公开(公告)号：US20060197951A1

公开(公告)日：2006-09-07

申请号：US11363755

申请日：2006-02-27

申请人： Aviv Frommer ,  Vladimir Levinski ,  Mark Smith ,  Jeffrey Byers ,  Chris Mack ,  Michael Adel

发明人： Aviv Frommer ,  Vladimir Levinski ,  Mark Smith ,  Jeffrey Byers ,  Chris Mack ,  Michael Adel

IPC分类号： G01B11/00

CPC分类号： G03F9/7049 ,  G03F7/70633 ,  G03F9/7088

摘要： In one embodiment, a system for imaging an acquisition target or an overlay or alignment semiconductor target is disclosed. The system includes a beam generator for directing at least one incident beam having a wavelength λ towards a periodic target having structures with a specific pitch p. A plurality of output beams are scattered from the periodic target in response to the at least one incident beam. The system further includes an imaging lens system for passing only a first and a second output beam from the target. The imaging system is adapted such that the angular separation between the captured beams, λ, and the pitch are selected to cause the first and second output beams to form a sinusoidal image. The system also includes a sensor for imaging the sinusoidal image or images, and a controller for causing the beam generator to direct the at least one incident beam towards the periodic target or targets, and for analyzing the sinusoidal image or images. In one application the detector detects a sinusoidal image of an acquisition target with the same pitch as the designed target and the controller analyzes the pitch of the sinusoidal image compared to design data to determine whether the target has been successfully acquired. In a second application a first and second periodic target that each have a specific pitch p are imaged so that the detector detects a first sinusoidal image of the first target and a second sinusoidal image of the second target and the controller analyzes the first and second sinusoidal image to determine whether the first and second targets have an overlay or alignment error.

摘要翻译： 在一个实施例中，公开了一种用于对采集目标或覆盖或对准半导体目标进行成像的系统。 该系统包括用于将具有波长λ的至少一个入射光束朝向具有特定间距p的结构的周期性目标引导的光束发生器。 响应于至少一个入射光束，多个输出光束从周期性靶标散射。 该系统还包括用于仅从目标通过第一和第二输出光束的成像透镜系统。 成像系统被适配成使得捕获的光束λ和间距之间的角度间隔被选择为使得第一和第二输出光束形成正弦图像。 该系统还包括用于对正弦图像或图像进行成像的传感器，以及控制器，用于使光束发生器将至少一个入射光束引向周期性目标或目标，并用于分析正弦图像或图像。 在一个应用中，检测器以与设计目标相同的间距检测采集目标的正弦图像，并且控制器分析与设计数据相比的正弦图像的间距，以确定目标是否已被成功获取。 在第二应用中，每个具有特定间距p的第一和第二周期性目标成像，使得检测器检测第一目标的第一正弦图像和第二目标的第二正弦图像，并且控制器分析第一和第二正弦曲线 图像以确定第一和第二目标是否具有覆盖或对齐错误。

公开(公告)号：US07528953B2

公开(公告)日：2009-05-05

申请号：US11363755

申请日：2006-02-27

申请人： Aviv Frommer ,  Vladimir Levinski ,  Mark D. Smith ,  Jeffrey Byers ,  Chris A. Mack ,  Michael E. Adel

发明人： Aviv Frommer ,  Vladimir Levinski ,  Mark D. Smith ,  Jeffrey Byers ,  Chris A. Mack ,  Michael E. Adel

IPC分类号： G01B11/00 ,  G06K9/00

CPC分类号： G03F9/7049 ,  G03F7/70633 ,  G03F9/7088

摘要： In one embodiment, a system includes a beam generator for directing at least one incident beam having a wavelength λ towards a periodic target having structures with a specific pitch p. A plurality of output beams are scattered from the periodic target in response to the at least one incident beam. The system further includes an imaging lens system for passing only a first and a second output beam from the target. The imaging system is adapted such that the angular separation between the captured beams, λ, and the pitch are selected to cause the first and second output beams to form a sinusoidal image. The system also includes a sensor for imaging the sinusoidal image or images, and a controller for causing the beam generator to direct the at least one incident beam towards the periodic target or targets, and for analyzing the sinusoidal image or images.

