公开(公告)号：US20110129659A1

公开(公告)日：2011-06-02

申请号：US12953841

申请日：2010-11-24

申请人： Koji Teranishi ,  Shinji Fukui ,  Keisui Banno

发明人： Koji Teranishi ,  Shinji Fukui ,  Keisui Banno

IPC分类号： B05D5/06 ,  B32B3/26

CPC分类号： G02B1/113 ,  G02B1/12 ,  G02B2207/107 ,  Y10T428/24997

摘要： An optical device that includes a low refractive index film is produced at a low cost. To attain this object, in a process of producing an optical device that includes a multilayer film in which low refractive index films and high refractive index films are alternately laminated, a porous film is formed on a substrate by a sputtering deposition system which uses a target unit. The porous film is immersed in a liquid to lower the refractive index of the film. By forming in simple steps a low refractive index film that is lower in refractive index than conventionally used films, a high quality optical device can be obtained at a low cost.

摘要翻译： 以低成本制造包括低折射率膜的光学装置。 为了实现这个目的，在制造包括交替层叠有低折射率膜和高折射率膜的多层膜的光学器件的工艺中，通过使用靶材的溅射沉积系统在基板上形成多孔膜 单元。 将多孔膜浸入液体中以降低膜的折射率。 通过以简单的步骤形成折射率低于常规使用的膜的低折射率膜，可以以低成本获得高质量的光学器件。

公开(公告)号：US07035000B2

公开(公告)日：2006-04-25

申请号：US11144641

申请日：2005-06-06

申请人： Hidehiro Kanazawa ,  Kenji Ando ,  Koji Teranishi

发明人： Hidehiro Kanazawa ,  Kenji Ando ,  Koji Teranishi

IPC分类号： G02B5/08 ,  G02B1/10

CPC分类号： G02B1/115

摘要： An antireflection film includes alternately deposited high-refractive-index layers and low-refractive-index layers. The refractive indexes and extinction coefficients of the layers are such that the antireflection film exhibits sufficient antireflection characteristics even if the geometrical thickness thereof is small. An optical element having the antireflection film on a substrate exhibits high transmittance and has excellent optical characteristics.

公开(公告)号：US06947209B2

公开(公告)日：2005-09-20

申请号：US10424912

申请日：2003-04-29

申请人： Hidehiro Kanazawa ,  Kenji Ando ,  Koji Teranishi

发明人： Hidehiro Kanazawa ,  Kenji Ando ,  Koji Teranishi

IPC分类号： G02B1/11 ,  B32B7/02 ,  G02B1/115 ,  F21V9/04

CPC分类号： G02B1/115

摘要： An antireflection film includes alternately deposited high-refractive-index layers and low-refractive-index layers. The refractive indexes and extinction coefficients of the layers are such that the antireflection film exhibits sufficient antireflection characteristics even if the geometrical thickness thereof is small. An optical element having the antireflection film on a substrate exhibits high transmittance and has excellent optical characteristics.

摘要翻译： 抗反射膜包括交替沉积的高折射率层和低折射率层。 这些层的折射率和消光系数使得即使其几何厚度小，抗反射膜也具有足够的抗反射特性。 在基板上具有抗反射膜的光学元件显示高透射率并且具有优异的光学特性。

