Leak detector for a pressurized cylinder
    1.
    发明授权
    Leak detector for a pressurized cylinder 有权
    泄漏检测器用于加压缸

    公开(公告)号:US07716964B2

    公开(公告)日:2010-05-18

    申请号:US11650686

    申请日:2007-01-08

    IPC分类号: G01M3/26 G01M3/34

    CPC分类号: G01M3/3236 B64C25/60

    摘要: A leak detector apparatus for a pressurized cylinder having a cylinder of a radius (r) with a slidable piston in the cylinder with a gas filled chamber positioned between a cylinder end and the piston face. The length (L) of the chamber is calculated according to load changes on the piston where the volume (Vc) of the chamber changes. The pressure and temperature of the chamber are measured as well as the length. These values are inputted to a processor to solve the ideal gas law equation PV=nRT where a change in n for a change in length indicates a leak.

    摘要翻译: 一种用于加压缸的泄漏检测装置,其具有半径(r)的圆柱体,其中气缸中的可滑动活塞具有位于气缸端部和活塞面之间的充气室。 腔室的长度(L)根据腔室体积(Vc)改变的活塞上的负载变化计算。 测量室的压力和温度以及长度。 这些值被输入到处理器以求解理想气体定律方程PV = nRT,其中长度变化的n中的变化表示泄漏。

    Leak detector for a pressurized cylinder
    2.
    发明申请
    Leak detector for a pressurized cylinder 有权
    泄漏检测器用于加压缸

    公开(公告)号:US20080163668A1

    公开(公告)日:2008-07-10

    申请号:US11650686

    申请日:2007-01-08

    IPC分类号: G01M3/26 G01M3/34

    CPC分类号: G01M3/3236 B64C25/60

    摘要: A leak detector apparatus for a pressurized cylinder having a cylinder of a radius (r) with a slidable piston in the cylinder with a gas filled chamber positioned between a cylinder end and the piston face. The length (L) of the chamber is calculated according to load changes on the piston where the volume (Vc) of the chamber changes. The pressure and temperature of the chamber are measured as well as the length. These values are inputted to a processor to solve the ideal gas law equation PV=nRT where a change in n for a change in length indicates a leak.

    摘要翻译: 一种用于加压缸的泄漏检测装置,其具有半径(r)的圆柱体,其中气缸中的可滑动活塞具有位于气缸端部和活塞面之间的充气室。 腔室的长度(L)根据腔室体积(V SUB)的活塞的负荷变化而变化。 测量室的压力和温度以及长度。 这些值被输入到处理器以求解理想气体定律方程PV = nRT,其中长度变化的n中的变化表示泄漏。

    Method for temperature compensation of a piezoresistive gaged metal diaphragm
    3.
    发明申请
    Method for temperature compensation of a piezoresistive gaged metal diaphragm 有权
    压阻式金属膜片的温度补偿方法

    公开(公告)号:US20100199775A1

    公开(公告)日:2010-08-12

    申请号:US12322817

    申请日:2009-02-06

    IPC分类号: G01L19/04 H01C10/10

    CPC分类号: G01L9/065

    摘要: There is described a temperature compensation scheme for a pressure sensitive metal diaphragm transducer. The transducer employs a Wheatstone bridge fabricated from p-type piezoresistors. The Wheatstone bridge is glassed directly onto the metal diaphragm. As the temperature of operation increases, the diaphragm exhibits a temperature variation of the Modulus of Elasticity. The Modulus of the metal diaphragm decreases with increasing temperature. Because of this, the same pressure applied to the metal diaphragm causes it to deflect further, which in turns causes increased strain applied to the bridge. Because of this effect, the sensitivity of the transducer increases with increasing temperature. A resistor is now placed in series with the Wheatstone bridge. The resistor is in series with the biasing voltage and because the TCS of the diaphragm is of an opposite sign, the series resistor has an even higher TCR in series with the bridge. In this manner, the bridge voltage is made to decrease with increasing temperature. Due to the fact that the bridge voltage decreases with increasing temperature the change in voltage compensates for the change in the Modulus of the metal diaphragm and therefore provides an accurate output at all temperatures.

