公开(公告)号：US11650506B2

公开(公告)日：2023-05-16

申请号：US16600101

申请日：2019-10-11

Applicant: Applied Materials, Inc.

Inventor： Huixiong Dai ,  Mangesh Bangar ,  Christopher S. Ngai ,  Srinivas D. Nemani ,  Ellie Y. Yieh ,  Steven Hiloong Welch

IPC: G03F7/11 ,  G03F7/20 ,  G03F7/09 ,  G03F7/16 ,  G03F7/40

CPC classification number: G03F7/2022 ,  G03F7/094 ,  G03F7/11 ,  G03F7/168 ,  G03F7/203 ,  G03F7/164 ,  G03F7/40

Abstract: Methods and apparatuses for minimizing line edge/width roughness in lines formed by photolithography are provided. In one example, a method of processing a substrate includes applying a photoresist layer comprising a photoacid generator to on a multi-layer disposed on a substrate, wherein the multi-layer comprises an underlayer formed from an organic material, inorganic material, or a mixture of organic and inorganic materials, exposing a first portion of the photoresist layer unprotected by a photomask to a radiation light in a lithographic exposure process, and applying an electric field or a magnetic field to alter movement of photoacid generated from the photoacid generator substantially in a vertical direction.

公开(公告)号：US10429747B2

公开(公告)日：2019-10-01

申请号：US15811341

申请日：2017-11-13

Applicant: Applied Materials, Inc.

Inventor： Mangesh Bangar ,  Srinivas D. Nemani ,  Steve G. Ghanayem ,  Ellie Y. Yieh

IPC: G03F7/20

Abstract: Embodiments disclosed herein relate to methods and systems for correcting overlay errors on a surface of a substrate. A processor performs a measurement process on a substrate to obtain an overlay error map. The processor determines an order of treatment for the substrate based on the overlay error map. The order of treatment includes one or more treatment processes. The processor generates a process recipe for a treatment process of the one or more treatment processes in the order of treatment. The processor provides the process recipe to a substrate treatment apparatus.

公开(公告)号：US10234772B2

公开(公告)日：2019-03-19

申请号：US15829809

申请日：2017-12-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Mangesh Bangar ,  Bruce E. Adams ,  Kelly E. Hollar ,  Abhilash J. Mayur ,  Huixiong Dai ,  Jaujiun Chen

IPC: G03B27/68 ,  G03F7/20

Abstract: A calibration curve for a wafer comprising a layer on a substrate is determined. The calibration curve represents a local parameter change as a function of a treatment parameter associated with a wafer exposure to a light. The local parameter of the wafer is measured. An overlay error is determined based on the local parameter of the wafer. A treatment map is computed based on the calibration curve to correct the overlay error for the wafer. The treatment map represents the treatment parameter as a function of a location on the wafer.

公开(公告)号：US09864280B2

公开(公告)日：2018-01-09

申请号：US14874353

申请日：2015-10-02

Applicant: Applied Materials Inc.

Inventor： Mangesh Bangar ,  Bruce E. Adams ,  Kelly E. Hollar ,  Abhilash J Mayur ,  Huixiong Dai ,  Jaujiun Chen

IPC: G06F7/20 ,  G03F9/00 ,  G03F7/20

CPC classification number: G03F7/70633

Abstract: A calibration curve for a wafer comprising a layer on a substrate is determined. The calibration curve represents a local parameter change as a function of a treatment parameter associated with a wafer exposure to a light. The local parameter of the wafer is measured. An overlay error is determined based on the local parameter of the wafer. A treatment map is computed based on the calibration curve to correct the overlay error for the wafer. The treatment map represents the treatment parameter as a function of a location on the wafer.

公开(公告)号：US20170097576A1

公开(公告)日：2017-04-06

申请号：US14874353

申请日：2015-10-02

Applicant: Applied Materials Inc.

Inventor： Mangesh Bangar ,  Bruce E. Adams ,  Kelly E. Hollar ,  Abhilash J. Mayur ,  Huixiong Dai ,  Jaujiun Chen

IPC: G03F7/20

CPC classification number: G03F7/70633

Abstract: A calibration curve for a wafer comprising a layer on a substrate is determined. The calibration curve represents a local parameter change as a function of a treatment parameter associated with a wafer exposure to a light. The local parameter of the wafer is measured. An overlay error is determined based on the local parameter of the wafer. A treatment map is computed based on the calibration curve to correct the overlay error for the wafer. The treatment map represents the treatment parameter as a function of a location on the wafer.

公开(公告)号：US09343309B1

公开(公告)日：2016-05-17

申请号：US14657693

申请日：2015-03-13

Applicant: APPLIED MATERIALS, INC.

Inventor： Mangesh Bangar ,  Liyan Miao ,  Huixiong Dai

IPC: H01L21/033 ,  H01L21/471 ,  H01L21/473 ,  H01L21/308

CPC classification number: H01L21/0337 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/32 ,  H01L21/471 ,  H01L21/473

Abstract: Methods of laterally oxidizing features of a patterned substrate are described. A capping layer may be disposed above lateral features to laterally confine the oxidation. The oxidizable features may be material patterned near the optical resolution of a photolithography system using a high-resolution photomask. The oxidizable features may be wider than the spaces between the oxidizable features and may be about three times the width of the spaces. Oxidized portions may be formed on either side of repeated oxidizable features. The unoxidized portions may then be removed as part of a self-aligned double patterning (SADP) process. A gapfill layer deposited thereon may be etched or polished back to form alternating fill and non-sacrificial features.

Abstract translation: 描述了图案化衬底的横向氧化特征的方法。 覆盖层可以设置在横向特征上方以横向限制氧化。 可氧化特征可以是使用高分辨率光掩模的光刻系统的光学分辨率附近的材料图案。 可氧化特征可以比可氧化特征之间的空间宽，并且可以是空间宽度的大约三倍。 可以在重复的可氧化特征的任一侧上形成氧化部分。 然后可以将非氧化部分作为自对准双重图案化（SADP）工艺的一部分移除。 可以将沉积在其上的间隙填充层进行蚀刻或抛光以形成交替的填充和非牺牲特征。