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    Radiation-emitting semiconductor chip having integrated ESD protection
    1.
    发明授权
    Radiation-emitting semiconductor chip having integrated ESD protection 有权
    具有集成ESD保护功能的辐射发射半导体芯片

    公开(公告)号：US09202978B2

    公开(公告)日：2015-12-01

    申请号：US14114044

    申请日：2012-04-26

    申请人： Andreas Löffler ,  Christian Leirer ,  Rainer Butendeich ,  Tobias Meyer ,  Matthias Peter

    发明人： Andreas Löffler ,  Christian Leirer ,  Rainer Butendeich ,  Tobias Meyer ,  Matthias Peter

    IPC分类号： H01L29/24 ,  H01L33/26 ,  H01L33/02 ,  H01L33/14 ,  H01L33/24 ,  H01L33/32

    CPC分类号： H01L33/26 ,  H01L33/025 ,  H01L33/14 ,  H01L33/24 ,  H01L33/32

    摘要： A radiation-emitting semiconductor chip having a semiconductor layer sequence based on a nitride compound semiconductor material and having a pn junction includes a first protective layer having deliberately introduced crystal defects, a second protective layer having a higher doping than the first protective layer, wherein the first protective layer protects the semiconductor chip against electrostatic discharge pulses, an active zone that generates radiation disposed downstream of the first protective layer in a growth direction, wherein during operation of the semiconductor chip, a breakdown behavior of the semiconductor layer sequence in a reverse direction in regions having crystal defects differs from regions without crystal defects, and wherein in the event of electrostatic discharge pulses, electrical charge is dissipated in a homogeneously distributed manner via the regions having crystal defects.

    摘要翻译： 具有基于氮化物半导体材料并具有pn结的半导体层序列的辐射发射半导体芯片包括具有有意引入的晶体缺陷的第一保护层，具有比第一保护层更高掺杂的第二保护层，其中， 第一保护层保护半导体芯片免受静电放电脉冲的影响，所述有源区域沿生长方向产生设置在第一保护层下游的辐射，其中在半导体芯片的操作期间半导体层序列沿相反方向的击穿行为 具有晶体缺陷的区域与没有晶体缺陷的区域不同，并且其中在静电放电脉冲的情况下，通过具有晶体缺陷的区域以均匀分布的方式散发电荷。

    RADIATION-EMITTING SEMICONDUCTOR CHIP HAVING INTEGRATED ESD PROTECTION
    2.
    发明申请
    RADIATION-EMITTING SEMICONDUCTOR CHIP HAVING INTEGRATED ESD PROTECTION 有权
    具有集成ESD保护功能的辐射发射半导体芯片

    公开(公告)号：US20140183594A1

    公开(公告)日：2014-07-03

    申请号：US14114044

    申请日：2012-04-26

    申请人： Andreas Löffler ,  Christian Leirer ,  Rainer Butendeich ,  Tobias Meyer ,  Matthias Peter

    发明人： Andreas Löffler ,  Christian Leirer ,  Rainer Butendeich ,  Tobias Meyer ,  Matthias Peter

    IPC分类号： H01L33/26

    CPC分类号： H01L33/26 ,  H01L33/025 ,  H01L33/14 ,  H01L33/24 ,  H01L33/32

    摘要： A radiation-emitting semiconductor chip having a semiconductor layer sequence based on a nitride compound semiconductor material and having a pn junction includes a first protective layer having deliberately introduced crystal defects, a second protective layer having a higher doping than the first protective layer, wherein the first protective layer protects the semiconductor chip against electrostatic discharge pulses, an active zone that generates radiation disposed downstream of the first protective layer in a growth direction, wherein during operation of the semiconductor chip, a breakdown behavior of the semiconductor layer sequence in a reverse direction in regions having crystal defects differs from regions without crystal defects, and wherein in the event of electrostatic discharge pulses, electrical charge is dissipated in a homogeneously distributed manner via the regions having crystal defects.

    摘要翻译： 具有基于氮化物半导体材料并具有pn结的半导体层序列的辐射发射半导体芯片包括具有有意引入的晶体缺陷的第一保护层，具有比第一保护层更高掺杂的第二保护层，其中， 第一保护层保护半导体芯片免受静电放电脉冲的影响，所述有源区域沿生长方向产生设置在第一保护层下游的辐射，其中在半导体芯片的操作期间半导体层序列沿相反方向的击穿行为 具有晶体缺陷的区域与没有晶体缺陷的区域不同，并且其中在静电放电脉冲的情况下，通过具有晶体缺陷的区域以均匀分布的方式散发电荷。

