公开(公告)号：US07052971B2

公开(公告)日：2006-05-30

申请号：US10193143

申请日：2002-07-12

申请人： Yukio Nishiyama ,  Hirotaka Ogihara ,  Rempei Nakata

发明人： Yukio Nishiyama ,  Hirotaka Ogihara ,  Rempei Nakata

IPC分类号： H01L21/762

CPC分类号： H01L21/76802 ,  H01L21/31055 ,  H01L21/3125 ,  H01L21/76224 ,  H01L21/76831 ,  H01L21/76837

摘要： A method for manufacturing a semiconductor device of the present invention includes, forming a first silicon oxide film by HDP-CVD so as to bury a recess portion in a three-dimensional portion formed in a surface region of a semiconductor workpiece to a position lower than an upper surface of the recess portion, and forming a second silicon oxide film by SOG on the first silicon oxide film so as to fill the recess portion.

公开(公告)号：US07446061B2

公开(公告)日：2008-11-04

申请号：US11633484

申请日：2006-12-05

申请人： Hiroshi Sato ,  Rempei Nakata ,  Yukio Nishiyama ,  Taketo Matsuda

发明人： Hiroshi Sato ,  Rempei Nakata ,  Yukio Nishiyama ,  Taketo Matsuda

IPC分类号： H01L21/44 ,  H01L21/31

CPC分类号： H01L21/31612 ,  H01J37/321 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31625 ,  H01L21/76224 ,  H01L21/76837

摘要： A semiconductor substrate with a groove is placed in a plasma generating reaction chamber. Silicon, oxygen and hydrogen containing gases are introduced into the reaction chamber as process gases. A ratio of a gas flow of the hydrogen containing gas except the silicon containing gas to a total gas flow of the silicon containing gas and the oxygen containing gas defines a first gas-flow ratio. A ratio of a gas flow of the oxygen containing gas to that of the silicon containing gas defines a second gas-flow ratio. The first and second gas-flow ratios establish a linear function for a critical condition. A cluster formation condition is set up by relatively increasing the first gas-flow ratio while relatively decreasing the second gas-flow ratio with respect to the critical condition. A cluster suppression condition is also set up by relatively decreasing the first gas-flow ratio while relatively increasing the second gas-flow ratio with respect to the critical condition. The process gases are supplied to the reaction chamber under the cluster formation condition and under the cluster suppression condition, alternately, to form an insulating film buried in the groove.

摘要翻译： 将具有凹槽的半导体衬底放置在等离子体产生反应室中。 硅，氧和含氢气体作为工艺气体被引入到反应室中。 含硅气体以外的含氢气体的气体流量与含硅气体和含氧气体的总气体流量的比率定义为第一气体流量比。 含氧气体的气体流量与含硅气体的气体流量的比定义第二气体流量比。 第一和第二气体流量比建立了关键条件的线性函数。 通过相对增加第一气体流量比来建立簇形成条件，同时相对于临界条件相对降低第二气体流量比。 通过相对地降低第一气体流量比同时相对于临界条件相对增加第二气体流量比也建立了集束抑制条件。 处理气体在簇形成条件下并在簇抑制条件下交替地供给到反应室，以形成埋在槽中的绝缘膜。

公开(公告)号：US20080009143A1

公开(公告)日：2008-01-10

申请号：US11819275

申请日：2007-06-26

申请人： Nobuhide Yamada ,  Rempei Nakata ,  Yukio Nishiyama

发明人： Nobuhide Yamada ,  Rempei Nakata ,  Yukio Nishiyama

IPC分类号： H01L21/31

CPC分类号： H01L21/31612 ,  C23C16/045 ,  C23C16/402 ,  C23C16/463 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/76224 ,  H01L21/76834 ,  H01L21/76837

摘要： Disclosed is a method of forming a silicon oxide layer comprising: supplying at least a gas containing Si as a raw gas to a semiconductor substrate having a recess formed on its surface to form a primary reactant on the surface, then performing dehydration condensation to form a silicon oxide layer above the semiconductor substrate; removing a part of the silicon oxide layer until a portion of the silicon oxide layer formed in the recess that has a lower density than the silicon oxide layer formed in a vicinity of the surface is at least partially exposed; and supplying a gas containing Si to the silicon oxide layer having a lower density.

