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1.发明申请公开(公告)号：US20080230849A1
公开(公告)日：2008-09-25
申请号：US12130563
申请日：2008-05-30
申请人： Ali Afzali-Ardakani , Cherie R. Kagan , Christopher B. Murray , Robert L. Sandstrom , Dmitri V. Talapin
发明人： Ali Afzali-Ardakani , Cherie R. Kagan , Christopher B. Murray , Robert L. Sandstrom , Dmitri V. Talapin
IPC分类号： H01L21/8234 , H01L21/336
CPC分类号： H01L29/04 , B82Y10/00 , B82Y20/00 , B82Y30/00 , H01L29/0673 , H01L29/78684 , H01L29/7869 , H01L29/78696 , H01L51/0049 , H01L51/0545 , H01L2251/5369 , Y10S977/938
摘要： A device comprising a doped semiconductor nano-component and a method of forming the device are disclosed. The nano-component is one of a nanotube, nanowire or a nanocrystal film, which may be doped by exposure to an organic amine-containing dopant. Illustrative examples are given for field effect transistors with channels comprising a lead selenide nanowire or nanocrystal film and methods of forming these devices.
摘要翻译： 公开了一种包括掺杂半导体纳米元件的器件和形成器件的方法。 纳米组分是纳米管，纳米线或纳米晶体膜之一，其可以通过暴露于含有机胺的掺杂剂掺杂。 给出了具有包含铅硒化物纳米线或纳米晶体膜的通道的场效应晶体管的示例性实例以及形成这些器件的方法。
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2.发明授权公开(公告)号：US07405129B2
公开(公告)日：2008-07-29
申请号：US11138797
申请日：2005-05-26
申请人： Ali Afzali-Ardakani , Cherie R. Kagan , Christopher B. Murray , Robert L. Sandstrom , Dmitri V. Talapin
发明人： Ali Afzali-Ardakani , Cherie R. Kagan , Christopher B. Murray , Robert L. Sandstrom , Dmitri V. Talapin
IPC分类号： H01L21/336
CPC分类号： H01L29/04 , B82Y10/00 , B82Y20/00 , B82Y30/00 , H01L29/0673 , H01L29/78684 , H01L29/7869 , H01L29/78696 , H01L51/0049 , H01L51/0545 , H01L2251/5369 , Y10S977/938
摘要： A device comprising a doped semiconductor nano-component and a method of forming the device are disclosed. The nano-component is one of a nanotube, nanowire or a nanocrystal film, which may be doped by exposure to an organic amine-containing dopant. Illustrative examples are given for field effect transistors with channels comprising a lead selenide nanowire or nanocrystal film and methods of forming these devices.
摘要翻译： 公开了一种包括掺杂半导体纳米元件的器件和形成器件的方法。 纳米组分是纳米管，纳米线或纳米晶体膜之一，其可以通过暴露于含有机胺的掺杂剂掺杂。 给出了具有包含铅硒化物纳米线或纳米晶体膜的通道的场效应晶体管的示例性实例以及形成这些器件的方法。
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公开(公告)号：US07982274B2
公开(公告)日：2011-07-19
申请号：US12130563
申请日：2008-05-30
申请人： Ali Afzali-Ardakani , Cherie R. Kagan , Christopher B. Murray , Robert L. Sandstrom , Dmitri V. Talapin
发明人： Ali Afzali-Ardakani , Cherie R. Kagan , Christopher B. Murray , Robert L. Sandstrom , Dmitri V. Talapin
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/04 , B82Y10/00 , B82Y20/00 , B82Y30/00 , H01L29/0673 , H01L29/78684 , H01L29/7869 , H01L29/78696 , H01L51/0049 , H01L51/0545 , H01L2251/5369 , Y10S977/938
摘要： A device comprising a doped semiconductor nano-component and a method of forming the device are disclosed. The nano-component is one of a nanotube, nanowire or a nanocrystal film, which may be doped by exposure to an organic amine-containing dopant. Illustrative examples are given for field effect transistors with channels comprising a lead selenide nanowire or nanocrystal film and methods of forming these devices.
