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1.发明授权Apparatus and method for inspecting an electrolytic capacitor in an inverter circuit containing transistor switching elements 失效在包含晶体管开关元件的逆变器电路中检查电解电容器的装置和方法
公开(公告)号：US5798648A
公开(公告)日：1998-08-25
申请号：US768205
申请日：1996-12-17
CPC分类号： G01R31/028 , G01R27/2605 , G01R31/27 , G01R31/2843 , G01R31/40 , G01R31/42
摘要： An apparatus for inspecting an electric component in an inverter circuit has a DC power supply for supplying a direct current to a given position in an inverter circuit, a voltage detector for detecting a voltage at a given position in the inverter circuit, a current detector for detecting a current flowing at a given position in the inverter circuit, a switching circuit for changing positions at which the direct current is supplied from the DC power supply, positions at which the voltage is detected by the voltage detector, and positions at which the current is detected by the current detector, and a controller for outputting a switching signal to the switching circuit. The switching circuit is controlled by the controller to charge an electrolytic capacitor in an inverter circuit with a current from the DC power supply. The electrolytic capacitor is determined as to its quality by determining whether the calculated electrolytic capacitance of the electrolytic capacitor falls within a preset range or not. Each of the transistors of the inverter circuit is determined as to its quality by determining whether an V.sub.CE -I.sub.C curve thereof falls in a preset range or not. The electrolytic capacitor, the transistors, and also diodes connected across the transistors can be determined as to whether they are acceptable or not while they are being connected in the inverter circuit.
摘要翻译： 用于检查逆变器电路中的电气部件的装置具有用于向逆变器电路中的给定位置提供直流电的直流电源，用于检测逆变器电路中给定位置处的电压的电压检测器，用于 检测在逆变器电路中的给定位置流动的电流;切换电路，用于改变从直流电源提供直流电的位置，由电压检测器检测电压的位置，以及电流 由电流检测器检测，以及用于向开关电路输出开关信号的控制器。 开关电路由控制器控制，用来自直流电源的电流对逆变器电路中的电解电容器充电。 通过确定电解电容器的计算的电解电容是否落在预设范围内来确定电解电容器的质量。 通过确定其VCE-IC曲线是否落在预设范围内来确定逆变器电路的每个晶体管的质量。 可以确定在晶体管两端连接的电解电容器，晶体管以及连接在逆变器电路中的二极管是否可接受。
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公开(公告)号：US5694051A
公开(公告)日：1997-12-02
申请号：US610754
申请日：1996-03-04
CPC分类号： G01R31/028 , G01R27/2605 , G01R31/27 , G01R31/2843 , G01R31/40 , G01R31/42
摘要： A method and apparatus for inspecting a transistor in an inverter circuit includes turning on only the transistor of the inverter circuit. A predetermined collector current is supplied to the transistor until a transistor junction temperature reaches a predetermined temperature. The transistor is acceptable if a difference between a transistor collector-to-emitter voltage when the predetermined collector current is supplied and a transistor collector-to-emitter voltage when the junction temperature reaches the predetermined temperature falls within a preset range. Switching elements of the inverter circuit are controlled to supply a current through a resistor to charge an electrolytic capacitor of the inverter circuit. A voltage across the electrolytic capacitor during charging and a time period is measured from the beginning of charging until a time when a voltage across the electrolytic capacitor attains a predetermined voltage. An electrostatic capacitance of the electrolytic capacitor is determined based on the measured time period and a resistance value of the resistor. The electrolytic capacitor is discharged and a discharging voltage and current are measured. An equivalent series resistance of the electrolytic capacitor is determined based upon the voltage of the electrolytic capacitor at the beginning of discharge, the electrolytic capacitance and the measured discharge voltage and current.