摘要翻译： 公开了一种形成氧化硅层的方法，包括：至少将含有作为原料气体的Si的气体供给到在其表面上形成有凹部的半导体衬底，以在表面上形成主反应物，然后进行脱水缩合形成 半导体衬底上的氧化硅层; 去除氧化硅层的一部分直到形成在凹陷中的形成在表面附近形成的氧化硅层的密度较低的氧化硅层的部分至少部分地露出; 并将含Si的气体供给到具有较低密度的氧化硅层。

公开(公告)号：US20070128865A1

公开(公告)日：2007-06-07

申请号：US11633484

申请日：2006-12-05

申请人： Hiroshi Sato ,  Rempei Nakata ,  Yukio Nishiyama ,  Taketo Matsuda

发明人： Hiroshi Sato ,  Rempei Nakata ,  Yukio Nishiyama ,  Taketo Matsuda

IPC分类号： H05H1/24 ,  H01L21/44 ,  H01L21/31

CPC分类号： H01L21/31612 ,  H01J37/321 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31625 ,  H01L21/76224 ,  H01L21/76837

摘要： A semiconductor substrate with a groove is placed in a plasma generating reaction chamber. Silicon, oxygen and hydrogen containing gases are introduced into the reaction chamber as process gases. A ratio of a gas flow of the hydrogen containing gas except the silicon containing gas to a total gas flow of the silicon containing gas and the oxygen containing gas defines a first gas-flow ratio. A ratio of a gas flow of the oxygen containing gas to that of the silicon containing gas defines a second gas-flow ratio. The first and second gas-flow ratios establish a linear function for a critical condition. A cluster formation condition is set up by relatively increasing the first gas-flow ratio while relatively decreasing the second gas-flow ratio with respect to the critical condition. A cluster suppression condition is also set up by relatively decreasing the first gas-flow ratio while relatively increasing the second gas-flow ratio with respect to the critical condition. The process gases are supplied to the reaction chamber under the cluster formation condition and under the cluster suppression condition, alternately, to form an insulating film buried in the groove.

摘要翻译： 将具有凹槽的半导体衬底放置在等离子体产生反应室中。 硅，氧和含氢气体作为工艺气体被引入到反应室中。 含硅气体以外的含氢气体的气体流量与含硅气体和含氧气体的总气体流量的比率定义为第一气体流量比。 含氧气体的气体流量与含硅气体的气体流量的比定义第二气体流量比。 第一和第二气体流量比建立了关键条件的线性函数。 通过相对增加第一气体流量比来建立簇形成条件，同时相对于临界条件相对降低第二气体流量比。 通过相对地降低第一气体流量比同时相对于临界条件相对增加第二气体流量比也建立了集束抑制条件。 处理气体在簇形成条件下并在簇抑制条件下交替地供给到反应室，以形成埋在槽中的绝缘膜。

公开(公告)号：US5641581A

公开(公告)日：1997-06-24

申请号：US411994

申请日：1995-03-28

申请人： Yukio Nishiyama ,  Rempei Nakata ,  Nobuo Hayasaka ,  Haruo Okano ,  Riichirou Aoki ,  Takahito Nagamatsu ,  Akemi Satoh ,  Masao Toyosaki ,  Hitoshi Ito

发明人： Yukio Nishiyama ,  Rempei Nakata ,  Nobuo Hayasaka ,  Haruo Okano ,  Riichirou Aoki ,  Takahito Nagamatsu ,  Akemi Satoh ,  Masao Toyosaki ,  Hitoshi Ito

IPC分类号： C23C16/40 ,  H01L21/31 ,  H01L21/311 ,  H01L21/316 ,  H01L21/768 ,  H01L23/532 ,  B32B9/00

CPC分类号： H01L21/02274 ,  H01L21/02131 ,  H01L21/0214 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31111 ,  H01L21/31625 ,  H01L21/31629 ,  H01L21/76801 ,  H01L21/76829 ,  H01L21/76834 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002

摘要： Disclosed is a method of manufacturing a semiconductor device, in which a silicon oxide film containing fluorine, said film exhibiting a low dielectric constant and a low hygroscopicity and acting as an insulating film for electrically isolating wirings included in a semiconductor device, is formed by a plasma CVD method using a source gas containing at least silicon, oxygen and fluorine, under the conditions that the relationship between the gas pressure P (Torr) and the ion energy E (eV) satisfies formula A given below:P.gtoreq.5.times.10.sup.-4, P.ltoreq.10.sup.-1.times.10.sup.-E/45( A)and the relationship between the ion energy E (eV) and the plasma density D (/cm.sup.3) satisfies the formula B given below:D.gtoreq.2.times.10.sup.11.times.10.sup.-E/45, 10 .ltoreq.E(B)