摘要翻译： 公开了一种包括掺杂半导体纳米元件的器件和形成器件的方法。 纳米组分是纳米管，纳米线或纳米晶体膜之一，其可以通过暴露于含有机胺的掺杂剂掺杂。 给出了具有包含铅硒化物纳米线或纳米晶体膜的通道的场效应晶体管的示例性实例以及形成这些器件的方法。
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4.发明授权Polymeric material, method of forming the polymeric material, and method of forming a thin film using the polymeric material 有权聚合材料，形成聚合物材料的方法以及使用聚合物材料形成薄膜的方法公开(公告)号：US07932128B2
公开(公告)日：2011-04-26
申请号：US11771854
申请日：2007-06-29
IPC分类号： H01L51/40
CPC分类号： H01L51/0508 , C08F12/22 , C08F12/26 , C08F12/30 , C08F112/32 , C09D125/18 , H01L51/004 , H01L51/0558 , C08F220/18 , C08F212/32
摘要： A method of forming a polymeric material with a pendant polycyclic aromatic compound precursor includes forming a polycyclic aromatic compound precursor (e.g., a pentacene precursor) including at least one polymerizable functionality, and polymerizing the polymerizable functionality to form the polymeric material with the pendant precursor.
摘要翻译： 用侧基多环芳族化合物前体形成聚合物材料的方法包括形成包含至少一种可聚合官能团的多环芳族化合物前体（如并五苯前体），并聚合可聚合官能团以形成具有侧挂前体的聚合物材料。
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5.发明申请METHOD OF PLACING A SEMICONDUCTING NANOSTRUCTURE AND SEMICONDUCTOR DEVICE INCLUDING THE SEMICONDUCTING NANOSTRUCTURE 有权放置半导体纳米结构的方法和包括半导体纳米结构的半导体器件公开(公告)号：US20100044678A1
公开(公告)日：2010-02-25
申请号：US12195524
申请日：2008-08-21
CPC分类号： H01L51/0049 , B82Y10/00 , H01L51/0012
摘要： A method of placing a functionalized semiconducting nanostructure, includes functionalizing a semiconducting nanostructure including one of a nanowire and a nanocrystal, with an organic functionality including a functional group for bonding to a bonding surface, dispersing the functionalized semiconducting nanostructure in a solvent to form a dispersion, and depositing the dispersion onto the bonding surface.
摘要翻译： 放置功能化半导体纳米结构的方法包括使包括纳米线和纳米晶体之一的半导体纳米结构官能化，具有包括键合表面的官能团的有机官能团，将官能化的半导体纳米结构分散在溶剂中以形成分散体 ，并将该分散体沉积到粘合表面上。
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6.发明授权Complexes of carbon nanotubes and fullerenes with molecular-clips and use thereof 有权碳纳米管和富勒烯与分子夹的复合物及其用途公开(公告)号：US07867469B2
公开(公告)日：2011-01-11
申请号：US12776861
申请日：2010-05-10
CPC分类号： B82Y40/00 , B82Y30/00 , C01B32/152 , C01B32/174 , C01B2202/28 , C01B2202/36 , Y10S977/84 , Y10S977/842 , Y10S977/845 , Y10S977/847 , Y10S977/877 , Y10S977/895 , Y10S977/896
摘要： Separation of carbon nanotubes or fullerenes according to diameter through non-covalent pi-pi interaction with molecular clips is provided. Molecular clips are prepared by Diels-Alder reaction of polyacenes with a variety of dienophiles. The pi-pi complexes of carbon nanotubes with molecular clips are also used for selective placement of carbon nanotubes and fullerenes on substrates.
摘要翻译： 提供了通过与分子夹的非共价π-π相互作用直接分离碳纳米管或富勒烯。 分子夹是通过狄尔斯 - 阿尔德（Duels-Alder）反应制备的，其中多烯与多种亲双烯体的反应。 具有分子夹的碳纳米管的π-π络合物也用于在基底上选择性地放置碳纳米管和富勒烯。
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7.发明申请PENTACENE-CARBON NANOTUBE COMPOSITE, METHOD OF FORMING THE COMPOSITE, AND SEMICONDUCTOR DEVICE INCLUDING THE COMPOSITE 有权双酚碳纳米管复合材料，形成复合材料的方法和包括复合材料的半导体器件公开(公告)号：US20090272967A1
公开(公告)日：2009-11-05
申请号：US12113064
申请日：2008-04-30
CPC分类号： H01L51/0055 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/174 , C01B2202/02 , C01B2202/22 , C01P2004/13 , C01P2004/133 , C01P2004/61 , C07C15/20 , C07C2603/52 , H01L51/0003 , H01L51/0049 , H01L51/0541 , H01L51/0545 , Y02E10/549
摘要： A composite material includes a carbon nanotube, and plural pentacene molecules bonded to the carbon nanotube. A method of forming the composite layer, includes depositing on a substrate a dispersion of soluble pentacene precursor and carbon nanotubes, heating the dispersion to remove solvent from the dispersion, heating the substrate to convert the pentacene precursor to pentacene and form the carbon nanotube-pentacene composite layer.
