公开(公告)号：US20160280963A1

公开(公告)日：2016-09-29

申请号：US15177727

申请日：2016-06-09

Applicant: BASF SE

Inventor： Zhihua ZHANG ,  Vaibhav DALVI ,  Bir Darbar MEHTA ,  Andreas FECHTENKOETTER ,  Yuzhuo LI ,  Michael LAUTER

IPC: C09G1/02 ,  C23C16/02 ,  H01L21/306 ,  C09K3/14

CPC classification number: C09G1/02 ,  C01B33/18 ,  C01F17/0043 ,  C01P2004/03 ,  C01P2004/32 ,  C01P2004/62 ,  C01P2004/64 ,  C01P2004/84 ,  C09C3/063 ,  C09K3/1436 ,  C09K3/1445 ,  C09K3/1463 ,  C23C16/02 ,  H01L21/30625 ,  H01L21/31053

Abstract: Raspberry-type coated particles comprising a core selected from the group consisting of metal oxides of Si, Ti, Zr, Al, Zn and mixtures thereof with a core size of from 20 to 100 nm wherein the core is coated with CeO2 particles having a particle size below 10 nm; process for preparing raspberry type coated particles comprising the steps of i) providing a mixture containing a) core particles selected from the group of metal oxides of Si, Ti, Zr, Al, Zn and mixtures thereof, with a particle size of from 20 to 100 nm, b) a water soluble Ce-salt and c) water, ii) adding an organic or inorganic base to the mixture of step i) at temperatures of from 10 to 90° C. and iii) aging the mixture at temperatures of from 10 to 90° C.; and polishing agents containing the particles and their use for polishing surfaces (FIG. 1).

公开(公告)号：US20140011362A1

公开(公告)日：2014-01-09

申请号：US13935682

申请日：2013-07-05

Applicant: BASF SE

Inventor： Robert REICHARDT ,  Yuzhuo LI ,  Michael LAUTER

IPC: C09G1/02 ,  H01L21/306

CPC classification number: C09G1/02 ,  C08K5/09 ,  C08K7/00 ,  H01L21/30625 ,  H01L21/3212

Abstract: A chemical mechanical polishing (CMP) composition (Q) comprising (A) Inorganic particles, organic particles, or a mixture or composite thereof, wherein the particles are cocoon-shaped (B) a non-ionic surfactant, (C) an aromatic compound comprising at least one acid group (Y), or a salt thereof, and (M) an aqueous medium.

Abstract translation: 一种化学机械抛光（CMP）组合物（Q），其包含（A）无机颗粒，有机颗粒或其混合物或复合物，其中所述颗粒为茧形（B）非离子表面活性剂，（C）芳族化合物 包含至少一个酸基（Y）或其盐，和（M）水性介质。

公开(公告)号：US20160200943A1

公开(公告)日：2016-07-14

申请号：US14905703

申请日：2014-07-01

Applicant: BASF SE

Inventor： Robert REICHARDT ,  Martin KALLER ,  Michael LAUTER ,  Yuzhuo LI ,  Andreas KLIPP

IPC: C09G1/02 ,  H01L21/321

CPC classification number: C09K3/1463 ,  C09G1/02 ,  H01L21/3212

Abstract: A chemical-mechanical polishing (CMP) composition is provided comprising (A) one or more compounds selected from the group of benzotriazole derivatives which act as corrosion inhibitors and (B) inorganic particles, organic particles, or a composite or mixture thereof. The invention also relates to the use of certain compounds selected from the group of benzotriazole derivatives as corrosion inhibitors, especially for increasing the selectivity of a chemical mechanical polishing (CMP) composition for the removal of tantalum or tantalum nitride from a substrate for the manufacture of a semiconductor device in the presence of copper on said substrate.

Abstract translation: 提供化学机械抛光（CMP）组合物，其包含（A）一种或多种选自作为防腐剂的苯并三唑衍生物的化合物和（B）无机颗粒，有机颗粒或其复合物或混合物。 本发明还涉及使用选自苯并三唑衍生物的某些化合物作为缓蚀剂，特别是用于提高化学机械抛光（CMP）组合物从用于制造钽酸铅的基材中除去钽或氮化钽的选择性 在所述衬底上存在铜的半导体器件。

公开(公告)号：US20160035582A1

公开(公告)日：2016-02-04

申请号：US14884984

申请日：2015-10-16

Applicant: BASF SE

Inventor： Yuzhuo LI ,  Ke WANG

IPC: H01L21/321

CPC classification number: H01L21/3212 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1463

Abstract: A chemical-mechanical polishing composition comprising: (a) at least one type of abrasive particles; (b) at least two oxidizing agents; (c) at least one pH adjusting agent; and (d) deionized water; (e) optionally comprising at least one antioxidant, and a method for the chemical-mechanical planarization of a substrate containing at least one copper layer, at least one ruthenium layer, and at least one tantalum layer comprising the steps of (1) providing the said chemical-mechanical polishing composition; (2) contacting the substrate surface to be polished with the chemical-mechanical polishing composition and a polishing pad; and (3) chemically and mechanically polishing the substrate surface by way of moving the polishing pad relative to the substrate.