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    FLOW METER CALIBRATION SYSTEM
    1.
    发明申请
    FLOW METER CALIBRATION SYSTEM 审中-公开
    流量计校准系统

    公开(公告)号：US20130253872A1

    公开(公告)日：2013-09-26

    申请号：US13425023

    申请日：2012-03-20

    申请人： Anthony Curtis ,  Soovo Sen ,  Prakash Mistry ,  Hai Wang ,  Michael George Brosseau

    发明人： Anthony Curtis ,  Soovo Sen ,  Prakash Mistry ,  Hai Wang ,  Michael George Brosseau

    IPC分类号： G01F25/00 ,  G06F19/00

    CPC分类号： G01F25/0007

    摘要： A method to calibrate a flow meter includes passing a predetermined volume of fluid through a flow meter for calibration and determining a time duration of calibration from a start time to a stop time. One or more characteristics of the flow rate of the fluid is measured with the flow meter during the time duration and a plurality of time stamped measurements based on the one or more measured flow rate characteristics are generated. The flow meter is then calibrated based on the start time, the stop time, and the plurality of time stamped measurements.

    摘要翻译： 校准流量计的方法包括使预定体积的流体通过流量计进行校准，并从开始时间到停止时间确定校准的持续时间。 在持续时间期间用流量计测量流体流速的一个或多个特性，并且基于一个或多个测量的流量特性产生多个时间戳测量值。 然后基于开始时间，停止时间和多个时间戳测量来校准流量计。

    Mixing energized and non-energized gases for silicon nitride deposition
    3.
    发明申请
    Mixing energized and non-energized gases for silicon nitride deposition 审中-公开
    混合通电和无能气体用于氮化硅沉积

    公开(公告)号：US20060162661A1

    公开(公告)日：2006-07-27

    申请号：US11040712

    申请日：2005-01-22

    申请人： Kee Jung ,  Dale Du Bois ,  Lun Tsuei ,  Lihua Huang ,  Martin Seamons ,  Soovo Sen ,  Reza Arghavani ,  Michael Kwan

    发明人： Kee Jung ,  Dale Du Bois ,  Lun Tsuei ,  Lihua Huang ,  Martin Seamons ,  Soovo Sen ,  Reza Arghavani ,  Michael Kwan

    IPC分类号： H05H1/24 ,  C23C16/00 ,  H01L21/306 ,  C23F1/00 ,  B08B6/00

    CPC分类号： C23C16/45574 ,  C23C16/345 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/50 ,  H01J37/3244 ,  H01L21/0217 ,  H01L21/3185

    摘要： A dual channel gas distributor can simultaneously distribute plasma species of an first process gas and a non-plasma second process gas into a process zone of a substrate processing chamber. The gas distributor has a localized plasma box with a first inlet to receive a first process gas, and opposing top and bottom plates that are capable of being electrically biased relative to one another to define a localized plasma zone in which a plasma of the first process gas can be formed. The top plate has a plurality of spaced apart gas spreading holes to spread the first process gas across the localized plasma zone, and the bottom plate has a plurality of first outlets to distribute plasma species of the plasma of the first process gas into the process zone. A plasma isolated gas feed has a second inlet to receive the second process gas and a plurality of second outlets to pass the second process gas into the process zone. A plasma isolator is between the second inlet and second outlets to prevent formation of a plasma of the second process gas in the plasma isolated gas feed.

    摘要翻译： 双通道气体分配器可以将第一工艺气体和非等离子体第二工艺气体的等离子体种类同时分配到衬底处理室的工艺区域中。 气体分配器具有局部等离子体盒，其具有第一入口以接收第一工艺气体，以及相对的顶板和底板，其能够相对于彼此电偏置以限定局部等离子体区，其中第一工艺的等离子体 可以形成气体。 顶板具有多个间隔开的气体扩散孔，以将第一处理气体扩散通过局部等离子体区域，并且底板具有多个第一出口，用于将第一处理气体的等离子体的等离子体物质分配到处理区 。 等离子体隔离气体进料具有用于接收第二处理气体的第二入口和多个第二出口以将第二处理气体通入处理区。 等离子体隔离器位于第二入口和第二出口之间，以防止在等离子体隔离气体进料中形成第二工艺气体的等离子体。

    Substrate heater assembly
    5.
    发明申请
    Substrate heater assembly 有权
    基板加热器总成

    公开(公告)号：US20050078953A1

    公开(公告)日：2005-04-14

    申请号：US10684054

    申请日：2003-10-10

    申请人： Mark Fodor ,  Sophia Velastegui ,  Soovo Sen ,  Visweswaren Sivaramakrishnan ,  Peter Lee ,  Mario Silvetti

    发明人： Mark Fodor ,  Sophia Velastegui ,  Soovo Sen ,  Visweswaren Sivaramakrishnan ,  Peter Lee ,  Mario Silvetti

    IPC分类号： C23C16/458 ,  C23C16/46 ,  H01L21/687 ,  F26B3/30 ,  F26B19/00 ,  H01L21/20

    CPC分类号： C23C16/4585 ,  C23C16/46 ,  H01L21/68735

    摘要： A substrate heater assembly for supporting a substrate of a predetermined standardized diameter during processing is provided. In one embodiment, the substrate heater assembly includes a body having an upper surface, a lower surface and an embedded heating element. A substrate support surface is formed in the upper surface of the body and defines a portion of a substrate receiving pocket. An annular wall is oriented perpendicular to the upper surface and has a length of at least one half a thickness of the substrate. The wall bounds an outer perimeter of the substrate receiving pocket and has a diameter less than about 0.5 mm greater than the predetermined substrate diameter.

