公开(公告)号：US20110308551A1

公开(公告)日：2011-12-22

申请号：US13041230

申请日：2011-03-04

申请人： Hua Chung ,  Xizi Dong ,  Kyawwin Jason Maung ,  Hiroji Hanawa ,  Sang Won Kang ,  David H. Quach ,  Donald J.K. Olgado ,  David Bour ,  Wei-Yung Hsu ,  Alexander Tam ,  Anzhong Chang ,  Sumedh Acharya

发明人： Hua Chung ,  Xizi Dong ,  Kyawwin Jason Maung ,  Hiroji Hanawa ,  Sang Won Kang ,  David H. Quach ,  Donald J.K. Olgado ,  David Bour ,  Wei-Yung Hsu ,  Alexander Tam ,  Anzhong Chang ,  Sumedh Acharya

IPC分类号： B08B9/00 ,  B08B3/04

CPC分类号： B08B5/00 ,  C23C16/4405 ,  C23C16/45506 ,  C23C16/45591 ,  H01L21/02041 ,  H01L21/67115 ,  Y10S438/905

摘要： Embodiments of the invention generally relate to apparatus and methods for cleaning chamber components using a cleaning plate. The cleaning plate is adapted to be positioned on a substrate support during a cleaning process, and includes a plurality of turbulence-inducing structures. The turbulence-inducing structures induce a turbulent flow of cleaning gas while the cleaning plate is rotated during a cleaning process. The cleaning plate increases the retention time of the cleaning gas near the showerhead during cleaning. Additionally, the cleaning plate reduces concentration gradients within the cleaning plate to provide a more effective clean. The method includes positioning a cleaning plate adjacent to a showerhead, and introducing cleaning gas to the space between the showerhead and the cleaning plate. A material deposited on the surface of the showerhead is then heated and vaporized in the presence of the cleaning gas, and then exhausted from the processing chamber.

摘要翻译： 本发明的实施例一般涉及使用清洁板清洁腔室部件的设备和方法。 清洁板适于在清洁过程期间定位在基板支撑件上，并且包括多个湍流诱导结构。 湍流诱导结构在清洁过程中清洁板旋转时引起清洁气体的湍流。 在清洁过程中，清洁板增加了喷头附近清洁气体的停留时间。 此外，清洁板减少清洁板内的浓度梯度以提供更有效的清洁。 该方法包括将清洁板定位在与喷头相邻的位置，并将清洁气体引入到喷头和清洁板之间的空间。 然后将沉积在喷头表面上的材料在清洁气体的存在下加热和蒸发，然后从处理室中排出。

公开(公告)号：US20110256315A1

公开(公告)日：2011-10-20

申请号：US12856747

申请日：2010-08-16

申请人： Alexander Tam ,  Anzhong Chang ,  Sumedh Acharya

发明人： Alexander Tam ,  Anzhong Chang ,  Sumedh Acharya

IPC分类号： C23C16/455

CPC分类号： B05B1/18 ,  C23C16/45519 ,  C23C16/45565 ,  C23C16/52 ,  C30B25/14 ,  H01L21/67115

摘要： A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. The apparatus includes a showerhead assembly with separate inlets and manifolds for delivering separate processing gases into a processing volume of the chamber without mixing the gases prior to entering the processing volume. The showerhead includes a plurality of gas distribution devices disposed within a plurality of gas inlets for injecting one of the processing gases into and distributing it across a manifold for uniform delivery into the processing volume of the chamber. Each of the gas distribution devices preferably has a nozzle configured to evenly distribute the processing gas flowing therethrough while minimizing recirculation of the processing gas within the manifold. As a result, improved deposition uniformity is achieved on a plurality of substrates positioned in the processing volume of the processing chamber.

