公开(公告)号：US20110312176A1

公开(公告)日：2011-12-22

申请号：US12820543

申请日：2010-06-22

申请人： Ali Afzali-Ardakani ,  Shafaat Ahmed ,  Hariklia Deligianni ,  Dario L. Goldfarb ,  Stefan Harrer ,  Binquan Luan ,  Glenn J. Martyna ,  Hongbo Peng ,  Stanislav Polonsky ,  Stephen Rossnagel ,  Xiaoyan Shao ,  Gustavo A. Stolovitzky

发明人： Ali Afzali-Ardakani ,  Shafaat Ahmed ,  Hariklia Deligianni ,  Dario L. Goldfarb ,  Stefan Harrer ,  Binquan Luan ,  Glenn J. Martyna ,  Hongbo Peng ,  Stanislav Polonsky ,  Stephen Rossnagel ,  Xiaoyan Shao ,  Gustavo A. Stolovitzky

IPC分类号： H01L21/283 ,  H01L21/441 ,  C23C28/00 ,  C30B23/02 ,  C23C14/34 ,  B05D3/14 ,  B05D5/12 ,  B05D3/06

CPC分类号： B82Y10/00 ,  H01L21/76834 ,  H01L29/0665 ,  H01L51/0093 ,  H01L51/0504 ,  H01L51/102

摘要： Accordingly, the present invention provides a method of forming an electrode having reduced corrosion and water decomposition on a surface thereof. A substrate which has a conductive layer disposed thereon is provided and the conductive layer has an oxide layer with an exposed surface. The exposed surface of the oxide layer contacts a solution of an organic surface active compound in an organic solvent to form a protective layer of the organic surface active compound over the oxide layer. The protective layer has a thickness of from about 0.5 nm to about 5 nm and ranges therebetween depending on a chemical structure of the surface active compound.

摘要翻译： 因此，本发明提供一种在其表面上形成具有降低的腐蚀和水分解的电极的方法。 提供了具有设置在其上的导电层的衬底，并且导电层具有具有暴露表面的氧化物层。 氧化物层的暴露表面接触有机表面活性化合物在有机溶剂中的溶液，以在氧化物层上形成有机表面活性化合物的保护层。 根据表面活性化合物的化学结构，保护层的厚度为约0.5nm至约5nm，并且其范围。

公开(公告)号：US08354336B2

公开(公告)日：2013-01-15

申请号：US12820543

申请日：2010-06-22

申请人： Ali Afzali-Ardakani ,  Shafaat Ahmed ,  Hariklia Deligianni ,  Dario L. Goldfarb ,  Stefan Harrer ,  Binquan Luan ,  Glenn J. Martyna ,  Hongbo Peng ,  Stanislav Polonsky ,  Stephen Rossnagel ,  Xiaoyan Shao ,  Gustavo A. Stolovitzky

发明人： Ali Afzali-Ardakani ,  Shafaat Ahmed ,  Hariklia Deligianni ,  Dario L. Goldfarb ,  Stefan Harrer ,  Binquan Luan ,  Glenn J. Martyna ,  Hongbo Peng ,  Stanislav Polonsky ,  Stephen Rossnagel ,  Xiaoyan Shao ,  Gustavo A. Stolovitzky

IPC分类号： H01L21/28 ,  H01L21/3205

CPC分类号： B82Y10/00 ,  H01L21/76834 ,  H01L29/0665 ,  H01L51/0093 ,  H01L51/0504 ,  H01L51/102

摘要： Accordingly, the present invention provides a method of forming an electrode having reduced corrosion and water decomposition on a surface thereof. A substrate which has a conductive layer disposed thereon is provided and the conductive layer has an oxide layer with an exposed surface. The exposed surface of the oxide layer contacts a solution of an organic surface active compound in an organic solvent to form a protective layer of the organic surface active compound over the oxide layer. The protective layer has a thickness of from about 0.5 nm to about 5 nm and ranges therebetween depending on a chemical structure of the surface active compound.

