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17 条记录 (耗时 0.028 秒)

    Deep submicron and nano CMOS single photon photodetector pixel with event based circuits for readout data-rate reduction communication system
    2.
    发明授权
    Deep submicron and nano CMOS single photon photodetector pixel with event based circuits for readout data-rate reduction communication system 有权
    深亚微米和纳米CMOS单光子光电检测器像素，具有用于读出数据速率降低通信系统的基于事件的电路

    公开(公告)号：US08259293B2

    公开(公告)日：2012-09-04

    申请号：US12531191

    申请日：2008-03-17

    申请人： Andreas G. Andreou ,  Miriam Adlerstein Marwick ,  Philippe O. Pouliquen

    发明人： Andreas G. Andreou ,  Miriam Adlerstein Marwick ,  Philippe O. Pouliquen

    IPC分类号： G01J1/42

    CPC分类号： H01L27/14603 ,  H01L31/107

    摘要： An avalanche photodiode is disclosed. The avalanche photodiode includes a substrate of a first conductivity type. A first well of a second conductivity type is formed within the substrate. A second well of the second conductivity type is formed substantially overlying and extending into the first well. A heavily doped region of the first conductivity type is formed substantially overlying and extending into the first well, the junction between the heavily doped region and the second well forming an avalanche multiplication region. A guard ring is formed from a first conductivity material positioned substantially about the periphery of the multiplication region at least partially underlying the heavily doped region. An outer well ring of the second conductivity type is formed about the perimeter of the deep well and the guard ring.

    摘要翻译： 公开了一种雪崩光电二极管。 雪崩光电二极管包括第一导电类型的衬底。 在衬底内形成第二导电类型的第一阱。 第二导电类型的第二阱基本上覆盖并延伸到第一阱中。 第一导电类型的重掺杂区基本上覆盖并延伸到第一阱中，重掺杂区和第二阱之间的结形成雪崩倍增区。 保护环由第一导电材料形成，该第一导电材料基本上位于至少部分地位于重掺杂区域下方的乘法区域的周边。 围绕深井和保护环的周边形成第二导电类型的外井环。

    DEEP SUBMICRON AND NANO CMOS SINGLE PHOTON PHOTODETECTOR PIXEL WITH EVENT BASED CIRCUITS FOR READOUT DATA-RATE REDUCTION COMMUNICATION SYSTEM
    3.
    发明申请
    DEEP SUBMICRON AND NANO CMOS SINGLE PHOTON PHOTODETECTOR PIXEL WITH EVENT BASED CIRCUITS FOR READOUT DATA-RATE REDUCTION COMMUNICATION SYSTEM 有权
    DEEP SUBMICRON和NANO CMOS单根光电子像素与基于事件的电路，用于读取数据速率减少通信系统

    公开(公告)号：US20100245809A1

    公开(公告)日：2010-09-30

    申请号：US12531191

    申请日：2008-03-17

    申请人： Andreas G. Andreou ,  Miriam Adlerstein Marwick ,  Philippe O. Pouliquen

    发明人： Andreas G. Andreou ,  Miriam Adlerstein Marwick ,  Philippe O. Pouliquen

    IPC分类号： H01L27/144 ,  H01L31/107 ,  G01J1/44

    CPC分类号： H01L27/14603 ,  H01L31/107

    摘要： An avalanche photodiode and a sensor array comprising an array of said avalanche photodiodes is disclosed. Then avalanche photodiode comprises a substrate of a first conductivity type; a first well of a second conductivity type formed within the substrate; a second well of the second conductivity type formed substantially overlying and extending into the first well; a heavily doped region of the first conductivity type formed substantially overlying and extending into the first well, the junction between the heavily doped region and the second well forming an avalanche multiplication region; a guard ring formed from a first conductivity material positioned substantially about the periphery of the multiplication region at least partially underlying the heavily doped region; and an outer well ring of the second conductivity type formed about the perimeter of the deep well and the guard ring. The sensor array comprises a plurality of pixel elements, each of the pixel elements being configured to operate on discrete value continuous time (DVCT) basis. Each of the pixel elements can include the avalanche photodiode previously described.

    摘要翻译： 公开了一种雪崩光电二极管和包括所述雪崩光电二极管阵列的传感器阵列。 然后雪崩光电二极管包括第一导电类型的衬底; 在衬底内形成的第二导电类型的第一阱; 第二导电类型的第二阱基本上覆盖并延伸到第一阱中; 第一导电类型的重掺杂区域基本上覆盖并延伸到第一阱中，重掺杂区域和形成雪崩倍增区域的第二阱之间的结; 由第一导电材料形成的保护环，该第一导电材料基本上围绕至少部分地位于重掺杂区域下方的倍增区域的周边; 以及围绕深井和保护环的周边形成的第二导电类型的外阱环。 传感器阵列包括多个像素元件，每个像素元件被配置为基于离散值连续时间（DVCT）进行操作。 每个像素元件可以包括先前描述的雪崩光电二极管。

