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    Buried-channel devices and substrates for fabrication of semiconductor-based devices
    2.
    发明授权
    Buried-channel devices and substrates for fabrication of semiconductor-based devices 有权
    用于制造基于半导体的器件的掩埋沟道器件和衬底

    公开(公告)号：US06838728B2

    公开(公告)日：2005-01-04

    申请号：US10216091

    申请日：2002-08-09

    申请人： Anthony J. Lochtefeld ,  Eugene A. Fitzgerald

    发明人： Anthony J. Lochtefeld ,  Eugene A. Fitzgerald

    IPC分类号： H01L21/337 ,  H01L29/10 ,  H01L29/165 ,  H01L29/80 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

    CPC分类号： H01L29/66916 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/802 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Semiconductor-based devices, and methods for making the devices, involve a first device that includes a buried channel layer, a dielectric layer, and a compositionally graded spacer layer. The spacer layer includes a first material and a second material, and is located between the buried channel layer and the dielectric layer. A second device includes a buried channel layer, a relaxed surface layer, and a spacer layer located between the buried channel layer and the relaxed surface layer. The spacer layer has a composition that is different from a composition of the relaxed layer. The spacer layer and the relaxed surface layer each have bandgap offsets relative to the buried channel layer to reduce a parasitic channel conduction. A substrate for fabrication of devices, and methods for making the substrate, involves a substrate that includes a first layer, such as a silicon wafer, a substantially uniform second layer, and a graded-composition third layer.

    摘要翻译： 基于半导体的器件以及用于制造器件的方法包括第一器件，其包括掩埋沟道层，电介质层和组成分级的间隔层。 间隔层包括第一材料和第二材料，并且位于掩埋沟道层和介电层之间。 第二装置包括掩埋沟道层，松弛表面层和位于掩埋沟道层和松弛表面层之间的间隔层。 间隔层具有与松弛层的组成不同的组成。 间隔层和松弛表面层各自相对于掩埋沟道层具有带隙偏移，以减少寄生沟道传导。 用于制造器件的衬底以及用于制造衬底的方法包括：衬底，其包括第一层，例如硅晶片，基本均匀的第二层和渐变组成的第三层。

    Methods of fabricating semiconductor devices having strained dual channel layers
    6.
    发明授权
    Methods of fabricating semiconductor devices having strained dual channel layers 有权
    制造具有应变双通道层的半导体器件的方法

    公开(公告)号：US07566606B2

    公开(公告)日：2009-07-28

    申请号：US11544245

    申请日：2006-10-06

    申请人： Matthew T. Currie ,  Anthony J. Lochtefeld ,  Christopher W. Leitz ,  Eugene A. Fitzgerald

    发明人： Matthew T. Currie ,  Anthony J. Lochtefeld ,  Christopher W. Leitz ,  Eugene A. Fitzgerald

    IPC分类号： H01L21/00

    CPC分类号： H01L29/66545 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/1054 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/66651 ,  H01L29/66916 ,  H01L29/802 ,  Y10S438/938

    摘要： A semiconductor structure includes a strain-inducing substrate layer having a germanium concentration of at least 10 atomic %. The semiconductor structure also includes a compressively strained layer on the strain-inducing substrate layer. The compressively strained layer has a germanium concentration at least approximately 30 percentage points greater than the germanium concentration of the strain-inducing substrate layer, and has a thickness less than its critical thickness. The semiconductor structure also includes a tensilely strained layer on the compressively strained layer. The tensilely strained layer may be formed from silicon having a thickness less than its critical thickness. A method for fabricating a semiconductor structure includes providing a substrate, providing a compressively strained semiconductor on the substrate, depositing a tensilely strained semiconductor adjacent the substrate until a thickness of a first region of the tensilely strained semiconductor is greater than a thickness of a second region of the tensilely strained semiconductor, forming a n-channel device on the first region, and forming a p-channel device on the second region.

    摘要翻译： 半导体结构包括锗浓度为至少10原子％的应变诱导基底层。 半导体结构还包括在应变诱导基底层上的压缩应变层。 压缩应变层的锗浓度比应变诱导基底层的锗浓度大至少约30个百分点，并且具有小于其临界厚度的厚度。 半导体结构还包括在压缩应变层上的拉伸应变层。 拉伸应变层可以由厚度小于其临界厚度的硅形成。 一种用于制造半导体结构的方法包括：提供衬底，在衬底上提供压缩应变半导体，在衬底附近沉积拉伸应变半导体，直到拉伸应变半导体的第一区域的厚度大于第二区域的厚度 的拉伸应变半导体，在第一区域上形成n沟道器件，并在第二区域上形成p沟道器件。