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公开(公告)号：US07776697B2
公开(公告)日：2010-08-17
申请号：US11847721
申请日：2007-08-30
IPC分类号： H01L21/00
CPC分类号： H01L29/1054 , H01L29/105 , H01L29/161 , H01L29/36 , H01L29/66477 , H01L29/66545 , H01L29/66651 , H01L29/78 , H01L29/7842 , Y10S438/926
摘要： Semiconductor structures and devices including strained material layers having impurity-free zones, and methods for fabricating same. Certain regions of the strained material layers are kept free of impurities that can interdiffuse from adjacent portions of the semiconductor. When impurities are present in certain regions of the strained material layers, there is degradation in device performance. By employing semiconductor structures and devices (e.g., field effect transistors or “FETs”) that have the features described, or are fabricated in accordance with the steps described, device operation is enhanced.
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公开(公告)号：US08586452B2
公开(公告)日：2013-11-19
申请号：US13227077
申请日：2011-09-07
申请人： Anthony J. Lochtefeld , Thomas A. Langdo , Richard Hammond , Matthew T. Currie , Eugene A. Fitzgerald
发明人： Anthony J. Lochtefeld , Thomas A. Langdo , Richard Hammond , Matthew T. Currie , Eugene A. Fitzgerald
IPC分类号： H01L21/36
CPC分类号： H01L29/7847 , H01L21/28518 , H01L21/76254 , H01L21/76256 , H01L21/76259 , H01L21/76264 , H01L21/76275 , H01L21/84 , H01L27/1203 , H01L29/0649 , H01L29/1033 , H01L29/165 , H01L29/41783 , H01L29/66242 , H01L29/66628 , H01L29/66772 , H01L29/66787 , H01L29/66916 , H01L29/7842 , H01L29/7843 , H01L29/7849 , H01L29/785 , H01L29/78603 , H01L29/78684 , H01L29/78687
摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
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公开(公告)号：US20110318893A1
公开(公告)日：2011-12-29
申请号：US13227077
申请日：2011-09-07
申请人： Anthony J. Lochtefeld , Thomas A. Langdo , Richard Hammond , Matthew T. Currie , Eugene A. Fitzgerald
发明人： Anthony J. Lochtefeld , Thomas A. Langdo , Richard Hammond , Matthew T. Currie , Eugene A. Fitzgerald
IPC分类号： H01L21/336 , H01L21/265 , H01L21/20
CPC分类号： H01L29/7847 , H01L21/28518 , H01L21/76254 , H01L21/76256 , H01L21/76259 , H01L21/76264 , H01L21/76275 , H01L21/84 , H01L27/1203 , H01L29/0649 , H01L29/1033 , H01L29/165 , H01L29/41783 , H01L29/66242 , H01L29/66628 , H01L29/66772 , H01L29/66787 , H01L29/66916 , H01L29/7842 , H01L29/7843 , H01L29/7849 , H01L29/785 , H01L29/78603 , H01L29/78684 , H01L29/78687
摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
摘要翻译： 应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。
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公开(公告)号：US20110073908A1
公开(公告)日：2011-03-31
申请号：US12907787
申请日：2010-10-19
申请人： Anthony J. Lochtefeld , Thomas A. Langdo , Richard Hammond , Matthew T. Currie , Eugene A. Fitzgerald
发明人： Anthony J. Lochtefeld , Thomas A. Langdo , Richard Hammond , Matthew T. Currie , Eugene A. Fitzgerald
IPC分类号： H01L29/20
CPC分类号： H01L29/7847 , H01L21/28518 , H01L21/76254 , H01L21/76256 , H01L21/76259 , H01L21/76264 , H01L21/76275 , H01L21/84 , H01L27/1203 , H01L29/0649 , H01L29/1033 , H01L29/165 , H01L29/41783 , H01L29/66242 , H01L29/66628 , H01L29/66772 , H01L29/66787 , H01L29/66916 , H01L29/7842 , H01L29/7843 , H01L29/7849 , H01L29/785 , H01L29/78603 , H01L29/78684 , H01L29/78687
摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
摘要翻译： 应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。
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5.发明授权公开(公告)号：US08748292B2
公开(公告)日：2014-06-10
申请号：US11073780
申请日：2005-03-07
申请人： Thomas A. Langdo , Matthew T. Currie , Richard Hammond , Anthony J. Lochtefeld , Eugene A. Fitzgerald
发明人： Thomas A. Langdo , Matthew T. Currie , Richard Hammond , Anthony J. Lochtefeld , Eugene A. Fitzgerald
IPC分类号： H01L21/30 , H01L29/06 , H01L21/762 , H01L29/786 , H01L29/66 , H01L27/12 , H01L29/78 , H01L21/84 , H01L21/02
CPC分类号： H01L21/76254 , H01L21/02381 , H01L21/0245 , H01L21/02502 , H01L21/02505 , H01L21/0251 , H01L21/02521 , H01L21/02532 , H01L21/76259 , H01L21/76264 , H01L21/76275 , H01L21/84 , H01L27/1203 , H01L29/66772 , H01L29/66916 , H01L29/7842 , H01L29/78603 , H01L29/78684 , H01L29/78687
摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
摘要翻译： 应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。
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公开(公告)号：US08026534B2
公开(公告)日：2011-09-27
申请号：US12907787
申请日：2010-10-19