摘要翻译： 提供了可用于化学气相沉积和/或氢化物气相外延（HVPE）沉积的方法和装置。 该装置包括具有单独的入口和歧管的喷头组件，用于在进入处理体积之前将不同的处理气体输送到室的处理体积而不混合气体。 淋浴头包括多个气体分配装置，其设置在多个气体入口内，用于将一个处理气体注入和分配到歧管上，以均匀地输送到腔室的处理容积中。 每个气体分配装置优选地具有喷嘴，喷嘴构造成使流过其中的处理气体均匀地分布，同时最小化歧管内的处理气体的再循环。 结果，在位于处理室的处理容积中的多个基板上实现了改善的沉积均匀性。

公开(公告)号：US20110121503A1

公开(公告)日：2011-05-26

申请号：US12850738

申请日：2010-08-05

申请人： BRIAN H. BURROWS ,  Ronald Stevens ,  Jacob Grayson ,  Joshua J. Podesta ,  Sandeep Nijhawan ,  Lori D. Washington ,  Alexander Tam ,  Sumedh Acharya

发明人： BRIAN H. BURROWS ,  Ronald Stevens ,  Jacob Grayson ,  Joshua J. Podesta ,  Sandeep Nijhawan ,  Lori D. Washington ,  Alexander Tam ,  Sumedh Acharya

IPC分类号： B23Q3/00

CPC分类号： H01L21/67115 ,  C23C16/4412 ,  C23C16/4584 ,  C23C16/481 ,  H01L21/68742 ,  H01L21/68792

摘要： Embodiments of the present invention generally relate to methods and apparatus for chemical vapor deposition (CVD) on a substrate, and, in particular, to a process chamber and components for use in metal organic chemical vapor deposition. The apparatus comprises a chamber body defining a process volume. A showerhead in a first plane defines a top portion of the process volume. A carrier plate extends across the process volume in a second plane forming an upper process volume between the showerhead and the susceptor plate. A transparent material in a third plane defines a bottom portion of the process volume forming a lower process volume between the carrier plate and the transparent material. A plurality of lamps forms one or more zones located below the transparent material. The apparatus provides uniform precursor flow and mixing while maintaining a uniform temperature over larger substrates thus yielding a corresponding increase in throughput.

摘要翻译： 本发明的实施方案一般涉及用于基板上的化学气相沉积（CVD）的方法和装置，特别涉及用于金属有机化学气相沉积中的处理室和组件。 该装置包括限定处理量的室主体。 第一平面中的喷头定义了处理量的顶部。 载体板在第二平面中延伸过程体积，形成在喷头和基座板之间的上过程体积。 在第三平面中的透明材料限定了处理体积的底部，其在承载板和透明材料之间形成较低的处理体积。 多个灯形成位于透明材料下方的一个或多个区域。 该装置提供均匀的前体流动和混合，同时在较大的底物上保持均匀的温度，从而产生相应的生产量的增加。

公开(公告)号：US20100224130A1

公开(公告)日：2010-09-09

申请号：US12779904

申请日：2010-05-13

申请人： Jacob Smith ,  Alexander Tam ,  R. Suryanarayanan Iyer ,  Sean Seutter ,  Binh Tran ,  Nir Merry ,  Adam Brailove ,  Robert Shydo, JR. ,  Robert Andrews ,  Frank Roberts ,  Theodore Smick ,  Geoffrey Ryding

发明人： Jacob Smith ,  Alexander Tam ,  R. Suryanarayanan Iyer ,  Sean Seutter ,  Binh Tran ,  Nir Merry ,  Adam Brailove ,  Robert Shydo, JR. ,  Robert Andrews ,  Frank Roberts ,  Theodore Smick ,  Geoffrey Ryding

IPC分类号： H01L21/46

CPC分类号： H01L21/68792 ,  C23C16/4584 ,  H01L21/67126 ,  H01L21/68742

摘要： A method and apparatus for processing a substrate utilizing a rotating substrate support are disclosed herein. In one embodiment, an apparatus for processing a substrate includes a chamber having a substrate support assembly disposed within the chamber. The substrate support assembly includes a substrate support having a support surface and a heater disposed beneath the support surface. A shaft is coupled to the substrate support and a motor is coupled to the shaft through a rotor to provide rotary movement to the substrate support. A seal block is disposed around the rotor and forms a seal therewith. The seal block has at least one seal and at least one channel disposed along the interface between the seal block and the shaft. A port is coupled to each channel for connecting to a pump. A lift mechanism is coupled to the shaft for raising and lowering the substrate support.

