公开(公告)号：US09911594B2

公开(公告)日：2018-03-06

申请号：US15346306

申请日：2016-11-08

Applicant: Applied Materials, Inc.

Inventor： Srinivas D. Nemani ,  Ellie Y. Yieh ,  Ludovic Godet ,  Yin Fan

IPC: H01L21/31 ,  H01L21/02 ,  H01L29/66 ,  H01L21/3115 ,  H01J37/32

CPC classification number: H01L21/02304 ,  H01J37/32357 ,  H01J37/32403 ,  H01J37/32422 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/31155 ,  H01L29/66795 ,  H01L29/66803

Abstract: Methods for forming fin structure with desired materials formed on different locations of the fin structure using a selective deposition process for three dimensional (3D) stacking of fin field effect transistor (FinFET) for semiconductor chips are provided. In one embodiment, a method of forming a structure with desired materials on a substrate includes forming a patterned self-assembled monolayer on a circumference of a structure formed on a substrate, wherein the patterned self-assembled monolayer includes a treated layer formed among a self-assembled monolayer, and performing an atomic layer deposition process to form a material layer predominantly on the self-assembled monolayer from the patterned self-assembled monolayer.

公开(公告)号：US09515166B2

公开(公告)日：2016-12-06

申请号：US14276780

申请日：2014-05-13

Applicant: Applied Materials, Inc.

Inventor： Srinivas D. Nemani ,  Ellie Y. Yieh ,  Ludovic Godet ,  Yin Fan

IPC: H01L21/469 ,  H01L29/66 ,  H01L21/02 ,  H01L21/3115 ,  H01J37/32

CPC classification number: H01L21/02304 ,  H01J37/32357 ,  H01J37/32403 ,  H01J37/32422 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/31155 ,  H01L29/66795 ,  H01L29/66803

Abstract: Methods for forming fin structure with desired materials formed on different locations of the fin structure using a selective deposition process for three dimensional (3D) stacking of fin field effect transistor (FinFET) for semiconductor chips are provided. In one embodiment, a method of forming a structure with desired materials on a substrate includes forming a patterned self-assembled monolayer on a circumference of a structure formed on a substrate, wherein the patterned self-assembled monolayer includes a treated layer formed among a self-assembled monolayer, and performing an atomic layer deposition process to form a material layer predominantly on the self-assembled monolayer from the patterned self-assembled monolayer.

Abstract translation: 提供了使用用于半导体芯片的鳍式场效应晶体管（FinFET）的三维（3D）堆叠的选择性沉积工艺在翅片结构的不同位置形成所需材料的翅片结构的方法。 在一个实施方案中，在衬底上形成具有期望材料的结构的方法包括在形成在衬底上的结构的圆周上形成图案化的自组装单层，其中所述图案化的自组装单层包括在自身中形成的处理层 并且执行原子层沉积工艺，以从图案化的自组装单层形成主要在自组装单层上的材料层。

公开(公告)号：US09754791B2

公开(公告)日：2017-09-05

申请号：US14680879

申请日：2015-04-07

Applicant: Applied Materials, Inc.

Inventor： Ludovic Godet ,  Yin Fan ,  Ellie Y. Yieh ,  Srinivas D. Nemani

IPC: H01L21/44 ,  H01L21/285 ,  H01L21/02 ,  H01L21/027 ,  H01L21/033 ,  H01L21/311 ,  H01L21/3115 ,  H01L21/768 ,  C23C14/04 ,  C23C14/48 ,  C23C16/04 ,  C23C16/455 ,  H01J37/32 ,  H01L21/265

CPC classification number: H01L21/28562 ,  C23C14/04 ,  C23C14/48 ,  C23C16/04 ,  C23C16/45525 ,  H01J37/32412 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32623 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/2236 ,  H01L21/265 ,  H01L21/28568 ,  H01L21/31111 ,  H01L21/31133 ,  H01L21/31155 ,  H01L21/76879

Abstract: Methods for selectively depositing different materials at different locations on a substrate are provided. A selective deposition process may form different materials on different surfaces, e.g., different portions of the substrate, depending on the material properties of the underlying layer being deposited on. Ion implantation processes may be used to modify materials disposed on the substrate. The ions modify surface properties of the substrate to enable the subsequent selective deposition process. A substrate having a mask disposed thereon may be subjected to an on implantation process to modify the mask and surfaces of the substrate exposed by the mask. The mask may be removed which results in a substrate having regions of implanted and non-implanted materials. A subsequent deposition process may be performed to selectively deposit on either the implanted or non-implanted regions of the substrate.

公开(公告)号：US09385219B2

公开(公告)日：2016-07-05

申请号：US14754042

申请日：2015-06-29

Applicant: Applied Materials, Inc.

Inventor： Ellie Y. Yieh ,  Srinivas D. Nemani ,  Ludovic Godet ,  Yin Fan ,  Tristan Ma

IPC: H01L21/02 ,  H01L29/66 ,  H01L21/265 ,  H01L21/223 ,  H01L21/266 ,  C23C16/455

CPC classification number: H01L29/66803 ,  C23C16/0227 ,  C23C16/04 ,  C23C16/455 ,  C23C16/45525 ,  C23C16/45536 ,  H01J37/32403 ,  H01J37/32422 ,  H01J37/32623 ,  H01L21/02057 ,  H01L21/0228 ,  H01L21/02296 ,  H01L21/02315 ,  H01L21/02334 ,  H01L21/0262 ,  H01L21/2236 ,  H01L21/26513 ,  H01L21/266

Abstract: Methods for forming fin structures with desired materials formed on different locations of the fin structure using a selective deposition process for fin field effect transistors (FinFETs) are provided. In one embodiment, a method of forming a structure with desired materials on a substrate includes depositing a first material on a substrate having a three-dimensional (3D) structure formed thereon while performing an implantation process to dope a first region of the 3D structure. The first material may be removed and a second material may be deposited on the 3D structure. The second material may selectively grow on a second region of the 3D structure.

Abstract translation: 提供了使用鳍式场效应晶体管（FinFET）的选择性沉积工艺在翅片结构的不同位置形成所需材料的翅片结构的方法。 在一个实施例中，在衬底上形成具有期望材料的结构的方法包括在执行植入工艺以掺杂3D结构的第一区域的同时，在其上形成有三维（3D）结构的衬底上沉积第一材料。 可以去除第一材料并且可以将第二材料沉积在3D结构上。 第二材料可以选择性地在3D结构的第二区域上生长。