申请人： Thomas A. Langdo , Matthew T. Currie , Richard Hammond , Anthony J. Lochtefeld , Eugene A. Fitzgerald
发明人： Thomas A. Langdo , Matthew T. Currie , Richard Hammond , Anthony J. Lochtefeld , Eugene A. Fitzgerald
IPC分类号： H01L31/102
CPC分类号： H01L29/7847 , H01L21/28518 , H01L21/76254 , H01L21/76256 , H01L21/76259 , H01L21/76264 , H01L21/76275 , H01L21/84 , H01L27/1203 , H01L29/0649 , H01L29/1033 , H01L29/165 , H01L29/41783 , H01L29/66242 , H01L29/66628 , H01L29/66772 , H01L29/66787 , H01L29/66916 , H01L29/7842 , H01L29/7843 , H01L29/7849 , H01L29/785 , H01L29/78603 , H01L29/78684 , H01L29/78687
摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
摘要翻译： 应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。
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公开(公告)号：US20080128751A1
公开(公告)日：2008-06-05
申请号：US11943188
申请日：2007-11-20
申请人： Thomas A. Langdo , Matthew T. Currie , Richard Hammond , Anthony J. Lochtefeld , Eugene A. Fitzgerald
发明人： Thomas A. Langdo , Matthew T. Currie , Richard Hammond , Anthony J. Lochtefeld , Eugene A. Fitzgerald
CPC分类号： H01L29/7847 , H01L21/28518 , H01L21/76254 , H01L21/76256 , H01L21/76259 , H01L21/76264 , H01L21/76275 , H01L21/84 , H01L27/1203 , H01L29/0649 , H01L29/1033 , H01L29/165 , H01L29/41783 , H01L29/66242 , H01L29/66628 , H01L29/66772 , H01L29/66787 , H01L29/66916 , H01L29/7842 , H01L29/7843 , H01L29/7849 , H01L29/785 , H01L29/78603 , H01L29/78684 , H01L29/78687
摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
摘要翻译： 应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。
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8.发明授权Methods for forming strained-semiconductor-on-insulator device structures by use of cleave planes 有权通过使用分裂面形成绝缘体上半导体器件结构的方法公开(公告)号：US07297612B2
公开(公告)日：2007-11-20
申请号：US11127508
申请日：2005-05-12
申请人： Thomas A. Langdo , Matthew T. Currie , Richard Hammond , Anthony J. Lochtefeld , Eugene A. Fitzgerald
发明人： Thomas A. Langdo , Matthew T. Currie , Richard Hammond , Anthony J. Lochtefeld , Eugene A. Fitzgerald
IPC分类号： H01L21/30
CPC分类号： H01L29/7847 , H01L21/28518 , H01L21/76254 , H01L21/76256 , H01L21/76259 , H01L21/76264 , H01L21/76275 , H01L21/84 , H01L27/1203 , H01L29/0649 , H01L29/1033 , H01L29/165 , H01L29/41783 , H01L29/66242 , H01L29/66628 , H01L29/66772 , H01L29/66787 , H01L29/66916 , H01L29/7842 , H01L29/7843 , H01L29/7849 , H01L29/785 , H01L29/78603 , H01L29/78684 , H01L29/78687
摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
摘要翻译： 应变半导体的优点与基板和器件制造上的绝缘体硅法相结合。
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公开(公告)号：US07109516B2
公开(公告)日：2006-09-19
申请号：US11211933
申请日：2005-08-25
申请人： Thomas A. Langdo , Matthew T. Currie , Glyn Braithwaite , Richard Hammond , Anthony J. Lochtefeld , Eugene A. Fitzgerald
发明人： Thomas A. Langdo , Matthew T. Currie , Glyn Braithwaite , Richard Hammond , Anthony J. Lochtefeld , Eugene A. Fitzgerald
IPC分类号： H01L31/0328 , H01L29/745 , H01L27/148 , H01L29/80 , H01L21/332 , H01L21/00
CPC分类号： H01L29/785 , H01L21/76254 , H01L21/76259 , H01L21/76264 , H01L21/76275 , H01L21/84 , H01L27/1203 , H01L29/66772 , H01L29/66795 , H01L29/66916 , H01L29/7842 , H01L29/78603 , H01L29/78684 , H01L29/78687
摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
摘要翻译： 应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。
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10.发明授权Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same 有权使用具有限定杂质梯度的应变材料层的半导体结构及其制造方法公开(公告)号：US08344355B2
公开(公告)日：2013-01-01
申请号：US13327194
申请日：2011-12-15
IPC分类号： H01L29/06
CPC分类号： H01L29/1054 , H01L29/105 , H01L29/161 , H01L29/36 , H01L29/66477 , H01L29/66545 , H01L29/66651 , H01L29/78 , H01L29/7842 , Y10S438/926
摘要： Semiconductor structures and devices including strained material layers having impurity-free zones, and methods for fabricating same. Certain regions of the strained material layers are kept free of impurities that can interdiffuse from adjacent portions of the semiconductor. When impurities are present in certain regions of the strained material layers, there is degradation in device performance. By employing semiconductor structures and devices (e.g., field effect transistors or “FETs”) that have the features described, or are fabricated in accordance with the steps described, device operation is enhanced.
摘要翻译： 包括具有无杂质区域的应变材料层的半导体结构和器件及其制造方法。 应变材料层的某些区域保持没有可以从半导体的相邻部分相互扩散的杂质。 当杂质存在于应变材料层的某些区域中时，器件性能下降。 通过采用具有所描述或者根据所述步骤制造的特征的半导体结构和器件（例如，场效应晶体管或FET），器件操作被增强。
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