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    Etching method used in fabrications of microstructures
    9.
    发明申请
    Etching method used in fabrications of microstructures 有权
    用于微结构制造中的蚀刻方法

    公开(公告)号：US20050020089A1

    公开(公告)日：2005-01-27

    申请号：US10666002

    申请日：2003-09-17

    申请人： Hongqin Shi ,  Gregory Schaadt ,  Andrew Huibers ,  Satyadev Patel

    发明人： Hongqin Shi ,  Gregory Schaadt ,  Andrew Huibers ,  Satyadev Patel

    IPC分类号： G02B26/08 ,  H01L21/00 ,  H01L21/302 ,  H01L21/461

    CPC分类号： H01L21/67069 ,  B81C1/00595 ,  B81C2201/0132 ,  G02B26/0841

    摘要： The present invention discloses a method and apparatus for removing the sacrificial materials in fabrications of microstructures using a vapor phase etchant recipe having a spontaneous vapor phase chemical etchant. The vapor phase etchant recipe has a mean-free-path corresponding to the minimum thickness of the sacrificial layers between the structural layers of the microstructure. This method is of particular importance in removing the sacrificial layers underneath the structural layers of the microstructure.

    摘要翻译： 本发明公开了一种使用具有自发气相化学蚀刻剂的气相蚀刻剂配方去除微结构制造中的牺牲材料的方法和装置。 气相蚀刻剂配方具有对应于微结构的结构层之间的牺牲层的最小厚度的平均自由程。 该方法在去除微结构结构层下面的牺牲层时尤其重要。

    APPARATUS AND METHOD FOR DETECTING AN ENDPOINT IN A VAPOR PHASE ETCH
    10.
    发明申请
    APPARATUS AND METHOD FOR DETECTING AN ENDPOINT IN A VAPOR PHASE ETCH 审中-公开
    用于检测蒸气相蚀刻中的端点的装置和方法

    公开(公告)号：US20070119814A1

    公开(公告)日：2007-05-31

    申请号：US11627026

    申请日：2007-01-25

    申请人： Satyadev Patel ,  Gregory Schaadt ,  Douglas MacDonald ,  Niles MacDonald ,  Hongqin Shi

    发明人： Satyadev Patel ,  Gregory Schaadt ,  Douglas MacDonald ,  Niles MacDonald ,  Hongqin Shi

    IPC分类号： C03C25/68 ,  G01L21/30 ,  H01L21/306 ,  H01L21/461 ,  B44C1/22

    CPC分类号： H01J37/32963 ,  B81C1/00476 ,  B81C1/00587 ,  B81C99/0065 ,  B81C2201/0132 ,  B81C2201/0138 ,  H01J37/32449 ,  H01J37/32935

    摘要： Processes for the removal of a layer or region from a workpiece material by contact with a process gas in the manufacture of a microstructure are enhanced by the ability to accurately determine the endpoint of the removal step. A vapor phase etchant is used to remove a material that has been deposited on a substrate, with or without other deposited structure thereon. By creating an impedance at the exit of an etching chamber (or downstream thereof), as the vapor phase etchant passes from the etching chamber, a gaseous product of the etching reaction is monitored; and the endpoint of the removal process can be determined. The vapor phase etching process can be flow through, a combination of flow through and pulse, or recirculated back to the etching chamber

    摘要翻译： 通过与制造微结构中的工艺气体接触从工件材料去除层或区域的工艺通过精确地确定去除步骤的终点的能力增强。 气相蚀刻剂用于去除已经沉积在基底上的材料，其上具有或不具有其它沉积结构。 通过在蚀刻室（或其下游）的出口处产生阻抗，当气相蚀刻剂从蚀刻室通过时，监测蚀刻反应的气态产物; 并且可以确定去除过程的终点。 气相蚀刻工艺可以流过，流过和脉冲的组合，或再循环回蚀刻室