摘要翻译： 因此，本发明提供一种在其表面上形成具有降低的腐蚀和水分解的电极的方法。 提供了具有设置在其上的导电层的衬底，并且导电层具有具有暴露表面的氧化物层。 氧化物层的暴露表面接触有机表面活性化合物在有机溶剂中的溶液，以在氧化物层上形成有机表面活性化合物的保护层。 根据表面活性化合物的化学结构，保护层的厚度为约0.5nm至约5nm，并且其范围。

公开(公告)号：US20110308969A1

公开(公告)日：2011-12-22

申请号：US12820574

申请日：2010-06-22

申请人： Ali Afzali-Azdakani ,  Shafaat Ahmed ,  Hariklia Deligianni ,  Stefan Harrer ,  Binquan Luan ,  Glenn J. Martyna ,  Hongbo Peng ,  Stanislav Polonsky ,  Stephen Rossnagel ,  Xiaoyan Shao ,  Gustavo A. Stolovitzky

发明人： Ali Afzali-Azdakani ,  Shafaat Ahmed ,  Hariklia Deligianni ,  Stefan Harrer ,  Binquan Luan ,  Glenn J. Martyna ,  Hongbo Peng ,  Stanislav Polonsky ,  Stephen Rossnagel ,  Xiaoyan Shao ,  Gustavo A. Stolovitzky

IPC分类号： G01N17/04

CPC分类号： G01N17/04

摘要： The present invention provides a method of reducing corrosion and water decomposition on a surface of an electrode having a titanium nitride conductive layer disposed on a substrate and estimating extent of reduction thereof. The electrode is immersed into a solution containing a hydroxyl-functional compound. Thereafter, a voltage is applied to the titanium nitride conductive layer of the electrode. The extent of oxidation of the titanium nitride conductive layer is correlated with the extent of formation of oxide of titanium nitride and/or the extent of oxidation of the titanium nitride conductive layer is correlated with the increase of surface roughness. The extent of water decomposition is correlated with formation of hydrogen and oxygen bubbles.

摘要翻译： 本发明提供了在具有设置在基板上的具有氮化钛导电层的电极的表面上减少腐蚀和水分解的方法，并且估计其还原程度。 将电极浸入含有羟基官能化合物的溶液中。 然后，向电极的氮化钛导电层施加电压。 氮化钛导电层的氧化程度与氮化钛的氧化物的形成程度和/或氮化钛导电层的氧化程度与表面粗糙度的增加有关。 水分解的程度与氢气和氧气泡的形成有关。

公开(公告)号：US08598018B2

公开(公告)日：2013-12-03

申请号：US12820487

申请日：2010-06-22

申请人： Ali Afzali-Azdakani ,  Shafaat Ahmed ,  Hariklia Deligianni ,  Dario L. Goldfarb ,  Stefan Harrer ,  Hongbo Peng ,  Stanislav Polonsky ,  Stephen Rossnagel ,  Xiaoyan Shao ,  Gustavo A. Stolovitzky

发明人： Ali Afzali-Azdakani ,  Shafaat Ahmed ,  Hariklia Deligianni ,  Dario L. Goldfarb ,  Stefan Harrer ,  Hongbo Peng ,  Stanislav Polonsky ,  Stephen Rossnagel ,  Xiaoyan Shao ,  Gustavo A. Stolovitzky

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L21/283

CPC分类号： C23C8/02 ,  C23C8/36 ,  C23C14/5853 ,  G01N33/48721

摘要： The present invention provides a method of forming an electrode having reduced corrosion and water decomposition on a surface thereof. A conductive layer is deposited on a substrate. The conductive layer is partially oxidized by an oxygen plasma process to convert a portion thereof to an oxide layer thereby forming the electrode. The oxide layer is free of surface defects and the thickness of the oxide layer is from about 0.09 nm to about 10 nm and ranges therebetween, controllable with 0.2 nm precision.

摘要翻译： 本发明提供一种在其表面上形成具有降低的腐蚀和水分解的电极的方法。 导电层沉积在基底上。 导电层被氧等离子体工艺部分地氧化，将其一部分转化成氧化层，从而形成电极。 氧化物层没有表面缺陷，氧化物层的厚度为约0.09nm至约10nm，并且其间的范围可以0.2nm精度控制。

公开(公告)号：US20110312164A1

公开(公告)日：2011-12-22

申请号：US12820487

申请日：2010-06-22

申请人： Ali Afzali-Azdakani ,  Shafaat Ahmed ,  Hariklia Deligianni ,  Dario L. Goldfarb ,  Stefan Harrer ,  Hongbo Peng ,  Stanislav Polonsky ,  Stephen Rossnagel ,  Xiaoyan Shao ,  Gustavo A. Stolovitzky