摘要翻译： 本文公开了一种利用旋转衬底支撑件来处理衬底的方法和装置。 在一个实施例中，用于处理衬底的装置包括具有设置在腔室内的衬底支撑组件的室。 衬底支撑组件包括具有支撑表面的衬底支撑件和设置在支撑表面下方的加热器。 轴联接到基板支撑件，并且电机通过转子联接到轴，以向基板支撑件提供旋转运动。 密封块设置在转子周围并与其形成密封。 密封块具有至少一个密封件和沿密封块和轴之间的界面设置的至少一个通道。 端口连接到每个通道以连接到泵。 升降机构联接到轴上以升高和降低基板支撑。

公开(公告)号：US20100215854A1

公开(公告)日：2010-08-26

申请号：US12776351

申请日：2010-05-07

申请人： Brian H. Burrows ,  Alexander Tam ,  Ronald Stevens ,  Jacob Grayson ,  Kenric T. Choi ,  Sumedh Acharya ,  Sandeep Nijhawan ,  Olga Kryliouk ,  Yuriy Melnik

发明人： Brian H. Burrows ,  Alexander Tam ,  Ronald Stevens ,  Jacob Grayson ,  Kenric T. Choi ,  Sumedh Acharya ,  Sandeep Nijhawan ,  Olga Kryliouk ,  Yuriy Melnik

IPC分类号： C23C16/455 ,  C23C16/00 ,  C23C16/08

CPC分类号： C23C16/4488 ,  C23C16/45502 ,  C23C16/45512 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45574 ,  C23C16/45578 ,  C30B25/14 ,  C30B29/403 ,  Y10T117/10

摘要： A method and apparatus that may be utilized in deposition processes, such as hydride vapor phase epitaxial (HVPE) deposition of metal nitride films, are provided. A first set of passages may introduce a metal containing precursor gas. A second set of passages may provide a nitrogen-containing precursor gas. The first and second sets of passages may be interspersed in an effort to separate the metal containing precursor gas and nitrogen-containing precursor gas until they reach a substrate. An inert gas may also be flowed down through the passages to help keep separation and limit reaction at or near the passages, thereby preventing unwanted deposition on the passages.

摘要翻译： 提供了可用于沉积工艺的方法和装置，例如金属氮化物膜的氢化物气相外延（HVPE）沉积。 第一组通道可以引入含金属的前体气体。 第二组通道可以提供含氮前体气体。 第一组和第二组通道可以散布，以分离含金属的前体气体和含氮前体气体，直到它们到达基底。 惰性气体也可以通过通道向下流动，以帮助保持分离并限制通道处或附近的反应，从而防止通道上的不希望的沉积。

公开(公告)号：US20080124463A1

公开(公告)日：2008-05-29

申请号：US11564198

申请日：2006-11-28

申请人： David Bour ,  Lori Washington ,  Sandeep Nijhawan ,  Ronald Stevens ,  Jacob Smith ,  Alexander Tam ,  Nyi O. Myo ,  Steve Park ,  Rosemary Twist ,  Garry Kwong ,  Jie Su

发明人： David Bour ,  Lori Washington ,  Sandeep Nijhawan ,  Ronald Stevens ,  Jacob Smith ,  Alexander Tam ,  Nyi O. Myo ,  Steve Park ,  Rosemary Twist ,  Garry Kwong ,  Jie Su

IPC分类号： C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/45514 ,  C23C16/45572 ,  C23C16/45574

摘要： A gaseous mixture is deposited onto a substrate surface using a showerhead. A first plenum of the showerhead has a plurality of channels fluidicly coupled with an interior of a processing chamber. A second plenum gas flows through a plurality of tubes extending from a second plenum of the showerhead through the channels into the interior of the processing chamber. The diameter of the tubes is smaller than the diameter of the channels such that a first plenum gas flows into the interior of the processing chamber through a space defined between the outer surface of the tubes and the surface of the channels. The length and diameter of the tubes determine the level of distribution and the molar ratio of the first gas and the second gas in the gaseous mixture that is deposited on the surface of the substrate.