    摘要翻译: 描述了压敏金属隔膜换能器的温度补偿方案。 传感器采用由p型压阻电阻制造的惠斯通电桥。 惠斯通电桥直接在金属隔膜上玻璃化。 随着操作温度的升高,隔膜呈现弹性模量的温度变化。 金属隔膜的模量随着温度的升高而降低。 因此,施加到金属隔膜上的相同的压力导致其进一步偏转,这又导致施加到桥的应变增加。 由于这种影响,传感器的灵敏度随着温度的升高而增加。 电阻器现在与惠斯通电桥串联放置。 电阻与偏置电压串联,并且由于隔膜的TCS具有相反的符号,所以串联电阻具有与桥连接的更高的TCR。 以这种方式,使电桥电压随着温度的升高而降低。 由于桥接电压随着温度升高而降低,所以电压的变化补偿了金属隔膜的模量的变化,因此在所有的温度下提供了精确的输出。

    Method and apparatus for measuring knocking in internal combustion engines
    4.
    发明授权
    Method and apparatus for measuring knocking in internal combustion engines 失效
    用于测量内燃机爆震的方法和装置

    公开(公告)号:US07448254B2

    公开(公告)日:2008-11-11

    申请号:US11353418

    申请日:2006-02-14

    IPC分类号: G01L23/22

    CPC分类号: G01L23/221

    摘要: A method and apparatus for measuring knocking in internal combustion engines employs a high temperature transducer, which transducer is mounted within a cylinder. The output of the transducer is solely related to pressure. The output signal from the transducer is directed to the input of a high frequency amplifier associated with a band pass filter. In this manner the combustion signal can be filtered out and one provides a signal which is only indicative of the knocking signal and of the knocking frequencies. This signal can be analyzed simply and effectively by the use of a processor such as a multimeter or a microprocessor. In a similar manner the processor can compare the combustion and knocking signal without the band pass filtering with the knocking signal with the combustion signal filtered out.

    摘要翻译: 用于测量内燃机中的爆震的方法和装置采用高温换能器,该换能器安装在汽缸内。 传感器的输出仅与压力有关。 来自传感器的输出信号被引导到与带通滤波器相关联的高频放大器的输入。 以这种方式,燃烧信号可以被滤出,并且一个提供仅指示爆震信号和爆震频率的信号。 可以通过使用诸如万用表或微处理器的处理器简单有效地分析该信号。 以类似的方式,处理器可以比较燃烧和爆震信号,而不用带有过滤掉燃烧信号的爆震信号的带通滤波。

    Apparatus for providing an output proportional to pressure divided by temperature (P/T)
    5.
    发明授权
    Apparatus for providing an output proportional to pressure divided by temperature (P/T) 失效
    用于提供与压力除以温度(P / T)成正比的输出的装置

    公开(公告)号:US07347098B2

    公开(公告)日:2008-03-25

    申请号:US11431167

    申请日:2006-05-09

    IPC分类号: G01L7/00

    CPC分类号: G01M3/3236 G01L9/06

    摘要: A circuit produces an output that is proportional to the molar density of gas in a chamber. The circuit employs an operational amplifier which measures the temperature using a RTD or other element that changes resistance with temperature. The RTD is placed such that it produces a decreasing current draw at the inverting input of the operational amplifier as the temperature increases. This decreasing current draw in turn produces a decreasing voltage at the output of the operational amplifier. By changing the ratio of resistors connected to the non-inverting terminal of the operational amplifier one changes the offset of the output voltage. By changing the feedback resistor connected from the output of the operational amplifier to the inverting terminal and connecting the output of the inverting terminal to a voltage divider including the RTD device, one can change the gain with temperature. Thus the output voltage of the operational amplifier is carefully controlled to be proportional to 1/T for many different temperature scales and ranges. The output of the amplifier serves as the biasing voltage for a pressure transducer.