摘要翻译： 在一个实施例中，系统包括用于将具有波长λ的至少一个入射光束朝向具有特定间距p的结构的周期性目标的光束发生器。 响应于至少一个入射光束，多个输出光束从周期性靶标散射。 该系统还包括用于仅从目标通过第一和第二输出光束的成像透镜系统。 成像系统被适配成使得捕获的光束λ和间距之间的角度间隔被选择为使得第一和第二输出光束形成正弦图像。 该系统还包括用于对正弦图像或图像进行成像的传感器，以及控制器，用于使光束发生器将至少一个入射光束引向周期性目标或目标，并用于分析正弦图像或图像。

公开(公告)号：US20070096094A1

公开(公告)日：2007-05-03

申请号：US11329716

申请日：2006-01-10

申请人： Vladimir Levinski ,  Michael Adel ,  Aviv Frommer ,  Daniel Kandel

发明人： Vladimir Levinski ,  Michael Adel ,  Aviv Frommer ,  Daniel Kandel

IPC分类号： H01L23/58 ,  H01L21/66

CPC分类号： H01L23/544 ,  G03F7/70633 ,  H01L22/12 ,  H01L2223/54453 ,  H01L2223/5448 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods and apparatus for fabricating a semiconductor die including several target structures. A first layer is formed that includes one or more line or trench structures that extend in a first direction. A second layer is formed that includes one or more line or trench structures that extend in a second direction that is perpendicular to the first structure, such that a projection of the target structure along the first direction is independent of the second direction and a projection of the target structure along the second direction is independent of the first direction. A target structure and a method for generating a calibration curve are also described.

摘要翻译： 用于制造包括几个目标结构的半导体管芯的方法和装置。 形成第一层，其包括在第一方向上延伸的一个或多个线或沟槽结构。 形成第二层，其包括在垂直于第一结构的第二方向上延伸的一个或多个线或沟槽结构，使得目标结构沿着第一方向的突起独立于第二方向和投影 沿着第二方向的目标结构与第一方向无关。 还描述了用于产生校准曲线的目标结构和方法。

公开(公告)号：US07526749B2

公开(公告)日：2009-04-28

申请号：US11329716

申请日：2006-01-10

申请人： Vladimir Levinski ,  Michael E. Adel ,  Aviv Frommer ,  Daniel Kandel

发明人： Vladimir Levinski ,  Michael E. Adel ,  Aviv Frommer ,  Daniel Kandel

IPC分类号： G06F17/50

CPC分类号： H01L23/544 ,  G03F7/70633 ,  H01L22/12 ,  H01L2223/54453 ,  H01L2223/5448 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods and apparatus for fabricating a semiconductor die including several target structures. A first layer is formed that includes one or more line or trench structures that extend in a first direction. A second layer is formed that includes one or more line or trench structures that extend in a second direction that is perpendicular to the first structure, such that a projection of the target structure along the first direction is independent of the second direction and a projection of the target structure along the second direction is independent of the first direction. A target structure and a method for generating a calibration curve are also described.

摘要翻译： 用于制造包括几个目标结构的半导体管芯的方法和装置。 形成第一层，其包括在第一方向上延伸的一个或多个线或沟槽结构。 形成第二层，其包括在垂直于第一结构的第二方向上延伸的一个或多个线或沟槽结构，使得目标结构沿着第一方向的突起独立于第二方向和投影 沿着第二方向的目标结构与第一方向无关。 还描述了用于产生校准曲线的目标结构和方法。

公开(公告)号：US08243273B2

公开(公告)日：2012-08-14

申请号：US12455640

申请日：2009-06-04

申请人： Vladimir Levinski ,  Michael Adel ,  Mark Ghinovker ,  Alexander Svizher

发明人： Vladimir Levinski ,  Michael Adel ,  Mark Ghinovker ,  Alexander Svizher

IPC分类号： G01B11/00

CPC分类号： H01L21/67294 ,  H01L21/68

摘要： A semiconductor wafer may include a dummy field configured to enable overlay measurements. The enhanced dummy field may include a plurality of encoding blocs that enable OVL measurements to be made throughout the enhanced dummy field.

