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公开(公告)号：US20100130107A1
公开(公告)日：2010-05-27
申请号：US12615216
申请日：2009-11-09
IPC分类号： B24B53/02
CPC分类号： B24B53/017
摘要： A method and apparatus for conditioning a polishing pad is described. The apparatus includes a base coupled to a platform, a first arm member having a first end coupled to the base, and a second arm member having a first end pivotably coupled to a second end of the first arm member and a conditioning disk coupled to a second end opposite the first end. The method includes rotating a polishing pad, urging a rotating conditioning disk against a polishing surface of the polishing pad, and moving the conditioning disk in a linear direction relative to the rotating polishing pad to perform a conditioning process.
摘要翻译： 描述了一种用于调节抛光垫的方法和装置。 该装置包括联接到平台的基座，具有联接到基座的第一端的第一臂构件和第二臂构件，第二臂构件具有可枢转地联接到第一臂构件的第二端的第一端和耦合到第一臂构件的调节盘 第二端与第一端相对。 该方法包括旋转抛光垫，将旋转的调节盘推向抛光垫的抛光表面，并相对于旋转的抛光垫沿直线方向移动调节盘以执行调节处理。
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公开(公告)号：US20130199405A1
公开(公告)日：2013-08-08
申请号：US13368477
申请日：2012-02-08
申请人： Jagan Rangarajan , Alpay Yilmaz
发明人： Jagan Rangarajan , Alpay Yilmaz
IPC分类号： B60L15/00
CPC分类号： B24B37/04 , B24B27/0023
摘要： Embodiments of the present invention relate to an apparatus and a method for transferring substrate processing equipment. One embodiment of the present invention includes a track assembly having a continuous guide rail formed from a unitary body. The track assembly also includes vertically arranged stator strips for driving motor coils of a plurality of carriages. The motor coils in the carriages may be modular including coil segments of various lengths. The coil segments and the carriages may be driven individually and jointly.
摘要翻译： 本发明的实施例涉及一种用于转移衬底处理设备的装置和方法。 本发明的一个实施例包括具有由整体形成的连续导轨的轨道组件。 轨道组件还包括用于驱动多个滑架的电动机线圈的垂直布置的定子条。 托架中的马达线圈可以是模块化的，包括各种长度的线圈段。 线圈段和托架可以单独和共同地驱动。
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公开(公告)号：US20120322345A1
公开(公告)日：2012-12-20
申请号：US13163227
申请日：2011-06-17
申请人： Jagan Rangarajan , Alpay Yilmaz
发明人： Jagan Rangarajan , Alpay Yilmaz
IPC分类号： B24B1/00
CPC分类号： B24B37/04
摘要： Embodiments of the invention generally relate to systems and methods to CMP substrates. The systems generally include a polishing system that has a polishing module and cleaning module. Each of the polishing module and the cleaning module can be partitioned into independently operable sections. Each section of the polishing module includes a platen, at least one load cup, and at least one polishing head. Each section of the cleaning module includes a cleaning station and one or more robots adapted to advance substrates through the cleaning station. The methods generally include polishing a plurality of substrates in a polishing system having independently operable sections. During the polishing of the substrates in one section, a second of the independently operable stations may be maintained or cleaned.
摘要翻译： 本发明的实施例一般涉及CMP衬底的系统和方法。 该系统通常包括具有抛光模块和清洁模块的抛光系统。 抛光模块和清洁模块中的每一个可以被划分成可独立操作的部分。 抛光模块的每个部分包括压板，至少一个负载杯和至少一个抛光头。 清洁模块的每个部分包括清洁站和一个或多个机器人，其适于使基板通过清洁站。 所述方法通常包括在具有可独立操作的部分的抛光系统中抛光多个基板。 在一个部分中抛光衬底期间，可以维持或清洁可独立操作的第二个工位。
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公开(公告)号：US20130115862A1
公开(公告)日：2013-05-09
申请号：US13293088
申请日：2011-11-09
申请人： JAGAN RANGARAJAN , Alpay Yilmaz
发明人： JAGAN RANGARAJAN , Alpay Yilmaz
IPC分类号： B24B25/00
CPC分类号： B24B27/0023 , B24B27/0069 , B24B37/345 , B24B41/02
摘要： Embodiments of the invention provide polishing systems for increasing production efficiency, maximizing substrate throughput, and reducing production costs. The polishing systems generally include one or more polishing stations for performing a CMP process and one or more cleaning stations at which post-polishing cleaning is performed. The number of cleaning stations and polishing heads present may be increased depending on the desired substrate throughput or processing time at each polishing station. The number of polishing stations or cleaning stations can also be reduced in order to reduce the footprint of the polishing system. The polishing pads at each polishing station can be adjusted in size to accommodate one or more polishing heads simultaneously depending on substrate throughput and system footprint. Additionally, the polishing pads may be replaced with a fixed abrasive pad, or adapted to polish 450 millimeter substrates.
