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    SULFUR-CARBON COMPOSITE CATHODES FOR RECHARGEABLE LITHIUM-SULFUR BATTERIES AND METHODS OF MAKING THE SAME
    4.
    发明申请
    SULFUR-CARBON COMPOSITE CATHODES FOR RECHARGEABLE LITHIUM-SULFUR BATTERIES AND METHODS OF MAKING THE SAME 审中-公开
    用于可充电的锂硫电池的硫化碳复合阴极及其制造方法

    公开(公告)号：US20130164625A1

    公开(公告)日：2013-06-27

    申请号：US13335486

    申请日：2011-12-22

    申请人： Arumugam Manthiram ,  Yu-Sheng Su

    发明人： Arumugam Manthiram ,  Yu-Sheng Su

    IPC分类号： H01M4/583 ,  C01B31/26 ,  B82Y30/00 ,  B82Y40/00

    CPC分类号： H01M4/625 ,  B82Y30/00 ,  B82Y40/00 ,  H01M4/13 ,  H01M4/139 ,  H01M4/38 ,  H01M10/052

    摘要： This disclosure relates to a method of synthesizing a sulfur-carbon composite comprising forming an aqueous solution of a sulfur-based ion and carbon source, adding an acid to the aqueous solution such that the sulfur-based ion nucleates as sulfur upon the surface of the carbon source; and forming an electrically conductive network from the carbon source. The sulfur-carbon composite includes the electrically conductive network with nucleated sulfur. It also relates to a sulfur-carbon composite comprising a carbon-based material, configured such that the carbon-based material creates an electrically conductive network and a plurality of sulfur granules in electrical communication with the electrically conductive network, and configured such that the sulfur granules are reversibly reactive with alkali metal. It further relates to batteries comprising a cathode comprising such a carbon-based material along with an anode and an electrolyte.

    摘要翻译： 本公开涉及一种合成硫 - 碳复合材料的方法，包括形成硫基离子和碳源的水溶液，向该水溶液中加入酸，使得硫基离子在硫酸的表面上成硫 碳源 以及从碳源形成导电网络。 硫 - 碳复合物包括具有有核硫的导电网络。 它还涉及包含碳基材料的硫 - 碳复合材料，其构造成使得碳基材料形成导电网络和与导电网络电连通的多个硫颗粒，并且构造成使得硫 颗粒与碱金属可逆地反应。 它还涉及包含阴极的电池，包括这种碳基材料以及阳极和电解质。

    WET PROCESSING APPARATUSES
    6.
    发明申请
    WET PROCESSING APPARATUSES 有权
    湿处理设备

    公开(公告)号：US20080295874A1

    公开(公告)日：2008-12-04

    申请号：US11754843

    申请日：2007-05-29

    申请人： Kuang-Nian Tang ,  Yang-Kai Fan ,  Yu-Sheng Su ,  Ming-Tsao Chiang ,  Yu-Cheng Shih

    发明人： Kuang-Nian Tang ,  Yang-Kai Fan ,  Yu-Sheng Su ,  Ming-Tsao Chiang ,  Yu-Cheng Shih

    IPC分类号： B08B3/10

    CPC分类号： H01L21/67023 ,  H01L21/67057

    摘要： A semiconductor apparatus includes a first tank configured to accommodate a first fluid. A second tank is configured to receive overflow of the first fluid into an upper portion of the second tank and to accommodate a second fluid. A cycling system including a first conduit is configured between the first tank and the second tank. The first conduit has an end substantially below a surface of the second fluid. A fluid providing system including a second conduit is fluidly coupled to the second tank and configured to provide the second fluid into the second tank. The second conduit has an end substantially below the surface of the second fluid. An overflow system is coupled to the second tank and configured to remove an upper portion of the second fluid when the surface of the second fluid is substantially equal to or higher than a pre-determined level.

    摘要翻译： 半导体装置包括配置成容纳第一流体的第一罐。 第二罐被配置为接收第一流体溢流到第二罐的上部并容纳第二流体。 包括第一管道的循环系统配置在第一罐和第二罐之间。 第一导管具有基本上低于第二流体表面的端部。 包括第二导管的流体提供系统流体地联接到第二罐并且被配置为将第二流体提供到第二罐中。 第二导管具有基本上低于第二流体表面的端部。 溢流系统联接到第二罐，并且构造成当第二流体的表面基本上等于或高于预定水平时，去除第二流体的上部。

