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公开(公告)号：US20180158656A1
公开(公告)日：2018-06-07
申请号：US15866878
申请日：2018-01-10
发明人： Jinrong ZHAO , Shaohua LIU , Gang WEI , Yulin PENG , Meng YANG , Yali FU
IPC分类号： H01J37/32 , H01L29/78 , H01L21/687
CPC分类号： H01J37/32715 , H01J37/3211 , H01J37/32183 , H01J37/32477 , H01J37/32816 , H01J37/32834 , H01L21/3065 , H01L21/68714 , H01L29/78 , H01L29/785
摘要： Some embodiments of the present disclosure provide a semiconductor manufacturing apparatus. The semiconductor manufacturing apparatus includes a chamber, a support and a liner. The chamber is configured for plasma processes and includes a chamber wall. The support is configured to hold a wafer in the chamber. The liner is configured to surround the support and includes a top side and a bottom side. The top side is detachably hung on the chamber wall. The bottom side includes gas passages for plasma particles to pass through the liner.
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公开(公告)号：US20240321560A1
公开(公告)日：2024-09-26
申请号：US18698889
申请日：2022-08-25
发明人： Yulin PENG , Jinrong ZHAO
IPC分类号： H01J37/32 , H01L21/66 , H01L21/683
CPC分类号： H01J37/32568 , H01J37/32174 , H01J37/32541 , H01J37/32577 , H01J37/32715 , H01L21/6833 , H01L22/26 , H01J2237/3321 , H01J2237/3341
摘要： The present disclosure generally relates to plasma semiconductor processing and processing tools for such processing. In an example, a processing tool includes a chamber and a substrate support. The chamber has an internal volume within the chamber. The substrate support is disposed in the internal volume in the chamber. The substrate support includes a support surface configured to support a semiconductor substrate in the internal volume in the chamber. The substrate support includes a plurality of radio frequency (RF) electrodes. A dimension of each lateral side of each RF electrode of the RF electrodes is equal to or less than 2% of a wavelength of an RF signal applied to the respective RF electrode. The respective dimension is in a plane parallel to the support surface. The RF electrodes are configured to, at least in part, control a plasma in the internal volume in the chamber.
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公开(公告)号：US20240271310A1
公开(公告)日：2024-08-15
申请号：US18626331
申请日：2024-04-04
发明人： Yicheng LI , Yulin PENG , Yongyou CAO
摘要： A method for preparing reaction chamber component includes providing a substrate; forming an oxide film layer from a surface of the substrate by performing an anodizing treatment with mixed-acids; performing a sealing process to the oxide film layer to seal pores formed in the oxide film layer; performing a sandblasting process to the oxide film layer to provide the oxide film layer with a predetermined roughness for receiving a ceramic layer; and forming the ceramic layer on the oxide film layer.
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公开(公告)号：US20180294177A1
公开(公告)日：2018-10-11
申请号：US16008803
申请日：2018-06-14
发明人： Yulin PENG , Haiying LIU
IPC分类号： H01L21/683 , H01L21/67 , H01L21/687 , H01L21/48 , H01J37/32 , H02N13/00
摘要： An electrostatic chuck mechanism and a semiconductor processing device having the same are provided. The electrostatic chuck mechanism includes a base, an edge assembly, a main electrostatic heating layer, and an edge electrostatic heating layer. The base includes a loading surface for loading a wafer and a step surface surrounding the loading surface and located at an edge portion of the wafer. The edge assembly includes a focus ring disposed above the step surface and surrounding the loading surface, and an insulation ring disposed at a bottom of the base and supporting the base. The main electrostatic heating layer, disposed above the loading surface, is configured to secure the wafer and adjust temperature of the wafer. The edge electrostatic heating layer, disposed above the step surface, is configured to secure the focus ring and adjust temperature of the focus ring.
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