公开(公告)号：US6065425A

公开(公告)日：2000-05-23

申请号：US120319

申请日：1998-07-22

申请人： Satoshi Takaki ,  Atsushi Yamagami

发明人： Satoshi Takaki ,  Atsushi Yamagami

IPC分类号： C23C16/24 ,  C23C16/509 ,  H01J37/32 ,  C23C16/00

CPC分类号： H01J37/32082 ,  C23C16/24 ,  C23C16/509 ,  H01J37/32541 ,  H01J37/32577

摘要： In order to effect a plasma process at a high rate, such as formation of a high-quality deposit film having very uniform thickness and quality over a large-area substrate, (1) an oscillation frequency of an RF generator is used in the range of 30 to 600 MHz, (2) a matching circuit and a cathode electrode are connected through a transmission line and RF power is supplied through the transmission line, (3) the cathode electrode is of an electrically conductive structure of a rod shape and at a connection part between the cathode electrode and an inner conductor of the transmission line, an external shape of a cross section of the cathode electrode is the same as an external shape of a cross section of the inner conductor, and (4) at least the connection part between the cathode electrode and the inner conductor of the transmission line is covered by a dielectric member having the same external shape as an external shape of a transmission medium in the cross section of the transmission line.

摘要翻译： 为了以高速率实现等离子体处理，例如在大面积基板上形成具有非常均匀厚度和质量的高质量沉积膜，（1）RF发生器的振荡频率在该范围内 （2）匹配电路和阴极通过传输线连接，并且通过传输线提供RF功率，（3）阴极电极为棒状的导电结构，并且在 阴极与传输线的内导体之间的连接部分，阴极的横截面的外形与内导体的横截面的外形相同，（4）至少 在传输线的横截面中，阴极和传输线的内部导体之间的连接部分被具有与传输介质的外部形状相同外形的电介质部件覆盖 ne。

公开(公告)号：US06435130B1

公开(公告)日：2002-08-20

申请号：US08916540

申请日：1997-08-22

申请人： Satoshi Takaki ,  Yoshio Segi ,  Atsushi Yamagami ,  Hiroyuki Katagiri ,  Hitoshi Murayama ,  Yasuyoshi Takai

发明人： Satoshi Takaki ,  Yoshio Segi ,  Atsushi Yamagami ,  Hiroyuki Katagiri ,  Hitoshi Murayama ,  Yasuyoshi Takai

IPC分类号： C23C16509

CPC分类号： H01J37/32091 ,  C23C16/24 ,  C23C16/45578 ,  C23C16/509 ,  G03G5/08278

摘要： A plasma CVD apparatus comprising a substantially enclosed reaction chamber containing substrate holding means and a cathode electrode arranged therein, wherein a high frequency power from a high frequency power source is supplied to said cathode electrode to generate plasma between said substrate holding means having a subtrate positioned thereon and said cathode electrode whereby plasma-processing said substrate, characterized in that said cathode electrode comprises a plurality of conductor members situated on substantially the same axis which are capacitively coupled by a dielectric member. A plasma-processing method using said cathode electrode.

摘要翻译： 一种等离子体CVD装置，包括：基本封闭的反应室，其包含基板保持装置和布置在其中的阴极电极，其中来自高频电源的高频功率被提供给所述阴极，以在所述基板保持装置之间产生等离子体，所述基板保持装置具有位于 在其上和所述阴极电极，由此对所述衬底进行等离子体处理，其特征在于，所述阴极包括位于基本上相同的轴上的多个导体构件，所述多个导体构件通过电介质构件电容耦合。1。一种使用所述阴极电极的等离子体处理方法。

公开(公告)号：US5534070A

公开(公告)日：1996-07-09

申请号：US343560

申请日：1994-11-30

申请人： Nobuyuki Okamura ,  Atsushi Yamagami ,  Satoshi Takaki

发明人： Nobuyuki Okamura ,  Atsushi Yamagami ,  Satoshi Takaki

IPC分类号： C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  C23C16/00 ,  H05H1/20

CPC分类号： H01J37/321 ,  C23C16/509 ,  H01J37/32532

摘要： A plasma CVD process comprises conducting film formation in a reaction chamber capable of being substantially vacuumed in which a plurality of cylindrical substrates are spacedly arranged on a concentric circle in said reaction chamber such that a desired discharge space is formed at the central position of the inside of said reaction chamber and a cathode electrode is disposed at the central position of said discharge space, by introducing a film-forming gas into said discharge space and applying a high frequency power from a high frequency power source to said cathode electrode to produce plasma between said plurality of cylindrical substrates and said cathode electrode, whereby forming a deposited film on the surface of each of said plurality of cylindrical substrates, characterized in that an earth shield comprising a non-magnetic material and a soft magnetic material or an insulating material being stacked is disposed at each of the opposite end portions of said cathode electrode, and a very-high-frequency energy of a frequency range of 60 MHz or more from said high frequency power source is applied to said cathode electrode to produce plasma in said reaction chamber whereby forming a deposited film on the surface of each of said plurality of cylindrical substrates. And a VHF plasma CVD apparatus suitable for practicing the plasma CVD process.

