公开(公告)号：US07164236B2

公开(公告)日：2007-01-16

申请号：US10793253

申请日：2004-03-05

申请人： Andrej S. Mitrovic ,  Eric J. Strang ,  Murray D. Sirkis ,  Bill H. Quon ,  Richard Parsons ,  Yuji Tsukamoto

发明人： Andrej S. Mitrovic ,  Eric J. Strang ,  Murray D. Sirkis ,  Bill H. Quon ,  Richard Parsons ,  Yuji Tsukamoto

IPC分类号： H05B31/26 ,  C23F1/00

CPC分类号： H01J37/32082 ,  H01J37/32009 ,  H01J37/32091 ,  H01J37/32532 ,  H01J37/32935

摘要： A method and apparatus for generating and controlling a plasma (130) formed in a capacitively coupled plasma system (100) having a plasma electrode (140) and a bias electrode in the form of a workpiece support member (170), wherein the plasma electrode is unitary and has multiple regions (Ri) defined by a plurality of RF power feed lines (156) and the RF power delivered thereto. The electrode regions may also be defined as electrode segments (420) separated by insulators (426). A set of process parameters A={n, τi, Φi, Pi, S; Li} is defined; wherein n is the number of RF feed lines connected to the electrode upper surface at locations Li, τi is the on-time of the RF power for the ith RF feed line, Φi is the phase of the ith RF feed line relative to a select one of the other RF feed lines, Pi is the RF power delivered to the electrode through the ith RF feed line at location Li, and S is the sequencing of RF power to the electrode through the RF feed lines. One or more of these parameters are adjusted so that operation of the plasma system results in a workpiece (176) being processed with a desired amount or degree of process uniformity.

摘要翻译： 一种用于产生和控制形成在电容耦合等离子体系统（100）中的等离子体（130）的方法和装置，其具有工件支撑构件（170）形式的等离子体电极（140）和偏置电极，其中等离子体电极 是单一的并且具有由多个RF馈电线（156）限定的多个区域（RF）和传递给其的RF功率。 电极区域也可以被定义为由绝缘体（426）分离的电极段（420）。 一组过程参数A = {n，τi，i，P i， 被定义; 其中n是在位置L i1处连接到电极上表面的RF馈送线的数量，τi是针对i 是相对于其他RF馈线中选择的一个RF馈线的第i个RF馈线的相位，P < SUB> i 是通过位置L i i处的第i个RF馈线传送到电极的RF功率，S是RF功率到 电极通过RF馈线。 调整这些参数中的一个或多个，使得等离子体系统的操作导致以期望的量或程度的均匀度处理工件（176）。

公开(公告)号：US07233878B2

公开(公告)日：2007-06-19

申请号：US10767347

申请日：2004-01-30

申请人： Andrej S. Mitrovic ,  Eric J. Strang

发明人： Andrej S. Mitrovic ,  Eric J. Strang

IPC分类号： G01N21/88

CPC分类号： G01B11/0683 ,  H01J37/32935 ,  H01J37/32963

摘要： A method for monitoring consumption of a component, including the steps of emitting a radiation beam onto a first area of the component and detecting a portion of the radiation beam that is refracted by the component. A radiation level signal is generated based at least on a strength of the detected portion of the radiation beam, and a thickness of the component is determined based on the radiation level signal. The thickness of the component is compared to a predetermined thickness value, and a status signal is generated when the comparing step determines that the thickness of the component is substantially equal to or below the predetermined thickness value. When the comparing step determines that the thickness of the component is greater than the predetermined thickness value, the component is exposed to a process that can erode at least a portion of the component.