发明人： Ali Afzali-Azdakani ,  Shafaat Ahmed ,  Hariklia Deligianni ,  Dario L. Goldfarb ,  Stefan Harrer ,  Hongbo Peng ,  Stanislav Polonsky ,  Stephen Rossnagel ,  Xiaoyan Shao ,  Gustavo A. Stolovitzky

IPC分类号： H01L21/20 ,  H01L21/36 ,  C23C14/34 ,  G03F7/20 ,  C30B23/02 ,  C30B25/02 ,  C23C28/00 ,  B05D3/06 ,  C23C14/08

CPC分类号： C23C8/02 ,  C23C8/36 ,  C23C14/5853 ,  G01N33/48721

摘要： The present invention provides a method of forming an electrode having reduced corrosion and water decomposition on a surface thereof. A conductive layer is deposited on a substrate. The conductive layer is partially oxidized by an oxygen plasma process to convert a portion thereof to an oxide layer thereby forming the electrode. The oxide layer is free of surface defects and the thickness of the oxide layer is from about 0.09 nm to about 10 nm and ranges therebetween, controllable with 0.2 nm precision.

摘要翻译： 本发明提供一种在其表面上形成具有降低的腐蚀和水分解的电极的方法。 导电层沉积在基底上。 导电层被氧等离子体工艺部分地氧化，将其一部分转化成氧化层，从而形成电极。 氧化物层没有表面缺陷，氧化物层的厚度为约0.09nm至约10nm，并且其间的范围可以0.2nm精度控制。

公开(公告)号：US20090014878A1

公开(公告)日：2009-01-15

申请号：US12130381

申请日：2008-05-30

申请人： Cyril Cabral, JR. ,  Hariklia Deligianni ,  Randolph F. Knarr ,  Sandra G. Malhotra ,  Stephen Rossnagel ,  Xiaoyan Shao ,  Anna Topol ,  Philippe M. Vereecken

发明人： Cyril Cabral, JR. ,  Hariklia Deligianni ,  Randolph F. Knarr ,  Sandra G. Malhotra ,  Stephen Rossnagel ,  Xiaoyan Shao ,  Anna Topol ,  Philippe M. Vereecken

IPC分类号： H01L23/52 ,  H01L21/4763

CPC分类号： H01L23/485 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76877 ,  H01L23/53252 ,  H01L2924/0002 ,  H01L2924/00

摘要： A contact metallurgy structure comprising a patterned dielectric layer having cavities on a substrate; a silicide or germanide layer such as of cobalt and/or nickel located at the bottom of cavities; a contact layer comprising Ti or Ti/TiN located on top of the dielectric layer and inside the cavities and making contact to the silicide or germanide layer on the bottom; a diffusion barrier layer located on top of the contact layer and inside the cavities; optionally a seed layer for plating located on top of the barrier layer; a metal fill layer in vias is provided along with a method of fabrication. The metal fill layer is electrodeposited with at least one member selected from the group consisting of copper, rhodium, ruthenium, iridium, molybdenum, gold, silver, nickel, cobalt, silver, gold, cadmium and zinc and alloys thereof. When the metal fill layer is rhodium, ruthenium, or iridium, an effective diffusion barrier layer is not required between the fill metal and the dielectric. When the barrier layer is platable, such as ruthenium, rhodium, platinum, or iridium, the seed layer is not required.

摘要翻译： 一种接触式冶金结构，包括在基底上具有空腔的图案化电介质层; 位于空腔底部的硅化物或锗化物层，例如钴和/或镍; 接触层，其包含位于介电层顶部并且在空腔内并与底部的硅化物或锗化物层接触的Ti或Ti / TiN; 位于所述接触层顶部和所述空腔内的扩散阻挡层; 可选地，位于阻挡层顶部的用于电镀的种子层; 提供通孔中的金属填充层以及制造方法。 金属填充层用选自铜，铑，钌，铱，钼，金，银，镍，钴，银，金，镉和锌中的至少一种电池和其合金电沉积。 当金属填充层是铑，钌或铱时，在填充金属和电介质之间不需要有效的扩散阻挡层。 当阻挡层是可镀的，例如钌，铑，铂或铱时，不需要种子层。

公开(公告)号：US07405154B2

公开(公告)日：2008-07-29

申请号：US11308433

申请日：2006-03-24

申请人： Cyril Cabral, Jr. ,  Hariklia Deligianni ,  Randolph F. Knarr ,  Sandra G. Malhotra ,  Stephen Rossnagel ,  Xiaoyan Shao ,  Anna Topol ,  Philippe M. Vereecken