    Current-mode based analog circuits for synthetic neural systems
    5.
    发明授权
    Current-mode based analog circuits for synthetic neural systems 失效
    用于合成神经系统的电流模式模拟电路

    公开(公告)号：US5206541A

    公开(公告)日：1993-04-27

    申请号：US693310

    申请日：1991-04-30

    申请人： Kwabena A. Boahen ,  Andreas G. Andreou ,  Philippe O. Pouliquen ,  Robert E. Jenkins

    发明人： Kwabena A. Boahen ,  Andreas G. Andreou ,  Philippe O. Pouliquen ,  Robert E. Jenkins

    IPC分类号： G06N3/063

    CPC分类号： G06N3/0635

    摘要： A two transistor current-controlled current conveyor (C4) circuit is provided which exploits the translinear properties of the MOS transistor in subthreshold and uses unidirectional current signals. As a result, the circuits of the invention achieve high functionality and integration density with very low power dissipation. Two C4 circuits connected to and communicating through a bidirectional junction circuit of the invention permit the transmission of independent, bidirectional signals. These circuits are useful for implementing synthetic neural systems such as associative memories and silicon retinas, such as winner-takes-all and pyramidal neuron circuits and the outer-plexiform layer of a retina.

    摘要翻译： 提供了两个晶体管电流控制电流输送机（C4）电路，其利用亚阈值下的MOS晶体管的跨导特性，并使用单向电流信号。 结果，本发明的电路以非常低的功耗实现了高功能性和集成密度。 通过本发明的双向结电路连接和通信的两个C4电路允许传输独立的双向信号。 这些电路对于实现诸如关联记忆和硅视网膜之类的合成神经系统是有用的，例如获胜者全部和锥体神经元电路以及视网膜的外丛状层。

    Gas cell semiconductor chip assembly
    8.
    发明授权
    Gas cell semiconductor chip assembly 有权
    气体电池半导体芯片组装

    公开(公告)号：US09274186B2

    公开(公告)日：2016-03-01

    申请号：US13933385

    申请日：2013-07-02

    申请人： The Johns Hopkins University

    发明人： Haje Korth ,  Kim Strohbehn ,  Andreas G. Andreou ,  Francisco Tejada

    IPC分类号： G01V3/00 ,  G01R33/26

    CPC分类号： G01R33/26

    摘要： A gas cell semiconductor chip assembly includes a gas cell including an alkali gas stored therein and a first semiconductor chip including a first resistive heating loop at a location corresponding to the gas cell to heat the gas cell and a second resistive heating loop around an outer perimeter of the first resistive heating loop. The second resistive heating loop is configured to cancel a magnetic field of the first resistive heating loop based on a current flowing through the first and second resistive heating loops.

    摘要翻译： 一种气体电池半导体芯片组件包括：气体池，其包含存储在其中的碱性气体;以及第一半导体芯片，该第一半导体芯片包括在与气体电池对应的位置处的第一电阻加热回路，以加热气体单元;以及第二电阻加热回路， 的第一个电阻加热回路。 第二电阻加热回路被配置为基于流过第一和第二电阻加热回路的电流来消除第一电阻加热回路的磁场。

    FLEXIBLE READOUT AND SIGNAL PROCESSING IN A COMPUTATIONAL SENSOR ARRAY
    9.
    发明申请
    FLEXIBLE READOUT AND SIGNAL PROCESSING IN A COMPUTATIONAL SENSOR ARRAY 审中-公开
    计算机传感器阵列中的灵活读取和信号处理

    公开(公告)号：US20160050382A1

    公开(公告)日：2016-02-18

    申请号：US14923784

    申请日：2015-10-27

    申请人： The Johns Hopkins University

    发明人： Charbel G. Rizk ,  Philippe O. Pouliquen ,  Andreas G. Andreou ,  Joseph H. Lin

    IPC分类号： H04N5/378 ,  H04N5/357

    CPC分类号： H04N5/378 ,  G01J1/44 ,  H04N5/357 ,  H04N5/3651 ,  H04N5/369 ,  H04N5/374 ,  H04N5/37455

    摘要： A computational sensing array includes an array of sensing elements. In each sensing element, a first signal is generated from a transducer. A second signal is produced by a collection unit in response to receiving the first signal. The second signal may be modified, in a conditioning unit. A sensing element preprocessing unit generates a word representing the value of the modified second signal, and may produce an indication of change of the first signal. A current value of the word may be stored in a state holding element local to the sensing element, and a previous value of the word may be retained in a further state holding element local to the sensing element.

    摘要翻译： 计算感测阵列包括一组感测元件。 在每个感测元件中，从换能器产生第一信号。 响应于接收到第一信号，收集单元产生第二信号。 可以在调节单元中修改第二信号。 感测元件预处理单元生成表示修改的第二信号的值的字，并且可以产生第一信号的变化的指示。 字的当前值可以存储在感测元件的局部的状态保持元件中，并且字的先前值可以被保持在感测元件的局部的另外的状态保持元件中。