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1.发明授权公开(公告)号：US09202978B2
公开(公告)日：2015-12-01
申请号：US14114044
申请日：2012-04-26
CPC分类号： H01L33/26 , H01L33/025 , H01L33/14 , H01L33/24 , H01L33/32
摘要： A radiation-emitting semiconductor chip having a semiconductor layer sequence based on a nitride compound semiconductor material and having a pn junction includes a first protective layer having deliberately introduced crystal defects, a second protective layer having a higher doping than the first protective layer, wherein the first protective layer protects the semiconductor chip against electrostatic discharge pulses, an active zone that generates radiation disposed downstream of the first protective layer in a growth direction, wherein during operation of the semiconductor chip, a breakdown behavior of the semiconductor layer sequence in a reverse direction in regions having crystal defects differs from regions without crystal defects, and wherein in the event of electrostatic discharge pulses, electrical charge is dissipated in a homogeneously distributed manner via the regions having crystal defects.
摘要翻译： 具有基于氮化物半导体材料并具有pn结的半导体层序列的辐射发射半导体芯片包括具有有意引入的晶体缺陷的第一保护层，具有比第一保护层更高掺杂的第二保护层，其中， 第一保护层保护半导体芯片免受静电放电脉冲的影响，所述有源区域沿生长方向产生设置在第一保护层下游的辐射，其中在半导体芯片的操作期间半导体层序列沿相反方向的击穿行为 具有晶体缺陷的区域与没有晶体缺陷的区域不同，并且其中在静电放电脉冲的情况下，通过具有晶体缺陷的区域以均匀分布的方式散发电荷。
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2.发明申请公开(公告)号：US20140183594A1
公开(公告)日：2014-07-03
申请号：US14114044
申请日：2012-04-26
IPC分类号： H01L33/26
CPC分类号： H01L33/26 , H01L33/025 , H01L33/14 , H01L33/24 , H01L33/32
摘要： A radiation-emitting semiconductor chip having a semiconductor layer sequence based on a nitride compound semiconductor material and having a pn junction includes a first protective layer having deliberately introduced crystal defects, a second protective layer having a higher doping than the first protective layer, wherein the first protective layer protects the semiconductor chip against electrostatic discharge pulses, an active zone that generates radiation disposed downstream of the first protective layer in a growth direction, wherein during operation of the semiconductor chip, a breakdown behavior of the semiconductor layer sequence in a reverse direction in regions having crystal defects differs from regions without crystal defects, and wherein in the event of electrostatic discharge pulses, electrical charge is dissipated in a homogeneously distributed manner via the regions having crystal defects.
摘要翻译： 具有基于氮化物半导体材料并具有pn结的半导体层序列的辐射发射半导体芯片包括具有有意引入的晶体缺陷的第一保护层，具有比第一保护层更高掺杂的第二保护层，其中， 第一保护层保护半导体芯片免受静电放电脉冲的影响，所述有源区域沿生长方向产生设置在第一保护层下游的辐射，其中在半导体芯片的操作期间半导体层序列沿相反方向的击穿行为 具有晶体缺陷的区域与没有晶体缺陷的区域不同，并且其中在静电放电脉冲的情况下，通过具有晶体缺陷的区域以均匀分布的方式散发电荷。
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3.发明授权Method for producing a thin-film semiconductor body and thin-film semiconductor body 有权薄膜半导体体和薄膜半导体体的制造方法公开(公告)号：US09202967B2
公开(公告)日：2015-12-01
申请号：US14002487
申请日：2012-02-28
CPC分类号： H01L33/20 , H01L21/0237 , H01L21/02458 , H01L21/02494 , H01L21/02502 , H01L21/0254 , H01L21/02664 , H01L33/007 , H01L33/0075 , H01L33/22 , H01L2933/0091
摘要： A method for producing a thin-film semiconductor body is provided. A growth substrate is provided. A semiconductor layer with funnel-shaped and/or inverted pyramid-shaped recesses is epitaxially grown onto the growth substrate. The recesses are filled with a semiconductor material in such a way that pyramid-shaped outcoupling structures arise. A semiconductor layer sequence with an active layer is applied on the outcoupled structures. The active layer is suitable for generating electromagnetic radiation. A carrier is applied onto the semiconductor layer sequence. At least the semiconductor layer with the funnel-shaped and/or inverted pyramid-shaped recesses is detached, such that the pyramid-shaped outcoupling structures are configured as projections on a radiation exit face of the thin-film semiconductor body.