摘要翻译： 复合材料包括碳纳米管和与碳纳米管结合的多个并五苯分子。 一种形成复合层的方法，包括在基底上沉积可溶性并五苯前体和碳纳米管的分散体，加热分散体以从分散体中除去溶剂，加热底物以将并五苯前体转化为并五苯并形成碳纳米管 - 并五苯 复合层。
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8.发明申请POLYMERIC MATERIAL, METHOD OF FORMING THE POLYMERIC MATERIAL, AND METHOD OF FORMING A THIN FILM USING THE POLYMERIC MATERIAL 有权聚合物质，聚合物的形成方法以及使用聚合物质形成薄膜的方法公开(公告)号：US20090001355A1
公开(公告)日：2009-01-01
申请号：US11771854
申请日：2007-06-29
CPC分类号： H01L51/0508 , C08F12/22 , C08F12/26 , C08F12/30 , C08F112/32 , C09D125/18 , H01L51/004 , H01L51/0558 , C08F220/18 , C08F212/32
摘要： A method of forming a polymeric material with a pendant polycyclic aromatic compound precursor includes forming a polycyclic aromatic compound precursor (e.g., a pentacene precursor) including at least one polymerizable functionality, and polymerizing the polymerizable functionality to form the polymeric material with the pendant precursor.
摘要翻译： 用侧基多环芳族化合物前体形成聚合物材料的方法包括形成包含至少一种可聚合官能团的多环芳族化合物前体（如并五苯前体），并聚合可聚合官能团以形成具有侧挂前体的聚合物材料。
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9.发明授权Method of placing a semiconducting nanostructure and semiconductor device including the semiconducting nanostructure 有权放置半导体纳米结构和包括半导体纳米结构的半导体器件的方法公开(公告)号：US08604559B2
公开(公告)日：2013-12-10
申请号：US13077216
申请日：2011-03-31
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L29/06 , H01L31/113
CPC分类号： H01L51/0049 , B82Y10/00 , H01L51/0012
摘要： A semiconductor device includes a bonding surface, a semiconducting nanostructure including one of a nanowire and a nanocrystal, which is formed on the bonding surface, and a source electrode and a drain electrode which are formed on the nanostructure such that the nanostructure is electrically connected to the source and drain electrodes.
摘要翻译： 半导体器件包括形成在接合表面上的接合表面，包括纳米线和纳米晶体之一的半导体纳米结构，以及形成在纳米结构上的源电极和漏电极，使得纳米结构电连接到 源极和漏极。
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公开(公告)号：US20120308933A1
公开(公告)日：2012-12-06
申请号：US13586475
申请日：2012-08-15
IPC分类号： G03F7/20
摘要： The invention is directed to a radiation sensitive compound comprising a surface binding group proximate to one end of the compound for attachment to a substrate, and a metal binding group proximate to an opposite end of the compound. The metal binding group is not radiation sensitive. The radiation sensitive compound also includes a body portion disposed between the surface binding group and the metal binding group, and a radiation sensitive group positioned in the body portion or adjacent to the metal binding group. The surface binding group is capable of attaching to a substrate selected from a metal, a metal oxide, or a semiconductor material.
摘要翻译： 本发明涉及一种辐射敏感化合物，其包含接近化合物一端的表面结合基团，用于连接至底物，以及靠近化合物相对端的金属结合基团。 金属结合组不辐射敏感。 辐射敏感化合物还包括设置在表面结合基团和金属结合基团之间的主体部分和位于主体部分中或与金属结合基团相邻的辐射敏感组。 表面结合基团能够附着于选自金属，金属氧化物或半导体材料的基板。
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