Substrate heater assembly
    1.
    发明申请
    Substrate heater assembly 有权
    基板加热器总成

    公开(公告)号:US20050078953A1

    公开(公告)日:2005-04-14

    申请号:US10684054

    申请日:2003-10-10

    摘要: A substrate heater assembly for supporting a substrate of a predetermined standardized diameter during processing is provided. In one embodiment, the substrate heater assembly includes a body having an upper surface, a lower surface and an embedded heating element. A substrate support surface is formed in the upper surface of the body and defines a portion of a substrate receiving pocket. An annular wall is oriented perpendicular to the upper surface and has a length of at least one half a thickness of the substrate. The wall bounds an outer perimeter of the substrate receiving pocket and has a diameter less than about 0.5 mm greater than the predetermined substrate diameter.

    摘要翻译: 提供了一种用于在处理期间支撑预定标准直径的基板的基板加热器组件。 在一个实施例中,基板加热器组件包括具有上表面,下表面和嵌入式加热元件的主体。 衬底支撑表面形成在主体的上表面中并且限定衬底接收袋的一部分。 环形壁垂直于上表面定向并且具有衬底的至少一半厚度的长度。 该壁限定了基板接收槽的外周边,并具有小于预定基板直径的直径小于约0.5mm的直径。

    APPARATUS FOR REDUCING ENTRAPMENT OF FOREIGN MATTER ALONG A MOVEABLE SHAFT OF A SUBSTRATE SUPPORT
    2.
    发明申请
    APPARATUS FOR REDUCING ENTRAPMENT OF FOREIGN MATTER ALONG A MOVEABLE SHAFT OF A SUBSTRATE SUPPORT 失效
    用于减少基板支撑的可移动轴的外来物件的形成的装置

    公开(公告)号:US20080017115A1

    公开(公告)日:2008-01-24

    申请号:US11866505

    申请日:2007-10-03

    IPC分类号: C23C16/00

    CPC分类号: H01L21/67126 C23C16/4401

    摘要: In one embodiment, the invention is a guard ring for reducing particle entrapment along a moveable shaft of a substrate support. In one embodiment, the guard ring comprises a substantially annular guard ring positioned within a step formed in a sleeve that circumscribes the shaft. The guard ring is positioned to substantially seal a gap separating the shaft from the sleeve, so that the amount of particles and foreign matter that travel within or become trapped in the gap is substantially reduced. In another embodiment, a guard ring comprises a base portion having an inner perimeter and an outer perimeter, a first flange coupled to the inner perimeter, a second flange coupled to the outer perimeter, and a continuous channel separating the first flange from the second flange. The first flange is adapted to function as a spring that accommodates displacement of the shaft.

    摘要翻译: 在一个实施例中,本发明是用于减少沿基板支撑件的可移动轴的颗粒捕获的保护环。 在一个实施例中,保护环包括大致环形的保护环,其定位在形成在套筒内的步骤中,该套筒环绕轴。 保护环被定位成基本上密封将轴与套筒分开的间隙,使得在间隙内行进或被捕获在间隙中的颗粒和异物的量显着减少。 在另一个实施例中,保护环包括具有内周边和外周边的基部,连接到内周边的第一凸缘,联接到外周边的第二凸缘和将第一凸缘与第二凸缘分开的连续通道 。 第一凸缘适于用作容纳轴的位移的弹簧。

    Apparatus for reducing entrapment of foreign matter along a moveable shaft of a substrate support
    3.
    发明申请
    Apparatus for reducing entrapment of foreign matter along a moveable shaft of a substrate support 失效
    用于减少沿着衬底支撑件的可移动轴夹带异物的装置

    公开(公告)号:US20050172905A1

    公开(公告)日:2005-08-11

    申请号:US10775769

    申请日:2004-02-05

    IPC分类号: C23C16/00 C23C16/44 H01L21/00

    CPC分类号: H01L21/67126 C23C16/4401

    摘要: In one embodiment, the invention is a guard ring for reducing particle entrapment along a moveable shaft of a substrate support. In one embodiment, the guard ring comprises a substantially annular guard ring positioned within a step formed in a sleeve that circumscribes the shaft. The guard ring is positioned to substantially seal a gap separating the shaft from the sleeve, so that the amount of particles and foreign matter that travel within or become trapped in the gap is substantially reduced. In another embodiment, a guard ring comprises a base portion having an inner perimeter and an outer perimeter, a first flange coupled to the inner perimeter, a second flange coupled to the outer perimeter, and a continuous channel separating the first flange from the second flange. The first flange is adapted to function as a spring that accommodates displacement of the shaft.

    摘要翻译: 在一个实施例中,本发明是用于减少沿基板支撑件的可移动轴的颗粒捕获的保护环。 在一个实施例中,保护环包括大致环形的保护环,其定位在形成在套筒内的步骤中,该套筒环绕轴。 保护环被定位成基本上密封将轴与套筒分开的间隙,使得在间隙内行进或被捕获在间隙中的颗粒和异物的量显着减少。 在另一个实施例中,保护环包括具有内周边和外周边的基部,连接到内周边的第一凸缘,联接到外周边的第二凸缘以及将第一凸缘与第二凸缘分开的连续通道 。 第一凸缘适于用作容纳轴的位移的弹簧。

    Process kit design for deposition chamber
    4.
    发明申请
    Process kit design for deposition chamber 审中-公开
    沉积室的工艺套件设计

