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公开(公告)号：US06552364B2
公开(公告)日：2003-04-22
申请号：US09887779
申请日：2001-06-22
IPC分类号： H01L2715
CPC分类号： H01L27/3281 , H01L51/5212 , Y10S257/918
摘要： An organic light emitting device has a layer structure having: a first electrode layer; a second electrode layer parallel to the first electrode layer; and, an electrically conductive and light transmissive layer parallel to the second electrode layer. An electrically insulating layer is disposed between the first and second electrode layers. A layer of organic material is disposed between the second electrode layer and the conductive layer. An aperture in the organic layer provides an electrical connection path between the conductive layer and one of the first and second electrode layers.
摘要翻译： 有机发光器件具有层结构，其具有：第一电极层; 与第一电极层平行的第二电极层; 以及与第二电极层平行的导电和透光层。 电绝缘层设置在第一和第二电极层之间。 有机材料层设置在第二电极层和导电层之间。 有机层中的孔提供导电层与第一和第二电极层之一之间的电连接路径。
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公开(公告)号：US06723591B2
公开(公告)日：2004-04-20
申请号：US10377985
申请日：2003-03-03
IPC分类号： H01L21336
CPC分类号： H01L27/3281 , H01L51/5212 , Y10S257/918
摘要： There is provided a method for fabricating an organic light emitting device. The method includes depositing a first electrode layer on a substrate, depositing an electrically insulating layer on the first electrode layer, depositing a second electrode layer on the insulating layer, depositing an organic layer on the second electrode layer, forming an aperture in the organic layer, depositing a light transmissive electrically conductive layer on the organic layer, and forming an electrical connection between the conductive layer and one of the first and second electrode layers via the aperture.
摘要翻译： 提供了一种制造有机发光器件的方法。 该方法包括在衬底上沉积第一电极层，在第一电极层上沉积电绝缘层，在绝缘层上沉积第二电极层，在第二电极层上沉积有机层，在有机层中形成孔 在所述有机层上沉积透光导电层，以及经由所述孔，在所述导电层与所述第一和第二电极层中的一个之间形成电连接。
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公开(公告)号：US06548961B2
公开(公告)日：2003-04-15
申请号：US09887780
申请日：2001-06-22
申请人： Siegfried Johannes Barth , Tilman A. Beierlein , Siegfried F. Karg , Heike Riel , Walter Heinrich Riess
发明人： Siegfried Johannes Barth , Tilman A. Beierlein , Siegfried F. Karg , Heike Riel , Walter Heinrich Riess
IPC分类号： G09G310
CPC分类号： H01L27/3253
摘要： A method of making a light-emitting device comprises forming a first and second components. The first component has a light-transmissive first substrate, light transmissive first electrode layer on the first substrate, an organic layer on the first electrode, and a second electrode layer on the organic layer. The second component has a second substrate and driver array circuitry on the second substrate. The first component and the second component are joined together with the second electrode of the first component facing the driver array of the second component. An electrical contact is formed between one of the first and second electrode layers of the first component and the driver array circuitry of the second component.
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公开(公告)号：US06580090B2
公开(公告)日：2003-06-17
申请号：US09887639
申请日：2001-06-22
申请人： Siegfried Johannes Barth , Tilman A. Beierlein , Siegfried F. Karg , Heike Riel , Walter Heinrich Riess
发明人： Siegfried Johannes Barth , Tilman A. Beierlein , Siegfried F. Karg , Heike Riel , Walter Heinrich Riess
IPC分类号： H01L3524
CPC分类号： H01L51/525 , H01L27/3244 , H01L51/5212 , H01L51/5234 , H01L51/5243
摘要： A method of making a light-emitting device comprises forming a first and second components. The first component has a first substrate, a first electrode on the first substrate, an organic layer on the first electrode, and a light-transmissive second electrode on the organic layer. The second component has a light-transmissive second substrate, and a light transmissive, electrically conductive layer on the second substrate. The first and second components are joined with the second electrode of the first component facing the conductive layer of the second component. An electrical contact is formed between the second electrode of the first component and the electrically conductive layer of the second component.
