公开(公告)号：US20140057457A1

公开(公告)日：2014-02-27

申请号：US13595873

申请日：2012-08-27

申请人： Yun Wang ,  Andrew M. Hawryluk ,  Xiaoru Wang ,  Xiaohua Shen

发明人： Yun Wang ,  Andrew M. Hawryluk ,  Xiaoru Wang ,  Xiaohua Shen

IPC分类号： H01L21/268 ,  H01L21/02

CPC分类号： H01L21/268 ,  H01L21/02107 ,  H01L21/28518 ,  H01L27/14634 ,  H01L27/1469

摘要： Methods of annealing a thin semiconductor wafer are disclosed. The methods allow for high-temperature annealing of one side of a thin semiconductor wafer without damaging or overheating heat-sensitive electronic device features that are either on the other side of the wafer or embedded within the wafer. The annealing is performed at a temperature below the melting point of the wafer so that no significant dopant redistribution occurs during the annealing process. The methods can be applied to activating dopants or to forming ohmic contacts.

摘要翻译： 公开了薄半导体晶片的退火方法。 该方法允许薄半导体晶片的一侧进行高温退火，而不会损坏或过热晶片另一侧或嵌入晶片内的热敏电子器件特征。 在低于晶片的熔点的温度下进行退火，使得在退火过程中不会发生显着的掺杂剂再分布。 该方法可用于活化掺杂剂或形成欧姆接触。

公开(公告)号：US09190570B2

公开(公告)日：2015-11-17

申请号：US13678946

申请日：2012-11-16

申请人： Andrew M. Hawryluk ,  Yun Wang

发明人： Andrew M. Hawryluk ,  Yun Wang

IPC分类号： H01L29/10 ,  H01L29/76 ,  H01L31/036 ,  H01L31/112 ,  H01L33/32 ,  H01L33/38 ,  H01L33/00

CPC分类号： H01L33/32 ,  H01L33/0075 ,  H01L33/0095 ,  H01L33/38

摘要： The disclosure is directed to laser annealing of GaN light-emitting diodes (LEDs) with reduced pattern effects. A method includes forming elongate conductive structures atop either an n-GaN layer or a p-GaN layer of a GaN LED structure, the elongate conductive structures having long and short dimensions, and being spaced apart and substantially aligned in the long dimensions. The method also includes generating a P-polarized anneal laser beam that has an anneal wavelength that is greater than the short dimension. The method also includes irradiating either the n-GaN layer or the p-GaN layer of the GaN LED structure through the conductive structures with the P-polarized anneal laser beam, including directing the anneal laser beam relative to the conductive structures so that the polarization direction is perpendicular to the long dimension of the conductive structures.

摘要翻译： 本发明涉及具有减小的图案效应的GaN发光二极管（LED）的激光退火。 一种方法包括在GaN LED结构的n-GaN层或p-GaN层顶上形成细长的导电结构，细长的导电结构具有长和短的尺寸，并且在长尺寸上间隔开并基本对准。 该方法还包括产生具有大于短尺寸的退火波长的P偏振退火激光束。 该方法还包括通过具有P偏振退火激光束的导电结构照射GaN LED结构的n-GaN层或p-GaN层，包括相对于导电结构引导退火激光束使得极化 方向垂直于导电结构的长尺寸。

公开(公告)号：US08658451B2

公开(公告)日：2014-02-25

申请号：US13136019

申请日：2011-07-20

申请人： Yun Wang ,  Andrew M. Hawryluk

发明人： Yun Wang ,  Andrew M. Hawryluk

IPC分类号： H01L21/00

CPC分类号： H01L33/42 ,  H01L33/0095 ,  H01L33/32 ,  H01L2933/0016

摘要： Methods of performing fast thermal annealing in forming GaN light-emitting diodes (LEDs) are disclosed, as are GaN LEDs formed using fast thermal annealing. An exemplary method includes forming a GaN multilayer structure having a n-GaN layer and a p-GaN layer that sandwich an active layer. The method includes performing fast thermal annealing of the p-GaN layer using either a laser or a flash lamp. The method further includes forming a transparent conducting layer atop the GaN multilayer structure, and adding a p-contact to the transparent conducting layer and a n-contact to the n-GaN layer. The resultant GaN LEDs have enhanced output power, lower turn-on voltage and reduced series resistance.