摘要翻译： 本发明的实施例提供了用于提高生产效率，最大化基板产量并降低生产成本的抛光系统。 抛光系统通常包括用于执行CMP处理的一个或多个抛光站和执行抛光后清洁的一个或多个清洁站。 存在的清洁站和抛光头的数量可以根据所需的基板生产量或每个抛光站的处理时间而增加。 还可以减少抛光站或清洁站的数量，以减少抛光系统的占地面积。 每个抛光站的抛光垫可以根据基板产量和系统占地面积同时调节尺寸以适应一个或多个抛光头。 此外，抛光垫可以用固定的研磨垫替代，或适于抛光450毫米的基底。
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公开(公告)号：US20090258574A1
公开(公告)日：2009-10-15
申请号：US12420996
申请日：2009-04-09
CPC分类号： B24B37/04 , B24B41/047 , B24B45/003
摘要： Embodiments described herein relate to a track system in a polishing system. One embodiment described herein provides a track system configured to transfer polishing heads in a polishing system. The track system comprises a supporting frame, a track coupled to the supporting frame and defining a path along which the polishing heads are configured to move, and one or more carriages configured to carry at least one polishing head along the path defined by the track, wherein the one or more carriages are coupled to the track and independently movable along the track.
摘要翻译： 本文所述的实施例涉及抛光系统中的轨道系统。 本文所述的一个实施例提供了一种配置成在抛光系统中传送抛光头的轨道系统。 轨道系统包括支撑框架，轨道，其联接到支撑框架并且限定抛光头被配置为移动的路径，以及一个或多个托架，其构造成沿着由轨道限定的路径承载至少一个抛光头， 其中所述一个或多个托架联接到所述轨道并且可以沿着所述轨道独立地移动。
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公开(公告)号：US20140020830A1
公开(公告)日：2014-01-23
申请号：US13553009
申请日：2012-07-19
申请人： Jagan Rangarajan , Alpay Yilmaz
发明人： Jagan Rangarajan , Alpay Yilmaz
IPC分类号： B24B29/00
CPC分类号： B24B37/013 , B24B37/105 , B24B49/10
摘要： A chemical mechanical polishing system includes a platen to support a polishing pad, two carrier heads configured to hold two substrates against the polishing pad at the same time, two actuators to sweep the two carrier heads laterally across the polishing pad, an in-situ polishing monitoring system including a two current sensors to sense two currents supplied to the two actuators and generate two signals, and a controller to receive the two signals and independently detect a two endpoints for the two substrates based on the two signals.
摘要翻译： 化学机械抛光系统包括用于支撑抛光垫的压板，配置成将两个基板同时固定在抛光垫上的两个载体头，两个致动器横向扫掠抛光垫横向扫描两个载体头，原位抛光 监测系统包括两个电流传感器以感测提供给两个致动器的两个电流并产生两个信号，以及控制器，用于接收两个信号，并且基于两个信号独立地检测两个基板的两个端点。
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公开(公告)号：US08172643B2
公开(公告)日：2012-05-08
申请号：US12420996
申请日：2009-04-09
CPC分类号： B24B37/04 , B24B41/047 , B24B45/003
摘要： Embodiments described herein relate to a track system in a polishing system. One embodiment described herein provides a track system configured to transfer polishing heads in a polishing system. The track system comprises a supporting frame, a track coupled to the supporting frame and defining a path along which the polishing heads are configured to move, and one or more carriages configured to carry at least one polishing head along the path defined by the track, wherein the one or more carriages are coupled to the track and independently movable along the track.