    摘要翻译: 电路产生与腔室中气体的摩尔密度成比例的输出。 该电路采用运算放大器,其使用RTD或其他随温度变化的元件来测量温度。 放置RTD使得它在温度升高时在运算放大器的反相输入端产生降低的电流消耗。 这种减小的电流消耗又在运算放大器的输出端产生降低的电压。 通过改变连接到运算放大器的同相端的电阻的比例,可以改变输出电压的偏移。 通过将从运算放大器的输出端连接的反馈电阻改变为反相端子,并将反相端子的输出端连接到包括RTD器件的分压器,可以随温度改变增益。 因此,对于许多不同的温度范围和范围,运算放大器的输出电压被小心地控制成与1 / T成比例。 放大器的输出用作压力传感器的偏置电压。

    Leadless alignment of a semiconductor chip
    6.
    发明授权
    Leadless alignment of a semiconductor chip 失效
    半导体芯片的无引线对准

    公开(公告)号:US08013453B2

    公开(公告)日:2011-09-06

    申请号:US12004638

    申请日:2007-12-22

    IPC分类号: H01L23/52 H01L21/00

    摘要: There is disclosed a mounting technique for mounting a semiconductor chip of the leadless or so-called flip chip type to a header. The header has an insert made of glass or other suitable non-conductive material within the header hollow. Mounted into the glass insert are a series of conductive metal pins which are placed in areas so that when a chip is mounted in the header, the chip makes contact with these conductive pins and allows one to make outside connections. Also positioned in the header are a series of nonconductive guide pins. These pins are placed in suitable positions in the header to enable one to contact the outside surfaces of the chip when the chip is placed in the header. In this manner, the chip is constrained from movement from side to side or from rotation. However, due to the positioning of the nonconductive pins within the header, it is possible to move the chip up and down while mounting.

    摘要翻译: 公开了一种用于将无引线或所谓的倒装芯片类型的半导体芯片安装到集管上的安装技术。 集管具有由玻璃或其他合适的非导电材料制成的插入件在集管空腔内。 安装在玻璃插入件中的是一系列导电金属销,它们放置在区域中,使得当芯片安装在集管中时,芯片与这些导电引脚接触并允许外部连接。 还设置在集管中的是一系列不导电的导向销。 这些引脚放置在插头中的适当位置,以便当芯片放置在插头中时,可使它们接触芯片的外表面。 以这种方式,芯片被限制为从一侧移动到另一侧或从旋转移动。 然而,由于不导电销在集管内的定位,可以在安装时上下移动芯片。

    High temperature,high bandwidth pressure acquisition system
    7.
    发明申请
    High temperature,high bandwidth pressure acquisition system 有权
    高温,高带宽压力采集系统

    公开(公告)号:US20100185403A1

    公开(公告)日:2010-07-22

    申请号:US12321521

    申请日:2009-01-22

    IPC分类号: G01L9/06 G01M9/02

    摘要: A system for measuring a multiplicity of pressures as those experienced by a model in a wind tunnel is depicted. The system includes individual sensor devices which are connected to an Acquisition and Compensation electronics module. The individual sensor or transducer devices are semiconductor piezoresistive devices and are connected to the Acquisition and Compensation electronics module by means of a cable in a first embodiment. In an alternate embodiment the system uses connectors which connect each of the individual sensor devices to the Acquisition and Compensation electronics module via a mating connector located therein. The connectors may also include a memory which stores compensation coefficients associated with each of the various sensor devices. In this manner as described, the transducers which are small devices are connected via electrical lines or cables to the central Acquisition and Compensation electronics modules. This module houses electronics which digitally converts the data from the sensors and then compensates the data for temperature effects. The advantage of the system is that each individual sensor does not have any compensation and it can be made very small to operate at very high temperatures without any loss of accuracy. Thus, a large number of sensors can be utilized in a very small volume, even under extreme environmental conditions. It is noted that the Acquisition and Compensation electronics module can be located remotely in a safe environment outside of the wind tunnel and therefore respond extremely accurately to the pressure and temperatures subjected by the model in the wind tunnel.