发明人： Cyril Cabral, Jr. ,  Hariklia Deligianni ,  Randolph F. Knarr ,  Sandra G. Malhotra ,  Stephen Rossnagel ,  Xiaoyan Shao ,  Anna Topol ,  Philippe M. Vereecken

IPC分类号： H01L21/4763

CPC分类号： H01L23/485 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76877 ,  H01L23/53252 ,  H01L2924/0002 ,  H01L2924/00

摘要： A contact metallurgy structure comprising a patterned dielectric layer having cavities on a substrate; a silicide or germanide layer such as of cobalt and/or nickel located at the bottom of cavities; a contact layer comprising Ti or Ti/TiN located on top of the dielectric layer and inside the cavities and making contact to the silicide or germanide layer on the bottom; a diffusion barrier layer located on top of the contact layer and inside the cavities; optionally a seed layer for plating located on top of the barrier layer; a metal fill layer in vias is provided along with a method of fabrication. The metal fill layer is electrodeposited with at least one member selected from the group consisting of copper, rhodium, ruthenium, iridium, molybdenum, gold, silver, nickel, cobalt, silver, gold, cadmium and zinc and alloys thereof. When the metal fill layer is rhodium, ruthenium, or iridium, an effective diffusion barrier layer is not required between the fill metal and the dielectric. When the barrier layer is platable, such as ruthenium, rhodium, platinum, or iridium, the seed layer is not required.

摘要翻译： 一种接触式冶金结构，包括在基底上具有空腔的图案化电介质层; 位于空腔底部的硅化物或锗化物层，例如钴和/或镍; 接触层，其包含位于介电层顶部并且在空腔内并与底部的硅化物或锗化物层接触的Ti或Ti / TiN; 位于所述接触层顶部和所述空腔内的扩散阻挡层; 可选地，位于阻挡层顶部的用于电镀的种子层; 提供通孔中的金属填充层以及制造方法。 金属填充层用选自铜，铑，钌，铱，钼，金，银，镍，钴，银，金，镉和锌中的至少一种电池和其合金电沉积。 当金属填充层是铑，钌或铱时，在填充金属和电介质之间不需要有效的扩散阻挡层。 当阻挡层是可镀的，例如钌，铑，铂或铱时，不需要种子层。

公开(公告)号：US08089157B2

公开(公告)日：2012-01-03

申请号：US12967633

申请日：2010-12-14

申请人： Cyril Cabral, Jr. ,  Hariklia Deligianni ,  Randolph F. Knarr ,  Sandra G. Malhotra ,  Stephen Rossnagel ,  Xiaoyan Shao ,  Anna Topol ,  Philippe M. Vereecken

发明人： Cyril Cabral, Jr. ,  Hariklia Deligianni ,  Randolph F. Knarr ,  Sandra G. Malhotra ,  Stephen Rossnagel ,  Xiaoyan Shao ,  Anna Topol ,  Philippe M. Vereecken

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/485 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76877 ,  H01L23/53252 ,  H01L2924/0002 ,  H01L2924/00

摘要： A contact metallurgy structure comprising a patterned dielectric layer having vias on a substrate; a silicide layer of cobalt and/or nickel located at the bottom of vias; a contact layer comprising Ti located in vias on top of the silicide layer; a diffusion layer located in vias and on top of the contact layer; a metal fill layer in vias is provided along with a method of fabrication. The metal fill layer comprises at least one member selected from the group consisting of copper, ruthenium, rhodium platinum, palladium, iridium, rhenium, tungsten, gold, silver and osmium and alloys thereof. When the metal fill layer comprises rhodium, the diffusion layer is not required. Optionally a seed layer for the metal fill layer can be employed.

摘要翻译： 一种接触式冶金结构，包括在衬底上具有通孔的图案化介电层; 位于通孔底部的钴和/或镍的硅化物层; 包含位于硅化物层顶部的通孔中的Ti的接触层; 位于接触层的通孔和顶部的扩散层; 提供通孔中的金属填充层以及制造方法。 金属填充层包括选自铜，钌，铑铂，钯，铱，铼，钨，金，银和锇中的至少一种及其合金。 当金属填充层包含铑时，不需要扩散层。 任选地，可以使用用于金属填充层的种子层。

公开(公告)号：US20070222066A1

公开(公告)日：2007-09-27

申请号：US11308433

申请日：2006-03-24

申请人： Cyril Cabral ,  Hariklia Deligianni ,  Randolph Knarr ,  Sandra Malhotra ,  Stephen Rossnagel ,  Xiaoyan Shao ,  Anna Topol ,  Philippe Vereecken

