1 wt % of organic compounds having a boiling temperature of at least about 250.degree. C. The ratio of the weight of the NEG material particles to the weight of the dispersing medium is between about 4:1 and about 1:1. A layer of the suspension is deposited on a carrier by a serigraphic technique. Next, the deposited layer is dried to evaporate volatile components of the dispersing medium and thereby form a dried deposit. Finally, the dried deposit is sintered under vacuum at a temperature between about 800.degree. C. and 1000.degree. C. with a surface of the dried deposit covered with a refractory material to inhibit scaling. Getter devices formed in accordance with this method also are provided.
摘要:
A method for forming a supported thin layer of non-evaporable getter (NEG) material and a getter device formed thereby are provided. A suspension comprised of non-evaporable getter (NEG) material particles in a dispersing medium is prepared. The NEG material particles in the suspension have a particle size not greater than about 150 .mu.m. The dispersing medium has an aqueous, alcoholic, or hydroalcoholic base and contains not more than about 1 wt % of organic compounds having a boiling temperature of at least about 250.degree. C. The ratio of the weight of the NEG material particles to the weight of the dispersing medium is between about 4:1 and about 1:1. A layer of the suspension is deposited on a carrier by a serigraphic technique. Next, the deposited layer is dried to evaporate volatile components of the dispersing medium and thereby form a dried deposit. Finally, the dried deposit is sintered under vacuum at a temperature between about 800.degree. C. and 1000.degree. C. with a surface of the dried deposit covered with a refractory material to inhibit scaling. Getter devices formed in accordance with this method also are provided.
摘要:
A hollow cathode having at least a portion of the inner, outer or both surfaces coated with a layer of a getter material is described. Some methods for the production of the hollow cathode of the invention are also described, which include cathodic and electrophoretic deposition of the getter layer onto the hollow cathode.
摘要:
A process is provided for production of a refrigerating circuit comprising non-evaporable getter material, wherein said getter material, previously introduced into the same circuit, is heated to a temperature of at least 200° C. during or immediately after the circuit evacuating step, at a residual atmospheric gas pressure of not less than 10 mbar, before introduction of the mixture of cooling fluids and before the circuit sealing. Preferred is the use of zirconium-based getter alloys.
摘要:
A hollow cathode having at least a portion of the inner, outer or both surfaces coated with a layer of a getter material is described. Some methods for the production of the hollow cathode of the invention are also described, which include cathodic and electrophoretic deposition of the getter layer onto the hollow cathode.
摘要:
Non-evaporable getter alloys, such as Y 75%-Mn 15%-Al 10%, are provided and can be activated at relatively low temperatures and have good properties in sorbing a wide variety of gases, particularly hydrogen.
摘要:
A method includes releasing mercury in devices requiring mercury, in particular fluorescent lamps. The method includes the use of manganese-mercury compositions.
摘要:
Compositions are disclosed comprising mercury, titanium, copper and one or more of tin, chromium and silicon, useful for the release of mercury in applications requiring the same, in particular in fluorescent lamps. A process for the preparation of these compositions is also disclosed.
摘要:
Getter alloys particularly suitable for hydrogen sorption are described. The getter alloys include a first element consisting of yttrium or a yttrium equivalent mixture, the first element forming at least 30% by atoms of the alloy. A method for removing hydrogen from devices which are sensitive to the presence thereof and hydrogen-sensitive devices which contain the described getter alloys are also described.
摘要:
Getter alloys particularly suitable for hydrogen sorption are described. The getter alloys include a first element consisting of yttrium or a yttrium equivalent mixture, the first element forming at least 30% by atoms of the alloy. A method for removing hydrogen from devices which are sensitive to the presence thereof and hydrogen-sensitive devices which contain the described getter alloys are also described.