摘要翻译： 半导体晶片可以包括被配置为实现覆盖测量的虚拟场。 增强的伪字段可以包括能够在增强的伪字段中进行OVL测量的多个编码块。

公开(公告)号：US20070279630A1

公开(公告)日：2007-12-06

申请号：US11754892

申请日：2007-05-29

申请人： Daniel Kandel ,  Vladimir Levinski ,  Michael Adel ,  Joel Seligson

发明人： Daniel Kandel ,  Vladimir Levinski ,  Michael Adel ,  Joel Seligson

IPC分类号： G01B11/00

CPC分类号： G03F7/70633

摘要： Disclosed are apparatus and methods for measuring a characteristic, such as overlay, of a semiconductor target. In general, order-selected imaging and/or illumination is performed while collecting an image from a target using a metrology system. In one implementation, tunable spatial modulation is provided only in the imaging path of the system. In other implementations, tunable spatial modulation is provided in both the illumination and imaging paths of the system. In a specific implementation, tunable spatial modulation is used to image side-by-side gratings with diffraction orders ±n. The side-by-side gratings may be in different layers or the same layer of a semiconductor wafer. The overlay between the structures is typically found by measuring the distance between centers symmetry of the gratings. In this embodiment, only orders ±n for a given choice of n (where n is an integer and not equal to zero) are selected, and the gratings are only imaged with these diffraction orders.

摘要翻译： 公开了用于测量半导体靶的特性（例如覆盖）的装置和方法。 通常，在使用度量系统从目标物收集图像的同时执行顺序选择的成像和/或照明。 在一个实现中，仅在系统的成像路径中提供可调谐空间调制。 在其他实施方式中，在系统的照明和成像路径中提供可调谐的空间调制。 在具体实现中，可调谐空间调制用于以衍射级±n对并行光栅进行成像。 并排光栅可以在不同的层或相同的半导体晶片层中。 通常通过测量光栅的中心对称性之间的距离来发现结构之间的覆盖。 在本实施例中，对于给定的n（其中n是整数且不等于零）的选择，仅选择±n，并且光栅仅以这些衍射级成像。

公开(公告)号：US07602491B2

公开(公告)日：2009-10-13

申请号：US12108364

申请日：2008-04-23

申请人： Daniel Kandel ,  Vladimir Levinski ,  Michael Adel ,  Joel Seligson

发明人： Daniel Kandel ,  Vladimir Levinski ,  Michael Adel ,  Joel Seligson

IPC分类号： G01B11/00 ,  G01B11/02 ,  G06K9/00

CPC分类号： G01B11/272 ,  G03F7/70633

摘要： A resultant image of a grating target may be obtained by dividing an image of the target into first and second portions and optically modifying the first and/or second portion such that a final image formed from their combination is characterized by a Moiré pattern. The resultant image may be analyzed to determine a shift in the grating target from a shift in the Moiré pattern. Optical alignment apparatus may include a first beam splitter, an image transformation element optically coupled to the first beam splitter, and a second beam splitter. The first beam splitter divides an image of a grating target into first and second portions. The second beam splitter combines the first portion and the second portion. The image transformation element optically modifies the first and/or second portion such that a final image formed from their combination is characterized by a Moiré pattern.

摘要翻译： 可以通过将目标图像划分成第一和第二部分并光学地修改第一和/或第二部分使得由其组合形成的最终图像由莫尔图案表征来获得光栅目标的合成图像。 可以分析所得到的图像以确定光栅目标从莫尔图案的偏移中的偏移。 光学对准装置可以包括第一分束器，光耦合到第一分束器的图像变换元件和第二分束器。 第一分束器将光栅靶的图像分成第一和第二部分。 第二分束器组合第一部分和第二部分。 图像变换元件光学地修改第一和/或第二部分，使得由它们的组合形成的最终图像的特征在于莫尔图案。

公开(公告)号：US20060280357A1

公开(公告)日：2006-12-14

申请号：US11510147

申请日：2006-08-24

申请人： Joel Seligson ,  Mark Ghinovker ,  John Robinson ,  Pavel Izikson ,  Michael Adel ,  Boris Simkin ,  David Tulipman ,  Vladimir Levinski