摘要翻译： 公开了在形成GaN发光二极管（LED）中执行快速热退火的方法，以及使用快速热退火形成的GaN LED。 一种示例性的方法包括形成具有n-GaN层的GaN多层结构和夹持有源层的p-GaN层。 该方法包括使用激光或闪光灯来进行p-GaN层的快速热退火。 所述方法还包括在所述GaN多层结构顶部形成透明导电层，以及向所述n-GaN层向所述透明导电层添加p接触和n接触。 所得GaN LED具有增强的输出功率，较低的导通电压和降低的串联电阻。

公开(公告)号：US08460959B2

公开(公告)日：2013-06-11

申请号：US13199276

申请日：2011-08-24

申请人： Yun Wang ,  Andrew M. Hawryluk

发明人： Yun Wang ,  Andrew M. Hawryluk

IPC分类号： H01L21/00

CPC分类号： H01L33/0095 ,  H01L33/32 ,  H01L33/40 ,  H01L2933/0016

摘要： Methods of performing fast thermal annealing in forming GaN light-emitting diodes (LEDs) are disclosed, as are GaN LEDs formed using fast thermal annealing having a time duration of 10 seconds or faster. An exemplary method includes forming a GaN multilayer structure having a n-GaN layer and a p-GaN layer that sandwich an active layer. The method includes performing fast thermal annealing of the p-GaN layer using either a laser or a flash lamp. The method further includes forming a transparent conducting layer atop the GaN multilayer structure, and adding a p-contact to the transparent conducting layer and a n-contact to the n-GaN layer. The resultant GaN LEDs have enhanced output power, lower turn-on voltage and reduced series resistance.

摘要翻译： 公开了在形成GaN发光二极管（LED）中执行快速热退火的方法，以及使用10秒或更快的持续时间的快速热退火形成的GaN LED。 一种示例性的方法包括形成具有n-GaN层的GaN多层结构和夹持有源层的p-GaN层。 该方法包括使用激光或闪光灯来进行p-GaN层的快速热退火。 所述方法还包括在所述GaN多层结构顶部形成透明导电层，以及向所述n-GaN层向所述透明导电层添加p接触和n接触。 所得GaN LED具有增强的输出功率，较低的导通电压和降低的串联电阻。

公开(公告)号：US20110309374A1

公开(公告)日：2011-12-22

申请号：US13199276

申请日：2011-08-24

申请人： Yun Wang ,  Andrew M. Hawryluk

发明人： Yun Wang ,  Andrew M. Hawryluk

IPC分类号： H01L33/02

CPC分类号： H01L33/0095 ,  H01L33/32 ,  H01L33/40 ,  H01L2933/0016

摘要： Methods of performing fast thermal annealing in forming GaN light-emitting diodes (LEDs) are disclosed, as are GaN LEDs formed using fast thermal annealing having a time duration of 10 seconds or faster. An exemplary method includes forming a GaN multilayer structure having a n-GaN layer and a p-GaN layer that sandwich an active layer. The method includes performing fast thermal annealing of the p-GaN layer using either a laser or a flash lamp. The method further includes forming a transparent conducting layer atop the GaN multilayer structure, and adding a p-contact to the transparent conducting layer and a n-contact to the n-GaN layer. The resultant GaN LEDs have enhanced output power, lower turn-on voltage and reduced series resistance.

摘要翻译： 公开了在形成GaN发光二极管（LED）中执行快速热退火的方法，以及使用10秒或更快的持续时间的快速热退火形成的GaN LED。 一种示例性的方法包括形成具有n-GaN层的GaN多层结构和夹持有源层的p-GaN层。 该方法包括使用激光或闪光灯来进行p-GaN层的快速热退火。 所述方法还包括在所述GaN多层结构顶部形成透明导电层，以及向所述n-GaN层向所述透明导电层添加p接触和n接触。 所得GaN LED具有增强的输出功率，较低的导通电压和降低的串联电阻。

