公开(公告)号：US20200350157A1

公开(公告)日：2020-11-05

申请号：US16403312

申请日：2019-05-03

Applicant: Applied Materials, Inc.

Inventor： David Chu ,  Steven C. Hung ,  Malcolm J. Bevan ,  Charles Chu ,  Tatsuya E. Sato ,  Shih-Chung Chen ,  Patricia M. Liu ,  Johanes Swenberg

IPC: H01L21/02 ,  H01L21/28

Abstract: Processing methods may be performed to produce semiconductor structures that may include a high-k dielectric material. The methods may include delivering a nitrogen-containing precursor or an oxygen-containing precursor to a substrate contained in a semiconductor processing chamber. The methods may include forming reactive ligands on an exposed surface of the substrate with the nitrogen-containing precursor or the oxygen-containing precursor. The methods may also include forming a high-k dielectric material overlying the substrate.

公开(公告)号：US09530898B2

公开(公告)日：2016-12-27

申请号：US14515767

申请日：2014-10-16

Applicant: APPLIED MATERIALS, INC.

Inventor： Udayan Ganguly ,  Yoshitaka Yokota ,  Jing Tang ,  Sunderraj Thirupapuliyur ,  Christopher Sean Olsen ,  Shiyu Sun ,  Tze Wing Poon ,  Wei Liu ,  Johanes Swenberg ,  Vicky U. Nguyen ,  Swaminathar Srinivasan ,  Jacob Newman

IPC: H01L29/788 ,  H01L21/67 ,  H01L21/762 ,  H01L27/115

CPC classification number: H01L29/788 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/76232 ,  H01L27/11521

Abstract: Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. In some embodiments, a semiconductor device may include a floating gate having a first width proximate a base of the floating gate that is greater than a second width proximate a top of the floating gate. In some embodiments, a method of shaping a material layer may include (a) oxidizing a surface of a material layer to form an oxide layer at an initial rate; (b) terminating formation of the oxide layer when the oxidation rate is about 90% or below of the initial rate; (c) removing at least some of the oxide layer by an etching process; and (d) repeating (a) through (c) until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.

Abstract translation: 适用于窄间距应用的半导体器件及其制造方法在本文中描述。 在一些实施例中，半导体器件可以包括具有接近浮动栅极的基极的第一宽度的浮动栅极，该第一宽度大于靠近浮动栅极顶部的第二宽度。 在一些实施例中，成形材料层的方法可以包括（a）氧化材料层的表面以以初始速率形成氧化物层; （b）当氧化速率为初始速率的约90％或更低时终止氧化物层的形成; （c）通过蚀刻工艺去除至少一些氧化物层; 和（d）重复（a）到（c）直到材料层形成所需的形状。 在一些实施例中，材料层可以是半导体器件的浮置栅极。

公开(公告)号：US11271097B2

公开(公告)日：2022-03-08

申请号：US17080519

申请日：2020-10-26

Applicant: Applied Materials, Inc.

Inventor： Steven C. Hung ,  Benjamin Colombeau ,  Abhishek Dube ,  Sheng-Chin Kung ,  Patricia M. Liu ,  Malcolm J. Bevan ,  Johanes Swenberg

IPC: H01L29/66 ,  H01L29/786 ,  H01L21/02

Abstract: Processing methods may be performed to produce semiconductor structures that may include a high-k dielectric material. The methods may include forming a silicon layer over a semiconductor substrate. The semiconductor substrate may include silicon germanium. The methods may include oxidizing a portion of the silicon layer to form a sacrificial oxide while maintaining a portion of the silicon layer in contact with the semiconductor substrate. The methods may include removing the sacrificial oxide. The methods may include oxidizing the portion of the silicon layer in contact with the semiconductor substrate to form an oxygen-containing material. The methods may include forming a high-k dielectric material overlying the oxygen-containing material.

公开(公告)号：US09048190B2

公开(公告)日：2015-06-02

申请号：US14044090

申请日：2013-10-02

Applicant: APPLIED MATERIALS, INC.

Inventor： Jeffrey Tobin ,  Bernard L. Hwang ,  Canfeng Lai ,  Lara Hawrylchak ,  Wei Liu ,  Johanes Swenberg

IPC: H01L21/311 ,  H01L21/461 ,  H01L21/3065 ,  H01L21/67

CPC classification number: H01L21/67069 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/32422 ,  H01L21/0217 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/67103 ,  H01L21/67115 ,  H01L21/6831

Abstract: Methods and apparatus for processing a substrate are provided. In some embodiments, a method of processing a substrate having a first layer may include disposing a substrate atop a substrate support in a lower processing volume of a process chamber beneath an ion shield having a bias power applied thereto, the ion shield comprising a substantially flat member supported parallel to the substrate support, and a plurality of apertures formed through the flat member, wherein the ratio of the aperture diameter to the thickness flat member ranges from about 10:1-1:10; flowing a process gas into an upper processing volume above the ion shield; forming a plasma from the process gas within the upper processing volume; treating the first layer with neutral radicals that pass through the ion shield; and heating the substrate to a temperature of up to about 550 degrees Celsius while treating the first layer.