    摘要翻译： 提供了一种用于在处理期间支撑预定标准直径的基板的基板加热器组件。 在一个实施例中，基板加热器组件包括具有上表面，下表面和嵌入式加热元件的主体。 衬底支撑表面形成在主体的上表面中并且限定衬底接收袋的一部分。 环形壁垂直于上表面定向并且具有衬底的至少一半厚度的长度。 该壁限定了基板接收槽的外周边，并具有小于预定基板直径的直径小于约0.5mm的直径。

    Substrate heater assembly
    6.
    发明授权
    Substrate heater assembly 有权
    基板加热器总成

    公开(公告)号：US07024105B2

    公开(公告)日：2006-04-04

    申请号：US10684054

    申请日：2003-10-10

    申请人： Mark A. Fodor ,  Sophia M. Velastegui ,  Soovo Sen ,  Visweswaren Sivaramakrishnan ,  Peter Wai-Man Lee ,  Mario David Silvetti

    发明人： Mark A. Fodor ,  Sophia M. Velastegui ,  Soovo Sen ,  Visweswaren Sivaramakrishnan ,  Peter Wai-Man Lee ,  Mario David Silvetti

    IPC分类号： F26B19/00

    CPC分类号： C23C16/4585 ,  C23C16/46 ,  H01L21/68735

    摘要： A substrate heater assembly for supporting a substrate of a predetermined standardized diameter during processing is provided. In one embodiment, the substrate heater assembly includes a body having an upper surface, a lower surface and an embedded heating element. A substrate support surface is formed in the upper surface of the body and defines a portion of a substrate receiving pocket. An annular wall is oriented perpendicular to the upper surface and has a length of at least one half a thickness of the substrate. The wall bounds an outer perimeter of the substrate receiving pocket and has a diameter less than about 0.5 mm greater than the predetermined substrate diameter.

    摘要翻译： 提供了一种用于在处理期间支撑预定标准直径的基板的基板加热器组件。 在一个实施例中，基板加热器组件包括具有上表面，下表面和嵌入式加热元件的主体。 衬底支撑表面形成在主体的上表面中并且限定衬底接收袋的一部分。 环形壁垂直于上表面定向并且具有衬底的至少一半厚度的长度。 该壁限定了基板接收槽的外周边，并具有小于预定基板直径的直径小于约0.5mm的直径。

    Mixing Energized and Non-Energized Gases for Silicon Nitride Deposition
    9.
    发明申请
    Mixing Energized and Non-Energized Gases for Silicon Nitride Deposition 审中-公开
    用于氮化硅沉积的混合通电和非能量气体

    公开(公告)号：US20120009803A1

    公开(公告)日：2012-01-12

    申请号：US13212153

    申请日：2011-08-17

    申请人： Kee Bum Jung ,  Dale R. Du Bois ,  Lun Tsuei ,  Lihua Li Huang ,  Martin Jay Seamons ,  Soovo Sen ,  Reza Arghavani ,  Michael Chiu Kwan

    发明人： Kee Bum Jung ,  Dale R. Du Bois ,  Lun Tsuei ,  Lihua Li Huang ,  Martin Jay Seamons ,  Soovo Sen ,  Reza Arghavani ,  Michael Chiu Kwan

    IPC分类号： H01L21/318

    CPC分类号： C23C16/45574 ,  C23C16/345 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/50 ,  H01J37/3244 ,  H01L21/0217 ,  H01L21/3185

    摘要： A dual channel gas distributor can simultaneously distribute plasma species of an first process gas and a non-plasma second process gas into a process zone of a substrate processing chamber. The gas distributor has a localized plasma box with a first inlet to receive a first process gas, and opposing top and bottom plates that are capable of being electrically biased relative to one another to define a localized plasma zone in which a plasma of the first process gas can be formed. The top plate has a plurality of spaced apart gas spreading holes to spread the first process gas across the localized plasma zone, and the bottom plate has a plurality of first outlets to distribute plasma species of the plasma of the first process gas into the process zone. A plasma isolated gas feed has a second inlet to receive the second process gas and a plurality of second outlets to pass the second process gas into the process zone. A plasma isolator is between the second inlet and second outlets to prevent formation of a plasma of the second process gas in the plasma isolated gas feed.

    摘要翻译： 双通道气体分配器可以将第一工艺气体和非等离子体第二工艺气体的等离子体种类同时分配到衬底处理室的工艺区域中。 气体分配器具有局部等离子体箱，其具有第一入口以接收第一处理气体，以及相对的顶板和底板，其能够相对于彼此电偏置以限定局部等离子体区，其中第一工艺的等离子体 可以形成气体。 顶板具有多个间隔开的气体扩散孔，以将第一处理气体扩散通过局部等离子体区域，并且底板具有多个第一出口，用于将第一处理气体的等离子体的等离子体物质分配到处理区 。 等离子体隔离气体进料具有用于接收第二处理气体的第二入口和多个第二出口以将第二处理气体通入处理区。 等离子体隔离器位于第二入口和第二出口之间，以防止在等离子体隔离气体进料中形成第二工艺气体的等离子体。