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    Method for producing a protective structure
    3.
    发明授权
    Method for producing a protective structure 有权
    保护结构的制造方法

    公开(公告)号：US07888232B2

    公开(公告)日：2011-02-15

    申请号：US12120401

    申请日：2008-05-14

    申请人： Andre Schmenn ,  Damian Sojka ,  Carsten Ahrens

    发明人： Andre Schmenn ,  Damian Sojka ,  Carsten Ahrens

    IPC分类号： H01L21/76

    CPC分类号： H01L27/0255 ,  H01L21/22 ,  H01L21/265 ,  H01L29/66121 ,  H01L29/868

    摘要： A protective structure is produced by providing a semiconductor substrate with a doping of a first conductivity type. A semiconductor layer with a doping of a second conductivity type is applied at a surface of the semiconductor substrate. A buried layer with doping of a second conductivity type is formed in a first region of the semiconductor layer, wherein the buried layer is produced at the junction between the semiconductor layer and semiconductor substrate. A first dopant zone with a doping of a first conductivity type is formed in the first region of the semiconductor layer above the buried layer. A second dopant zone with a doping of a second conductivity type is formed in a second region of the semiconductor layer. An electrical insulation is formed between the first region and the second region of the semiconductor layer. A common connection device is formed for the first dopant zone and the second dopant zone.

    摘要翻译： 通过提供具有第一导电类型的掺杂的半导体衬底来制造保护结构。 在半导体衬底的表面上施加具有第二导电类型的掺杂的半导体层。 在半导体层的第一区域中形成具有第二导电类型的掺杂的掩埋层，其中在半导体层和半导体衬底之间的接合处产生掩埋层。 在掩埋层上方的半导体层的第一区域中形成具有第一导电类型掺杂的第一掺杂区。 在半导体层的第二区域中形成具有第二导电类型掺杂的第二掺杂区。 在半导体层的第一区域和第二区域之间形成电绝缘。 形成用于第一掺杂区和第二掺杂区的公共连接装置。

    Protective structure having a semiconductor substrate
    4.
    发明授权
    Protective structure having a semiconductor substrate 有权
    具有半导体衬底的保护结构

    公开(公告)号：US08531011B2

    公开(公告)日：2013-09-10

    申请号：US13566039

    申请日：2012-08-03

    申请人： Andre Schmenn ,  Damian Sojka ,  Carsten Ahrens

    发明人： Andre Schmenn ,  Damian Sojka ,  Carsten Ahrens

    IPC分类号： H01L31/075 ,  H01L31/105 ,  H01L31/117

    CPC分类号： H01L27/0255 ,  H01L21/22 ,  H01L21/265 ,  H01L29/66121 ,  H01L29/868

    摘要： A protective structure is produced by providing a semiconductor substrate having doping of a first conductivity type. A semiconductor layer having doping of a second conductivity type is applied at a surface of the semiconductor substrate. A buried layer with doping of a second conductivity type is formed in a first region of the semiconductor layer, producing a layer at the junction between the semiconductor layer and semiconductor substrate. A first dopant zone having doping of a first conductivity type is formed in the first region of the semiconductor layer above the buried layer. A second dopant zone having doping of a second conductivity type is formed in a second region of the semiconductor layer. An electrical insulation is formed between the first and second regions of the semiconductor layer. A common connection device is formed for the first and second dopant zones.

    摘要翻译： 通过提供具有第一导电类型的掺杂的半导体衬底来制造保护结构。 在半导体衬底的表面上施加具有第二导电类型掺杂的半导体层。 在半导体层的第一区域中形成具有第二导电类型的掺杂的掩埋层，在半导体层和半导体衬底之间的接合处产生一层。 在掩埋层上方的半导体层的第一区域中形成具有第一导电类型掺杂的第一掺杂区。 在半导体层的第二区域中形成具有第二导电类型掺杂的第二掺杂区。 在半导体层的第一和第二区域之间形成电绝缘。 形成用于第一和第二掺杂剂区域的公共连接装置。

    Protective Structure
    5.
    发明申请
    Protective Structure 有权
    保护结构

    公开(公告)号：US20120306060A1

    公开(公告)日：2012-12-06

    申请号：US13566039

    申请日：2012-08-03

    申请人： Andre Schmenn ,  Damian Sojka ,  Carsten Ahrens

    发明人： Andre Schmenn ,  Damian Sojka ,  Carsten Ahrens

    IPC分类号： H01L29/868

    CPC分类号： H01L27/0255 ,  H01L21/22 ,  H01L21/265 ,  H01L29/66121 ,  H01L29/868

    摘要： A protective structure is produced by providing a semiconductor substrate having doping of a first conductivity type. A semiconductor layer having doping of a second conductivity type is applied at a surface of the semiconductor substrate. A buried layer with doping of a second conductivity type is formed in a first region of the semiconductor layer, producing a layer at the junction between the semiconductor layer and semiconductor substrate. A first dopant zone having doping of a first conductivity type is formed in the first region of the semiconductor layer above the buried layer. A second dopant zone having doping of a second conductivity type is formed in a second region of the semiconductor layer. An electrical insulation is formed between the first and second regions of the semiconductor layer. A common connection device is formed for the first and second dopant zones.