    摘要翻译: 描绘了一种用于测量如风洞中的模型所经历的多种压力的系统。 该系统包括连接到采集和补偿电子模块的各个传感器设备。 单独的传感器或换能器装置是半导体压阻器件,并且在第一实施例中通过电缆连接到采集和补偿电子模块。 在替代实施例中,系统使用通过位于其中的匹配连接器将各个传感器设备中的每一个连接到采集和补偿电子模块的连接器。 连接器还可以包括存储器,其存储与各种传感器装置中的每一个相关联的补偿系数。 以这种方式,小型设备的换能器通过电线或电缆连接到中央采集和补偿电子模块。 该模块内置电子设备,数字转换传感器的数据,然后补偿温度影响的数据。 该系统的优点是每个传感器不具有任何补偿,并且可以使其非常小以在非常高的温度下工作,而不会有任何的精度损失。 因此,即使在极端的环境条件下,也可以以非常小的体积使用大量的传感器。 需要注意的是,采集和补偿电子模块可以远程位于风洞外的安全环境中,因此对风洞中模型所承受的压力和温度非常准确地做出反应。

    Leadless alignment of a semiconductor chip
    8.
    发明申请
    Leadless alignment of a semiconductor chip 失效
    半导体芯片的无引线对准

    公开(公告)号:US20090160069A1

    公开(公告)日:2009-06-25

    申请号:US12004638

    申请日:2007-12-22

    IPC分类号: H01L23/52 H01L21/00

    摘要: There is disclosed a mounting technique for mounting a semiconductor chip of the leadless or so-called flip chip type to a header. The header has an insert made of glass or other suitable non-conductive material within the header hollow. Mounted into the glass insert are a series of conductive metal pins which are placed in areas so that when a chip is mounted in the header, the chip makes contact with these conductive pins and allows one to make outside connections. Also positioned in the header are a series of nonconductive guide pins. These pins are placed in suitable positions in the header to enable one to contact the outside surfaces of the chip when the chip is placed in the header. In this manner, the chip is constrained from movement from side to side or from rotation. However, due to the positioning of the nonconductive pins within the header, it is possible to move the chip up and down while mounting.

    摘要翻译: 公开了一种用于将无引线或所谓的倒装芯片类型的半导体芯片安装到集管上的安装技术。 集管具有由玻璃或其他合适的非导电材料制成的插入件在集管空腔内。 安装在玻璃插入件中的是一系列导电金属销,它们放置在区域中,使得当芯片安装在集管中时,芯片与这些导电引脚接触并允许外部连接。 还设置在集管中的是一系列不导电的导向销。 这些引脚放置在插头中的适当位置,以便当芯片放置在插头中时,可使它们接触芯片的外表面。 以这种方式,芯片被限制为从一侧移动到另一侧或从旋转移动。 然而,由于不导电销在集管内的定位,可以在安装时上下移动芯片。

    Pressure switch employing silicon on insulator (SOI) technology
    9.
    发明申请
    Pressure switch employing silicon on insulator (SOI) technology 有权
    采用绝缘体绝缘体(SOI)技术的压力开关

    公开(公告)号:US20090078547A1

    公开(公告)日:2009-03-26

    申请号:US11903450

    申请日:2007-09-21

    IPC分类号: H01H35/24 H01H35/34

    摘要: A pressure switch employs semiconductor silicon on insulator (SOI) technology and utilizes a first silicon wafer which has a deflecting diaphragm. Deposited on the wafer is at least one distinct metal contact. Secured to the semiconductor wafer is a glass wafer having a central aperture defining a deflecting region. Positioned on top of the glass wafer is another metal contact which is positioned to receive the two contacts deposited on the silicon wafer when a given pressure is applied to the silicon wafer. The metal contact on the silicon wafer is connected to a header pin, via apertures formed in the glass wafer, the apertures are filled with a conductive glass metal frit so that contact is made between the header pins and the metal contacts deposited on the silicon wafer. Operation is such that when a pressure is applied of a given magnitude the contact on the silicon wafer will contact the metal contact trace on the glass wafer and therefore a connection would be made between the first metal trace and the second metal trace to create a low impedance path between the two traces thereby connecting the first trace on the silicon wafer to the second trace on the glass wafer. This creates a high impedance or open circuit in a first state and when the pressure exceeds the threshold a slow impedance or short circuit in a second state.

