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    Magnetoresistive effect device and method of manufacturing ferromagnetic structure
    2.
    发明申请
    Magnetoresistive effect device and method of manufacturing ferromagnetic structure 审中-公开
    磁阻效应器件及制造铁磁结构的方法

    公开(公告)号：US20070217083A1

    公开(公告)日：2007-09-20

    申请号：US11483565

    申请日：2006-07-11

    申请人： Keiichi Nagasaka ,  Hirotaka Oshima ,  Arata Jogo ,  Yutaka Shimizu

    发明人： Keiichi Nagasaka ,  Hirotaka Oshima ,  Arata Jogo ,  Yutaka Shimizu

    IPC分类号： G11B5/33

    CPC分类号： B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3929 ,  G11B2005/3996

    摘要： A spin valve film has a lamination structure of a pinned layer, a non-magnetic intermediate layer and a free layer. The pinned layer is made of ferromagnetic material and has a fixed magnetization direction. The non-magnetic intermediate layer is made of non-magnetic conductive material. The free layer is made of ferromagnetic material and changes a magnetization direction by external magnetic field. Electrodes let current flow through the spin valve film in a lamination direction. At least one of the pinned layer and the free layer includes a lamination portion of a first layer and a second layer stacked alternately. The first layer has a composition ratio of elements presenting ferromagnetism higher than that in the second layer. The second layer has a composition ratio of elements presenting non-magnetism higher than that in the first layer. The lamination portion includes at least two first layers and at least one second layer.

    摘要翻译： 自旋阀膜具有钉扎层，非磁性中间层和自由层的层压结构。 钉扎层由铁磁材料制成，具有固定的磁化方向。 非磁性中间层由非磁性导电材料制成。 自由层由铁磁材料制成，并通过外部磁场改变磁化方向。 电极使电流在层叠方向上流过自旋阀膜。 被钉扎层和自由层中的至少一个包括交替堆叠的第一层和第二层的层压部分。 第一层具有高于第二层中的铁磁性元素的组成比。 第二层具有高于第一层中的非磁性元素的组成比。 层压部分包括至少两个第一层和至少一个第二层。

    Magnetoresistive effect element, magnetic head, magnetic storage device and magnetic memory device
    4.
    发明申请
    Magnetoresistive effect element, magnetic head, magnetic storage device and magnetic memory device 审中-公开
    磁阻效应元件，磁头，磁存储器件和磁存储器件

    公开(公告)号：US20070048485A1

    公开(公告)日：2007-03-01

    申请号：US11437757

    申请日：2006-05-22

    申请人： Arata Jogo ,  Hirotaka Oshima ,  Keiichi Nagasaka

    发明人： Arata Jogo ,  Hirotaka Oshima ,  Keiichi Nagasaka

    IPC分类号： B32B3/02

    CPC分类号： H01F10/16 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3263 ,  H01F10/3272 ,  H01L27/228 ,  H01L43/10 ,  Y10T428/21

    摘要： A magnetoresistive effect element of a CPP type includes a fixed magnetization layer, a non-magnetic layer and a free magnetization layer formed of CoFeAl. The CoFeAl has a composition falling within a range defined by straight lines connecting points A, B, C, D, E, F and A, in that order, in a ternary composition diagram. The point A is (55, 10, 35), the point B is (50, 15, 35), the point C is (50, 20, 30), the point D is (55, 25, 20), the point E is (60, 25, 15), and the point F is (70, 15, 15), where coordinates of the composition of each point is represented by (Co content, Fe content, Al content). Each content is expressed by atomic percent.

    摘要翻译： CPP型的磁阻效应元件包括固定磁化层，非磁性层和由CoFeAl形成的自由磁化层。 CoFeAl具有在三元组成图中按顺序连接点A，B，C，D，E，F和A的直线限定的范围内的组成。 点A是（55,10,35），点B是（50,15,35），点C是（50,20,30），点D是（55,25,20），点 E是（60,25,15），点F是（70,15,15），其中每个点的组成坐标由（Co含量，Fe含量，Al含量）表示。 每个内容以原子百分比表示。

    Magnetoresistive effect element, magnetic head, and magnetic recording device
    8.
    发明申请
    Magnetoresistive effect element, magnetic head, and magnetic recording device 失效
    磁阻效应元件，磁头和磁记录装置