摘要翻译： 制造发光器件的方法包括形成第一和第二组分。 第一部件具有第一基板，第一基板上的第一电极，第一电极上的有机层和有机层上的透光第二电极。 第二部件具有透光的第二基板和在第二基板上的透光的导电层。 第一和第二部件与面向第二部件的导电层的第一部件的第二电极接合。 在第一部件的第二电极和第二部件的导电层之间形成电接触。
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公开(公告)号：US08754401B2
公开(公告)日：2014-06-17
申请号：US12870922
申请日：2010-08-30
申请人： Mikael T Bjoerk , Oliver Hayden , Joachim Knoch , Emanuel Loertscher , Heike E Riel , Walter Heinrich Riess , Heinz Schmid
发明人： Mikael T Bjoerk , Oliver Hayden , Joachim Knoch , Emanuel Loertscher , Heike E Riel , Walter Heinrich Riess , Heinz Schmid
CPC分类号： H01L29/7391 , H01L29/0665
摘要： An Impact Ionization Field-Effect Transistor (I-MOS) device in which device degradation caused by hot carrier injection into a gate oxide is prevented. The device includes source, drain, and gate contacts, and a channel between the source and the drain. The channel has a dimension normal to the direction of a charge carrier transport in the channel such that the energy separation of the first two sub-bands equals or exceeds the effective energy band gap of the channel material.
摘要翻译： 防止热载流子注入到栅极氧化物中的器件劣化的冲击电离场效应晶体管（I-MOS）器件。 该器件包括源极，漏极和栅极触点，以及源极和漏极之间的通道。 通道具有与通道中电荷载流子传输方向相垂直的维度，使得前两个子带的能量分离等于或超过通道材料的有效能带隙。
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公开(公告)号：US20090258166A1
公开(公告)日：2009-10-15
申请号：US10595434
申请日：2004-11-09
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C23C16/047 , H01J2237/31738 , H01J2237/31759
摘要： A device for patterning structures on a substrate includes an imaging device having a scanning tip, a light emitting device, and a space around the scanning tip. The space comprises a vapour of a material which is suitable for Chemical Vapour Deposition onto the substrate when decomposed. The light emitting device is adapted to emit a light beam, which has an intensity not capable to decompose the vapour, onto the scanning tip in such a way that an electromagnetic field induced by the light beam near the scanning tip is high enough to decompose the vapour.
摘要翻译： 用于图案化基板上的结构的装置包括具有扫描尖端，发光装置和扫描尖端周围的空间的成像装置。 该空间包括当分解时适于化学气相沉积到基底上的材料的蒸汽。 发光器件适于将具有不能分解蒸汽的强度的光束以这样的方式发射到扫描尖端上，使得由扫描尖端附近的光束感应的电磁场足够高以分解 汽。
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公开(公告)号：US20090146133A1
公开(公告)日：2009-06-11
申请号：US12331675
申请日：2008-12-10
IPC分类号： H01L29/66 , H01L21/205 , H01L21/66
CPC分类号： H01L29/0665 , B82Y10/00 , H01L21/02433 , H01L21/02603 , H01L21/02609 , H01L21/02639 , H01L21/02653 , H01L21/8258 , H01L21/84 , H01L27/1203 , H01L29/0649 , H01L29/0653 , H01L29/0673 , H01L29/7833 , Y10S977/762
摘要： A method for the fabrication of a semiconductor structure that includes areas that have different crystalline orientation and semiconductor structure formed thereby. The disclosed method allows fabrication of a semiconductor structure that has areas of different semiconducting materials. The method employs templated crystal growth using a Vapor-Liquid-Solid (VLS) growth process. A silicon semiconductor substrate having a first crystal orientation direction is etched to have an array of holes into its surface. A separation layer is formed on the inner surface of the hole for appropriate applications. A growth catalyst is placed at the bottom of the hole and a VLS crystal growth process is initiated to form a nanowire. The resultant nanowire crystal has a second different crystal orientation which is templated by the geometry of the hole.
摘要翻译： 一种制造半导体结构的方法，其包括由此形成的具有不同结晶取向和半导体结构的区域。 所公开的方法允许制造具有不同半导体材料的区域的半导体结构。 该方法使用蒸气 - 液体 - 固体（VLS）生长过程进行模板化晶体生长。 蚀刻具有第一晶体取向方向的硅半导体衬底以在其表面上具有孔阵列。 在孔的内表面上形成分离层用于适当的应用。 将生长催化剂置于孔的底部，开始VLS晶体生长过程以形成纳米线。 所得的纳米线晶体具有第二不同的晶体取向，其通过孔的几何形状进行模板化。
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公开(公告)号：US20080011996A1
公开(公告)日：2008-01-17
申请号：US11456591
申请日：2006-07-11
申请人： Johannes Georg Bednorz , Walter Heinrich Riess , Siegfried F. Karg , Gerhard Ingmar Meijer , German Hammerl
发明人： Johannes Georg Bednorz , Walter Heinrich Riess , Siegfried F. Karg , Gerhard Ingmar Meijer , German Hammerl
IPC分类号： H01L29/02
CPC分类号： H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/147 , H01L45/1625 , H01L45/165 , H01L45/1658
摘要： The present invention provides a microelectronic device comprising a resistance structure including a plurality of programmable resistance layers and at least one intermediate layer such that an intermediate layer is placed between two programmable resistance layers. The programmable resistance layers can be individually doped or may consist of different materials. Each programmable resistance layer may be optimized for a specific application. The microelectronic device can be used as a programmable resistor or a memory cell as it exhibits switchable electrical resistance and does not require a time-consuming conditioning process.