公开(公告)号：US06333079B1

公开(公告)日：2001-12-25

申请号：US09874251

申请日：2001-06-06

申请人： Satoshi Takaki ,  Koji Teranishi

发明人： Satoshi Takaki ,  Koji Teranishi

IPC分类号： H05H124

CPC分类号： H01J37/32174 ,  C23C16/509 ,  H01J37/32082

摘要： In a plasma CVD system comprises a reactor the inside of which can be evacuated, a substrate holding means provided in the reactor, a material gas feed means for feeding into the reactor a material gas for plasma CVD, a high-frequency power supply means for supplying to a plasma-producing high-frequency electrode a high-frequency power having an oscillation frequency in the range of from 30 MHz to 600 MHz, generated by a high-frequency power source, and an exhaust means for exhausting a gas remaining in the reactor after the reaction; the high-frequency power generated in the high-frequency power source being supplied to the plasma-producing high-frequency electrode to cause a plasma to take place across a substrate held by the substrate holding means and the plasma-producing high-frequency electrode to form a deposited film on the substrate; the phase of reflected power is adjusted on the plasma-producing high-frequency electrode at its part on the opposite side of the feeding point. High-quality deposited films having a very uniform film thickness and a homogeneous film quality can be formed at a high rate and stably on large-area substrates having any shapes, to obtain semiconductor devices in a good efficiency.

摘要翻译： 在等离子体CVD系统中，包括其内部可被抽真空的反应器，设置在反应器中的基板保持装置，用于向反应器供应用于等离子体CVD的原料气体的材料气体供给装置，用于 向等离子体产生高频电极供给具有由高频电源产生的振荡频率在30MHz至600MHz范围内的高频功率;以及排气装置，用于排出残留在所述高频电源中的气体 反应后反应; 在高频电源中产生的高频电力被供给到等离子体产生高频电极，以使等离子体在由基板保持装置和等离子体产生高频电极保持的基板上发生， 在基板上形成沉积膜;在等离子体产生高频电极的馈电点相对侧的部分调整反射功率的相位。 可以在具有任何形状的大面积基板上以高速率和稳定地形成具有非常均匀的膜厚度和均匀膜质量的高质量沉积膜，从而以高效率获得半导体器件。

公开(公告)号：US6152071A

公开(公告)日：2000-11-28

申请号：US988137

申请日：1997-12-10

申请人： Kazuyoshi Akiyama ,  Atsushi Yamagami ,  Satoshi Takaki ,  Koji Teranishi

发明人： Kazuyoshi Akiyama ,  Atsushi Yamagami ,  Satoshi Takaki ,  Koji Teranishi

IPC分类号： C23C16/24 ,  C23C16/509 ,  H01J37/32 ,  C23C16/00

CPC分类号： H01J37/32174 ,  C23C16/24 ,  C23C16/509 ,  H01J37/32082

摘要： A high frequency introducing means is provided which comprises a high frequency electrode having a shape of a bar or plate for generating plasma by high frequency power, and an adjustment mechanism for adjusting an absolute value of reactance between an end of the electrode opposite to a high frequency power introducing point of the electrode and a grounded portion. A plasma treatment apparatus and a plasma treatment method are also provided employing the above high frequency introducing means. A deposition film of high quality is formed stably and efficiently in an extremely uniform thickness and an extremely uniform quality at a high speed on a base member of a large area by adjusting the absolute value of the reactance.

摘要翻译： 提供了一种高频引入装置，其包括具有用于通过高频功率产生等离子体的棒或板形状的高频电极，以及调节机构，用于调节与高电位相反的电极端部之间的电抗绝对值 电极的高频功率引入点和接地部分。 使用上述高频引入装置也提供了等离子体处理装置和等离子体处理方法。 通过调整电抗的绝对值，在大面积的基底构件上以高速度，以高度均匀的质量稳定有效地形成高品质的沉积膜。

公开(公告)号：US6145469A

公开(公告)日：2000-11-14

申请号：US853449

申请日：1997-05-09

申请人： Koji Teranishi ,  Atsushi Yamagami ,  Satoshi Takaki

发明人： Koji Teranishi ,  Atsushi Yamagami ,  Satoshi Takaki

IPC分类号： H05H1/46 ,  C23C14/34 ,  C23C16/50 ,  C23C16/505 ,  C23C16/507 ,  C23F4/00 ,  H01J37/32 ,  H01L21/203 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H01L31/20 ,  C23C16/00