摘要翻译： 一种用于监视部件的消耗的方法，包括以下步骤：将辐射束发射到部件的第一区域上，并检测被部件折射的辐射束的一部分。 至少基于辐射束的被检测部分的强度产生辐射水平信号，并且基于辐射水平信号确定分量的厚度。 将部件的厚度与预定的厚度值进行比较，并且当比较步骤确定部件的厚度基本上等于或低于预定厚度值时，产生状态信号。 当比较步骤确定组件的厚度大于预定厚度值时，组件暴露于可能侵蚀部件的至少一部分的过程。

公开(公告)号：US08032348B2

公开(公告)日：2011-10-04

申请号：US10673138

申请日：2003-09-30

申请人： Andrej S. Mitrovic ,  Eric J. Strang

发明人： Andrej S. Mitrovic ,  Eric J. Strang

IPC分类号： G06F17/50 ,  G06G7/48 ,  G06F19/00 ,  H01L21/00

CPC分类号： G06F17/5009 ,  G06F2217/16

摘要： A method, system and computer readable medium for facilitating a process performed by a semiconductor processing tool. The method includes inputting data relating to a process performed by the semiconductor processing tool and inputting a first principles physical model relating to the semiconductor processing tool. First principles simulation is then performed using the input data and the physical model to provide a first principles simulation result, and the first principles simulation result is used to facilitate the process performed by the semiconductor processing tool.

摘要翻译： 一种用于促进由半导体处理工具执行的处理的方法，系统和计算机可读介质。 该方法包括输入与半导体处理工具执行的处理有关的数据，并输入与半导体处理工具相关的第一原理物理模型。 然后使用输入数据和物理模型执行第一原理模拟以提供第一原理模拟结果，并且第一原理模拟结果用于促进由半导体处理工具执行的处理。

公开(公告)号：US07353141B2

公开(公告)日：2008-04-01

申请号：US11736789

申请日：2007-04-18

申请人： Andrej S. Mitrovic ,  Eric J. Strang

发明人： Andrej S. Mitrovic ,  Eric J. Strang

IPC分类号： G01N21/88

CPC分类号： G01B11/0683 ,  H01J37/32935 ,  H01J37/32963

摘要： A method for monitoring consumption of a component, including the steps of emitting a radiation beam onto a first area of the component and detecting a portion of the radiation beam that is refracted by the component. A radiation level signal is generated based at least on a strength of the detected portion of the radiation beam, and a thickness of the component is determined based on the radiation level signal. The thickness of the component is compared to a predetermined thickness value, and a status signal is generated when the comparing step determines that the thickness of the component is substantially equal to or below the predetermined thickness value. When the comparing step determines that the thickness of the component is greater than the predetermined thickness value, the component is exposed to a process that can erode at least a portion of the component.

摘要翻译： 一种用于监视部件的消耗的方法，包括以下步骤：将辐射束发射到部件的第一区域上，并检测被部件折射的辐射束的一部分。 至少基于辐射束的被检测部分的强度产生辐射水平信号，并且基于辐射水平信号确定分量的厚度。 将部件的厚度与预定的厚度值进行比较，并且当比较步骤确定部件的厚度基本上等于或低于预定厚度值时，产生状态信号。 当比较步骤确定组件的厚度大于预定厚度值时，组件暴露于可能侵蚀部件的至少一部分的过程。

公开(公告)号：US08050900B2

公开(公告)日：2011-11-01

申请号：US10673583

申请日：2003-09-30

申请人： Andrej S. Mitrovic ,  Eric J. Strang

发明人： Andrej S. Mitrovic ,  Eric J. Strang

IPC分类号： G06F17/50 ,  G06F19/00 ,  G06G7/48 ,  H01L21/00

CPC分类号： G06F17/5018 ,  G06F2217/10 ,  G06F2217/12 ,  G06F2217/80 ,  H01L22/20 ,  H01L2924/0002 ,  Y02P90/265 ,  H01L2924/00

摘要： A method, system, and computer readable medium for facilitating a process performed by a semiconductor processing tool. The method includes inputting data relating to a process performed by the semiconductor processing tool, and inputting a first principles physical model relating to the semiconductor processing tool. First principles simulation is performed using the input data and the physical model to provide a virtual sensor measurement relating to the process performed by the semiconductor processing tool, and the virtual sensor measurement is used to facilitate the process performed by the semiconductor processing tool.