摘要翻译： PCT No.PCT / JP94 / 00537 371日期1994年11月30日 102（e）1994年11月30日PCT PCT日期为1994年3月31日。等离子体CVD工艺包括在能够基本上被抽真空的反应室中进行成膜，其中多个圆柱形基板间隔布置在同心圆上 所述反应室使得在所述反应室的内部的中心位置处形成期望的放电空间，并且在所述放电空间的中心位置处设置阴极，通过将成膜气体引入所述放电空间并施加 从高频电源到所述阴极电极的高频电力，以在所述多个圆柱形基板和所述阴极之间产生等离子体，由此在所述多个圆柱形基板中的每一个的表面上形成沉积膜，其特征在于， 包括非磁性材料和软磁性材料或层叠的绝缘材料的屏蔽设置在每一个上 e所述阴极电极的相对端部分，并且将所述高频电源的频率范围为60MHz或更高的非常高频能量施加到所述阴极以在所述反应室中产生等离子体，由此形成沉积膜 在所述多个圆柱形基底中的每一个的表面上。 以及适用于实施等离子体CVD工艺的VHF等离子体CVD装置。

公开(公告)号：US06558507B1

公开(公告)日：2003-05-06

申请号：US09664339

申请日：2000-09-18

申请人： Koji Teranishi ,  Atsushi Yamagami ,  Satoshi Takaki

发明人： Koji Teranishi ,  Atsushi Yamagami ,  Satoshi Takaki

IPC分类号： C23C1600

CPC分类号： H01J37/32091 ,  C23C14/34 ,  C23C16/507 ,  H01J37/32532 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

摘要： A plasma processing apparatus has a substrate holder, arranged in a vessel which can be reduced in pressure, for placing a substrate to be processed there on, a process gas fed into the reaction vessel, and a cathode electrode for supplying a high-frequency wave power from a high-frequency wave power source to an interior of the reaction vessel through a matching circuit, and is characterized in that at least a part of the reaction vessel is constituted by a dielectric member, and the cathode electrode is arranged outside the reaction vessel, so that a plasma distribution in the reaction vessel is made uniform and a uniform plasma process for a substrate to be processed is made possible. The plasma process includes CVD, sputtering, etching or ashing.

摘要翻译： 一种等离子体处理装置具有：衬底保持器，布置在可以减压的容器中，用于放置待处理的衬底，供给到反应容器中的工艺气体和用于提供高频波的阴极 通过匹配电路从高频波电源向反应容器的内部供电，其特征在于反应容器的至少一部分由电介质构成，阴极设置在反应的外侧 使得反应容器中的等离子体分布均匀，并且可以对待处理的基板进行均匀的等离子体处理。 等离子体工艺包括CVD，溅射，蚀刻或灰化。

公开(公告)号：US06291029B1

公开(公告)日：2001-09-18

申请号：US09368497

申请日：1999-08-05

申请人： Satoshi Takaki ,  Atsushi Yamagami ,  Nobuyuki Okamura

发明人： Satoshi Takaki ,  Atsushi Yamagami ,  Nobuyuki Okamura

IPC分类号： C23C1600

CPC分类号： H01J37/32082 ,  C23C16/24 ,  C23C16/509

摘要： To improve the processing rate and uniformity in a plasma processing for a substrate having a relatively large area, a plasma processing apparatus includes a reaction vessel which has a portion made of a dielectric member, which accommodates a film formation substrate, and which can be evacuated, an evacuating means and a gas supply means for supplying a predetermined gas into the reaction vessel, a cathode electrode arranged in a position outside the reaction vessel where the cathode electrode opposes the film formation substrate accommodated in the reaction vessel via the dielectric member, and a high frequency power supply means (a matching circuit and a high frequency power supply) for supplying high frequency power of 30 MHz to 300 MHz to the cathode electrode. The high frequency power of 30 MHz to 300 MHz is supplied to the cathode electrode to generate a plasma between the dielectric member and the film formation substrate.