摘要翻译： 本文所述的实施例涉及抛光系统中的轨道系统。 本文所述的一个实施例提供了一种配置成在抛光系统中传送抛光头的轨道系统。 轨道系统包括支撑框架，轨道，其联接到支撑框架并且限定抛光头被配置为移动的路径，以及一个或多个托架，其构造成沿着由轨道限定的路径承载至少一个抛光头， 其中所述一个或多个托架联接到所述轨道并且可以沿着所述轨道独立地移动。
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8.发明申请公开(公告)号：US20100048106A1
公开(公告)日：2010-02-25
申请号：US12196860
申请日：2008-08-22
申请人： YULIN WANG , Alpay Yilmaz
发明人： YULIN WANG , Alpay Yilmaz
CPC分类号： B24B57/02 , B24B37/04 , B24B37/042
摘要： A chemical mechanical polisher comprises a polishing platen capable of supporting a polishing pad, and first and second substrate carriers that are each capable of holding a substrate against the polishing pad. First and second slurry dispensers, each comprise (i) an arm comprising a pivoting end and a distal end, (ii) at least one slurry dispensing nozzle on the distal end, and (iii) a dispenser drive capable of rotating the arm about the pivoting end to swing the slurry dispensing nozzle at the distal end to dispense slurry across the polishing platen.
摘要翻译： 化学机械抛光机包括能够支撑抛光垫的研磨台板，以及能够将基板保持在抛光垫上的第一和第二基板载体。 第一和第二浆液分配器，每个包括（i）包括枢转端和远端的臂，（ii）在远端上的至少一个浆料分配喷嘴，以及（iii）能够围绕 枢转端以使浆料分配喷嘴在远端摆动，以将浆料分配到抛光台板上。
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公开(公告)号：US07611400B2
公开(公告)日：2009-11-03
申请号：US11741609
申请日：2007-04-27
申请人： Alpay Yilmaz , Lakshmanan Karuppiah
发明人： Alpay Yilmaz , Lakshmanan Karuppiah
IPC分类号： B24B53/00
CPC分类号： B24B53/017 , H01L21/67051 , H01L21/67092 , H01L21/67253
摘要： A method and apparatus for monitoring polishing pad conditioning mechanisms is provided. In one embodiment, a semiconductor substrate polishing system includes a rinse station, a polishing surface, a conditioning element, and a conditioning mechanism. The conditioning mechanism selectively positions the conditioning element over the polishing surface and over the rinse station. At least one sensor is provided and is configured to detect a first position and a second position of the conditioning element when disposed over the rinse station.
摘要翻译： 提供了一种用于监测抛光垫调节机构的方法和装置。 在一个实施例中，半导体衬底抛光系统包括冲洗台，抛光表面，调节元件和调节机构。 调理机构选择性地将调理元件定位在抛光表面上和漂洗台上。 提供至少一个传感器，并且被配置为当设置在漂洗站上时检测调理元件的第一位置和第二位置。
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10.发明申请Process for high copper removal rate with good planarization and surface finish 审中-公开具有良好的平坦化和表面光洁度的高铜去除率的工艺公开(公告)号：US20070235344A1
公开(公告)日：2007-10-11
申请号：US11399560
申请日：2006-04-06
申请人： Renhe Jia , You Wang , Gerald Alonzo , Yongqi Hu , Zhihong Wang , Jie Diao , Stan D Tsai , Alpay Yilmaz , Lakshmanan Karuppiah , Liang-Yuh Chen
发明人： Renhe Jia , You Wang , Gerald Alonzo , Yongqi Hu , Zhihong Wang , Jie Diao , Stan D Tsai , Alpay Yilmaz , Lakshmanan Karuppiah , Liang-Yuh Chen
IPC分类号： B23H5/08
CPC分类号： B23H5/08 , C25F3/02 , H01L21/32125
摘要： A method for electrochemical mechanical polishing (ECMP) is disclosed. The polishing rate and surface finish of the layer on the wafer are improved by controlling the surface speed of both the platen and head, controlling the current applied to the pad, and preselecting the density of the perforations on the fully conductive polishing pad. ECMP produces much higher removal rates, good surface finishes, and good planarization efficiency at a lower down force. Generally, increasing the surface speed of both the platen and the head will increase the surface smoothness. Also, increasing the current density on the wafer will increase the surface smoothness. There is virtually no difference in the smoothness of the wafer surface between the center, middle, and edge of the wafer. For copper, removal rates of 10,000 Å/min and greater can be achieved.
摘要翻译： 公开了一种用于电化学机械抛光（ECMP）的方法。 通过控制压板和头部的表面速度，控制施加到垫的电流以及预选在全导电抛光垫上的穿孔密度来提高晶片上层的抛光速率和表面光洁度。 ECMP在较低的下压力下产生高得多的去除率，良好的表面光洁度和良好的平面化效率。 通常，增加压板和头部的表面速度将增加表面平滑度。 此外，增加晶片上的电流密度将增加表面平滑度。 在晶片的中心，中间和边缘之间的晶片表面的平滑度几乎没有差别。 对于铜，可以实现10,000 / min以上的去除率。
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