公开(公告)号：US20150093891A1

公开(公告)日：2015-04-02

申请号：US14482601

申请日：2014-09-10

Applicant: Applied Materials, Inc.

Inventor： Bhushan N. ZOPE ,  Avgerinos V. GELATOS ,  Bo ZHENG ,  Yu LEI ,  Xinyu FU ,  Srinivas GANDIKOTA ,  Sang Ho YU ,  Mathew ABRAHAM

IPC: H01L21/768

CPC classification number: H01L21/76877 ,  C23C16/18 ,  H01L21/2855 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76879 ,  H01L21/76883

Abstract: Methods for depositing a metal layer in a feature definition of a semiconductor device are provided. In one implementation, a method for depositing a metal layer for forming a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a metal layer on a substrate and annealing the metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the metal layer on the substrate, exposing the portion of the metal layer to either a plasma treatment process or hydrogen annealing process and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the metal layer to either a plasma treatment process or hydrogen annealing process until a predetermined thickness of the metal layer is achieved.

Abstract translation: 提供了在半导体器件的特征定义中沉积金属层的方法。 在一个实施方案中，提供了一种用于沉积用于形成半导体器件的金属层的方法。 该方法包括进行循环金属沉积工艺以将金属层沉积在衬底上并使设置在衬底上的金属层退火。 循环金属沉积工艺包括将衬底暴露于沉积前体气体混合物以将金属层的一部分沉积在衬底上，将金属层的一部分暴露于等离子体处理工艺或氢退火工艺中，并重复暴露衬底 到沉积前体气体混合物并将金属层的该部分暴露于等离子体处理工艺或氢气退火工艺中，直到达到金属层的预定厚度。

公开(公告)号：US20140011354A1

公开(公告)日：2014-01-09

申请号：US13956969

申请日：2013-08-01

Applicant: Applied Materials, Inc.

Inventor： Yu LEI ,  Xinyu FU ,  Anantha SUBRAMANI ,  Seshadri GANGULI ,  Srinivas GANDIKOTA

IPC: H01L21/02

CPC classification number: H01L21/02697 ,  B82Y40/00 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/7681 ,  H01L21/76834 ,  H01L21/76846 ,  H01L21/7685 ,  H01L21/76856 ,  H01L21/76858 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76885 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the invention provide methods for forming materials on a substrate used for metal gate and other applications. In one embodiment, a method includes forming a cobalt stack over a barrier layer disposed on a substrate by depositing a cobalt layer during a deposition process, exposing the cobalt layer to a plasma to form a plasma-treated cobalt layer during a plasma process, and repeating the cobalt deposition process and the plasma process to form the cobalt stack containing a plurality of plasma-treated cobalt layers. The method further includes exposing the cobalt stack to an oxygen source gas to form a cobalt oxide layer from an upper portion of the cobalt stack during a surface oxidation process and heating the remaining portion of the cobalt stack to a temperature within a range from about 300° C. to about 500° C. to form a crystalline cobalt film during a thermal annealing crystallization process.

Abstract translation: 本发明的实施例提供了在用于金属栅极和其它应用的基板上形成材料的方法。 在一个实施例中，一种方法包括通过在沉积工艺期间沉积钴层而在设置在衬底上的势垒层上形成钴堆叠，在等离子体工艺期间将钴层暴露于等离子体以形成等离子体处理的钴层，以及 重复钴沉积工艺和等离子体工艺以形成含有多个等离子体处理的钴层的钴堆。 该方法还包括将钴堆叠暴露于氧源气体，以在表面氧化过程期间从钴堆叠的上部形成钴氧化物层，并将钴堆叠的剩余部分加热至约300 约500℃，以在热退火结晶过程中形成结晶钴膜。

公开(公告)号：US20140295665A1

公开(公告)日：2014-10-02

申请号：US14303292

申请日：2014-06-12

Applicant: Applied Materials, Inc.