Abstract translation: 提供了用于处理基板的方法和装置。 在一些实施例中，处理具有第一层的衬底的方法可以包括将衬底支撑件顶部放置在具有施加到其上的偏置功率的离子屏蔽下方的处理室下部处理体积中，离子屏蔽包括基本平坦的 平行于衬底支撑件支撑的构件和穿过平坦构件形成的多个孔，其中孔径与厚度平坦构件的比例为约10:1-1:10; 将处理气体流入离子屏蔽物上方的上部处理体积; 从所述上加工容积内的工艺气体形成等离子体; 用通过离子屏蔽的中性自由基处理第一层; 并且在处理第一层的同时将基底加热至高达约550摄氏度的温度。

公开(公告)号：US08993458B2

公开(公告)日：2015-03-31

申请号：US13764137

申请日：2013-02-11

Applicant: Applied Materials, Inc.

Inventor： Agus Tjandra ,  Christopher S. Olsen ,  Johanes Swenberg ,  Lara Hawrylchak

IPC: H01L21/00 ,  H01L21/02 ,  H01L21/67

CPC classification number: H01L21/67098 ,  H01L21/02238 ,  H01L21/02244 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67248

Abstract: Methods and apparatus for improving selective oxidation against metals in a process chamber are provided herein. In some embodiments, a method of oxidizing a first surface of a substrate disposed in a process chamber having a processing volume defined by one or more chamber walls may include exposing the substrate to an oxidizing gas to oxidize the first surface; and actively heating at least one of the one or more chamber walls to increase a temperature of the one or more chamber walls to a first temperature of at least the dew point of water while exposing the substrate to the oxidizing gas.

Abstract translation: 本文提供了用于改善处理室中金属选择性氧化的方法和装置。 在一些实施例中，氧化设置在具有由一个或多个室壁限定的处理容积的处理室中的衬底的第一表面的方法可以包括将衬底暴露于氧化气体以氧化第一表面; 并且主动地加热所述一个或多个室壁中的至少一个，以将所述一个或多个室壁的温度升高至至少水的露点的第一温度，同时将所述衬底暴露于所述氧化气体。

公开(公告)号：US20210134986A1

公开(公告)日：2021-05-06

申请号：US17080519

申请日：2020-10-26

Applicant: Applied Materials, Inc.

Inventor： Steven C. Hung ,  Benjamin Colombeau ,  Abhishek Dube ,  Sheng-Chin Kung ,  Patricia M. Liu ,  Malcolm J. Bevan ,  Johanes Swenberg

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/786

Abstract: Processing methods may be performed to produce semiconductor structures that may include a high-k dielectric material. The methods may include forming a silicon layer over a semiconductor substrate. The semiconductor substrate may include silicon germanium. The methods may include oxidizing a portion of the silicon layer to form a sacrificial oxide while maintaining a portion of the silicon layer in contact with the semiconductor substrate. The methods may include removing the sacrificial oxide. The methods may include oxidizing the portion of the silicon layer in contact with the semiconductor substrate to form an oxygen-containing material. The methods may include forming a high-k dielectric material overlying the oxygen-containing material.

公开(公告)号：US09514968B2

公开(公告)日：2016-12-06

申请号：US14673320

申请日：2015-03-30

Applicant: APPLIED MATERIALS, INC.

Inventor： Agus Tjandra ,  Christopher S. Olsen ,  Johanes Swenberg ,  Lara Hawrylchak

IPC: H01L21/00 ,  C23C16/00 ,  H01L21/67 ,  H01L21/02

CPC classification number: H01L21/67098 ,  H01L21/02238 ,  H01L21/02244 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67248

Abstract: Methods and apparatus for improving selective oxidation against metals in a process chamber are provided herein. In some embodiments, a method of oxidizing a first surface of a substrate disposed in a process chamber having a processing volume defined by one or more chamber walls may include exposing the substrate to an oxidizing gas to oxidize the first surface; and actively heating at least one of the one or more chamber walls to increase a temperature of the one or more chamber walls to a first temperature of at least the dew point of water while exposing the substrate to the oxidizing gas.