公开(公告)号：US20140264954A1

公开(公告)日：2014-09-18

申请号：US14160106

申请日：2014-01-21

Applicant: Applied Materials, Inc.

Inventor： Loke Yuen WONG ,  Chin Hock TOH ,  Aksel KITOWSKI

IPC: H01L25/00 ,  H01L23/31 ,  H01L21/56 ,  H01L25/04

CPC classification number: H01L25/50 ,  H01L21/561 ,  H01L21/568 ,  H01L23/3135 ,  H01L24/13 ,  H01L24/16 ,  H01L24/19 ,  H01L24/96 ,  H01L2224/12105 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2924/014 ,  H01L2924/00

Abstract: Embodiments of the invention generally relate to molded wafers having reduced warpage, bowing, and outgassing, and methods for forming the same. The molded wafers include a support layer of silicon nitride disposed on a surface thereof to facilitate rigidity and reduced outgassing. The silicon nitride layer may be formed on the molded wafer, for example, by plasma-enhanced chemical vapor deposition or hot-wire chemical vapor deposition.

Abstract translation: 本发明的实施方案通常涉及具有减小的翘曲，弯曲和脱气的模制晶片及其形成方法。 模制的晶片包括设置在其表面上的氮化硅的支撑层，以便于刚性并减少除气。 氮化硅层可以例如通过等离子体增强化学气相沉积或热线化学气相沉积形成在模制晶片上。

公开(公告)号：US20180240666A1

公开(公告)日：2018-08-23

申请号：US15959008

申请日：2018-04-20

Applicant: Applied Materials, Inc.

Inventor： Loke Yuen WONG ,  Ke CHANG ,  Yueh Sheng OW ,  Ananthkrishna JUPUDI ,  Glen T. MORI ,  Aksel KITOWSKI ,  Arkajit Roy BARMAN

IPC: H01L21/02 ,  C23C16/511 ,  H01L21/3105 ,  C23C14/22 ,  H01L21/67 ,  C23C16/46

CPC classification number: H01L21/02345 ,  C23C14/22 ,  C23C16/46 ,  C23C16/511 ,  H01L21/02118 ,  H01L21/02266 ,  H01L21/0234 ,  H01L21/31058 ,  H01L21/67115

Abstract: Methods and apparatus for processing a substrate are described herein. A vacuum multi-chamber deposition tool can include a degas chamber with both a heating mechanism and a variable frequency microwave source. The methods described herein use variable frequency microwave radiation to increased quality and speed of the degas process without damaging the various components.

公开(公告)号：US20170117146A1

公开(公告)日：2017-04-27

申请号：US15399614

申请日：2017-01-05

Applicant: Applied Materials, Inc.

Inventor： Loke Yuen WONG ,  Ke CHANG ,  Yueh Sheng OW ,  Ananthkrishna JUPUDI ,  Glen T. MORI ,  Aksel KITOWSKI ,  Arkajit Roy BARMAN

IPC: H01L21/02 ,  C23C16/511 ,  C23C14/22 ,  C23C16/46 ,  H01L21/3105 ,  H01L21/67

CPC classification number: H01L21/02345 ,  C23C14/22 ,  C23C16/46 ,  C23C16/511 ,  H01L21/02118 ,  H01L21/02266 ,  H01L21/0234 ,  H01L21/31058 ,  H01L21/67115

Abstract: Methods and apparatus for processing a substrate are described herein. A vacuum multi-chamber deposition tool can include a degas chamber with both a heating mechanism and a variable frequency microwave source. The methods described herein use variable frequency microwave radiation to increased quality and speed of the degas process without damaging the various components.

公开(公告)号：US20150056819A1

公开(公告)日：2015-02-26

申请号：US14322484

申请日：2014-07-02

Applicant: Applied Materials, Inc.

Inventor： Loke Yuen WONG ,  Ke CHANG ,  Yueh Sheng OW ,  Ananthkrishna JUPUDI ,  Glen T. MORI ,  Aksel KITOWSKI ,  Arkajit Roy BARMAN

IPC: H01L21/02

CPC classification number: H01L21/02345 ,  C23C14/22 ,  C23C16/46 ,  C23C16/511 ,  H01L21/02118 ,  H01L21/02266 ,  H01L21/0234 ,  H01L21/31058 ,  H01L21/67115

Abstract: Methods and apparatus for processing a substrate are described herein. A vacuum multi-chamber deposition tool can include a degas chamber with both a heating mechanism and a variable frequency microwave source. The methods described herein use variable frequency microwave radiation to increased quality and speed of the degas process without damaging the various components.

Abstract translation: 本文描述了用于处理衬底的方法和设备。 真空多室沉积工具可以包括具有加热机构和可变频率微波源的脱气室。 本文描述的方法使用可变频率微波辐射来提高脱气过程的质量和速度，而不损害各种组分。