公开(公告)号：US3663279A

公开(公告)日：1972-05-16

申请号：US3663279D

申请日：1969-11-19

Applicant: BELL TELEPHONE LABOR INC

Inventor： LEPSELTER MARTIN P

IPC: H01L21/00 ,  H01L23/29 ,  H01L23/482 ,  H01L7/00

CPC classification number: H01L23/4824 ,  H01L21/00 ,  H01L23/291 ,  H01L2924/0002 ,  Y10T428/12389 ,  Y10T428/12396 ,  Y10T428/12528 ,  Y10T428/1259 ,  Y10T428/12604 ,  Y10T428/12618 ,  Y10T428/12778 ,  H01L2924/00

Abstract: Coatings of refractory metal oxides are provided over the surface of semiconductor devices for chemical and mechanical passivation. The oxide coatings are formed by depositing a layer of refractory metal and oxidizing in situ. In a specific example, the refractory metal is zirconium.

Abstract translation: 在化学和机械钝化的半导体器件的表面上提供难熔金属氧化物的涂层。 氧化物涂层通过沉积难熔金属层并原位氧化而形成。 在具体实例中，难熔金属是锆。

公开(公告)号：US3599054A

公开(公告)日：1971-08-10

申请号：US3599054D

申请日：1968-11-22

Applicant: BELL TELEPHONE LABOR INC

Inventor： LEPSELTER MARTIN P ,  MACRAE ALFRED U

IPC: H01L21/00 ,  H01L23/482 ,  H01L29/872 ,  H01L9/00

CPC classification number: H01L29/872 ,  H01L21/00 ,  H01L23/482 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The specification describes an improved barrier layer device which utilizes an oxide guard ring around the barrier layer. An insulating guard ring is shown to be superior to the PN junction guard ring of the prior art. Manufacturing methods for forming oxide guard rings are also discussed. These involve forming the oxide layer by exposure to an oxygen plasma.

公开(公告)号：US3590471A

公开(公告)日：1971-07-06

申请号：US3590471D

申请日：1969-02-04

Applicant: BELL TELEPHONE LABOR INC

Inventor： LEPSELTER MARTIN P ,  MACRAE ALFRED U

IPC: H01L21/00 ,  H01L23/485 ,  H01L29/00 ,  H01L29/45 ,  B01J17/00 ,  H01G13/00

CPC classification number: H01L29/456 ,  H01L21/00 ,  H01L23/485 ,  H01L29/00 ,  H01L2924/0002 ,  Y10S148/053 ,  Y10S148/139 ,  Y10S148/145 ,  H01L2924/00

Abstract: An insulated gate field-effect transistor is made which utilizes both Schottky barrier connections and ion-implanted zones. The resultant structure incorporates source and drain zones, which are formed by ion implantation and whose spacing is fixed by the gate electrode, and source and drain electrodes which make ohmic connection to the implanted source and drain zones and rectifying connections to unimplanted material.

Abstract translation: 制造了采用肖特基势垒连接和离子注入区的绝缘栅场效应晶体管。 所得结构包括源极和漏极区，其通过离子注入形成并且其间隔由栅电极固定，以及源极和漏极，其与植入的源极和漏极区域欧姆连接并且与未投影材料的整流连接。

公开(公告)号：US3253951A

公开(公告)日：1966-05-31

申请号：US20311662

申请日：1962-06-18

Applicant: BELL TELEPHONE LABOR INC

Inventor： MARINACCIO LOUIS P ,  LEPSELTER MARTIN P

IPC: H01L21/00 ,  H01L21/285 ,  H01L23/482 ,  H01L31/0224

CPC classification number: H01L31/022425 ,  H01L21/00 ,  H01L21/2855 ,  H01L23/4827 ,  H01L2924/0002 ,  Y02E10/50 ,  H01L2924/00

公开(公告)号：US3647585A

公开(公告)日：1972-03-07

申请号：US3647585D

申请日：1969-05-23

Applicant: BELL TELEPHONE LABOR INC

Inventor： FRITZINGER LARRY B ,  LEPSELTER MARTIN P

IPC: H01L21/00 ,  H01L23/29 ,  H01L23/522 ,  H01L49/02 ,  H05K3/46 ,  H01L7/50 ,  H05K3/06

CPC classification number: H05K3/4685 ,  H01L21/00 ,  H01L23/29 ,  H01L23/522 ,  H01L49/02 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PINHOLE SHORTS ARE ELIMINATED IN AN AIR-ISOLATED CROSSOVER BY INCLUDING A COMPRESSIVELY STRESSED LAYER IN THE UPPER CONDUCTOR. WHEN A FILLER MATERIAL BETWEEN THE UPPER AND LOWER CONDUCTORS IS ETCHED AWAY, THE STRESSED LAYER WILL EXPAND, CAUSING THE UPPER CONDUCTOR TO ARCH AWAY FROM THE LOWER CONDUCTOR AND BREAKING AND PINHOLE SHORTS BETWEEN THE TWO CONDUCTORS.