    摘要翻译： 通过提供具有第一导电类型的掺杂的半导体衬底来制造保护结构。 在半导体衬底的表面上施加具有第二导电类型掺杂的半导体层。 在半导体层的第一区域中形成具有第二导电类型的掺杂的掩埋层，在半导体层和半导体衬底之间的接合处产生一层。 在掩埋层上方的半导体层的第一区域中形成具有第一导电类型掺杂的第一掺杂区。 在半导体层的第二区域中形成具有第二导电类型掺杂的第二掺杂区。 在半导体层的第一和第二区域之间形成电绝缘。 形成用于第一和第二掺杂剂区域的公共连接装置。

    Method for producing a protective structure
    6.
    发明授权
    Method for producing a protective structure 有权
    保护结构的制造方法

    公开(公告)号：US08263481B2

    公开(公告)日：2012-09-11

    申请号：US12958929

    申请日：2011-04-12

    申请人： Andre Schmenn ,  Damian Sojka ,  Carsten Ahrens

    发明人： Andre Schmenn ,  Damian Sojka ,  Carsten Ahrens

    IPC分类号： H01L21/20 ,  H01L21/36

    CPC分类号： H01L27/0255 ,  H01L21/22 ,  H01L21/265 ,  H01L29/66121 ,  H01L29/868

    摘要： A protective structure is produced by providing a semiconductor substrate with a doping of a first conductivity type. A semiconductor layer with a doping of a second conductivity type is applied at a surface of the semiconductor substrate. A buried layer with doping of a second conductivity type is formed in a first region of the semiconductor layer, wherein the buried layer is produced at the junction between the semiconductor layer and semiconductor substrate. A first dopant zone with a doping of a first conductivity type is formed in the first region of the semiconductor layer above the buried layer. A second dopant zone with a doping of a second conductivity type is formed in a second region of the semiconductor layer. An electrical insulation is formed between the first region and the second region of the semiconductor layer. A common connection device is formed for the first dopant zone and the second dopant zone.

    摘要翻译： 通过提供具有第一导电类型的掺杂的半导体衬底来制造保护结构。 在半导体衬底的表面上施加具有第二导电类型的掺杂的半导体层。 在半导体层的第一区域中形成具有第二导电类型掺杂的掩埋层，其中在半导体层和半导体衬底之间的接合处产生掩埋层。 在掩埋层上方的半导体层的第一区域中形成具有第一导电类型掺杂的第一掺杂区。 在半导体层的第二区域中形成具有第二导电类型掺杂的第二掺杂区。 在半导体层的第一区域和第二区域之间形成电绝缘。 形成用于第一掺杂区和第二掺杂区的公共连接装置。

    Method for Producing a Protective Structure
    7.
    发明申请
    Method for Producing a Protective Structure 有权
    生产保护结构的方法

    公开(公告)号：US20110186972A1

    公开(公告)日：2011-08-04

    申请号：US12958929

    申请日：2011-04-12

    申请人： Andre Schmenn ,  Damian Sojka ,  Carsten Ahrens

    发明人： Andre Schmenn ,  Damian Sojka ,  Carsten Ahrens

    IPC分类号： H01L21/20 ,  H01L29/36

    CPC分类号： H01L27/0255 ,  H01L21/22 ,  H01L21/265 ,  H01L29/66121 ,  H01L29/868

    摘要： A protective structure is produced by providing a semiconductor substrate with a doping of a first conductivity type. A semiconductor layer with a doping of a second conductivity type is applied at a surface of the semiconductor substrate. A buried layer with doping of a second conductivity type is formed in a first region of the semiconductor layer, wherein the buried layer is produced at the junction between the semiconductor layer and semiconductor substrate. A first dopant zone with a doping of a first conductivity type is formed in the first region of the semiconductor layer above the buried layer. A second dopant zone with a doping of a second conductivity type is formed in a second region of the semiconductor layer. An electrical insulation is formed between the first region and the second region of the semiconductor layer. A common connection device is formed for the first dopant zone and the second dopant zone.

    摘要翻译： 通过提供具有第一导电类型的掺杂的半导体衬底来制造保护结构。 在半导体衬底的表面上施加具有第二导电类型的掺杂的半导体层。 在半导体层的第一区域中形成具有第二导电类型掺杂的掩埋层，其中在半导体层和半导体衬底之间的接合处产生掩埋层。 在掩埋层上方的半导体层的第一区域中形成具有第一导电类型掺杂的第一掺杂区。 在半导体层的第二区域中形成具有第二导电类型掺杂的第二掺杂区。 在半导体层的第一区域和第二区域之间形成电绝缘。 形成用于第一掺杂区和第二掺杂区的公共连接装置。

    Capacitor and method for producing a capacitor
    10.
    发明授权
    Capacitor and method for producing a capacitor 有权
    电容器及其制造方法

    公开(公告)号：US07030457B2

    公开(公告)日：2006-04-18

    申请号：US10853740

    申请日：2004-05-25

    申请人： Carsten Ahrens ,  Angelika Geiselbrechtinger ,  Wolfgang Hartung ,  Christian Herzum ,  Reinhard Losehand

    发明人： Carsten Ahrens ,  Angelika Geiselbrechtinger ,  Wolfgang Hartung ,  Christian Herzum ,  Reinhard Losehand

    IPC分类号： H01L29/00

    CPC分类号： H01L29/66181 ,  H01L29/945

    摘要： A capacitor includes a semiconductor substrate in which a trench is formed through which the substrate is doped. A dielectric layer covers the surface of the trench, wherein furthermore an electrically conductive material is arranged in the trench. A first contact structure for contacting the electrically conductive material in the trench in an electrically conductive manner and a second contact structure for contacting the doped semiconductor substrate in an electrically conductive manner are also formed in the capacitor. The capacitor has low series resistance of the electrodes and may be produced in a simple manner.

    摘要翻译： 电容器包括其中形成沟槽的半导体衬底，衬底通过该沟槽被掺杂。 电介质层覆盖沟槽的表面，此外，导电材料还设置在沟槽中。 用于以导电方式接触沟槽中的导电材料的第一接触结构和用于以导电方式接触掺杂半导体衬底的第二接触结构也形成在电容器中。 电容器具有低的电极串联电阻，并且可以以简单的方式制造。