摘要翻译： 用于检测逆变器电路中的晶体管的方法和装置包括仅接通逆变器电路的晶体管。 将预定的集电极电流提供给晶体管直到晶体管结温达到预定温度。 如果当提供预定的集电极电流时的晶体管集电极 - 发射极之间的电压与结温达到预定温度时的晶体管集电极 - 发射极间电压的差异落在预设范围内，晶体管是可以接受的。 控制逆变器电路的开关元件以通过电阻器提供电流以对逆变器电路的电解电容器充电。 从充电开始到电解电容器两端的电压达到预定电压的时刻，测量充电期间电解电容器两端的电压和时间段。 电解电容器的静电电容根据测定的时间周期和电阻器的电阻值来决定。 电解电容器放电并测量放电电压和电流。 电解电容器的等效串联电阻是根据放电开始时的电解电容器的电压，电解电容和测量的放电电压和电流来确定的。
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公开(公告)号：US5497095A
公开(公告)日：1996-03-05
申请号：US337479
申请日：1994-11-08
CPC分类号： G01R31/028 , G01R27/2605 , G01R31/27 , G01R31/2843 , G01R31/40 , G01R31/42
摘要： An apparatus for inspecting an electric component in an inverter circuit has a DC power supply for supplying a direct current to a given position in an inverter circuit, a voltage detector for detecting a voltage at a given position in the inverter circuit, a current detector for detecting a current flowing at a given position in the inverter circuit, a switching circuit for changing positions at which the direct current is supplied from the DC power supply, positions at which the voltage is detected by the voltage detector, and positions at which the current is detected by the current detector, and a controller for outputting a switching signal to the switching circuit. The switching circuit is controlled by the controller to charge an electrolytic capacitor in an inverter circuit with a current from the DC power supply. The electrolytic capacitor is determined as to its quality by determining whether the calculated electrolytic capacitance of the electrolytic capacitor falls within a preset range or not. Each of the transistors of the inverter circuit is determined as to its quality by determining whether an V.sub.CE -I.sub.C curve thereof falls in a preset range or not. The electrolytic capacitor, the transistors, and also diodes connected across the transistors can be determined as to whether they are acceptable or not while they are being connected in the inverter circuit.
摘要翻译： 用于检查逆变器电路中的电气部件的装置具有用于向逆变器电路中的给定位置提供直流电的直流电源，用于检测逆变器电路中给定位置处的电压的电压检测器，用于 检测在逆变器电路中的给定位置流动的电流;切换电路，用于改变从直流电源提供直流电的位置，由电压检测器检测电压的位置，以及电流 由电流检测器检测，以及用于向开关电路输出开关信号的控制器。 开关电路由控制器控制，用来自直流电源的电流对逆变器电路中的电解电容器充电。 通过确定电解电容器的计算的电解电容是否落在预设范围内来确定电解电容器的质量。 通过确定其VCE-IC曲线是否落在预设范围内来确定逆变器电路的每个晶体管的质量。 可以确定在晶体管两端连接的电解电容器，晶体管以及连接在逆变器电路中的二极管是否可接受。
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公开(公告)号：US07470983B2
公开(公告)日：2008-12-30
申请号：US10559923
申请日：2004-04-23
IPC分类号： H01L23/34 , H01L23/36 , H01L23/12 , H01L23/15 , H01L23/373
CPC分类号： H01L23/373 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes an intermediate layer provided between a semiconductor element and a heat sink. The intermediate layer moderates thermal stress resulting from a difference between thermal expansion of the semiconductor element and thermal expansion of the heat sink arising due to heat produced by the semiconductor element. This thermal stress moderation reduces warping of the semiconductor device as a whole.
摘要翻译： 半导体器件包括设置在半导体元件和散热器之间的中间层。 中间层缓和由于半导体元件的热膨胀和由于半导体元件产生的热而引起的散热器的热膨胀之间的差异导致的热应力。 这种热应力调节减少了整个半导体器件的翘曲。
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公开(公告)号：US20060145334A1
公开(公告)日：2006-07-06
申请号：US10559923
申请日：2004-04-23
IPC分类号： H01L23/34
CPC分类号： H01L23/373 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes an intermediate layer provided between a semiconductor element and a heat sink. The intermediate layer moderates thermal stress resulting from a difference between thermal expansion of the semiconductor element and thermal expansion of the heat sink arising due to heat produced by the semiconductor element. This thermal stress moderation reduces warping of the semiconductor device as a whole.
摘要翻译： 半导体器件包括设置在半导体元件和散热器之间的中间层。 中间层缓和由于半导体元件的热膨胀和由于半导体元件产生的热而引起的散热器的热膨胀之间的差异导致的热应力。 这种热应力调节减少了整个半导体器件的翘曲。
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公开(公告)号：US08669789B2
公开(公告)日：2014-03-11
申请号：US13198762
申请日：2011-08-05
申请人： Yoshinari Tsukada
发明人： Yoshinari Tsukada
CPC分类号： H03K17/0828 , H03K17/166 , H03K17/168
摘要： A semiconductor device (11) having a switching function of being turned on or off according to a voltage (Vge) of a driving signal supplied to a gate thereof is driven by generating a feedback voltage (VFE) based on a time change (dI/dt) of a collector current (Ic) of the semiconductor device (11) and applying the feedback voltage (VFE) as part of the voltage (Vge) of the driving signal when the semiconductor device (11) is switched from on to off.