摘要翻译： 为了提高具有相对较大面积的基板的等离子体处理的加工速度和均匀性，等离子体处理装置包括反应容器，该反应容器具有由电介质部件构成的部分，其容纳成膜基板，并且能够被抽真空 排气装置和用于将预定气体供应到反应容器中的气体供给装置，设置在反应容器外侧位置处的阴极，阴极电极经由电介质构件与容纳在反应容器中的成膜​​基板相对，并且 用于将30MHz至300MHz的高频功率提供给阴极的高频电源装置（匹配电路和高频电源）。 将30MHz至300MHz的高频功率提供给阴极，以在电介质构件和成膜衬底之间产生等离子体。

公开(公告)号：US6076481A

公开(公告)日：2000-06-20

申请号：US825594

申请日：1997-04-01

申请人： Atsushi Yamagami ,  Satoshi Takaki

发明人： Atsushi Yamagami ,  Satoshi Takaki

IPC分类号： C23C16/509 ,  C23C16/54 ,  H01J37/32 ,  C23C16/00 ,  H01L21/00

CPC分类号： H01J37/32082 ,  C23C16/509 ,  C23C16/545 ,  H01J37/32541 ,  H01J37/32577

摘要： One or more mismatching portions in which a characteristic impedance of a high frequency transmission cable of a cathode electrode is changed in a traveling direction of an incident wave of the high frequency are provided on the cathode electrode for use in plasma processing, whereby the plasma processing can form a high-quality deposited film having an extremely uniform film thickness and a homogeneous film quality on a substrate at high speed, can effectively form a semiconductor device, can also form the high-quality deposited film having the extremely uniform film thickness and the homogeneous film quality in the axial direction and the circumferential direction of the cylindrical substrate on the surfaces of a plurality of cylindrical substrates at high speed, and can effectively form the semiconductor device.

摘要翻译： 在用于等离子体处理的阴极上设置有在高频的入射波的行进方向上改变阴极的高频传输电缆的特性阻抗的一个或多个失配部分，由此等离子体处理 可以高速地在基板上形成具有非常均匀的膜厚度和均匀的薄膜质量的高质量沉积膜，可以有效地形成半导体器件，还可以形成具有非常均匀的膜厚度的高质量沉积膜和 能够高效地形成多个圆筒状基板的表面上的圆筒状基板的轴向和圆周方向的膜质量均匀化，能够有效地形成半导体装置。

公开(公告)号：US6152071A

公开(公告)日：2000-11-28

申请号：US988137

申请日：1997-12-10

申请人： Kazuyoshi Akiyama ,  Atsushi Yamagami ,  Satoshi Takaki ,  Koji Teranishi

发明人： Kazuyoshi Akiyama ,  Atsushi Yamagami ,  Satoshi Takaki ,  Koji Teranishi

IPC分类号： C23C16/24 ,  C23C16/509 ,  H01J37/32 ,  C23C16/00

CPC分类号： H01J37/32174 ,  C23C16/24 ,  C23C16/509 ,  H01J37/32082

摘要： A high frequency introducing means is provided which comprises a high frequency electrode having a shape of a bar or plate for generating plasma by high frequency power, and an adjustment mechanism for adjusting an absolute value of reactance between an end of the electrode opposite to a high frequency power introducing point of the electrode and a grounded portion. A plasma treatment apparatus and a plasma treatment method are also provided employing the above high frequency introducing means. A deposition film of high quality is formed stably and efficiently in an extremely uniform thickness and an extremely uniform quality at a high speed on a base member of a large area by adjusting the absolute value of the reactance.

摘要翻译： 提供了一种高频引入装置，其包括具有用于通过高频功率产生等离子体的棒或板形状的高频电极，以及调节机构，用于调节与高电位相反的电极端部之间的电抗绝对值 电极的高频功率引入点和接地部分。 使用上述高频引入装置也提供了等离子体处理装置和等离子体处理方法。 通过调整电抗的绝对值，在大面积的基底构件上以高速度，以高度均匀的质量稳定有效地形成高品质的沉积膜。

公开(公告)号：US6145469A

公开(公告)日：2000-11-14

申请号：US853449

申请日：1997-05-09

申请人： Koji Teranishi ,  Atsushi Yamagami ,  Satoshi Takaki

发明人： Koji Teranishi ,  Atsushi Yamagami ,  Satoshi Takaki

IPC分类号： H05H1/46 ,  C23C14/34 ,  C23C16/50 ,  C23C16/505 ,  C23C16/507 ,  C23F4/00 ,  H01J37/32 ,  H01L21/203 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H01L31/20 ,  C23C16/00