摘要翻译： 使用喷头将气体混合物沉积到基底表面上。 喷头的第一增压室具有与处理室的内部流体耦合的多个通道。 第二增压气体流过从喷头的第二增压室通过通道延伸到处理室内部的多个管。 管的直径小于通道的直径，使得第一增压气体通过限定在管的外表面和通道表面之间的空间流入处理室的内部。 管的长度和直径确定沉积在基底表面上的气态混合物中的分布水平和第一气体与第二气体的摩尔比。

公开(公告)号：US08361892B2

公开(公告)日：2013-01-29

申请号：US12815557

申请日：2010-06-15

申请人： Alexander Tam ,  Anzhong Chang ,  Sumedh Acharya

发明人： Alexander Tam ,  Anzhong Chang ,  Sumedh Acharya

IPC分类号： H01L21/36

CPC分类号： B05B1/18 ,  C23C16/45519 ,  C23C16/45565 ,  C23C16/52 ,  C30B25/14 ,  H01L21/67115

摘要： A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, the apparatus a processing chamber that includes a showerhead with separate inlets and channels for delivering separate processing gases into a processing volume of the chamber without mixing the gases prior to entering the processing volume. In one embodiment, the showerhead includes one or more cleaning gas conduits configured to deliver a cleaning gas directly into the processing volume of the chamber while by-passing the processing gas channels. In one embodiment, the showerhead includes a plurality of metrology ports configured to deliver a cleaning gas directly into the processing volume of the chamber while by-passing the processing gas channels. As a result, the processing chamber components can be cleaned more efficiently and effectively than by introducing cleaning gas into the chamber only through the processing gas channels.

摘要翻译： 提供了可用于化学气相沉积和/或氢化物气相外延（HVPE）沉积的方法和装置。 在一个实施例中，该设备包括具有分离的入口和通道的喷头的处理室，用于在进入处理容积之前将不同的处理气体输送到室的处理容积而不混合气体。 在一个实施例中，喷头包括一个或多个清洁气体导管，其构造成在旁路处理气体通道的同时将清洁气体直接输送到室的处理容积中。 在一个实施例中，喷头包括多个计量端口，其配置成在旁路处理气体通道的同时将清洁气体直接输送到室的处理容积中。 结果，与仅通过处理气体通道将清洁气体引入室中相比，可以更有效和有效地清洁处理室部件。

公开(公告)号：US20110256645A1

公开(公告)日：2011-10-20

申请号：US12815557

申请日：2010-06-15

申请人： Alexander Tam ,  Anzhong Chang ,  Sumedh Acharya

发明人： Alexander Tam ,  Anzhong Chang ,  Sumedh Acharya

IPC分类号： H01L21/66 ,  C23C16/00 ,  H01L21/205

CPC分类号： B05B1/18 ,  C23C16/45519 ,  C23C16/45565 ,  C23C16/52 ,  C30B25/14 ,  H01L21/67115

摘要： A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, the apparatus a processing chamber that includes a showerhead with separate inlets and channels for delivering separate processing gases into a processing volume of the chamber without mixing the gases prior to entering the processing volume. In one embodiment, the showerhead includes one or more cleaning gas conduits configured to deliver a cleaning gas directly into the processing volume of the chamber while by-passing the processing gas channels. In one embodiment, the showerhead includes a plurality of metrology ports configured to deliver a cleaning gas directly into the processing volume of the chamber while by-passing the processing gas channels. As a result, the processing chamber components can be cleaned more efficiently and effectively than by introducing cleaning gas into the chamber only through the processing gas channels.