公开(公告)号：US20140131723A1

公开(公告)日：2014-05-15

申请号：US13678946

申请日：2012-11-16

申请人： Andrew M. Hawryluk ,  Yun Wang

发明人： Andrew M. Hawryluk ,  Yun Wang

IPC分类号： H01L33/32 ,  H01L33/00

CPC分类号： H01L33/32 ,  H01L33/0075 ,  H01L33/0095 ,  H01L33/38

摘要： The disclosure is directed to laser annealing of GaN light-emitting diodes (LEDs) with reduced pattern effects. A method includes forming elongate conductive structures atop either an n-GaN layer or a p-GaN layer of a GaN LED structure, the elongate conductive structures having long and short dimensions, and being spaced apart and substantially aligned in the long dimensions. The method also includes generating a P-polarized anneal laser beam that has an anneal wavelength that is greater than the short dimension. The method also includes irradiating either the n-GaN layer or the p-GaN layer of the GaN LED structure through the conductive structures with the P-polarized anneal laser beam, including directing the anneal laser beam relative to the conductive structures so that the polarization direction is perpendicular to the long dimension of the conductive structures.

摘要翻译： 本发明涉及具有减小的图案效应的GaN发光二极管（LED）的激光退火。 一种方法包括在GaN LED结构的n-GaN层或p-GaN层顶上形成细长的导电结构，细长的导电结构具有长和短的尺寸，并且在长尺寸上间隔开并基本对准。 该方法还包括产生具有大于短尺寸的退火波长的P偏振退火激光束。 该方法还包括通过具有P偏振退火激光束的导电结构照射GaN LED结构的n-GaN层或p-GaN层，包括相对于导电结构引导退火激光束使得极化 方向垂直于导电结构的长尺寸。

公开(公告)号：US20110108796A1

公开(公告)日：2011-05-12

申请号：US12590360

申请日：2009-11-06

申请人： Yun Wang ,  Andrew M. Hawryluk

发明人： Yun Wang ,  Andrew M. Hawryluk

IPC分类号： H01L33/00

CPC分类号： H01L33/0095 ,  H01L33/007 ,  H01L33/025 ,  H01L33/42

摘要： Methods of performing laser spike annealing (LSA) in forming gallium nitride (GaN) light-emitting diodes (LEDs) as well as GaN LEDs formed using LSA are disclosed. An exemplary method includes forming atop a substrate a GaN multilayer structure having a n-GaN layer and a p-GaN layer that sandwich an active layer. The method also includes performing LSA by scanning a laser beam over the p-GaN layer. The method further includes forming a transparent conducting layer atop the GaN multilayer structure, and adding a p-contact to the transparent conducting layer and a n-contact to the n-GaN layer. The resultant GaN LEDs have enhanced output power, lower turn-on voltage and reduced series resistance.

摘要翻译： 公开了在形成氮化镓（GaN）发光二极管（LED）以及使用LSA形成的GaN LED中执行激光尖峰退火（LSA）的方法。 一种示例性方法包括在衬底上形成具有n-GaN层的GaN多层结构和夹持有源层的p-GaN层。 该方法还包括通过在p-GaN层上扫描激光束来执行LSA。 所述方法还包括在所述GaN多层结构顶部形成透明导电层，以及向所述n-GaN层向所述透明导电层添加p接触和n接触。 所得GaN LED具有增强的输出功率，较低的导通电压和降低的串联电阻。

公开(公告)号：US20110089523A1

公开(公告)日：2011-04-21

申请号：US12975267

申请日：2010-12-21

申请人： Arthur W. Zafiropoulo ,  Yun Wang ,  Andrew M. Hawryluk

发明人： Arthur W. Zafiropoulo ,  Yun Wang ,  Andrew M. Hawryluk

IPC分类号： H01L29/04 ,  C30B13/22

CPC分类号： H01L21/8221 ,  H01L21/02532 ,  H01L21/02645 ,  H01L21/02678 ,  H01L27/0688 ,  Y10T29/53174 ,  Y10T117/1024

摘要： Provided are systems and processes for forming a three-dimensional circuit on a substrate. A radiation source produces a beam that is directed at a substrate having an isolating layer interposed between circuit layers. The circuit layers communicate with reach other via a seed region exhibiting a crystalline surface. At least one circuit layer has an initial microstructure that exhibits electronic properties unsuitable for forming circuit features therein. After being controllably heat treated, the initial microstructure of the circuit layer having unsuitable properties is transformed into one that exhibits electronic properties suitable for forming circuit feature therein. Also provided are three-dimensional circuit structures optionally formed by the inventive systems and/or processes.