CPC分类号： H01J37/32091 ,  C23C14/34 ,  C23C16/507 ,  H01J37/32532 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

摘要： A plasma processing apparatus has a substrate holder, arranged in a reaction vessel which can be reduced in pressure, for placing a substrate to be processed thereon, means for feeding a process gas into the reaction vessel, and a cathode electrode for supplying a high-frequency wave power from a high-frequency wave power source to an interior of the reaction vessel through a matching circuit, and is characterized in that at least a part of the reaction vessel is constituted by a dielectric member, and the cathode electrode is arranged outside the reaction vessel, so that a plasma distribution in the reaction vessel is made uniform, and a uniform plasma process for a substrate to be processed is made possible. The plasma process includes CVD, sputtering, etching or ashing.

摘要翻译： 等离子体处理装置具有设置在能够降低压力的反应容器中的基板保持件，用于放置待处理的基板，用于将工艺气体供给到反应容器中的装置， 通过匹配电路从高频波电源到反应容器内部的频率波功率，其特征在于反应容器的至少一部分由电介质构成，阴极电极布置在外部 使得反应容器中的等离子体分布均匀，并且可以对待处理的基板进行均匀的等离子体处理。 等离子体工艺包括CVD，溅射，蚀刻或灰化。

公开(公告)号：US5846612A

公开(公告)日：1998-12-08

申请号：US627018

申请日：1996-04-03

申请人： Satoshi Takaki ,  Atsushi Yamagami ,  Nobuyuki Okamura

发明人： Satoshi Takaki ,  Atsushi Yamagami ,  Nobuyuki Okamura

IPC分类号： H05H1/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  C23C16/511 ,  G03G5/082 ,  H01L21/205 ,  H01L31/04 ,  B05D3/06 ,  H05H1/00

CPC分类号： H01J37/32082 ,  C23C16/505 ,  C23C16/511 ,  G03G5/08278 ,  H01J2237/3321

摘要： Provided is a process for efficiently forming a high-quality deposited film at a high deposition rate in the quality equivalent to or higher than that of films formed by the RF plasma CVD process. A stock gas is introduced under a reduced pressure into a reaction container provided with a cathode electrode inside and a high-frequency power in the range of 50 to 300 MHz is supplied to the cathode electrode, whereby ions of the stock gas with energy of 40 or more eV are made to hit against a substrate, thereby forming a deposited film thereon.

摘要翻译： 本发明提供一种以与CVD等离子体CVD法形成的膜相当或更高质量的高成膜速度高效地形成高质量的沉积膜的方法。 在减压下将原料气体引入设置有阴极电极的反应容器中，将50〜300MHz范围内的高频电力供给到阴极电极，由此能量为40的原料气体的离子 或更多的eV撞击基板，从而在其上形成沉积膜。

公开(公告)号：US5540781A

公开(公告)日：1996-07-30

申请号：US338617

申请日：1994-11-23

申请人： Atsushi Yamagami ,  Nobuyuki Okamura ,  Satoshi Takaki

发明人： Atsushi Yamagami ,  Nobuyuki Okamura ,  Satoshi Takaki

IPC分类号： C23C16/509 ,  H01J37/32 ,  H05H1/46 ,  C23C16/00 ,  H05H1/20

CPC分类号： H01J37/32082 ,  C23C16/5093 ,  H01J37/32541 ,  H05H1/46

摘要： A VHF plasma CVD process in which a cathode electrode is electrically divided into a plurality of elements in the axial direction of a cylindrical substrate, and a very-high-frequency energy with a frequency in the range of 60 MHz to 300 MHz is supplied to each of the divided cathode electrode elements by way of a high frequency power supply means for generating a plasma in a reaction chamber thereby forming a deposited film; and a VHF plasma CVD apparatus suitable for carrying out the VHF plasma process.

摘要翻译： PCT No.PCT / JP94 / 00462 Sec。 371日期1994年11月23日 102（e）日期1994年11月23日PCT 1994年3月23日提交了一种VHF等离子体CVD法，其中阴极电极在圆筒形基板的轴向电分成多个元件，并且具有非常高的频率 通过用于在反应室中产生等离子体从而形成沉积膜的高频电源装置向每个分割的阴极电极元件提供频率在60MHz至300MHz的范围内的能量; 以及适用于进行VHF等离子体处理的VHF等离子体CVD装置。