公开(公告)号：US6118799A

公开(公告)日：2000-09-12

申请号：US817602

申请日：1997-06-10

申请人： Atsushi Okubo ,  Yoshikazu Yamada ,  Tsuyoshi Fujimoto ,  Satoru Okada ,  Yumi Naito ,  Kiyofumi Muro

发明人： Atsushi Okubo ,  Yoshikazu Yamada ,  Tsuyoshi Fujimoto ,  Satoru Okada ,  Yumi Naito ,  Kiyofumi Muro

IPC分类号： H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/343 ,  H01S3/085

CPC分类号： B82Y20/00 ,  H01S5/2231 ,  H01S5/2238 ,  H01S5/204 ,  H01S5/222 ,  H01S5/3432

摘要： A semiconductor device including a buffer layer 32 on n-GaAs, a clad layer 31, a wave guide layer 30 and a carrier block layer 29 of n-AlGaAs, a side barrier layer 28 of non-doped AlGaAs, an active layer 27 which is formed by two non-doped GaAs quantum well layers and a barrier layer of AlGaAs, a side barrier layer 26 of non-doped AlGaAs, a carrier block layer 25, a wave guide layer 23 and a clad layer 22 of p-AlGaAs, and a cap layer 21 of p-GaAs are grown in this order. Inside the wave guide layer 23, current blocking layers 24 having a lower refractive index and higher Al-composition than that of the wave guide layer and sandwich a strip-shaped active region 34. This creates a refractive index difference between the active region 34 and buried regions 33 in which each of the current blocking layers 24 exists, thereby forming a refractive index guide structure. Thus, it is possible to obtain a high-output semiconductor laser device of the refractive index guided type which is easy to manufacture.

摘要翻译： PCT No.PCT / JP95 / 02118 Sec。 371日期：1997年6月10日 102（e）日期1997年6月10日PCT提交1995年10月16日PCT公布。 WO96 / 12328 PCT出版物 日期：1996年04月25日包括n-GaAs上的缓冲层32，n-AlGaAs的覆盖层31，波导层30和载流子层29的半导体器件，非掺杂AlGaAs的侧面阻挡层28， 由两个非掺杂GaAs量子阱层和AlGaAs的势垒层，非掺杂AlGaAs的侧阻层26，载流子阻挡层25，波导层23和覆盖层22形成的有源层27 的p-AlGaAs，并且p-GaAs的覆盖层21依次生长。 在波导层23内，电流阻挡层24具有比波导层低的折射率和更高的Al组分，并且夹持条形有源区域34.这在活性区域34和 其中存在每个电流阻挡层24的埋入区域33，从而形成折射率引导结构。 因此，可以获得易于制造的折射率导向型的高输出半导体激光器件。

公开(公告)号：US06546032B1

公开(公告)日：2003-04-08

申请号：US09644080

申请日：2000-08-23

申请人： Yasuo Oeda ,  Satoru Okada ,  Kouichi Igarashi ,  Yumi Naito ,  Kiyofumi Muro ,  Takeshi Koiso ,  Yoshikazu Yamada ,  Atsushi Okubo ,  Tsuyoshi Fujimoto

发明人： Yasuo Oeda ,  Satoru Okada ,  Kouichi Igarashi ,  Yumi Naito ,  Kiyofumi Muro ,  Takeshi Koiso ,  Yoshikazu Yamada ,  Atsushi Okubo ,  Tsuyoshi Fujimoto

IPC分类号： H01S500

CPC分类号： B82Y20/00 ,  H01S5/20 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/34313 ,  H01S5/34353

摘要： On a substrate of n-type GaAs are sequentially formed an n-type cladding layer (AlGaAs, Al content x=0.07, thickness t=2.86 &mgr;m), an n-type optical waveguide layer (GaAs, t=0.49 &mgr;m), an n-type carrier blocking layer (AlGaAs, x=0.40, t=0.03 &mgr;m), an active layer (composed of an In0.18Ga0.82As quantum well layer and a GaAs barrier layer), a p-type carrier blocking layer (AlGaAs, x=0.40, t=0.03 &mgr;m), a p-type optical waveguide layer (GaAs, t=0.49 &mgr;m), a p-type cladding layer (AlGaAs, x=0.20, t=1.08 &mgr;m), and a p-type cap layer (GaAs) in which a pair of n-type current blocking layers (GaAs) are buried. With this construction, the occurrence of a wavelength spit due to a higher-order mode can be inhibited thereby stabilizing a higher power operation.