CPC分类号： H01J37/32091 ,  C23C14/34 ,  C23C16/507 ,  H01J37/32532 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

摘要： A plasma processing apparatus has a substrate holder, arranged in a reaction vessel which can be reduced in pressure, for placing a substrate to be processed thereon, means for feeding a process gas into the reaction vessel, and a cathode electrode for supplying a high-frequency wave power from a high-frequency wave power source to an interior of the reaction vessel through a matching circuit, and is characterized in that at least a part of the reaction vessel is constituted by a dielectric member, and the cathode electrode is arranged outside the reaction vessel, so that a plasma distribution in the reaction vessel is made uniform, and a uniform plasma process for a substrate to be processed is made possible. The plasma process includes CVD, sputtering, etching or ashing.

摘要翻译： 等离子体处理装置具有设置在能够降低压力的反应容器中的基板保持件，用于放置待处理的基板，用于将工艺气体供给到反应容器中的装置， 通过匹配电路从高频波电源到反应容器内部的频率波功率，其特征在于反应容器的至少一部分由电介质构成，阴极电极布置在外部 使得反应容器中的等离子体分布均匀，并且可以对待处理的基板进行均匀的等离子体处理。 等离子体工艺包括CVD，溅射，蚀刻或灰化。

公开(公告)号：US20090148695A1

公开(公告)日：2009-06-11

申请号：US12326504

申请日：2008-12-02

申请人： Takayuki Miura ,  Kenji Ando ,  Hidehiro Kanazawa ,  Koji Teranishi ,  Seiken Matsumoto ,  Kyoko Nagata ,  Shumpei Tatsumi ,  Shinji Fukui

发明人： Takayuki Miura ,  Kenji Ando ,  Hidehiro Kanazawa ,  Koji Teranishi ,  Seiken Matsumoto ,  Kyoko Nagata ,  Shumpei Tatsumi ,  Shinji Fukui

IPC分类号： B32B5/00

CPC分类号： G21K1/062 ,  B82Y10/00 ,  G21K2201/067 ,  Y10T428/26

摘要： An optical element for X-ray includes a substrate, a first multilayer film having a reflection property with respect to light in a soft X-ray wavelength range, and a second multilayer film, disposed between the substrate and the first multilayer film, for reducing film stress of the first multilayer film. The second multilayer film has a periodic structure having a unit period film thickness which is 90% or more and less than 110% of a two or more integral multiple of 7 nm.

摘要翻译： 用于X射线的光学元件包括基板，具有相对于软X射线波长范围内的光的反射特性的第一多层膜和设置在基板和第一多层膜之间的第二多层膜，用于还原 第一层多层薄膜的薄膜应力。 第二多层膜具有单位周期膜厚度为7nm以上2倍以上的整数倍的90％以上且小于110％的周期性结构。

公开(公告)号：US20050072669A1

公开(公告)日：2005-04-07

申请号：US10953931

申请日：2004-09-29

申请人： Koji Teranishi ,  Yasuyuki Suzuki

发明人： Koji Teranishi ,  Yasuyuki Suzuki

IPC分类号： G02B1/11 ,  C23C14/00 ,  C23C14/06 ,  C23C14/34 ,  H01J37/32 ,  G02B25/00

CPC分类号： H01J37/32623 ,  C23C14/0057 ,  C23C14/0068 ,  C23C14/0694 ,  H01J37/32357

摘要： A deposition apparatus generates plasma by applying voltage to a target, deposits target's particles that are vaporized by the plasma onto a surface of an object, and forms a thin film onto the surface of the object, and also includes a plasma direction unit that directs the plasma generated by the application of the voltage.

