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    Technique for providing a segmented electrostatic lens in an ion implanter
    3.
    发明申请
    Technique for providing a segmented electrostatic lens in an ion implanter 有权
    在离子注入机中提供分段静电透镜的技术

    公开(公告)号：US20070164229A1

    公开(公告)日：2007-07-19

    申请号：US11413570

    申请日：2006-04-28

    申请人： Svetlana Radovanov ,  Anthony Renau ,  James Buff

    发明人： Svetlana Radovanov ,  Anthony Renau ,  James Buff

    IPC分类号： H01J3/14

    CPC分类号： H01J37/12 ,  H01J37/3171

    摘要： A technique for providing a segmented electrostatic lens in an ion implanter is disclosed. In one particular exemplary embodiment, the technique may be realized as an electrostatic lens for use in an ion implanter. The lens may comprise an entrance electrode biased at a first voltage potential, wherein an ion beam enters the electrostatic lens through the entrance electrode. The lens may also comprise an exit electrode biased at a second voltage potential, wherein the ion beam exits the electrostatic lens through the exit electrode. The lens may further comprise a suppression electrode located between the entrance electrode and the exit electrode, the suppression electrode comprising a plurality of segments that are independently biased to manipulate an energy and a shape of the ion beam.

    摘要翻译： 公开了一种在离子注入机中提供分段静电透镜的技术。 在一个特定的示例性实施例中，该技术可以被实现为用于离子注入机的静电透镜。 透镜可以包括偏置在第一电压电位的入口电极，其中离子束通过入口电极进入静电透镜。 透镜还可以包括偏压在第二电压电位的出射电极，其中离子束通过出射电极离开静电透镜。 透镜还可以包括位于入射电极和出射电极之间的抑制电极，所述抑制电极包括多个段，所述多个段被独立地偏置以操纵离子束的能量和形状。

    Electron confinement inside magnet of ion implanter
    4.
    发明授权
    Electron confinement inside magnet of ion implanter 有权
    离子注入机磁体内的电子约束

    公开(公告)号：US07459692B2

    公开(公告)日：2008-12-02

    申请号：US11272193

    申请日：2005-11-10

    申请人： Anthony Renau ,  Joseph C. Olson ,  Shengwu Chang ,  James Buff

    发明人： Anthony Renau ,  Joseph C. Olson ,  Shengwu Chang ,  James Buff

    IPC分类号： H01J1/50

    CPC分类号： H01J37/1475 ,  H01J37/026 ,  H01J37/3171 ,  H01J2237/0041 ,  H01J2237/0042 ,  H01J2237/055

    摘要： A method and apparatus are disclosed for improving space charge neutralization adjacent a magnet of an ion implanter by confining the electrons inside a magnetic region thereof to reduce electron losses and therefore improve the transport efficiency of a low energy beam. A magnetic pole member for a magnet of an ion implanter is provided that includes an outer surface having a plurality of magnetic field concentration members that form magnetic field concentrations adjacent the magnetic pole member. Electrons that encounter this increased magnetic field are repelled back along the same magnetic field line rather than allowed to escape. An analyzer magnet and ion implanter including the magnet pole are also provided so that a method of improving low energy ion beam space charge neutralization in an ion implanter is realized.

    摘要翻译： 公开了一种用于通过将电子限制在其磁性区域内以减少电子损失并因此提高低能量束的传输效率来改进邻近离子注入机的磁体的空间电荷中和的方法和装置。 提供了一种用于离子注入机的磁体的磁极构件，其包括具有与磁极构件相邻形成磁场浓度的多个磁场浓度构件的外表面。 遇到这种增加的磁场的电子沿着相同的磁场线被击退，而不是允许逃逸。 还提供了包括磁极的分析器磁体和离子注入机，从而实现了在离子注入机中提高低能量离子束空间电荷中和的方法。

    Electron confinement inside magent of ion implanter
    6.
    发明申请
    Electron confinement inside magent of ion implanter 有权
    离子注入机内部的电子限制

