摘要:
A method for doping a semiconductor substrate includes heating the semiconductor substrate by irradiation with laser radiation and at the same time diffusing dopant from a dopant source into the semiconductor substrate in heated regions. The semiconductor substrate is heated by the irradiation with laser radiation. A surface portion of the semiconductor substrate that is less than 10% of the total surface of all irradiated regions is melted and recrystallized. There is also provided a solar cell.
摘要:
In a method for producing a solar cell, a layer stack of dielectric layers is applied to a back of a solar cell substrate and the layer stack is heated and is held at temperatures of at least 700° C. during a time period of at least 5 minutes. The novel solar cell has a layer stack of dielectric layers on its back. At least one of the dielectric layers of the layer stack is densified so that its resistivity to firing-through of pastes with glass components is enhanced.
摘要:
A method for manufacturing a solar cell via a two-stage doping includes the steps of forming an oxide layer, which can be penetrated by a first dopant, on at least one part of the surface of a solar cell substrate, forming an opening in the oxide layer in at least one high-doping region by removing the oxide layer in this high-doping region and diffusing the first dopant into the at least one high-doping region of the solar cell substrate through the opening. The first dopant is diffused into the solar cell substrate through the oxide layer. The diffusing-in through the openings and through the oxide layer takes place at the same time in a common diffusion step and the solar cell substrate is diffused in the common diffusion step in an at least partially hydrophilic state.
摘要:
Solar cell (11; 21; 31) having a dielectric coating arranged on a back side of the solar cell (11; 21; 31) which is at least partly covered by at least one planar contact (12; 22; 32), a boundary line (14; 24; 34) of the at least one planar contact (12; 22; 32) having at least one recess (16a, 16b; 26a, 26b, 26c), and method for producing same.
摘要:
Method for producing a silicon solar cell which is smoothly etched on one side, in which a front side and a rear side of a silicon substrate are etched (10) to form a smooth texture, a dielectric coating is then formed (14, 16) on the rear side of the silicon substrate and the front side of the silicon substrate is subsequently textured (20) by means of a texture etching medium, the dielectric coating formed on the rear side of the silicon substrate being used as an etching mask against the texture etching medium.
摘要:
Solar cell (11; 21; 31) having a dielectric coating arranged on a back side of the solar cell (11; 21; 31) which is at least partly covered by at least one planar contact (12; 22; 32), a boundary line (14; 24; 34) of the at least one planar contact (12; 22; 32) having at least one recess (16a, 16b; 26a, 26b, 26c), and method for producing same.
摘要:
A solar cell has electrical conductors applied on a pattern of electric contacts on a front surface and extending transversely relative thereto with a portion projecting beyond the edge of the solar cell. The formation of the electrical pattern includes at least two elongated portions interconnected by a return portion which extends beyond the one edge. This return portion provides a stiffening suitable for reliable interconnection to an additional solar cell to achieve a connection of two conductors in the projecting region.
摘要:
A simple connection for a solar cell module is composed of a soldered-on, stud-shaped terminal element that is fixed with a retainer element plugged thereover and glued to the back side of the solar module. The projection of the end of the terminal element comprises a connection for a cable.
摘要:
A method for the passivation of crystal defects in polycrystalline or amorphous silicon material using a temperature treatment step in a hydrogen-containing atmosphere the method results in favorable diode properties and favorable passivation properties in amorphous or, respectively, polycrystalline silicon material in a simple manner. Hydrogen-oxygen compounds are reduced at the surface of the silicon material, creating atomic hydrogen that diffuses into the silicon material.
摘要:
A process for the passivation of crystal defects or grain boundaries or internal grain defects or surfaces in an electrically conductive material in a plasma, where the passivation is carried out by the influence of suitable ions on the electrically conductive material to facilitate a shorter process time and lower stress on the electrically conductive material. A high-frequency gas discharge plasma is acted upon by a superimposed d.c. voltage which serves to accelerate the ions, suitable to carry out the passivation, towards the electrically conductive material.