摘要翻译： 在n型GaAs衬底上依次形成n型覆层（AlGaAs，Al含量x = 0.07，厚度t =2.86μm），n型光波导层（GaAs，t =0.49μm）， n型载流子阻挡层（AlGaAs，x = 0.40，t =0.03μm），有源层（由In0.18Ga0.82As量子阱层和GaAs势垒层构成），p型载流子阻挡层（AlGaAs ，p型光波导层（GaAs，t =0.49μm），p型覆层（AlGaAs，x = 0.20，t =1.08μm），p型光波导层 封装了一对n型电流阻挡层（GaAs）的封装层（GaAs）。 利用这种结构，可以抑制由高阶模式引起的波长吐出的发生，从而稳定高功率操作。

公开(公告)号：US06171878B2

公开(公告)日：2001-01-09

申请号：US09157246

申请日：1998-09-18

申请人： Tsuyoshi Fujimoto ,  Yumi Naito ,  Atsushi Okubo ,  Yoshikazu Yamada

发明人： Tsuyoshi Fujimoto ,  Yumi Naito ,  Atsushi Okubo ,  Yoshikazu Yamada

IPC分类号： H01S302

CPC分类号： H01S5/2231 ,  B82Y20/00 ,  H01S5/2077 ,  H01S5/2206 ,  H01S5/34313 ,  H01S5/3432 ,  H01S2304/00

摘要： In a self-aligned structure semiconductor laser in which a pair of optical guide layers are respectively formed on both faces of an active layer, the optical guide layers having a bandgap which is wider than that of the active layer, a pair of cladding layers are formed so as to sandwich the active layer and the optical guide layers, the cladding layers having a bandgap which is wider than bandgap of the optical guide layers, a pair of carrier blocking layers are respectively formed between the active layer and the optical guide layers, the carrier blocking layers having a bandgap which is wider than bandgaps of the active layer and the optical guide layers, and a current blocking layer having a stripe-like window is embedded in at least one of the optical guide layers, the current blocking layer is formed by selective growth. In this way, a window of a current blocking layer can be accurately formed and the fabrication yield can be improved while avoiding maleffects on other layers.

摘要翻译： 在其中在有源层的两个表面上分别形成一对导光层的自对准结构半导体激光器中，具有比有源层宽的带隙的导光层，一对包覆层是 形成为夹持有源层和导光层，包层具有比导光层的带隙宽的带隙，在有源层和导光层之间分别形成一对载流子阻挡层， 具有比有源层和导光层的带隙宽的带隙的载流子阻挡层和具有条状窗口的电流阻挡层嵌入到至少一个导光层中，电流阻挡层是 通过选择性生长形成。以这种方式，可以精确地形成电流阻挡层的窗口，并且可以提高制造产率，同时避免对其他层的不良影响。

公开(公告)号：US06285699B1

公开(公告)日：2001-09-04

申请号：US09163395

申请日：1998-09-30

申请人： Yumi Naito ,  Satoru Okada ,  Tsuyoshi Fujimoto

发明人： Yumi Naito ,  Satoru Okada ,  Tsuyoshi Fujimoto

IPC分类号： H01S500

CPC分类号： B82Y20/00 ,  H01S5/12 ,  H01S5/2231 ,  H01S5/3432

摘要： On an n-GaAs substrate are sequentially formed an n-GaAs buffer layer, an n-AlGaAs cladding layer, a non-doped InGaAs active layer, a p-AlxGa1−xAs cladding layer, a p-GaAs contact layer, and further an n-AlGaAs current blocking layer having a stripe-like window is embedded in the cladding layer. At the active layer side interface of the current blocking layer, a diffraction grating of cyclic bumps and dips shape is formed, but the diffraction grating is not formed in a region of the stripe-like window where the current blocking layer is not present, i.e., a current injection region. In this way, a semiconductor laser device of low oscillation threshold, high oscillation efficiency, high reliability, long life time, and stabilized oscillation wavelength can be realized.