摘要翻译： 提供了在基板上形成三维电路的系统和工艺。 辐射源产生被引导到衬底上的光束，该衬底具有介于电路层之间的隔离层。 电路层通过呈现结晶表面的种子区域与达到其它层连通。 至少一个电路层具有显示不适于在其中形成电路特征的电子性质的初始微结构。 在可控地热处理之后，具有不合适特性的电路层的初始微结构被转化成具有适于形成电路特性的电子特性的微结构。 还提供了可选地由本发明的系统和/或过程形成的三维电路结构。

公开(公告)号：US06495390B2

公开(公告)日：2002-12-17

申请号：US09940102

申请日：2001-08-27

申请人： Andrew M. Hawryluk ,  Somit Talwar ,  Yun Wang ,  Michael O. Thompson

发明人： Andrew M. Hawryluk ,  Somit Talwar ,  Yun Wang ,  Michael O. Thompson

IPC分类号： H01L2100

CPC分类号： B23K26/18 ,  B23K26/009 ,  H01L21/268 ,  H01L21/324

摘要： A method, apparatus and system for controlling the amount of heat transferred to a process region (30) of a workpiece (W) from exposure with laser radiation (10) using a thermally induced reflectivity switch layer (60). The apparatus of the invention is a film stack (6) having an absorber layer (50) deposited atop the workpiece, such as a silicon wafer. A portion of the absorber layer covers the process region. The absorber layer absorbs laser radiation and converts the absorbed radiation into heat. A reflective switch layer (60) is deposited atop the absorber layer. The reflective switch layer may comprise one or more thin film layers, and preferably includes a thermal insulator layer and a transition layer. The portion of the reflective switch layer covering the process region has a temperature that corresponds to the temperature of the process region. The reflectivity of the reflectivity switch layer changes from a low reflectivity state to a high reflectivity state at a critical temperature so as to limit the amount of radiation absorbed by the absorber layer by reflecting the incident radiation. This, in turn, limits the amount of heat transferred to the process region from the absorber layer.

摘要翻译： 一种用于通过使用热诱导反射率开关层（60）从激光辐射（10）曝光来控制传送到工件（W）的处理区域（30）的热量的方法，装置和系统。 本发明的装置是具有沉积在工件上方的诸如硅晶片的吸收层（50）的薄膜叠层（6）。 吸收层的一部分覆盖工艺区域。 吸收层吸收激光辐射并将吸收的辐射转化成热。 反射开关层（60）沉积在吸收层顶部。 反射开关层可以包括一个或多个薄膜层，并且优选地包括热绝缘体层和过渡层。 覆盖处理区域的反射开关层的部分具有对应于处理区域的温度的温度。 反射率开关层的反射率在临界温度从低反射率状态变为高反射率状态，以通过反射入射辐射来限制吸收层吸收的辐射量。 这反过来限制了从吸收层传递到处理区域的热量。

公开(公告)号：US09490128B2

公开(公告)日：2016-11-08

申请号：US13595873

申请日：2012-08-27

申请人： Yun Wang ,  Andrew M. Hawryluk ,  Xiaoru Wang ,  Xiaohua Shen

发明人： Yun Wang ,  Andrew M. Hawryluk ,  Xiaoru Wang ,  Xiaohua Shen

IPC分类号： H01L21/268 ,  H01L27/146 ,  H01L21/02 ,  H01L21/285

CPC分类号： H01L21/268 ,  H01L21/02107 ,  H01L21/28518 ,  H01L27/14634 ,  H01L27/1469

摘要： Methods of annealing a thin semiconductor wafer are disclosed. The methods allow for high-temperature annealing of one side of a thin semiconductor wafer without damaging or overheating heat-sensitive electronic device features that are either on the other side of the wafer or embedded within the wafer. The annealing is performed at a temperature below the melting point of the wafer so that no significant dopant redistribution occurs during the annealing process. The methods can be applied to activating dopants or to forming ohmic contacts.

摘要翻译： 公开了薄半导体晶片的退火方法。 该方法允许对薄半导体晶片的一侧进行高温退火，而不会损坏或过热晶片另一侧或嵌入晶片内的热敏电子器件特征。 在低于晶片的熔点的温度下进行退火，使得在退火过程中不会发生显着的掺杂剂再分布。 该方法可用于活化掺杂剂或形成欧姆接触。