    公开(公告)号：US20060169911A1

    公开(公告)日：2006-08-03

    申请号：US11272193

    申请日：2005-11-10

    申请人： Anthony Renau ,  Joseph Olson ,  Shengwu Chang ,  James Buff

    发明人： Anthony Renau ,  Joseph Olson ,  Shengwu Chang ,  James Buff

    IPC分类号： H01J1/50

    CPC分类号： H01J37/1475 ,  H01J37/026 ,  H01J37/3171 ,  H01J2237/0041 ,  H01J2237/0042 ,  H01J2237/055

    摘要： A method and apparatus are disclosed for improving space charge neutralization adjacent a magnet of an ion implanter by confining the electrons inside a magnetic region thereof to reduce electron losses and therefore improve the transport efficiency of a low energy beam. A magnetic pole member for a magnet of an ion implanter is provided that includes an outer surface having a plurality of magnetic field concentration members that form magnetic field concentrations adjacent the magnetic pole member. Electrons that encounter this increased magnetic field are repelled back along the same magnetic field line rather than allowed to escape. An analyzer magnet and ion implanter including the magnet pole are also provided so that a method of improving low energy ion beam space charge neutralization in an ion implanter is realized.

    摘要翻译： 公开了一种用于通过将电子限制在其磁性区域内以减少电子损失并因此提高低能量束的传输效率来改进邻近离子注入机的磁体的空间电荷中和的方法和装置。 提供了一种用于离子注入机的磁体的磁极构件，其包括具有与磁极构件相邻形成磁场浓度的多个磁场浓度构件的外表面。 遇到这种增加的磁场的电子沿着相同的磁场线被击退，而不是允许逃逸。 还提供了包括磁极的分析器磁体和离子注入机，从而实现了在离子注入机中提高低能量离子束空间电荷中和的方法。

    Tilted Plasma Doping
    7.
    发明申请
    Tilted Plasma Doping 审中-公开
    倾斜等离子体兴奋剂

    公开(公告)号：US20060236931A1

    公开(公告)日：2006-10-26

    申请号：US10908009

    申请日：2005-04-25

    申请人： Vikram Singh ,  James Buff ,  Rajesh Dorai

    发明人： Vikram Singh ,  James Buff ,  Rajesh Dorai

    IPC分类号： C23F1/00 ,  C23C16/00

    CPC分类号： H01J37/32412 ,  C23C14/48 ,  H01J37/32009 ,  H01J37/32752

    摘要： A plasma doping apparatus includes a chamber and a plasma source that generates ions in the chamber from a dopant gas. A grating is positioned in the chamber. A platen for supporting a target is positioned in the chamber. At least one of the grating and the target are oriented so that dopant ions extracted from the grating impact the target at a non-normal angle of incidence.

    摘要翻译： 等离子体掺杂装置包括腔室和等离子体源，其在腔室中从掺杂气体产生离子。 光栅位于腔室中。 用于支撑靶的压板位于腔室中。 光栅和靶中的至少一个被定向成使得从光栅提取的掺杂离子以非正常的入射角撞击靶。

    Ion implanter having enhanced low energy ion beam transport
    8.
    发明申请
    Ion implanter having enhanced low energy ion beam transport 审中-公开
    离子注入机具有增强的低能量离子束传输

    公开(公告)号：US20060043316A1

    公开(公告)日：2006-03-02

    申请号：US10458037

    申请日：2003-06-10

    申请人： Reuel Liebert ,  Harold Persing ,  James Buff

    发明人： Reuel Liebert ,  Harold Persing ,  James Buff

    IPC分类号： H01J37/08

    CPC分类号： H01J37/1471 ,  H01J37/3171

    摘要： An ion implanter includes an ion source for generating an ion beam, a target site for supporting a target for ion implantation and a beamline defining a beam path between the ion source and the target site. In one aspect, a magnetic steerer is disposed between the ion source and the target site for at least partially correcting unwanted deviation of the ion beam from the beam path. The magnetic steerer may position the ion beam relative to an entrance aperture of an ion optical element. In another aspect, the beamline includes a deceleration stage for decelerating the ion beam from a first transport energy to a second transport energy. The deceleration stage includes two or more electrodes, wherein at least one of the electrodes is a grid electrode positioned in the beam path.

    摘要翻译： 离子注入机包括用于产生离子束的离子源，用于支撑用于离子注入的靶的靶位点和限定离子源与靶位点之间的束路径的束线。 一方面，磁离子源设置在离子源和目标部位之间，用于至少部分地校正离子束与束路径的不期望的偏差。 磁力搅拌器可以相对于离子光学元件的入口孔定位离子束。 在另一方面，束线包括用于将离子束从第一输送能量减速到第二输送能量的减速阶段。 减速阶段包括两个或更多个电极，其中至少一个电极是位于光束路径中的栅电极。