    公开(公告)号:US20050150452A1

    公开(公告)日:2005-07-14

    申请号:US10757021

    申请日:2004-01-14

    IPC分类号: C23C16/44 C30B25/14 C23C16/00

    CPC分类号: C23C16/4412

    摘要: The present invention provides a process kit for a semiconductor processing chamber. The processing chamber is a vacuum processing chamber that includes a chamber body defining an interior processing region. The processing region receives a substrate for processing, and also supports equipment pieces of the process kit. The process kit includes a pumping liner configured to be placed within the processing region of the processing chamber, and a C-channel liner configured to be placed along an outer diameter of the pumping liner. The pumping liner and the C-channel liner have novel interlocking features designed to inhibit parasitic pumping of processing or cleaning gases from the processing region. The invention further provides a semiconductor processing chamber having an improved process kit, such as the kit described. In one arrangement, the chamber is a tandem processing chamber.

    摘要翻译: 本发明提供了一种用于半导体处理室的处理套件。 处理室是真空处理室,其包括限定内部处理区域的室主体。 处理区域接收用于处理的基板,并且还支持处理套件的设备件。 该处理套件包括构造成放置在处理室的处理区域内的泵送衬套,以及构造成沿着泵送衬套的外径放置的C形通道衬套。 泵送衬管和C通道衬管具有新颖的互锁特征,其设计用于抑制来自处理区域的处理或清洁气体的寄生泵送。 本发明还提供了一种具有改进的处理工具的半导体处理室,例如所述的套件。 在一种布置中,室是串联处理室。

    Hardware development to reduce bevel deposition
    5.
    发明申请
    Hardware development to reduce bevel deposition 审中-公开
    硬件开发减少斜面沉积

    公开(公告)号:US20050196971A1

    公开(公告)日:2005-09-08

    申请号:US11043724

    申请日:2005-01-26

    摘要: Embodiments in accordance with the present invention relate to various techniques which may be employed alone or in combination, to reduce or eliminate the deposition of material on the bevel of a semiconductor workpiece. In one approach, a shadow ring overlies the edge of the substrate to impede the flow of gases to bevel regions. The geometric feature at the edge of the shadow ring directs the flow of gases toward the wafer in order to maintain thickness uniformity across the wafer while shadowing the edge. In another approach, a substrate heater/support is configured to flow purge gases to the edge of a substrate being supported. These purge gases prevent process gases from reaching the substrate edge and depositing material on bevel regions.

    摘要翻译: 根据本发明的实施例涉及可以单独使用或组合使用以减少或消除材料在半导体工件的斜面上的沉积的各种技术。 在一种方法中,阴影环覆盖在衬底的边缘上以阻止气体流向斜面区域。 阴影环边缘处的几何特征将气体流引导到晶片,以便在遮蔽边缘的同时保持晶片的厚度均匀性。 在另一种方法中,衬底加热器/支撑件构造成将净化气体流动到被支撑的衬底的边缘。 这些吹扫气体可防止工艺气体到达衬底边缘并将材料沉积在斜面区域上。

    Substrate heater assembly
    7.
    发明授权
    Substrate heater assembly 有权
    基板加热器总成

    公开(公告)号:US07024105B2

    公开(公告)日:2006-04-04

    申请号:US10684054

    申请日:2003-10-10

    IPC分类号: F26B19/00

    摘要: A substrate heater assembly for supporting a substrate of a predetermined standardized diameter during processing is provided. In one embodiment, the substrate heater assembly includes a body having an upper surface, a lower surface and an embedded heating element. A substrate support surface is formed in the upper surface of the body and defines a portion of a substrate receiving pocket. An annular wall is oriented perpendicular to the upper surface and has a length of at least one half a thickness of the substrate. The wall bounds an outer perimeter of the substrate receiving pocket and has a diameter less than about 0.5 mm greater than the predetermined substrate diameter.

    摘要翻译: 提供了一种用于在处理期间支撑预定标准直径的基板的基板加热器组件。 在一个实施例中,基板加热器组件包括具有上表面,下表面和嵌入式加热元件的主体。 衬底支撑表面形成在主体的上表面中并且限定衬底接收袋的一部分。 环形壁垂直于上表面定向并且具有衬底的至少一半厚度的长度。 该壁限定了基板接收槽的外周边,并具有小于预定基板直径的直径小于约0.5mm的直径。

    Universal mid-frquency matching network
    8.
    发明申请
    Universal mid-frquency matching network 失效
    通用中频匹配网络

    公开(公告)号:US20050235916A1

    公开(公告)日:2005-10-27

    申请号:US10829520

    申请日:2004-04-21

    摘要: A substrate processing system is provided with a processing chamber, an alternating voltage supply, and an impedance matching network. The processing chamber holds a substrate during processing and the alternating voltage supply is connected with the processing chamber to capacitively couple energy to a plasma formed within the processing chamber. The impedance matching network is coupled with the alternating voltage supply and has a variable resistive element and a variable reactive element, whose states respectively define distinct real and imaginary parts of an impedance.

    摘要翻译: 衬底处理系统设置有处理室,交流电压源和阻抗匹配网络。 处理室在处理期间保持基板,并且交流电压供应与处理室连接以将能量电容耦合到处理室内形成的等离子体。 阻抗匹配网络与交流电源耦合,并具有可变电阻元件和可变无功元件,其状态分别定义阻抗的不同实部和虚部。