    摘要翻译: 压力开关采用半导体绝缘体(SOI)技术,并利用具有偏转膜片的第一硅晶片。 沉积在晶片上的是至少一种不同的金属接触。 安装到半导体晶片的是具有限定偏转区域的中心孔的玻璃晶片。 位于玻璃晶片顶部的另一个金属接触件被定位成当向硅晶片施加给定的压力时接收沉积在硅晶片上的两个触点。 硅晶片上的金属接触通过形成在玻璃晶片中的孔连接到集管引脚,孔被导电玻璃金属玻璃料填充,使得在集管引脚和沉积在硅晶片上的金属触点之间形成接触 。 操作使得当施加给定幅度的压力时,硅晶片上的接触将接触玻璃晶片上的金属接触迹线,因此将在第一金属迹线和第二金属迹线之间形成连接以产生低 两个迹线之间的阻抗路径,从而将硅晶片上的第一迹线连接到玻璃晶片上的第二迹线。 这在第一状态下产生高阻抗或开路,并且当压力超过阈值时,在第二状态下产生缓慢的阻抗或短路。

    Method for temperature compensation of a piezoresistive gaged metal diaphragm
    10.
    发明授权
    Method for temperature compensation of a piezoresistive gaged metal diaphragm 有权
    压阻式金属膜片的温度补偿方法

    公开(公告)号:US07918137B2

    公开(公告)日:2011-04-05

    申请号:US12322817

    申请日:2009-02-06

    IPC分类号: G01L9/06

    CPC分类号: G01L9/065

    摘要: There is described a temperature compensation scheme for a pressure sensitive metal diaphragm transducer. The transducer employs a Wheatstone bridge fabricated from p-type piezoresistors. The Wheatstone bridge is glassed directly onto the metal diaphragm. As the temperature of operation increases, the diaphragm exhibits a temperature variation of the Modulus of Elasticity. The Modulus of the metal diaphragm decreases with increasing temperature. Because of this, the same pressure applied to the metal diaphragm causes it to deflect further, which in turns causes increased strain applied to the bridge. Because of this effect, the sensitivity of the transducer increases with increasing temperature. A resistor is now placed in series with the Wheatstone bridge. The resistor is in series with the biasing voltage and because the TCS of the diaphragm is of an opposite sign, the series resistor has an even higher TCR in series with the bridge. In this manner, the bridge voltage is made to decrease with increasing temperature. Due to the fact that the bridge voltage decreases with increasing temperature the change in voltage compensates for the change in the Modulus of the metal diaphragm and therefore provides an accurate output at all temperatures.

    摘要翻译: 描述了压敏金属隔膜换能器的温度补偿方案。 传感器采用由p型压阻电阻制造的惠斯通电桥。 惠斯通电桥直接在金属隔膜上玻璃化。 随着操作温度的升高,隔膜呈现弹性模量的温度变化。 金属隔膜的模量随着温度的升高而降低。 因此,施加到金属隔膜上的相同的压力导致其进一步偏转,这又导致施加到桥的应变增加。 由于这种影响,传感器的灵敏度随着温度的升高而增加。 电阻器现在与惠斯通电桥串联放置。 电阻与偏置电压串联,并且由于隔膜的TCS具有相反的符号,所以串联电阻具有与桥连接的更高的TCR。 以这种方式,使电桥电压随着温度的升高而降低。 由于桥接电压随着温度升高而降低,所以电压的变化补偿了金属隔膜的模量的变化,因此在所有的温度下提供了精确的输出。