公开(公告)号：US3479269A

公开(公告)日：1969-11-18

申请号：US3479269D

申请日：1967-01-04

Applicant: BELL TELEPHONE LABOR INC

Inventor： BYRNES PETER A JR ,  LEPSELTER MARTIN P

IPC: B23P9/00 ,  C08L25/00 ,  C23C14/35 ,  H01H11/04 ,  C23C15/00

CPC classification number: C23C14/35 ,  B23P9/00 ,  C08L25/00 ,  H01H11/04

公开(公告)号：US3461524A

公开(公告)日：1969-08-19

申请号：US3461524D

申请日：1966-11-02

Applicant: BELL TELEPHONE LABOR INC

Inventor： LEPSELTER MARTIN P

IPC: H01L49/02 ,  H05K3/46 ,  H01G13/00

CPC classification number: H05K3/4685 ,  H01L49/02 ,  Y10T29/435 ,  Y10T29/4981 ,  Y10T29/49812

公开(公告)号：US3335338A

公开(公告)日：1967-08-08

申请号：US38803964

申请日：1964-08-07

Applicant: BELL TELEPHONE LABOR INC

Inventor： LEPSELTER MARTIN P

IPC: A01N43/80 ,  C07D275/04 ,  D06L1/04 ,  H01J37/34 ,  H01L21/00 ,  H01L21/762 ,  H01L21/764 ,  H01L23/485 ,  H01L23/522 ,  H01L23/532 ,  H01L27/06 ,  H01L29/00

CPC classification number: C07D275/04 ,  A01N43/80 ,  C10M2201/02 ,  C10M2219/10 ,  C10M2219/102 ,  C10M2219/104 ,  C10M2219/106 ,  C10N2240/401 ,  D06L1/04 ,  H01J37/34 ,  H01L21/00 ,  H01L21/76264 ,  H01L21/76289 ,  H01L21/764 ,  H01L23/485 ,  H01L23/522 ,  H01L23/53242 ,  H01L23/53252 ,  H01L27/0658 ,  H01L29/00 ,  H01L2924/0002 ,  H01L2924/00

Abstract: 1,082,319. Semi-conductor devices. WESTERN ELECTRIC CO. Inc. Oct. 14, 1964 [Dec. 17, 1963; Feb. 25, 1964; Aug. 7, 1964], No. 8614/67. Divided out of 1,082,317. Heading H1K. An integrated circuit consists of an array of substrate bodies (e.g. of semi-conductor material, though a thin-film circuit in which the substrate is of carbon or ceramic material is also envisaged), the bodies being joined by a pattern of metal contacts which extend substantially in one plane over the surfaces of the bodies and provide bridges between them. The bridging portions are of sufficient thickness to provide the only mechanical support necessary to maintain the bodies in their appropriate relative positions in the array. Each separate body may contain one or more elements of the circuit. The elements of the circuit are first formed (e.g. by conventional diffusion techniques) in a single substrate member and metallic deposits 117, 118 &c. are then laid down to provide the interconnections between the various elements. Such deposits may consist of sequentially deposited " active " and " contact " metals as described in Specification 1,082,317. The portions of these deposits which will ultimately provide the bridges 119, 120 &c. between the separate bodies are then built up by further deposition, e.g. to a thickness of 100,000 Š as against 1000 to 5000 Š for the deposits elsewhere. The electrode portion (the initial deposits) may be of platinum on titanium and the thickening produced by masked deposition of gold. The substrate material underlying the bridging portions is then removed, e.g. by etching with wax masking-though mechanical abrasion or ionic bombardment are also mentioned in this connection.

公开(公告)号：US3307239A

公开(公告)日：1967-03-07

申请号：US34569664

申请日：1964-02-18

Applicant: BELL TELEPHONE LABOR INC

Inventor： LEPSELTER MARTIN P ,  NAYMIK DANIEL A

IPC: H01L21/00 ,  H01L23/522

CPC classification number: H01L21/00 ,  H01L23/522 ,  H01L2924/0002 ,  Y10S257/926 ,  H01L2924/00

公开(公告)号：US3616380A

公开(公告)日：1971-10-26

申请号：US3616380D

申请日：1968-11-22

Applicant: BELL TELEPHONE LABOR INC

Inventor： LEPSELTER MARTIN P ,  LIGENZA JOSEPH R

IPC: C23C8/36 ,  H01L21/00 ,  H01L21/285 ,  H01L21/768 ,  H01L23/29 ,  H01L23/485 ,  H01L29/00 ,  B01K1/00

CPC classification number: H01L23/485 ,  C23C8/36 ,  H01L21/00 ,  H01L21/28581 ,  H01L21/76889 ,  H01L23/291 ,  H01L29/00 ,  H01L2924/0002 ,  Y10S148/106 ,  Y10S148/117 ,  Y10S148/139 ,  H01L2924/00

Abstract: The specification describes an improved barrier layer device which utilizes an oxide guard ring around the barrier layer. An insulating guard ring is shown to be superior to the PN junction guard ring of the prior art. Manufacturing methods for forming oxide guard rings are also discussed. These involve forming the oxide layer by exposure to an oxygen plasma.