    公开(公告)号：US20060092577A1

    公开(公告)日：2006-05-04

    申请号：US11072164

    申请日：2005-03-03

    申请人： Keiichi Nagasaka ,  Yutaka Shimizu ,  Atsushi Tanaka

    发明人： Keiichi Nagasaka ,  Yutaka Shimizu ,  Atsushi Tanaka

    IPC分类号： G11B5/33 ,  G11B5/127

    CPC分类号： G11B5/3929 ,  G11B5/39 ,  G11B5/3903 ,  H01L43/08

    摘要： The magnetoresistive effect element comprises an electrode layer 12 of a crystalline material; a base layer 14 of a conductive amorphous material formed over the electrode layer 12, an antiferromagnetic layer 18 of a crystalline material formed over the base layer 14, a ferromagnetic layer 20 formed over the antiferromagnetic layer 18 and having the magnetization direction defined by the antiferromagnetic layer 18, a nonmagnetic intermediate layer 22 formed over the ferromagnetic layer 20, a ferromagnetic layer 24 formed over the nonmagnetic intermediate layer 22 and having the magnetization direction changed by an external magnetic field, and an electrode layer 28 formed over the ferromagnetic layer 24.

    摘要翻译： 磁阻效应元件包括结晶材料的电极层12; 在电极层12上形成的导电非晶材料的基底层14，在基底层14上形成的结晶材料的反铁磁层18，在反铁磁层18上形成的铁磁层20，并且具有由反铁磁性 层18，在铁磁层20上形成的非磁性中间层22，形成在非磁性中间层22上并具有由外部磁场改变的磁化方向的铁磁层24和形成在铁磁层24上的电极层28。

    Current perpendicular-to-the-plane structure spin valve magnetoresistive head
    10.
    发明授权
    Current perpendicular-to-the-plane structure spin valve magnetoresistive head 失效
    当前垂直于平面结构的自旋阀磁阻头

    公开(公告)号：US06781799B2

    公开(公告)日：2004-08-24

    申请号：US09821185

    申请日：2001-03-29

    申请人： Yoshihiko Seyama ,  Atsushi Tanaka ,  Keiichi Nagasaka ,  Yutaka Shimizu

    发明人： Yoshihiko Seyama ,  Atsushi Tanaka ,  Keiichi Nagasaka ,  Yutaka Shimizu

    IPC分类号： G11B5127

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/00 ,  G11B5/012 ,  G11B5/3903 ,  G11B5/3967 ,  H01F10/3254

    摘要： A current perpendicular-to-the-plane (CPP) structure spin valve magnetoresistive (MR) transducer includes an insulating layer. A pinned or free ferromagnetic layer serves to space or isolate the insulating layer from a non-magnetic spacer layer interposed between the pinned and free ferromagnetic layers. The sensing current is allowed to penetrate through the insulating layer. Fine pin-holes generally formed in the insulating layer are supposed to enable migration of electrons through the insulating layer. Similar to the situation in which the sensing current is allowed to flow through a reduced sectional area, a larger variation can be obtained in response to the inversion of the magnetization in the free ferromagnetic layer. The spin valve MR transducer is expected to greatly contribute to realization of a still higher recording density. Moreover, the spin valve MR transducer is also expected to exhibit an electric resistance approximately equal to a tenth part of that of a well-known tunnel junction magnetoresistive (TMR) element. Accordingly, a thermal noise can significantly be suppressed in the spin valve MR transducer as compared with the TMR element.

    摘要翻译： 电流垂直于平面（CPP）结构的自旋阀磁阻（MR）传感器包括绝缘层。 被钉扎或自由的铁磁层用于将绝缘层与置于固定和自由铁磁层之间的非磁性间隔层隔离或隔离。 允许感测电流穿过绝缘层。 通常在绝缘层中形成的细针孔假设能使电子迁移通过绝缘层。 类似于允许感测电流流过减小的截面面积的情况，响应于自由铁磁层中的磁化的反转，可以获得更大的变化。 自旋阀MR换能器有望大大有助于实现更高的记录密度。 此外，自旋阀MR换能器也预期会呈现大约等于公知的隧道结磁阻（TMR）元件的电阻的十分之一的电阻。 因此，与TMR元件相比，自旋阀MR换能器可以显着地抑制热噪声。