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公开(公告)号：US20250101578A1
公开(公告)日：2025-03-27
申请号：US18975559
申请日：2024-12-10
Applicant: Applied Materials, Inc.
Inventor： Xinhai Han , Hang Yu , Kesong Hu , Kristopher R. Enslow , Masaki Ogata , Wenjiao Wang , Chuan Ying Wang , Chuanxi Yang , Joshua Maher , Phaik Lynn Leong , Grace Qi En Teong , Alok Jain , Nagarajan Rajagopalan , Deenesh Padhi , SeoYoung Lee
Abstract: Exemplary semiconductor structures may include a stack of layers overlying a substrate. The stack of layers may include a first portion of layers, a second portion of layers overlying the first portion of layers, and a third portion of layers overlying the second portion of layers. The first portion of layers, the second portion of layers, and the third portion of layers may include alternating layers of a silicon oxide material and a silicon nitride material. One or more apertures may be formed through the stack of layers. A lateral notch in each individual layer of silicon nitride material at an interface of the individual layer of silicon nitride material and an overlying layer of silicon oxide material may extend a distance less than or about 100% of a distance corresponding to a thickness of the individual layer of silicon nitride material.
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公开(公告)号：US20220102179A1
公开(公告)日：2022-03-31
申请号：US17036048
申请日：2020-09-29
Applicant: Applied Materials, Inc.
Inventor： Zheng John Ye , Daemian Raj Benjamin Raj , Rana Howlader , Abhigyan Keshri , Sanjay G. Kamath , Dmitry A. Dzilno , Juan Carlos Rocha-Alvarez , Shailendra Srivastava , Kristopher R. Enslow , Xinhai Han , Deenesh Padhi , Edward P. Hammond
IPC: H01L21/683 , H01L21/67 , H01J37/32
Abstract: Exemplary semiconductor processing systems may include a processing chamber and an electrostatic chuck disposed at least partially within the processing chamber. The electrostatic chuck may include at least one electrode and a heater. A semiconductor processing system may include a power supply to provide a signal to the electrode to provide electrostatic force to secure a substrate to the electrostatic chuck. The system may also include a filter communicatively coupled between the power supply and the electrode. The filter is configured to remove or reduce noise introduced into the chucking signal by operating the heater while the electrostatic force on the substrate is maintained. The filter may include active circuitry, passive circuitry, or both, and may include an adjustment circuit to set the gain of the filter so that an output signal level from the filter corresponds to an input signal level for the filter.
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公开(公告)号：US12195846B2
公开(公告)日：2025-01-14
申请号：US16986632
申请日：2020-08-06
Applicant: Applied Materials, Inc.
Inventor： Xinhai Han , Hang Yu , Kesong Hu , Kristopher R. Enslow , Masaki Ogata , Wenjiao Wang , Chuan Ying Wang , Chuanxi Yang , Joshua Maher , Phaik Lynn Leong , Grace Qi En Teong , Alok Jain , Nagarajan Rajagopalan , Deenesh Padhi , SeoYoung Lee
Abstract: Exemplary methods of forming semiconductor structures may include forming a silicon oxide layer from a silicon-containing precursor and an oxygen-containing precursor. The methods may include forming a silicon nitride layer from a silicon-containing precursor, a nitrogen-containing precursor, and an oxygen-containing precursor. The silicon nitride layer may be characterized by an oxygen concentration greater than or about 5 at. %. The methods may also include repeating the forming a silicon oxide layer and the forming a silicon nitride layer to produce a stack of alternating layers of silicon oxide and silicon nitride.
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公开(公告)号：US11776835B2
公开(公告)日：2023-10-03
申请号：US17036048
申请日：2020-09-29
Applicant: Applied Materials, Inc.
Inventor： Zheng John Ye , Daemian Raj Benjamin Raj , Rana Howlader , Abhigyan Keshri , Sanjay G. Kamath , Dmitry A. Dzilno , Juan Carlos Rocha-Alvarez , Shailendra Srivastava , Kristopher R. Enslow , Xinhai Han , Deenesh Padhi , Edward P. Hammond
IPC: H01L21/683 , H01L21/67 , H01J37/32
CPC classification number: H01L21/6833 , H01J37/32183 , H01J37/32697 , H01J37/32724 , H01L21/67069 , H01L21/67103
Abstract: Exemplary semiconductor processing systems may include a processing chamber and an electrostatic chuck disposed at least partially within the processing chamber. The electrostatic chuck may include at least one electrode and a heater. A semiconductor processing system may include a power supply to provide a signal to the electrode to provide electrostatic force to secure a substrate to the electrostatic chuck. The system may also include a filter communicatively coupled between the power supply and the electrode. The filter is configured to remove or reduce noise introduced into the chucking signal by operating the heater while the electrostatic force on the substrate is maintained. The filter may include active circuitry, passive circuitry, or both, and may include an adjustment circuit to set the gain of the filter so that an output signal level from the filter corresponds to an input signal level for the filter.
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