    SILICON WAFER RECLAMATION PROCESS
    7.
    发明申请
    SILICON WAFER RECLAMATION PROCESS 有权
    硅胶回收工艺

    公开(公告)号：US20110062375A1

    公开(公告)日：2011-03-17

    申请号：US12952540

    申请日：2010-11-23

    申请人： Tai-Yung Yu ,  Yu-Sheng Su ,  Li-Te Hsu ,  Jin-Lin Liang ,  Pin-Chia Su

    发明人： Tai-Yung Yu ,  Yu-Sheng Su ,  Li-Te Hsu ,  Jin-Lin Liang ,  Pin-Chia Su

    IPC分类号： C09K13/08

    CPC分类号： H01L21/02032 ,  H01L21/31111

    摘要： An etchant for removing a porous low-k dielectric layer on a semiconductor substrate includes a hydrofluoric acid-based solvent, a dilating additive for dilating the pores in the porous low-k dielectric, and a passivating additive that forms a passivation layer at the interface between the low-k dielectric layer and the semiconductor substrate.

    摘要翻译： 用于去除半导体衬底上的多孔低k电介质层的蚀刻剂包括氢氟酸溶剂，用于膨胀多孔低k电介质中的孔的扩张添加剂和在界面处形成钝化层的钝化添加剂 在低k电介质层和半导体衬底之间。

    SILICON WAFER RECLAMATION PROCESS
    8.
    发明申请
    SILICON WAFER RECLAMATION PROCESS 有权
    硅胶回收工艺

    公开(公告)号：US20090111269A1

    公开(公告)日：2009-04-30

    申请号：US11931796

    申请日：2007-10-31

    申请人： Tai-Yung Yu ,  Yu-Sheng Su ,  Li-Te Hsu ,  Jin-Lin Liang ,  Pin-Chia Su

    发明人： Tai-Yung Yu ,  Yu-Sheng Su ,  Li-Te Hsu ,  Jin-Lin Liang ,  Pin-Chia Su

    IPC分类号： H01L21/311 ,  C09K13/08

    CPC分类号： H01L21/02032 ,  H01L21/31111

    摘要： By exposing a process control wafer having a porous low-k-dielectric layer thereon in an HF-based low-k dielectric etching solvent comprising a dilating additive and a passivating additive, the pores in the low-k dielectric layer are dilated some of which connect with one another to form one or more continuous channels extending through the thickness of the dielectric layer and allowing the HF-based solvent to reach down to the substrate. Then the passivating additive component of the HF-based etching solvent forms a passivation layer at the dielectric layer and the substrate interface that protects substrate from the HF-based etchant.

    摘要翻译： 通过在包含扩张添加剂和钝化添加剂的基于HF的低k电介质蚀刻溶剂中暴露其上具有多孔低k电介质层的工艺控制晶片，低k电介质层中的孔被扩大其中一些 彼此连接以形成延伸穿过介电层厚度的一个或多个连续通道，并允许基于HF的溶剂到达基底。 然后，基于HF的蚀刻溶剂的钝化添加剂组分在介电层和衬底界面处形成钝化层，保护衬底免受基于HF的蚀刻剂的影响。

    Silicon wafer reclamation process
    9.
    发明授权
    Silicon wafer reclamation process 有权
    硅片回收工艺

    公开(公告)号：US07851374B2

    公开(公告)日：2010-12-14

    申请号：US11931796

    申请日：2007-10-31

    申请人： Tai-Yung Yu ,  Yu-Sheng Su ,  Li-Te Hsu ,  Jin-Lin Liang ,  Pin-Chia Su

    发明人： Tai-Yung Yu ,  Yu-Sheng Su ,  Li-Te Hsu ,  Jin-Lin Liang ,  Pin-Chia Su

    IPC分类号： H01L21/302 ,  H01L21/461

    CPC分类号： H01L21/02032 ,  H01L21/31111

    摘要： By exposing a process control wafer having a porous low-k-dielectric layer thereon in an HF-based low-k dielectric etching solvent comprising a dilating additive and a passivating additive, the pores in the low-k dielectric layer are dilated some of which connect with one another to form one or more continuous channels extending through the thickness of the dielectric layer and allowing the HF-based solvent to reach down to the substrate. Then the passivating additive component of the HF-based etching solvent forms a passivation layer at the dielectric layer and the substrate interface that protects substrate from the HF-based etchant.

    摘要翻译： 通过在包含扩张添加剂和钝化添加剂的基于HF的低k电介质蚀刻溶剂中暴露其上具有多孔低k电介质层的工艺控制晶片，低k电介质层中的孔被扩大其中一些 彼此连接以形成延伸穿过介电层厚度的一个或多个连续通道，并允许基于HF的溶剂到达基底。 然后，基于HF的蚀刻溶剂的钝化添加剂组分在介电层和衬底界面处形成钝化层，保护衬底免受基于HF的蚀刻剂的影响。