摘要翻译： 提供了可用于化学气相沉积和/或氢化物气相外延（HVPE）沉积的方法和装置。 在一个实施例中，该设备包括具有分离的入口和通道的喷头的处理室，用于在进入处理容积之前将不同的处理气体输送到室的处理容积而不混合气体。 在一个实施例中，喷头包括一个或多个清洁气体导管，其构造成在旁路处理气体通道的同时将清洁气体直接输送到室的处理容积中。 在一个实施例中，喷头包括多个计量端口，其配置成在旁路处理气体通道的同时将清洁气体直接输送到室的处理容积中。 结果，与仅通过处理气体通道将清洁气体引入室中相比，可以更有效和有效地清洁处理室部件。

公开(公告)号：US20110253044A1

公开(公告)日：2011-10-20

申请号：US12831522

申请日：2010-07-07

申请人： Alexander Tam ,  Anzhong Chang ,  Sumedh Acharya

发明人： Alexander Tam ,  Anzhong Chang ,  Sumedh Acharya

IPC分类号： B05C11/10

CPC分类号： B05B1/18 ,  C23C16/45519 ,  C23C16/45565 ,  C23C16/52 ,  C30B25/14 ,  H01L21/67115

摘要： A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, the apparatus is a processing chamber that includes a showerhead with separate inlets and channels for delivering separate processing gases into a processing volume of the chamber without mixing the gases prior to entering the processing volume. In one embodiment, the showerhead includes metrology ports with purge gas assemblies configured and positioned to deliver a purge gas to prevent deposition thereon. In one embodiment, the metrology port is configured to receive a temperature measurement device, and the purge gas assembly is a concentric tube configuration configured to prevent deposition on components of the temperature measurement device. In one embodiment, the metrology port has a sensor window and is configured to receive an optical measurement device, and the purge gas assembly and sensor window are configured to prevent deposition on the sensor window.

摘要翻译： 提供了可用于化学气相沉积和/或氢化物气相外延（HVPE）沉积的方法和装置。 在一个实施例中，该设备是包括具有分离的入口和通道的喷头的处理室，用于在进入处理容积之前将不同的处理气体输送到室的处理容积而不混合气体。 在一个实施例中，喷头包括具有吹扫气体组件的计量端口，其被配置和定位成输送净化气体以防止在其上沉积。 在一个实施例中，测量端口被配置为接收温度测量装置，并且净化气体组件是配置成防止沉积在温度测量装置的部件上的同心管配置。 在一个实施例中，测量端口具有传感器窗口并且被配置为接收光学测量装置，并且净化气体组件和传感器窗口被配置为防止在传感器窗口上沉积。

公开(公告)号：US20090098276A1

公开(公告)日：2009-04-16

申请号：US11873132

申请日：2007-10-16

申请人： Brian H. BURROWS ,  Alexander Tam ,  Ronald Stevens ,  Kenric T. Choi ,  James D. Felsch ,  Jacob Grayson ,  Sumedh Acharya ,  Sandeep Nijhawan ,  Lori D. Washington ,  Nyi O. Myo

发明人： Brian H. BURROWS ,  Alexander Tam ,  Ronald Stevens ,  Kenric T. Choi ,  James D. Felsch ,  Jacob Grayson ,  Sumedh Acharya ,  Sandeep Nijhawan ,  Lori D. Washington ,  Nyi O. Myo

IPC分类号： C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/45514 ,  C23C16/45519 ,  C23C16/45574 ,  C23C16/45578 ,  C30B25/14 ,  C30B29/403 ,  Y10T137/0318 ,  Y10T137/87153

摘要： A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates. A Group III precursor, such as trimethyl gallium, trimethyl aluminum or trimethyl indium and a nitrogen-containing precursor, such as ammonia, are delivered to a plurality of straight channels which isolate the precursor gases. The precursor gases are injected into mixing channels where the gases are mixed before entering a processing volume containing the substrates. Heat exchanging channels are provided for temperature control of the mixing channels to prevent undesirable condensation and reaction of the precursors.

摘要翻译： 提供了可用于化学气相沉积和/或氢化物气相外延（HVPE）沉积的方法和装置。 在一个实施例中，使用金属有机化学气相沉积（MOCVD）工艺在多个基板上沉积III族氮化物膜。 将III族前体，例如三甲基镓，三甲基铝或三甲基铟，以及含氮前体，例如氨，被输送到多个分离前体气体的直通道。 将前体气体注入到混合通道中，在混合通道中气体被混合，然后进入含有底物的处理体积。 提供热交换通道用于混合通道的温度控制，以防止不希望的前体的冷凝和反应。