摘要翻译： 沉积装置通过向靶施加电压来产生等离子体，将通过等离子体蒸发的目标物质的颗粒沉积到物体的表面上，并在物体的表面上形成薄膜，并且还包括引导物体的等离子体方向单元 等离子体由施加电压产生。

公开(公告)号：US20130056891A1

公开(公告)日：2013-03-07

申请号：US13643159

申请日：2011-05-25

申请人： Hiroyuki Kubo ,  Shigeru Hashimoto ,  Keiji Hirabayashi ,  Koji Teranishi ,  Yusuke Owaki

发明人： Hiroyuki Kubo ,  Shigeru Hashimoto ,  Keiji Hirabayashi ,  Koji Teranishi ,  Yusuke Owaki

IPC分类号： B29D11/00

CPC分类号： C03B11/086 ,  C03B2215/12 ,  C03B2215/24 ,  C03B2215/72 ,  C23C14/0605 ,  C23C14/325 ,  G02B3/04

摘要： Provided is a method of producing an optical element forming mold, the method including forming a ta-C film 12 on a mold matrix 10 for an optical element forming mold by an FCVA process, in which the mold matrix 10 is kept at a floating potential, a voltage is applied to a mold matrix-holding member 2 for holding the mold matrix via insulating members (3a,3b), and a magnet 4 internally provided in the mold matrix forms a magnetic field for applying a magnetic force in a normal direction of a transfer surface of the mold matrix so as to follow a magnetic force applied by a filter coil 22, thereby homogenizing the film quality.

摘要翻译： 提供一种光学元件形成模具的制造方法，该方法包括通过FCVA工艺在用于光学元件成型模具的模具基体10上形成ta-C膜12，其中模具基体10保持在浮动电位 ，通过绝缘构件（3a，3b）将电压施加到用于保持模具基体的模具基体保持构件2，并且内部设置在模具基体中的磁体4形成用于沿法线方向施加磁力的磁场 的模具基体的转印表面，以便遵循由过滤器线圈22施加的磁力，从而使膜质量均匀化。

公开(公告)号：US20090252977A1

公开(公告)日：2009-10-08

申请号：US12416544

申请日：2009-04-01

申请人： Seiken Matsumoto ,  Kenji Ando ,  Hidehiro Kanazawa ,  Koji Teranishi ,  Takayuki Miura ,  Kyoko Nagata

发明人： Seiken Matsumoto ,  Kenji Ando ,  Hidehiro Kanazawa ,  Koji Teranishi ,  Takayuki Miura ,  Kyoko Nagata

IPC分类号： B32B15/04

CPC分类号： B82Y10/00 ,  G02B5/0891 ,  G21K1/062 ,  G21K2201/067

摘要： A stress distribution resulting from variation in in-plane film quality of a stress relaxation layer and a reflective layer is eliminated. A reflective layer is stacked on a substrate via a stress relaxation layer. The stress relaxation layer has a stress relaxation portion having a uniform film thickness distribution to cancel the internal stress of the reflective layer, and a stress distribution eliminating portion with a film thickness distribution approximated to a second order even function. The stress is substantially proportional to the film thickness. Thus, formation of a given film thickness distribution allows the stress distribution to be controlled. However, changing the film thickness distribution based on a design value may degrade the optical characteristics. Thus, the film thickness distribution of the stress distribution eliminating portion, which serves to eliminate the stress distribution, is approximated to the second order even function. This enables aberration associated with the film thickness distribution to be reduced by adjusting an optical system.

摘要翻译： 消除了由应力松弛层和反射层的面内膜质量的变化引起的应力分布。 反射层通过应力松弛层堆叠在基板上。 应力缓和层具有均匀的薄膜厚度分布的应力松弛部，以抵消反射层的内部应力，以及具有近似于二次偶次函数的膜厚分布的应力分布消除部。 应力基本上与膜厚成正比。 因此，形成给定的膜厚度分布允许控制应力分布。 然而，基于设计值改变膜厚度分布可能降低光学特性。 因此，用于消除应力分布的应力分布消除部分的膜厚度分布近似于二阶偶函数。 通过调整光学系统，能够降低与膜厚分布有关的像差。