公开(公告)号：US20180277344A1

公开(公告)日：2018-09-27

申请号：US15541883

申请日：2017-01-03

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhongpeng TIAN ,  Xuewei GAO ,  Lei XIAO ,  Jianhua DU

IPC: H01J37/34 ,  C23C14/35 ,  C23C14/54

Abstract: A magnetron sputtering device, a magnetron sputtering apparatus, and a magnetron sputtering method are provided. The magnetron sputtering device includes: a target material bearing portion, configured to bear a target material thereon; a magnet bearing section, configured to bear a magnet thereon and to be capable of driving the magnet to perform reciprocating motion along a predetermined path with respect to the target material bearing portion; a limit sensor, configured to determine an end-point position of the predetermined path along which the magnet performs reciprocating motion; the end-point position determined by the limit sensor can be adjusted along the predetermined path during a working procedure of the magnetron sputtering device.

公开(公告)号：US20250098212A1

公开(公告)日：2025-03-20

申请号：US18963664

申请日：2024-11-28

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jie HUANG ,  Jiayu HE ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Fengjuan LIU ,  Nianqi YAO ,  Kun ZHAO ,  Tianmin ZHOU ,  Jiushi WANG ,  Zhongpeng TIAN

IPC: H01L29/786 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/66

Abstract: The present disclosure relates to the field of display technologies, and in particular to a thin film transistor and a method for manufacturing the same, an array substrate and a display device. An active layer of the thin film transistor includes at least two metal oxide semi-conductor layers, the at least two metal oxide semi-conductor layers include a channel layer and a first protection layer, and metals in the channel layer include at least one of indium, gallium and zinc. Praseodymium is doped into the channel layer. And, in the channel layer, a number density of praseodymium atoms in the channel layer gradually decreases with a distance from the first protection layer.

公开(公告)号：US20240355978A1

公开(公告)日：2024-10-24

申请号：US18254210

申请日：2022-04-21

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Nianqi YAO ,  Zhongpeng TIAN ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Jie HUANG ,  Jiayu HE ,  Feifei LI ,  Kun ZHAO ,  Yimin CHEN

IPC: H01L33/62 ,  G02F1/13357 ,  H05K3/46

CPC classification number: H01L33/62 ,  G02F1/133603 ,  H05K3/4688

Abstract: A circuit board includes a substrate and a stress neutral layer disposed on a side of the substrate. The stress neutral layer includes one or more first metal layers and one or more second metal layers. The one or more second metal layers and the one or more first metal layers are stacked. At least one of the one or more first metal layers is made of a material for generating a tensile stress, and at least one of the one or more second metal layers is made of a material for generating a compressive stress.