公开(公告)号：US20180358222A1

公开(公告)日：2018-12-13

申请号：US15979842

申请日：2018-05-15

Applicant: Applied Materials, Inc.

Inventor： Eswaranand VENKATASUBRAMANIAN ,  Samuel E. GOTTHEIM ,  Yang YANG ,  Pramit MANNA ,  Kartik RAMASWAMY ,  Takehito KOZHIZAWA ,  Abhijit Basu MALLICK ,  Srinivas GANDIKOTA

IPC: H01L21/02 ,  H01L21/033 ,  H01L21/311 ,  H01L21/683 ,  H01J37/32 ,  C23C16/27 ,  C23C16/505 ,  C23C16/56 ,  G03F7/20

CPC classification number: H01L21/02115 ,  C23C16/272 ,  C23C16/505 ,  C23C16/56 ,  G03F7/70033 ,  H01J37/32082 ,  H01J37/32715 ,  H01J2237/3321 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/6831 ,  H01L27/11551 ,  H01L27/11578

Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of high-density films for patterning applications. In one implementation, a method of processing a substrate is provided. The method includes flowing a hydrocarbon-containing gas mixture into a processing volume of a process chamber having a substrate positioned on an electrostatic chuck. The substrate is maintained at a pressure between about 0.5 mTorr and about 10 Torr. The method further includes generating a plasma at the substrate level by applying a first RF bias to the electrostatic chuck to deposit a diamond-like carbon film on the substrate. The diamond-like carbon film has a density greater than 1.8 g/cc and a stress less than −500 MPa.