Etching method used in fabrications of microstructures
    9.
    发明申请
    Etching method used in fabrications of microstructures 有权
    用于微结构制造中的蚀刻方法

    公开(公告)号:US20050020089A1

    公开(公告)日:2005-01-27

    申请号:US10666002

    申请日:2003-09-17

    摘要: The present invention discloses a method and apparatus for removing the sacrificial materials in fabrications of microstructures using a vapor phase etchant recipe having a spontaneous vapor phase chemical etchant. The vapor phase etchant recipe has a mean-free-path corresponding to the minimum thickness of the sacrificial layers between the structural layers of the microstructure. This method is of particular importance in removing the sacrificial layers underneath the structural layers of the microstructure.

    摘要翻译: 本发明公开了一种使用具有自发气相化学蚀刻剂的气相蚀刻剂配方去除微结构制造中的牺牲材料的方法和装置。 气相蚀刻剂配方具有对应于微结构的结构层之间的牺牲层的最小厚度的平均自由程。 该方法在去除微结构结构层下面的牺牲层时尤其重要。