摘要:
Techniques for providing high-capacity, re-workable connections in concentrated photovoltaic devices are provided. In one aspect, a lead frame package for a photovoltaic device is provided that includes a beam shield; and one or more lead frame connectors affixed to the beam shield, wherein the lead frame connectors are configured to provide connection to the photovoltaic device when the photovoltaic device is assembled to the lead frame package. A photovoltaic apparatus is also provided that includes a lead frame package assembled to a photovoltaic device. The lead frame package includes a beam shield and one or more lead frame connectors affixed to the beam shield, wherein the lead frame connectors are configured to provide connection to the photovoltaic device.
摘要:
A convective method is employed to cool a solar concentrator device. The convective method employs formation of a vortex gas circulation inside an enclosure of the solar concentrator device, which is bounded by at least one light-path altering component, sidewalls, and a back panel. Optionally, a heat sink assembly can be provided within the enclosure. Internal convention through the vortex gas circulation transfers the heat generated at a photovoltaic cell to all surfaces of the solar concentrator device to facilitate radiative and/or convective cooling at the outside surfaces of the enclosure.
摘要:
A memory cell device includes a semiconductor nanowire extending, at a first end thereof, from a substrate; the nanowire having a doping profile so as to define a field effect transistor (FET) adjacent the first end, the FET further including a gate electrode at least partially surrounding the nanowire, the doping profile further defining a p-n junction in series with the FET, the p-n junction adjacent a second end of the nanowire; and a phase change material at least partially surrounding the nanowire, at a location corresponding to the p-n junction.
摘要:
A method of concentrating solar energy includes receiving solar energy through a surface of an optically clear shell, guiding the solar energy through a liquid contained in the optically clear shell, folding the solar energy back through the liquid toward a solar receiver, and shifting the solar receiver within the optically clear shell to track the sun, wherein the solar energy collected by the solar receiver is converted into electrical energy.
摘要:
A solar concentration system includes an optically clear shell member having an outer surface and an inner surface, with the inner surface defining a hollow interior portion, a liquid contained within the hollow interior portion of the optically clear shell, and a solar collection system contained within the hollow interior portion of the optically clear shell. The solar collection system includes a tracking system configured and disposed to selectively shift within the hollow interior portion, a reflector member mounted to the tracking system, and a solar receiver mounted to the tracking system. The tracking system being configured and disposed orient the reflector member and the solar receiver to follow a path of the sun enhancing the collection of solar energy.
摘要:
The invention is directed to a method of positioning nanoparticles on a patterned substrate. The method comprises providing a patterned substrate with selectively positioned recesses, and applying a solution or suspension of nanoparticles to the patterned substrate to form a wetted substrate. A wiper member is dragged across the surface of the wetted substrate to remove a portion of the applied nanoparticles from the wetted substrate, and leaving a substantial number of the remaining portion of the applied nanoparticles disposed in the selectively positioned recesses of the substrate. The invention is also directed to a method of making carbon nanotubes from the positioned nanoparticles.
摘要:
A device comprising a doped semiconductor nano-component and a method of forming the device are disclosed. The nano-component is one of a nanotube, nanowire or a nanocrystal film, which may be doped by exposure to an organic amine-containing dopant. Illustrative examples are given for field effect transistors with channels comprising a lead selenide nanowire or nanocrystal film and methods of forming these devices.
摘要:
A device comprising a doped semiconductor nano-component and a method of forming the device are disclosed. The nano-component is one of a nanotube, nanowire or a nanocrystal film, which may be doped by exposure to an organic amine-containing dopant. Illustrative examples are given for field effect transistors with channels comprising a lead selenide nanowire or nanocrystal film and methods of forming these devices.
摘要:
A method for forming self-assembled patterns on a substrate surface is provided. First, a block copolymer layer, which comprises a block copolymer having two or more immiscible polymeric block components, is applied onto a substrate that comprises a substrate surface with a trench therein. The trench specifically includes at least one narrow region flanked by two wide regions, and wherein the trench has a width variation of more than 50%. Annealing is subsequently carried out to effectuate phase separation between the two or more immiscible polymeric block components in the block copolymer layer, thereby forming periodic patterns that are defined by repeating structural units. Specifically, the periodic patterns at the narrow region of the trench are aligned in a predetermined direction and are essentially free of defects. Block copolymer films formed by the above-described method as well as semiconductor structures comprising such block copolymer films are also described.
摘要:
By moving a substrate relative to a shadow mask in a reactive ion etching system, we are able to precisely tailor the thickness of critical layers. To minimize disturbing the plasma, all the mechanical components are kept below the anode. The system is highly reproducible, and can be programmed to yield arbitrary vertical profiles along one horizontal axis. Using silicon-on-insulator substrates, the resonance wavelength was modified as a function of position with better than 1 nm control in the vertical dimension. This technique should prove useful for optical devices where the thickness of the layers controls the device characteristics.