摘要翻译： 一种用于促进由半导体处理工具执行的处理的方法，系统和计算机可读介质。 该方法包括输入与半导体处理工具执行的处理相关的数据，以及输入与半导体处理工具相关的第一原理物理模型。 使用输入数据和物理模型执行第一原理模拟，以提供与由半导体处理工具执行的处理相关的虚拟传感器测量，并且虚拟传感器测量用于促进由半导体处理工具执行的处理。

公开(公告)号：US08014991B2

公开(公告)日：2011-09-06

申请号：US10673501

申请日：2003-09-30

申请人： Andrej S. Mitrovic ,  Eric J. Strang

发明人： Andrej S. Mitrovic ,  Eric J. Strang

IPC分类号： G06F17/50 ,  G06F19/00 ,  G06G7/48 ,  H01L21/00

CPC分类号： G06F17/5018 ,  G06F2217/10 ,  G06F2217/12 ,  G06F2217/80 ,  H01L22/20 ,  H01L2924/0002 ,  Y02P90/265 ,  H01L2924/00

摘要： A method, system and computer readable medium for facilitating a process performed by a semiconductor processing tool. The method includes inputting data relating to a process performed by the semiconductor processing tool, and inputting a first principles physical model relating to the semiconductor processing tool. First principles simulation is then performed using the input data and the physical model to provide a simulation result for the process performed by the semiconductor processing tool, and the simulation result is used as part of a data set that characterizes the process performed by the semiconductor processing tool.

摘要翻译： 一种用于促进由半导体处理工具执行的处理的方法，系统和计算机可读介质。 该方法包括输入与半导体处理工具执行的处理相关的数据，以及输入与半导体处理工具相关的第一原理物理模型。 然后使用输入数据和物理模型执行第一原理模拟，以提供由半导体处理工具执行的处理的仿真结果，并且将模拟结果用作表征由半导体处理执行的处理的数据集的一部分 工具。

公开(公告)号：US06806653B2

公开(公告)日：2004-10-19

申请号：US10355203

申请日：2003-01-31

申请人： Eric J. Strang ,  Andrej S. Mitrovic

发明人： Eric J. Strang ,  Andrej S. Mitrovic

IPC分类号： H01J724

CPC分类号： H01J37/32174 ,  H01J37/32082

摘要： An electrode assembly for use in a plasma processing system including a base electrode adapted to be coupled to a source of RF energy, a removable electrode removably coupled to the base electrode, and a material interposed between a surface of the base electrode and a surface of the removable electrode.

摘要翻译： 一种用于等离子体处理系统的电极组件，其包括适于耦合到RF能量源的基极电极，可移除地耦合到所述基极电极的可移除电极以及插入所述基极电极的表面和 可拆卸电极。

公开(公告)号：US07482757B2

公开(公告)日：2009-01-27

申请号：US10472553

申请日：2002-03-25

申请人： Bill H. Quon ,  Jovan Jevtic ,  Sam Antley ,  Eric J. Strang

发明人： Bill H. Quon ,  Jovan Jevtic ,  Sam Antley ,  Eric J. Strang

IPC分类号： H01J7/24

CPC分类号： H01J37/321 ,  H01J37/32357 ,  H01J37/3266

摘要： A high-density plasma source (100) is disclosed. The source includes an annular insulating body (300) with an annular cavity (316) formed within. An inductor coil (340) serving as an antenna is arranged within the annular cavity and is operable to generate a first magnetic field within a plasma duct (60) interior region (72) and inductively couple to the plasma when the annular body is arranged to surround a portion of the plasma duct. A grounded conductive housing (400) surrounds the annular insulating body. An electrostatic shield (360) is arranged adjacent the inner surface of the insulating body and is grounded to the conductive housing. Upper and lower magnet rings (422 and 424) are preferably arranged adjacent the upper and lower surfaces of the annular insulating body outside of the conductive housing. A T-match network is in electrical communication with said inductor coil and is adapted to provide for efficient transfer of RF power from an RF power source to the plasma. At least one plasma source can be used to form a high-density plasma suitable for plasma processing of a workpiece residing in a plasma chamber in communication with the at least one source.