    Optoelectronic Semiconductor Body with a Quantum Well Structure
    5.
    发明申请
    Optoelectronic Semiconductor Body with a Quantum Well Structure 审中-公开
    具有量子阱结构的光电子体

    公开(公告)号：US20120298951A1

    公开(公告)日：2012-11-29

    申请号：US13386861

    申请日：2010-07-22

    申请人： Tobias Meyer ,  Matthias Peter ,  Rainer Butendeich ,  Tetsuya Taki ,  Juergen Off ,  Alexander Walter

    发明人： Tobias Meyer ,  Matthias Peter ,  Rainer Butendeich ,  Tetsuya Taki ,  Juergen Off ,  Alexander Walter

    IPC分类号： H01L33/04

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/32 ,  H01S5/305 ,  H01S5/3063 ,  H01S5/3213 ,  H01S5/3215 ,  H01S5/34 ,  H01S5/347

    摘要： An optoelectronic semiconductor body is provided, which contains a semiconductor material which is composed of a first component and a second component different from the first component. The semiconductor body comprises a quantum well structure, which is arranged between an n-conducting layer (1) and a p-conducting layer (5). The quantum well structure consists of following elements: one single quantum well layer 31 or a layer stack (3), which consists of a plurality of quantum well layers (31) and at least one barrier layer (32), one barrier layer (32) being arranged between each pair of successive quantum wall layers (31), which barrier layer adjoins both quantum wall layers (31); an n-side terminating layer (2), which adjoins the n-conducting layer (1) and the single quantum well layer (31) or the layer stack (3); and a p-side terminating layer (4), which is arranged between the p-conducting layer (5) and the single quantum well layer (31) or the layer stack (3) and adjoins the layer stack (3) or the single quantum well layer (31).

    摘要翻译： 提供了一种光电半导体体，其包含由第一组分和与第一组分不同的第二组分组成的半导体材料。 半导体本体包括量子阱结构，其布置在n导电层（1）和p导电层（5）之间。 量子阱结构由以下元件组成：由多个量子阱层（31）和至少一个阻挡层（32），一个势垒层（32）和一个势垒层（32）构成的单个量子阱层31或层堆叠 ）布置在每对连续的量子壁层（31）之间，该阻挡层邻接量子壁层（31）; 邻接n导电层（1）和单量子阱层（31）或层叠体（3）的n侧端接层（2）; 和p侧端接层（4），其布置在导电层（5）和单量子阱层（31）或层堆叠（3）之间并且邻接层堆叠（3）或单层 量子阱层（31）。

    Method for Producing a Thin-Film Semiconductor Body and Thin-Film Semiconductor Body
    10.
    发明申请
    Method for Producing a Thin-Film Semiconductor Body and Thin-Film Semiconductor Body 有权
    制造薄膜半导体体和薄膜半导体体的方法

    公开(公告)号：US20140061694A1

    公开(公告)日：2014-03-06

    申请号：US14002487

    申请日：2012-02-28

    申请人： Christian Leirer ,  Anton Vogl ,  Andreas Biebersdorf ,  Rainer Butendeich ,  Christian Rumbolz

    发明人： Christian Leirer ,  Anton Vogl ,  Andreas Biebersdorf ,  Rainer Butendeich ,  Christian Rumbolz

    IPC分类号： H01L33/00 ,  H01L33/22

    CPC分类号： H01L33/20 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02664 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/22 ,  H01L2933/0091

    摘要： A method for producing a thin-film semiconductor body is provided. A growth substrate is provided. A semiconductor layer with funnel-shaped and/or inverted pyramid-shaped recesses is epitaxially grown onto the growth substrate. The recesses are filled with a semiconductor material in such a way that pyramid-shaped outcoupling structures arise. A semiconductor layer sequence with an active layer is applied on the outcoupled structures. The active layer is suitable for generating electromagnetic radiation. A carrier is applied onto the semiconductor layer sequence. At least the semiconductor layer with the funnel-shaped and/or inverted pyramid-shaped recesses is detached, such that the pyramid-shaped outcoupling structures are configured as projections on a radiation exit face of the thin-film semiconductor body.

    摘要翻译： 提供一种制造薄膜半导体体的方法。 提供生长衬底。 在生长衬底上外延生长具有漏斗形和/或倒置金字塔形凹陷的半导体层。 这些凹部以半导体材料填充，使得出现棱锥形的外耦合结构。 具有有源层的半导体层序列被应用于外耦合结构。 有源层适用于产生电磁辐射。 将载体施加到半导体层序列上。 至少具有漏斗形和/或倒置的金字塔状凹部的半导体层被分离，使得金字塔形外耦合结构被配置为在薄膜半导体本体的辐射出射面上的突起。