摘要翻译： 本发明提供了一种微电子器件，其包括电阻结构，该电阻结构包括多个可编程电阻层和至少一个中间层，使得中间层位于两个可编程电阻层之间。 可编程电阻层可以单独掺杂或由不同的材料组成。 可针对特定应用优化每个可编程电阻层。 微电子器件可以用作可编程电阻器或存储器单元，因为其具有可切换的电阻并且不需要耗时的调节处理。
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9.发明授权公开(公告)号：US08969931B2
公开(公告)日：2015-03-03
申请号：US13503868
申请日：2010-10-18
IPC分类号： H01L29/76 , H01L23/62 , H01L21/336 , H01L29/775 , B82Y10/00 , H01L29/06 , H01L29/40 , H01L29/423 , H01L29/786 , H01L23/29
CPC分类号： H01L29/775 , B82Y10/00 , H01L23/29 , H01L29/0665 , H01L29/402 , H01L29/42392 , H01L29/78606 , H01L29/78621 , H01L29/78696 , H01L2924/0002 , Y10S977/773 , Y10S977/78 , H01L2924/00
摘要： A semiconductor device and a method for fabricating the semiconductor device. The device includes: a doped semiconductor having a source region, a drain region, a channel between the source and drain regions, and an extension region between the channel and each of the source and drain regions; a gate formed on the channel; and a screening coating on each of the extension regions. The screening coating includes: (i) an insulating layer that has a dielectric constant that is no greater than about half that of the extension regions and is formed directly on the extension regions, and (ii) a screening layer on the insulating layer, where the screening layer screens the dopant ionization potential in the extension regions to inhibit dopant deactivation.
摘要翻译： 一种半导体器件及其制造方法。 该器件包括：掺杂半导体，其具有源极区，漏极区，源极和漏极区之间的沟道，以及沟道和源极和漏极区中的每一个之间的延伸区域; 在通道上形成的门; 以及在每个延伸区域上的筛选涂层。 屏蔽涂层包括：（i）绝缘层，其介电常数不大于延伸区域的一半，并且直接形成在延伸区域上，和（ii）绝缘层上的屏蔽层，其中 屏蔽层屏蔽延伸区域中的掺杂剂离子化电位以抑制掺杂剂失活。
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公开(公告)号：US07947580B2
公开(公告)日：2011-05-24
申请号：US12331675
申请日：2008-12-10
CPC分类号： H01L29/0665 , B82Y10/00 , H01L21/02433 , H01L21/02603 , H01L21/02609 , H01L21/02639 , H01L21/02653 , H01L21/8258 , H01L21/84 , H01L27/1203 , H01L29/0649 , H01L29/0653 , H01L29/0673 , H01L29/7833 , Y10S977/762
摘要： A method for the fabrication of a semiconductor structure that includes areas that have different crystalline orientation and semiconductor structure formed thereby. The disclosed method allows fabrication of a semiconductor structure that has areas of different semiconducting materials. The method employs templated crystal growth using a Vapor-Liquid-Solid (VLS) growth process. A silicon semiconductor substrate having a first crystal orientation direction is etched to have an array of holes into its surface. A separation layer is formed on the inner surface of the hole for appropriate applications. A growth catalyst is placed at the bottom of the hole and a VLS crystal growth process is initiated to form a nanowire. The resultant nanowire crystal has a second different crystal orientation which is templated by the geometry of the hole.
摘要翻译： 一种制造半导体结构的方法，其包括由此形成的具有不同结晶取向和半导体结构的区域。 所公开的方法允许制造具有不同半导体材料的区域的半导体结构。 该方法使用蒸气 - 液体 - 固体（VLS）生长过程进行模板化晶体生长。 蚀刻具有第一晶体取向方向的硅半导体衬底以在其表面上具有孔阵列。 在孔的内表面上形成分离层用于适当的应用。 将生长催化剂置于孔的底部，开始VLS晶体生长过程以形成纳米线。 所得的纳米线晶体具有第二不同的晶体取向，其通过孔的几何形状进行模板化。
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