Inventor： Bo ZHENG ,  Arvind SUNDARRAJAN ,  Xinyu FU

IPC: H01L21/02 ,  H01L21/285

CPC classification number: H01L21/02063 ,  H01J37/32082 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/743 ,  H01L21/768

Abstract: Native oxides and associated residue are removed from surfaces of a substrate by sequentially performing two plasma cleaning processes on the substrate in a single processing chamber. The first plasma cleaning process removes native oxide formed on a substrate surface by generating a cleaning plasma from a mixture of ammonia (NH3) and nitrogen trifluoride (NF3) gases, condensing products of the cleaning plasma on the native oxide to form a thin film that contains ammonium hexafluorosilicate ((NH4)2SiF6), and subliming the thin film off of the substrate surface. The second plasma cleaning process removes remaining residues of the thin film by generating a second cleaning plasma from nitrogen trifluoride gas. Products of the second cleaning plasma react with a few angstroms of the bare silicon present on the surface, forming silicon tetrafluoride (SiF4) and lifting off residues of the thin film.

Abstract translation: 通过在单个处理室中在衬底上依次执行两个等离子体清洗工艺，从衬底的表面除去天然氧化物和相关残留物。 第一等离子体清洁工艺通过从氨（NH 3）和三氟化氮（NF 3）气体的混合物中产生清洁等离子体，从而将清洁等离子体的产物冷凝在天然氧化物上，从而去除在基底表面上形成的天然氧化物，形成薄膜， 含有六氟硅酸铵（（NH 4）2 SiF 6），并将薄膜从衬底表面上升华。 通过从三氟化氮气体产生第二清洗等离子体，第二等离子体清洗工艺去除剩余的薄膜残留物。 第二清洗等离子体的产物与表面上存在的裸硅几埃反应，形成四氟化硅（SiF4）并提取薄膜的残留物。

公开(公告)号：US20180068890A1

公开(公告)日：2018-03-08

申请号：US15811647

申请日：2017-11-13

Applicant: Applied Materials, Inc.

Inventor： Bhushan N. ZOPE ,  Avgerinos V. GELATOS ,  Bo ZHENG ,  Yu LEI ,  Xinyu FU ,  Srinivas GANDIKOTA ,  Sang-Ho YU ,  Mathew ABRAHAM

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/02 ,  H01L21/48 ,  H01L21/285 ,  H01L29/66

CPC classification number: H01L21/76879 ,  H01L21/02057 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/4846 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76877 ,  H01L21/76883 ,  H01L23/53209 ,  H01L23/5329 ,  H01L29/66621

Abstract: Methods for depositing a contact metal layer in contact structures of a semiconductor device are provided. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a contact metal layer on a substrate and annealing the contact metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the contact metal layer on the substrate, exposing the portion of the contact metal layer to a plasma treatment process, and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the contact metal layer to a plasma treatment process until a predetermined thickness of the contact metal layer is achieved.

公开(公告)号：US20160276214A1

公开(公告)日：2016-09-22

申请号：US14717740

申请日：2015-05-20

Applicant: APPLIED MATERIALS, INC.

Inventor： Xinyu FU ,  Srinivas GANDIKOTA ,  Mei CHANG ,  Seshadri GANGULI ,  Guoqiang JIAN ,  Yixiong YANG ,  Vikash BANTHIA ,  Jonathan BAKKE

IPC: H01L21/768

CPC classification number: H01L21/76816 ,  H01L21/32135 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/76877 ,  H01L21/76879

Abstract: Methods for etching a substrate are provided herein. In some embodiments, a method for etching a substrate disposed within a processing volume of a process chamber includes: (a) exposing a first layer disposed atop the substrate to a first gas comprising tungsten chloride (WCIx) for a first period of time and at a first pressure, wherein x is 5 or 6; (b) purging the processing volume of the first gas using an inert gas for a second period of time; (c) exposing the substrate to a hydrogen-containing gas for a third period of time to etch the first layer after purging the processing volume of the first gas; and (d) purging the processing volume of the hydrogen-containing gas using the inert gas for a fourth period of time.

Abstract translation: 本发明提供蚀刻基板的方法。 在一些实施例中，用于蚀刻设置在处理室的处理体积内的衬底的方法包括：（a）将设置在衬底顶部的第一层暴露于包含氯化钨（WCIx）的第一气体第一时间段 第一压力，其中x为5或6; （b）使用惰性气体吹扫第一气体的处理量第二段; （c）在清洗第一气体的处理容积之后，将衬底暴露于含氢气体持续第三时间以蚀刻第一层; 和（d）使用惰性气体净化含氢气体的处理量第四个时间段。

公开(公告)号：US20160247718A1

公开(公告)日：2016-08-25

申请号：US15145578

申请日：2016-05-03

Applicant: Applied Materials, Inc.