摘要翻译： 在n-GaAs衬底上依次形成n-GaAs缓冲层，n-AlGaAs覆层，非掺杂InGaAs有源层，p-Al x Ga 1-x As包层，p-GaAs接触层， 具有条状窗口的n-AlGaAs电流阻挡层嵌入包层中。 在电流阻挡层的有源层侧界面，形成了循环凸起和凹陷形状的衍射光栅，但是衍射光栅不形成在不存在电流阻挡层的条状窗口的区域中，即 ，电流注入区域。 以这种方式，可以实现低振荡阈值，高振荡效率，高可靠性，长寿命和稳定的振荡波长的半导体激光器件。

公开(公告)号：US06175582B1

公开(公告)日：2001-01-16

申请号：US09199435

申请日：1998-11-25

申请人： Yumi Naito ,  Yasuo Oeda ,  Tsuyoshi Fujimoto

发明人： Yumi Naito ,  Yasuo Oeda ,  Tsuyoshi Fujimoto

IPC分类号： H01S500

CPC分类号： B82Y20/00 ,  H01S5/20 ,  H01S5/2004 ,  H01S5/3213 ,  H01S5/3432

摘要： Optical guide layers are formed on both faces of the active layer, respectively, which optical guide layers have a band gap wider than that of the active layer, an n-type cladding layer and a p-type cladding layer respectively formed so as to sandwich the active layer and the optical guide layers therebetween, which cladding layers have a band gap wider than those of the optical guide layers, and carrier blocking layers are respectively formed between the active layer and the optical guide layers, which carrier blocking layers have a band gap wider than those of the active layer and the optical guide layers. The refractive index of the p-type cladding layer is lower than that of the n-type cladding layer. With such constitution inner losses are limited to a low level, as free carrier absorption is reduced, and the electric and thermal resistances of a semiconductor laser device are reduced, with the result that the laser device is enhanced in efficiency and output power.

摘要翻译： 导光层分别形成在有源层的两个表面上，这些导光层的带隙宽于有源层，n型包覆层和p型覆层分别形成为夹层 其间的有源层和导光层分别形成在该有源层与导光层之间的这些包层具有比导光层宽的带隙和载流子阻挡层的载流子阻挡层， 间隙宽于有源层和光导层的宽度。 p型覆层的折射率比n型覆层的折射率低。 通过这样的结构，内部损耗被限制在低水平，随着自由载流子吸收减小，并且半导体激光器件的电阻和热电阻降低，结果激光器件的效率和输出功率提高。

公开(公告)号：US5949807A

公开(公告)日：1999-09-07

申请号：US860489

申请日：1997-09-22

申请人： Tsuyoshi Fujimoto ,  Yumi Naito

发明人： Tsuyoshi Fujimoto ,  Yumi Naito

IPC分类号： H01S5/20 ,  H01S5/30 ,  H01S5/32 ,  H01S3/19

CPC分类号： H01S5/20 ,  H01S5/2004 ,  H01S5/305 ,  H01S5/309 ,  H01S5/3211

摘要： As shown in FIG. 1, on a semiconductor substrate 20 formed in sequence are a second n-type clad layer 11, a first n-type clad layer 12, an n-type carrier blocking layer 13, an active layer 14, a p-type carrier blocking layer 15, a first p-type clad layer 16, a second p-type clad layer 17, a current constriction layer 18, and a p-type contact layer 19. The carrier blocking layers 13 and 15 are doped to a high doping concentration of more than 1.times.10.sup.18 cm.sup.-3. The first clad layers 12 and 16 and the second clad layers 11 and 17 are doped to a low doping concentration of less than 3.times.10.sup.17 cm.sup.-3. The p-type carrier blocking layer 15 is doped with carbon or magnesium which is low in the diffusivity. Accordingly, the carriers are successfully confined in the active layer 14 thus to suppress the internal loss and the electrical resistance, whereby a high-efficiency, high-output semiconductor laser device can be obtained.

摘要翻译： PCT No.PCT / JP95 / 02677 Sec。 371日期：1997年9月22日 102（e）日期1997年9月22日PCT 1995年12月25日PCT PCT。 出版物WO96 / 20522 日期：1996年7月4日 如图1所示，在依次形成的半导体基板20上，设置有第二n型覆盖层11，第一n型覆盖层12，n型载流子阻挡层13，有源层14，p型载流子阻挡层 如图15所示，第一p型覆盖层16，第二p型覆盖层17，电流收缩层18和p型接触层19.载流子阻挡层13和15被掺杂到高掺杂浓度 超过1x1018厘米-3。 第一包层12和16以及第二包层11和17被掺杂到低于3×10 17 cm -3的低掺杂浓度。 p型载流子阻挡层15掺杂有扩散性低的碳或镁。 因此，载流子被成功地限制在有源层14中，从而抑制内部损耗和电阻，由此可以获得高效率，高输出的半导体激光器件。