摘要翻译： 根据提供给其栅极的驱动信号的电压（Vge），具有基于时间变化（dI / V）产生反馈电压（VFE）来驱动具有开关功能的半导体器件（11） dt），并且当半导体器件（11）从接通切换到断开时，将作为驱动信号的电压（Vge）的一部分的反馈电压（VFE）施加到半导体器件（11）的集电极电流（Ic）。
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公开(公告)号：US08749278B2
公开(公告)日：2014-06-10
申请号：US13198759
申请日：2011-08-05
IPC分类号： H03K3/00
CPC分类号： H03K17/166 , H02M1/44 , H03K17/04206 , H03K17/0424 , H03K17/168
摘要： A turn-off feedback unit (23OFF) of a semiconductor device driving unit generates a feedback voltage as part of a voltage of a drive signal for establishing electrical continuity or disconnection in a bus according to a temporal variation of a collector current of a first semiconductor device (11U) when the first semiconductor device (11U) is turned off from on. A turn-on feedback unit (23ON) generates the feedback voltage according to a commutation current flowing through a free wheeling diode (12D) connected to a second semiconductor device (11D) when the first semiconductor device (11U) is turned on from off.
摘要翻译： 半导体器件驱动单元的关断反馈单元（230FF）根据第一半导体的集电极电流的时间变化产生作为用于在总线中建立电连续性或断开的驱动信号的电压的一部分的反馈电压 当第一半导体器件（11U）断开时，器件（11U）。 当第一半导体器件（11U）接通时，接通反馈单元（23ON）根据流过连接到第二半导体器件（11D）的续流二极管（12D）的换向电流产生反馈电压。
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公开(公告)号：US20120032710A1
公开(公告)日：2012-02-09
申请号：US13198762
申请日：2011-08-05
申请人： Yoshinari Tsukada
发明人： Yoshinari Tsukada
IPC分类号： H02J1/00
CPC分类号： H03K17/0828 , H03K17/166 , H03K17/168
摘要： A semiconductor device (11) having a switching function of being turned on or off according to a voltage (Vge) of a driving signal supplied to a gate thereof is driven by generating a feedback voltage (VFE) based on a time change (dI/dt) of a collector current (Ic) of the semiconductor device (11) and applying the feedback voltage (VFE) as part of the voltage (Vge) of the driving signal when the semiconductor device (11) is switched from on to off.
摘要翻译： 根据提供给其栅极的驱动信号的电压（Vge），具有基于时间变化（dI / V）产生反馈电压（VFE）来驱动具有开关功能的半导体器件（11） dt），并且当半导体器件（11）从接通切换到断开时，将作为驱动信号的电压（Vge）的一部分的反馈电压（VFE）施加到半导体器件（11）的集电极电流（Ic）。
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公开(公告)号：US08698523B2
公开(公告)日：2014-04-15
申请号：US13198759
申请日：2011-08-05
IPC分类号： H03K3/00
摘要： A turn-off feedback unit (23OFF) of a semiconductor device driving unit generates a feedback voltage as part of a voltage of a drive signal for establishing electrical continuity or disconnection in a bus according to a temporal variation of a collector current of a first semiconductor device (11U) when the first semiconductor device (11U) is turned off from on. A turn-on feedback unit (23ON) generates the feedback voltage according to a commutation current flowing through a free wheeling diode (12D) connected to a second semiconductor device (11D) when the first semiconductor device (11U) is turned on from off.
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公开(公告)号：US20120032709A1
公开(公告)日：2012-02-09
申请号：US13198759
申请日：2011-08-05
IPC分类号： H03K3/30
CPC分类号： H03K17/166 , H02M1/44 , H03K17/04206 , H03K17/0424 , H03K17/168
摘要： A turn-off feedback unit (23OFF) of a semiconductor device driving unit generates a feedback voltage as part of a voltage of a drive signal for establishing electrical continuity or disconnection in a bus according to a temporal variation of a collector current of a first semiconductor device (11U) when the first semiconductor device (11U) is turned off from on. A turn-on feedback unit (23ON) generates the feedback voltage according to a commutation current flowing through a free wheeling diode (12D) connected to a second semiconductor device (11D) when the first semiconductor device (11U) is turned on from off.
摘要翻译： 半导体器件驱动单元的关断反馈单元（230FF）根据第一半导体的集电极电流的时间变化产生作为用于在总线中建立电连续性或断开的驱动信号的电压的一部分的反馈电压 当第一半导体器件（11U）断开时，器件（11U）。 当第一半导体器件（11U）接通时，接通反馈单元（23ON）根据流过连接到第二半导体器件（11D）的续流二极管（12D）的换向电流产生反馈电压。
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