摘要翻译： 公开了一种制造半导体器件的方法，其中含有氟的氧化硅膜，所述膜具有低介电常数和低吸湿性并且用作用于电绝缘包括在半导体器件中的布线的绝缘膜，其通过 在气体压力P（Torr）和离子能量E（eV）之间的关系满足下面给出的公式A的条件下，使用至少含有硅，氧和氟的源气体的等离子体CVD方法：P> = 5×10- 4，P <= 10-1×10-E / 45（A），离子能E（eV）与等离子体密度D（/ cm 3）之间的关系满足以下公式B：D> / = 2x1011×10-E / 45,10（E）（B）

公开(公告)号：US5429995A

公开(公告)日：1995-07-04

申请号：US94423

申请日：1993-07-16

申请人： Yukio Nishiyama ,  Rempei Nakata ,  Nobuo Hayasaka ,  Haruo Okano ,  Riichirou Aoki ,  Takahito Nagamatsu ,  Akemi Satoh ,  Masao Toyosaki ,  Hitoshi Ito

发明人： Yukio Nishiyama ,  Rempei Nakata ,  Nobuo Hayasaka ,  Haruo Okano ,  Riichirou Aoki ,  Takahito Nagamatsu ,  Akemi Satoh ,  Masao Toyosaki ,  Hitoshi Ito

IPC分类号： C23C16/40 ,  H01L21/31 ,  H01L21/311 ,  H01L21/316 ,  H01L21/768 ,  H01L23/532 ,  H01L21/02

CPC分类号： H01L21/02274 ,  H01L21/02131 ,  H01L21/0214 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31111 ,  H01L21/31625 ,  H01L21/31629 ,  H01L21/76801 ,  H01L21/76829 ,  H01L21/76834 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002

摘要： Disclosed is a method of manufacturing a semiconductor device, in which a silicon oxide film containing fluorine, said film exhibiting a low dielectric constant and a low hygroscopicity and acting as an insulating film for electrically isolating wirings included in a semiconductor device, is formed by a plasma CVD method using a source gas containing at least silicon, oxygen and fluorine, under the conditions that the relationship between the gas pressure P (Torr) and the ion energy E (eV) satisfies formula A given below:P.gtoreq.5.times.10.sup.-4,P.ltoreq.10.sup.-1 .times.10.sup.-E/45(A)and the relationship between the ion energy E (ev) and the plasma density D (/cm.sup.3) satisfies the formula B given below:D.gtoreq.2.times.10.sup.11 .times.10.sup.-E/45, 10.ltoreq.E(B)

摘要翻译： 公开了一种制造半导体器件的方法，其中含有氟的氧化硅膜，所述膜具有低介电常数和低吸湿性并且用作用于电绝缘包括在半导体器件中的布线的绝缘膜，其通过 在气体压力P（Torr）和离子能量E（eV）之间的关系满足下面给出的公式A的条件下，使用至少含有硅，氧和氟的源气体的等离子体CVD方法：P> = 5×10- 如图4所示，P / = 2x1011×10-E / 45,10（E）（B）

公开(公告)号：US08071157B2

公开(公告)日：2011-12-06

申请号：US11987653

申请日：2007-12-03

申请人： Shinichi Ito ,  Tatsuhiko Ema ,  Kei Hayasaki ,  Rempei Nakata ,  Nobuhide Yamada ,  Katsuya Okumura

发明人： Shinichi Ito ,  Tatsuhiko Ema ,  Kei Hayasaki ,  Rempei Nakata ,  Nobuhide Yamada ,  Katsuya Okumura

IPC分类号： B05D3/12

CPC分类号： H01L21/6715 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/288 ,  H01L21/31633

摘要： There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10−5 qγ (mm) given with respect to a surface tension γ (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5×10−5 (m·sec/N).