发明人： Joel Seligson ,  Mark Ghinovker ,  John Robinson ,  Pavel Izikson ,  Michael Adel ,  Boris Simkin ,  David Tulipman ,  Vladimir Levinski

IPC分类号： G06K9/00

CPC分类号： G03F7/705 ,  G03F7/70516 ,  G03F7/70633

摘要： Disclosed are apparatus and methods for obtaining and analyzing various unique metrics or “target diagnostics” from one or more semiconductor overlay targets. In one embodiment, an overlay target is measured to obtain one or both of two specific types of target diagnostic information, systematic error metrics and/or random noise metrics. The systematic error metrics generally quantify asymmetries of the overlay target, while the random noise metrics quantify and/or qualify the spatial noise that is proximate to or associated with the overlay target.

摘要翻译： 公开了用于从一个或多个半导体覆盖目标获取和分析各种独特度量或“目标诊断”的装置和方法。 在一个实施例中，测量覆盖目标以获得两种特定类型的目标诊断信息，系统误差度量和/或随机噪声度量中的一种或两种。 系统误差度量通常量化覆盖目标的不对称性，而随机噪声度量量化和/或限定与覆盖目标邻近或相关联的空间噪声。

公开(公告)号：US20060103836A1

公开(公告)日：2006-05-18

申请号：US11032126

申请日：2005-01-11

申请人： Vladimir Levinski ,  Michael Adel

发明人： Vladimir Levinski ,  Michael Adel

IPC分类号： G01J1/00

CPC分类号： G03F7/70641 ,  G03F1/44

摘要： Within a lithography process having a critical dimension, a method, system and structure for determining a focus deviation value relative to an ideal focus position said is disclosed. By projecting a series of lines or spots characterized by the constant pitch size which is greater than the projection devise optical resolution and incrementally increasing widths onto the surface of the photoactive material, wherein the width of at least one of the lines or sports is substantially the same as the critical dimension, and the widths of the other lines or spots are substantially equally distributed around the critical dimension, approximate focus and exposure dose deviation values may be determined.

摘要翻译： 在具有临界尺寸的光刻工艺中，公开了一种用于确定相对于理想聚焦位置的聚焦偏差值的方法，系统和结构。 通过投射一系列具有恒定间距尺寸的线或点，其大于投射光学分辨率并逐渐增加到光活性材料表面上的宽度，其中至少一条线或运动的宽度基本上是 与临界尺寸相同，并且其他线或点的宽度在临界尺寸周围基本均匀分布，可以确定近似焦点和曝光剂量偏差值。

公开(公告)号：US20080266561A1

公开(公告)日：2008-10-30

申请号：US12108364

申请日：2008-04-23

申请人： Daniel Kandel ,  Vladimir Levinski ,  Michael Adel ,  Joel Seligson

发明人： Daniel Kandel ,  Vladimir Levinski ,  Michael Adel ,  Joel Seligson

IPC分类号： G01B11/14

CPC分类号： G01B11/272 ,  G03F7/70633

摘要： A resultant image of a grating target may be obtained by dividing an image of the target into first and second portions and optically modifying the first and/or second portion such that a final image formed from their combination is characterized by a Moiré pattern. The resultant image may be analyzed to determine a shift in the grating target from a shift in the Moiré pattern. Optical alignment apparatus may include a first beam splitter, an image transformation element optically coupled to the first beam splitter, and a second beam splitter. The first beam splitter divides an image of a grating target into first and second portions. The second beam splitter combines the first portion and the second portion. The image transformation element optically modifies the first and/or second portion such that a final image formed from their combination is characterized by a Moiré pattern.

摘要翻译： 可以通过将目标图像划分成第一和第二部分并光学地修改第一和/或第二部分使得由其组合形成的最终图像由莫尔图案表征来获得光栅目标的合成图像。 可以分析所得到的图像以确定光栅目标从莫尔图案的偏移中的偏移。 光学对准装置可以包括第一分束器，光耦合到第一分束器的图像变换元件和第二分束器。 第一分束器将光栅靶的图像分成第一和第二部分。 第二分束器组合第一部分和第二部分。 图像变换元件光学地修改第一和/或第二部分，使得由它们的组合形成的最终图像的特征在于莫尔图案。