摘要翻译： 提供一种制造薄膜半导体体的方法。 提供生长衬底。 在生长衬底上外延生长具有漏斗形和/或倒置金字塔形凹陷的半导体层。 这些凹部以半导体材料填充，使得出现棱锥形的外耦合结构。 具有有源层的半导体层序列被应用于外耦合结构。 有源层适用于产生电磁辐射。 将载体施加到半导体层序列上。 至少具有漏斗形和/或倒置的金字塔状凹部的半导体层被分离，使得金字塔形外耦合结构被配置为在薄膜半导体本体的辐射出射面上的突起。
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公开(公告)号：US20140057417A1
公开(公告)日：2014-02-27
申请号：US14002968
申请日：2012-02-15
申请人： Christian Leirer , Anton Vogl , Andreas Biebersdorf , Joachim Hertkorn , Tetsuya Taki , Rainer Butendeich
发明人： Christian Leirer , Anton Vogl , Andreas Biebersdorf , Joachim Hertkorn , Tetsuya Taki , Rainer Butendeich
CPC分类号： H01L21/02513 , H01L21/02458 , H01L21/02494 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L31/03044 , H01L31/03529 , H01L31/1856 , H01L33/007 , H01L33/0075 , H01L33/22 , H01L33/24
摘要： A method for producing an optoelectronic semiconductor chip is disclosed. A growth substrate is provided in an epitaxy installation. At least one intermediate layer is deposited by epitaxy on the growth substrate. A structured surface that faces away from the growth substrate is produced on the side of the intermediate layer facing away from the growth substrate. An active layer is deposited by epitaxy on the structured surface. The structured surface is produced in the epitaxy installation and the active layer follows the structuring of the structured surface at least in some regions in a conformal manner or at least in some sections essentially in a conformal manner.
摘要翻译： 公开了一种制造光电半导体芯片的方法。 在外延装置中提供生长衬底。 通过在生长衬底上的外延沉积至少一个中间层。 在远离生长衬底的中间层的侧面上产生面向生长衬底的结构化表面。 活性层通过外延沉积在结构化表面上。 结构化表面在外延装置中产生，并且活性层至少在一些区域中以保形方式或至少在某些部分基本上以共形方式结构化结构化表面。
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5.发明申请Method for Producing a Thin-Film Semiconductor Body and Thin-Film Semiconductor Body 有权制造薄膜半导体体和薄膜半导体体的方法公开(公告)号：US20140061694A1
公开(公告)日：2014-03-06
申请号：US14002487
申请日：2012-02-28
CPC分类号： H01L33/20 , H01L21/0237 , H01L21/02458 , H01L21/02494 , H01L21/02502 , H01L21/0254 , H01L21/02664 , H01L33/007 , H01L33/0075 , H01L33/22 , H01L2933/0091
摘要： A method for producing a thin-film semiconductor body is provided. A growth substrate is provided. A semiconductor layer with funnel-shaped and/or inverted pyramid-shaped recesses is epitaxially grown onto the growth substrate. The recesses are filled with a semiconductor material in such a way that pyramid-shaped outcoupling structures arise. A semiconductor layer sequence with an active layer is applied on the outcoupled structures. The active layer is suitable for generating electromagnetic radiation. A carrier is applied onto the semiconductor layer sequence. At least the semiconductor layer with the funnel-shaped and/or inverted pyramid-shaped recesses is detached, such that the pyramid-shaped outcoupling structures are configured as projections on a radiation exit face of the thin-film semiconductor body.
摘要翻译： 提供一种制造薄膜半导体体的方法。 提供生长衬底。 在生长衬底上外延生长具有漏斗形和/或倒置金字塔形凹陷的半导体层。 这些凹部以半导体材料填充，使得出现棱锥形的外耦合结构。 具有有源层的半导体层序列被应用于外耦合结构。 有源层适用于产生电磁辐射。 将载体施加到半导体层序列上。 至少具有漏斗形和/或倒置的金字塔状凹部的半导体层被分离，使得金字塔形外耦合结构被配置为在薄膜半导体本体的辐射出射面上的突起。
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