发明人： Cyril Cabral ,  Hariklia Deligianni ,  Randolph Knarr ,  Sandra Malhotra ,  Stephen Rossnagel ,  Xiaoyan Shao ,  Anna Topol ,  Philippe Vereecken

IPC分类号： H01L23/48

CPC分类号： H01L23/485 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76877 ,  H01L23/53252 ,  H01L2924/0002 ,  H01L2924/00

摘要： A contact metallurgy structure comprising a patterned dielectric layer having cavities on a substrate; a silicide or germanide layer such as of cobalt and/or nickel located at the bottom of cavities; a contact layer comprising Ti or Ti/TiN located on top of the dielectric layer and inside the cavities and making contact to the silicide or germanide layer on the bottom; a diffusion barrier layer located on top of the contact layer and inside the cavities; optionally a seed layer for plating located on top of the barrier layer; a metal fill layer in vias is provided along with a method of fabrication. The metal fill layer is electrodeposited with at least one member selected from the group consisting of copper, rhodium, ruthenium, iridium, molybdenum, gold, silver, nickel, cobalt, silver, gold, cadmium and zinc and alloys thereof. When the metal fill layer is rhodium, ruthenium, or iridium, an effective diffusion barrier layer is not required between the fill metal and the dielectric. When the barrier layer is platable, such as ruthenium, rhodium, platinum, or iridium, the seed layer is not required.

摘要翻译： 一种接触式冶金结构，包括在基底上具有空腔的图案化电介质层; 位于空腔底部的硅化物或锗化物层，例如钴和/或镍; 接触层，其包含位于介电层顶部并且在空腔内并与底部的硅化物或锗化物层接触的Ti或Ti / TiN; 位于所述接触层顶部和所述空腔内的扩散阻挡层; 可选地，位于阻挡层顶部的用于电镀的种子层; 提供通孔中的金属填充层以及制造方法。 金属填充层用选自铜，铑，钌，铱，钼，金，银，镍，钴，银，金，镉和锌中的至少一种电池和其合金电沉积。 当金属填充层是铑，钌或铱时，在填充金属和电介质之间不需要有效的扩散阻挡层。 当阻挡层是可镀的，例如钌，铑，铂或铱时，不需要种子层。

公开(公告)号：US20110084393A1

公开(公告)日：2011-04-14

申请号：US12967633

申请日：2010-12-14

申请人： Cyril Cabral, JR. ,  Hariklia Deligianni ,  Randolph F. Knarr ,  Sandra G. Malhotra ,  Stephen Rossnagel ,  Xiaoyan Shao ,  Anna Topol ,  Philippe M. Vereecken

发明人： Cyril Cabral, JR. ,  Hariklia Deligianni ,  Randolph F. Knarr ,  Sandra G. Malhotra ,  Stephen Rossnagel ,  Xiaoyan Shao ,  Anna Topol ,  Philippe M. Vereecken

IPC分类号： H01L23/48

CPC分类号： H01L23/485 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76877 ,  H01L23/53252 ,  H01L2924/0002 ,  H01L2924/00

摘要： A contact metallurgy structure comprising a patterned dielectric layer having vias on a substrate; a silicide layer of cobalt and/or nickel located at the bottom of vias; a contact layer comprising Ti located in vias on top of the silicide layer; a diffusion layer located in vias and on top of the contact layer; a metal fill layer in vias is provided along with a method of fabrication. The metal fill layer comprises at least one member selected from the group consisting of copper, ruthenium, rhodium platinum, palladium, iridium, rhenium, tungsten, gold, silver and osmium and alloys thereof. When the metal fill layer comprises rhodium, the diffusion layer is not required. Optionally a seed layer for the metal fill layer can be employed.

摘要翻译： 一种接触式冶金结构，包括在衬底上具有通孔的图案化介电层; 位于通孔底部的钴和/或镍的硅化物层; 包含位于硅化物层顶部的通孔中的Ti的接触层; 位于所述接触层的通孔和顶部的扩散层; 提供通孔中的金属填充层以及制造方法。 金属填充层包括选自铜，钌，铑铂，钯，铱，铼，钨，金，银和锇中的至少一种以及它们的合金。 当金属填充层包含铑时，不需要扩散层。 任选地，可以使用用于金属填充层的种子层。