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    Tuning of emission properties of quantum emission devices using strain-tuned piezoelectric template layers
    2.
    发明授权
    Tuning of emission properties of quantum emission devices using strain-tuned piezoelectric template layers 有权

    公开(公告)号：US11575065B2

    公开(公告)日：2023-02-07

    申请号：US17162909

    申请日：2021-01-29

    申请人： Applied Materials, Inc.

    发明人： Abhijeet Laxman Sangle

    IPC分类号： H01L33/06 ,  H01L33/32 ,  H01L33/40 ,  H01L33/00 ,  G06N10/00

    摘要： A quantum device includes a substrate including a first material and including an upper surface thereof, a first layer comprising a compound of the first material disposed on the upper surface of the substrate, a second layer, comprising a metal oxide, disposed on the first layer, a third layer, comprising a noble metal, disposed on the second layer, a fourth layer, comprising a metal oxide, disposed on the third layer, a fifth layer, comprising a piezoelectric material, disposed on the fourth layer, a sixth layer, comprising a noble metal, disposed on the fifth layer, a seventh layer, comprising a material capable of quantum emission, disposed on the sixth layer, and an eighth layer, comprising a noble metal, disposed on the seventh layer, and at least one of the eighth layer and the seventh layer are sized to enable quantum emission from the seventh layer.

    Pulsed DC Power For Deposition Of Film
    4.
    发明申请
    Pulsed DC Power For Deposition Of Film 有权

    公开(公告)号：US20220285129A1

    公开(公告)日：2022-09-08

    申请号：US17684911

    申请日：2022-03-02

    申请人： Applied Materials, Inc.

    发明人： Abhijeet Laxman Sangle ,  Nilesh Patil ,  Vijay Bhan Sharma ,  Visweswaren Sivaramakrishnan

    IPC分类号： H01J37/32 ,  H01J37/34 ,  C23C14/34 ,  C23C14/08

    摘要： A vapor deposition system and methods of operation thereof are disclosed. The vapor deposition system includes a vacuum chamber; a dielectric target within the vacuum chamber, the dielectric target having a front surface and a thickness; a substrate support within the vacuum chamber, the substrate support having a front surface spaced from the front surface of the dielectric target to form a process gap; and a signal generator connected to the dielectric target to generate a plasma in the vacuum chamber, the signal generator comprises a power source, the power source configured to prevent charge accumulation in the dielectric target. The method includes applying power to a dielectric target within a vacuum chamber to generate a plasma in a process gap between the dielectric target and a substrate support and pulsing the power applied to the dielectric target to prevent charge accumulation.

    METHOD OF MANUFACTURING ALUMINUM NITRIDE FILMS
    8.
    发明申请
    METHOD OF MANUFACTURING ALUMINUM NITRIDE FILMS 有权

    公开(公告)号：US20220320417A1

    公开(公告)日：2022-10-06

    申请号：US17220136

    申请日：2021-04-01

    申请人： Applied Materials, Inc.

    发明人： Abhijeet Laxman Sangle ,  Suresh Chand Seth ,  Vijay Bhan Sharma ,  Bharatwaj Ramakrishnan ,  Ankur Anant Kadam

    IPC分类号： H01L41/316 ,  H01L41/18 ,  H01L41/29

    摘要： Doped-aluminum nitride (doped-AlN) films and methods of manufacturing doped-AlN films are disclosed. Some methods comprise forming alternating pinning layers and doped-AlN layers including a dopant selected from the group consisting of Sc, Y, Hf, Mg, Zr and Cr, wherein the pinning layers pin the doped-AlN layers to a c-axis orientation. Some methods include forming a conducting layer including a material selected from the group consisting of Mo, Pt, Ta, Ru, LaNiO3 and SrRuO3. Some methods include forming a thermal oxide layer having silicon oxide on a silicon substrate. Piezoelectric devices comprising the doped-AlN film are also disclosed.