摘要翻译： 公开了一种成膜方法，其特征在于，连续地排出通过设置在喷嘴中的排出口将调整后的液体以一定量向基板扩散至基板，使喷嘴和基板相对移动， 将其供给到基板上形成液膜，其中喷嘴的排出口与基板的距离h设定为2mm以上且小于5×10 -5qγ（mm） ）相对于溶液的表面张力γ（N / m）给出，通过排出口连续排出的溶液的排出速度q（m / sec），常数为5×10-5（m·sec / N）。

公开(公告)号：US20050022732A1

公开(公告)日：2005-02-03

申请号：US10927155

申请日：2004-08-27

申请人： Shinichi Ito ,  Tatsuhiko Ema ,  Kei Hayasaki ,  Rempei Nakata ,  Nobuhide Yamada ,  Katsuya Okumura

发明人： Shinichi Ito ,  Tatsuhiko Ema ,  Kei Hayasaki ,  Rempei Nakata ,  Nobuhide Yamada ,  Katsuya Okumura

IPC分类号： H01L21/027 ,  H01L21/00 ,  H01L21/20 ,  H01L21/288 ,  H01L21/316 ,  B05C5/00 ,  B05B7/00 ,  B05B13/02 ,  B05C15/00

CPC分类号： H01L21/6715 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/288 ,  H01L21/31633

摘要： There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10−5 qγ (mm) given with respect to a surface tension γ (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5×10−5 (m·sec/N).

摘要翻译： 公开了一种成膜方法，其特征在于，连续地排出通过设置在喷嘴中的排出口将调整后的液体以一定量向基板扩散至基板，使喷嘴和基板相对移动， 将供给的溶液供给到基板上以形成液膜，其中喷嘴的排出口与基板之间的距离h被设定为不小于2mm，并且在小于5×10 -5 qmam ）相对于溶液的表面张力γ（N / m）给出，通过排出口连续排出的溶液的排出速度q（m / sec）和常数为5×10 -5（m.sec / N）。

公开(公告)号：US06800569B2

公开(公告)日：2004-10-05

申请号：US10352954

申请日：2003-01-29

申请人： Shinichi Ito ,  Tatsuhiko Ema ,  Kei Hayasaki ,  Rempei Nakata ,  Nobuhide Yamada ,  Katsuya Okumura

发明人： Shinichi Ito ,  Tatsuhiko Ema ,  Kei Hayasaki ,  Rempei Nakata ,  Nobuhide Yamada ,  Katsuya Okumura

IPC分类号： H01L2131

CPC分类号： H01L21/6715 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/288 ,  H01L21/31633

摘要： There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10−5 q&ggr; (mm) given with respect to a surface tension &ggr; (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5×10−5 (m·sec/N).

摘要翻译： 公开了一种成膜方法，其特征在于，连续地排出通过设置在喷嘴中的排出口将调整后的液体以一定量向基板扩散至基板，使喷嘴和基板相对移动， 将供给的溶液供给到基板上以形成液膜，其中喷嘴的排出口与基板之间的距离h被设定为不小于2mm，并且在小于5×10 -5 qmam ）相对于溶液的表面张力γ（N / m）给出，通过排出口连续排出的溶液的排出速度q（m / sec）和常数为5×10 -5（m.sec / N）。

公开(公告)号：US06566261B2

公开(公告)日：2003-05-20

申请号：US09946601

申请日：2001-09-06

申请人： Hiroshi Ikegami ,  Rempei Nakata ,  Takashi Yoda ,  Nobuo Hayasaka ,  Yoshimi Hisatsune

发明人： Hiroshi Ikegami ,  Rempei Nakata ,  Takashi Yoda ,  Nobuo Hayasaka ,  Yoshimi Hisatsune

IPC分类号： H01L2144

CPC分类号： H01L23/53238 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02307 ,  H01L21/02315 ,  H01L21/3122 ,  H01L21/76838 ,  H01L24/11 ,  H01L2224/13099 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2924/00011 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/04953 ,  H01L2924/12042 ,  H01L2924/19043 ,  H01L2924/30105 ,  Y10S438/959 ,  H01L2924/00 ,  H01L2924/01005 ,  H01L2924/01004 ,  H01L2924/00014

摘要： There is provided a semiconductor device including a semiconductor substrate and a conductive layer above the semiconductor substrate, wherein the conductive layer contains copper, a surface region of the conductive layer contains at least one of C—H bonds and C—C bonds, and a total amount of C atoms forming the C—H bonds and C atoms forming the C—C bonds in the surface region is 30 atomic % or more of a whole amount of elements in the surface region.