摘要翻译： 公开了一种高密度等离子体源（100）。 源包括环形绝缘体（300），其内部形成有环形空腔（316）。 用作天线的电感线圈（340）布置在环形空腔内，并且可操作以在等离子体管道（60）内部区域（72）内产生第一磁场，并且当环形体布置成 围绕等离子体管道的一部分。 接地导电壳体（400）围绕环形绝缘体。 静电屏蔽（360）被布置成邻近绝缘体的内表面并且被接地到导电壳体。 上，下磁环（422和424）优选地布置成邻近导电外壳外的环形绝缘体的上表面和下表面。 T匹配网络与所述电感器线圈电连通，并且适于提供从RF功率源到等离子体的RF功率的有效传输。 可以使用至少一个等离子体源来形成适于等离子体处理高密度等离子体处理的工件，该工件位于与至少一个源连通的等离子体室中。

公开(公告)号：US08207476B2

公开(公告)日：2012-06-26

申请号：US12631278

申请日：2009-12-04

申请人： Yuji Tsukamoto ,  Eric J. Strang

发明人： Yuji Tsukamoto ,  Eric J. Strang

IPC分类号： H05B1/02 ,  H05B3/68 ,  F27B5/06 ,  F27B5/18

CPC分类号： F27D5/0037 ,  C23C16/4586 ,  C23C16/46 ,  H01J2237/2001 ,  H01L21/67103

摘要： A substrate holder for supporting a substrate in a processing system includes a temperature controlled support base having a first temperature, and a substrate support opposing the temperature controlled support base and configured to support the substrate. Also included is one or more heating elements coupled to the substrate support and configured to heat the substrate support to a second temperature above the first temperature, and a thermal insulator disposed between the temperature controlled support base and the substrate support. The thermal insulator includes a non-uniform spatial variation of the heat transfer coefficient (W/m2-K) through the thermal insulator between the temperature controlled support base and the substrate support.

摘要翻译： 用于在处理系统中支撑衬底的衬底保持器包括具有第一温度的温度控制的支撑基座和与温度受控的支撑基座相对并且被配置为支撑衬底的衬底支撑件。 还包括一个或多个加热元件，其耦合到衬底支撑件并且被配置为将衬底支撑件加热到高于第一温度的第二温度，以及设置在温度受控支撑基底和衬底支撑件之间的热绝缘体。 热绝缘体包括通过温度控制的支撑基底和基底支撑件之间的热绝缘体的传热系数（W / m 2 -K）的不均匀的空间变化。

公开(公告)号：US07723648B2

公开(公告)日：2010-05-25

申请号：US11525815

申请日：2006-09-25

申请人： Yuji Tsukamoto ,  Eric J. Strang

发明人： Yuji Tsukamoto ,  Eric J. Strang

IPC分类号： H05B3/68 ,  F27B5/14

CPC分类号： F27D5/0037 ,  C23C16/4586 ,  C23C16/46 ,  H01J2237/2001 ,  H01L21/67103

摘要： A substrate holder for supporting a substrate in a processing system includes a temperature controlled support base having a first temperature, and a substrate support opposing the temperature controlled support base and configured to support the substrate. Also included is one or more heating elements coupled to the substrate support and configured to heat the substrate support to a second temperature above the first temperature, and a thermal insulator disposed between the temperature controlled support base and the substrate support. The thermal insulator includes a non-uniform spatial variation of the heat transfer coefficient (W/m2-K) through the thermal insulator between the temperature controlled support base and the substrate support.

摘要翻译： 用于在处理系统中支撑衬底的衬底保持器包括具有第一温度的温度控制的支撑基座和与温度受控的支撑基座相对并且被配置为支撑衬底的衬底支撑件。 还包括一个或多个加热元件，其耦合到衬底支撑件并且被配置为将衬底支撑件加热到高于第一温度的第二温度，以及设置在温度受控支撑基底和衬底支撑件之间的热绝缘体。 热绝缘体包括通过温度控制的支撑基底和基底支撑件之间的热绝缘体的传热系数（W / m 2 -K）的不均匀的空间变化。