公开(公告)号：US12084761B2

公开(公告)日：2024-09-10

申请号：US18111385

申请日：2023-02-17

Applicant: Applied Materials, Inc.

Inventor： Karl J. Armstrong ,  Ludovic Godet ,  Brian Alexander Cohen ,  Wayne McMillan ,  James D. Strassner ,  Benjamin B. Riordon

IPC: H01L21/677 ,  C23C14/04 ,  C23C14/06 ,  C23C14/08 ,  C23C14/14 ,  C23C16/04 ,  C23C16/24 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  C23C16/56 ,  H01L21/68 ,  H01L21/683 ,  G02B6/132

CPC classification number: C23C16/405 ,  C23C14/042 ,  C23C14/0652 ,  C23C14/083 ,  C23C14/086 ,  C23C14/14 ,  C23C16/042 ,  C23C16/24 ,  C23C16/345 ,  C23C16/407 ,  C23C16/45525 ,  C23C16/56 ,  H01L21/67766 ,  H01L21/67778 ,  H01L21/682 ,  H01L21/6838 ,  G02B6/132

Abstract: Embodiments of the present disclosure relate to forming multi-depth films for the fabrication of optical devices. One embodiment includes disposing a base layer of a device material on a surface of a substrate. One or more mandrels of the device material are disposed on the base layer. The disposing the one or more mandrels includes positioning a mask over of the base layer. The device material is deposited with the mask positioned over the base layer to form an optical device having the base layer with a base layer depth and the one or more mandrels having a first mandrel depth and a second mandrel depth.

公开(公告)号：US11614685B2

公开(公告)日：2023-03-28

申请号：US17545554

申请日：2021-12-08

Applicant: Applied Materials, Inc.

Inventor： Ludovic Godet ,  Chien-An Chen ,  Brian Alexander Cohen ,  Wayne McMillan ,  Ian Matthew McMackin

IPC: G03F7/00 ,  H01L21/311 ,  G02B6/34

Abstract: Methods for patterning of multi-depth layers for the fabrication of optical devices are provided. In one embodiment, a method is provided that includes disposing a resist layer over a device layer disposed over a top surface of a substrate, the device layer having a first portion and a second portion, patterning the resist layer to form a first resist layer pattern having a plurality of first openings and a second resist layer pattern having a plurality of second openings, and etching exposed portions of the device layer defined by the plurality of first openings and the plurality of second openings, wherein the plurality of first openings are configured to form at least a portion of a plurality of first structures within the optical device, and the plurality of second openings are configured to form at least a portion of a plurality of second structures within the optical device.

公开(公告)号：US11226556B2

公开(公告)日：2022-01-18

申请号：US16844636

申请日：2020-04-09

Applicant: Applied Materials, Inc.

Inventor： Ludovic Godet ,  Chien-An Chen ,  Brian Alexander Cohen ,  Wayne McMillan ,  Ian Matthew McMackin

IPC: G03F7/00 ,  H01L21/311 ,  G02B6/34

Abstract: Methods for patterning of multi-depth layers for the fabrication of optical devices are provided. In one embodiment, a method is provided that includes disposing a resist layer over a device layer disposed over a top surface of a substrate, the device layer having a first portion and a second portion, patterning the resist layer to form a first resist layer pattern having a plurality of first openings and a second resist layer pattern having a plurality of second openings, and etching exposed portions of the device layer defined by the plurality of first openings and the plurality of second openings, wherein the plurality of first openings are configured to form at least a portion of a plurality of first structures within the optical device, and the plurality of second openings are configured to form at least a portion of a plurality of second structures within the optical device.

公开(公告)号：US11976002B2

公开(公告)日：2024-05-07

申请号：US17141813

申请日：2021-01-05

Applicant: Applied Materials, Inc.

Inventor： Alexia Adilene Portillo Rivera ,  Andrew Ceballos ,  Kenichi Ohno ,  Rami Hourani ,  Karl J. Armstrong ,  Brian Alexander Cohen

IPC: C03C17/36 ,  C23C14/06 ,  C23C14/08 ,  C23C14/18 ,  C23C14/34

CPC classification number: C03C17/3615 ,  C03C17/3626 ,  C03C17/3642 ,  C03C17/3644 ,  C03C17/3663 ,  C23C14/0652 ,  C23C14/08 ,  C23C14/18 ,  C23C14/3407 ,  C03C2218/154

Abstract: Embodiments of the present disclosure generally relate to encapsulated optical devices and methods for fabricating the encapsulated optical devices. In one or more embodiments, a method for encapsulating an optical device includes depositing a metallic silver layer on a substrate, depositing a barrier layer on the metallic silver layer, where the barrier layer contains silicon nitride, a metallic element, a metal nitride, or any combination thereof, and depositing an encapsulation layer containing silicon oxide on the barrier layer.

公开(公告)号：US11608558B2

公开(公告)日：2023-03-21

申请号：US16843347

申请日：2020-04-08

Applicant: Applied Materials, Inc.

Inventor： Karl J. Armstrong ,  Ludovic Godet ,  Brian Alexander Cohen ,  Wayne McMillan ,  James D. Strassner ,  Benjamin Riordon

IPC: C23C16/40 ,  C23C14/04 ,  C23C16/04 ,  C23C16/455 ,  C23C14/08 ,  C23C14/06 ,  C23C14/14 ,  C23C16/24 ,  C23C16/34 ,  H01L21/677 ,  C23C16/56 ,  G02B6/132

Abstract: Embodiments of the present disclosure relate to forming multi-depth films for the fabrication of optical devices. One embodiment includes disposing a base layer of a device material on a surface of a substrate. One or more mandrels of the device material are disposed on the base layer. The disposing the one or more mandrels includes positioning a mask over of the base layer. The device material is deposited with the mask positioned over the base layer to form an optical device having the base layer with a base layer depth and the one or more mandrels having a first mandrel depth and a second mandrel depth.

公开(公告)号：US20210382212A1

公开(公告)日：2021-12-09

申请号：US17329955

申请日：2021-05-25

Applicant: Applied Materials, Inc.

Inventor： David Sell ,  Brian Alexander Cohen

IPC: G02B5/18

Abstract: Embodiments described herein relate to gradient encapsulation of waveguide outcoupler gratings for control of diffraction efficiency and directionality. A device includes a first grating formed over a substrate, the first grating having a plurality of first structures extending away from the substrate, the first grating corresponding to an outcoupler. The device includes a first encapsulant disposed in one or more gaps formed between adjacent first structures, where a fill ratio of the first encapsulant decreases along the first grating. Also described herein are methods for fabricating the device.