Inventor： Bhushan N. ZOPE ,  Avgerinos V. GELATOS ,  Bo ZHENG ,  Yu LEI ,  Xinyu FU ,  Srinivas GANDIKOTA ,  Sang-ho YU ,  Mathew ABRAHAM

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/02

CPC classification number: H01L21/76879 ,  H01L21/02057 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/4846 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76877 ,  H01L21/76883 ,  H01L23/53209 ,  H01L23/5329 ,  H01L29/66621

Abstract: Methods for depositing a contact metal layer in contact structures of a semiconductor device are provided. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a contact metal layer on a substrate and annealing the contact metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the contact metal layer on the substrate, exposing the portion of the contact metal layer to a plasma treatment process, and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the contact metal layer to a plasma treatment process until a predetermined thickness of the contact metal layer is achieved.

公开(公告)号：US20160322229A1

公开(公告)日：2016-11-03

申请号：US14790862

申请日：2015-07-02

Applicant: APPLIED MATERIALS, INC.

Inventor： Seshadri GANGULI ,  Yixiong YANG ,  Bhushan N. ZOPE ,  Xinyu FU ,  Avgerinos V. GELATOS ,  Guoqiang JIAN ,  Bo ZHENG

IPC: H01L21/285 ,  H01L21/768 ,  H01L21/324

CPC classification number: H01L21/28518 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76855 ,  H01L23/53238 ,  H01L23/53266

Abstract: Methods for selectively depositing a metal silicide layer are provided herein. In some embodiments, a method of selectively depositing a metal silicide layer includes: (a) providing a substrate having a first layer to a process chamber, wherein the first layer comprises a first surface and a feature formed in the first surface comprising an opening defined by one or more sidewalls and a bottom surface wherein the sidewalls comprise one of silicon oxide or silicon nitride and wherein the bottom surface comprises at least one of silicon or germanium; (b) exposing the substrate to a precursor gas comprising a metal halide; (c) purging the precursor gas from the process chamber using an inert gas; (d) exposing the substrate to a silicon containing gas; (e) purging the silicon containing gas from the process chamber using an inert gas; (f) repeating (b)-(e) to selectively deposit a metal silicide along the bottom surface to a predetermined thickness; and (g) annealing the substrate after depositing the metal silicide layer.

Abstract translation: 本文提供了选择性沉积金属硅化物层的方法。 在一些实施例中，选择性沉积金属硅化物层的方法包括：（a）向处理室提供具有第一层的衬底，其中第一层包括第一表面和形成在第一表面中的特征，包括限定的开口 通过一个或多个侧壁和底表面，其中所述侧壁包括氧化硅或氮化硅之一，并且其中所述底表面包括硅或锗中的至少一种; （b）将衬底暴露于包含金属卤化物的前体气体; （c）使用惰性气体从处理室吹扫前体气体; （d）将衬底暴露于含硅气体; （e）使用惰性气体从处理室清洗含硅气体; （f）重复（b） - （e）沿着底表面选择性地沉积金属硅化物至预定厚度; 和（g）在沉积金属硅化物层之后退火衬底。

公开(公告)号：US20170084486A1

公开(公告)日：2017-03-23

申请号：US15364780

申请日：2016-11-30

Applicant: Applied Materials, Inc.

Inventor： Bhushan N. ZOPE ,  Avgerinos V. GELATOS ,  Bo ZHENG ,  Yu LEI ,  Xinyu FU ,  Srinivas GANDIKOTA ,  Sang Ho YU ,  Mathew ABRAHAM

IPC: H01L21/768 ,  H01L21/285

Abstract: Methods for depositing a metal layer in a feature definition of a semiconductor device are provided. In one implementation, a method for depositing a metal layer for forming a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a metal layer on a substrate and annealing the metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the metal layer on the substrate, exposing the portion of the metal layer to either a plasma treatment process or hydrogen annealing process and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the metal layer to either a plasma treatment process or hydrogen annealing process until a predetermined thickness of the metal layer is achieved.