Optical endpoint detection system
    1.
    发明授权
    Optical endpoint detection system 有权
    光端点检测系统

    公开(公告)号:US09347132B2

    公开(公告)日:2016-05-24

    申请号:US13440564

    申请日:2012-04-05

    摘要: Methods and apparatus for determining an endpoint of a process chamber cleaning process are provided. In some embodiments, a processing system having an endpoint detection system may include a process chamber having internal surfaces requiring periodic cleaning due to processes performed in the process chamber; and an endpoint detection system that includes a light detector positioned to detect light reflected off of a first internal surface of the process chamber; and a controller coupled to the light detector and configured to determine an endpoint of a cleaning process based upon the detected reflected light.

    摘要翻译: 提供了用于确定处理室清洁过程的端点的方法和装置。 在一些实施例中,具有端点检测系统的处理系统可以包括处理室,其具有由于处理室中执行的处理而需要定期清洁的内表面; 以及端点检测系统,其包括被定位成检测从所述处理室的第一内表面反射的光的光检测器; 以及耦合到光检测器并被配置为基于检测到的反射光来确定清洁处理的端点的控制器。

    Method and apparatus for reducing patterning effects on a substrate during radiation-based heating
    2.
    发明授权
    Method and apparatus for reducing patterning effects on a substrate during radiation-based heating 有权
    用于在基于辐射的加热期间减少对基板的图案化影响的方法和装置

    公开(公告)号:US08513626B2

    公开(公告)日:2013-08-20

    申请号:US11622908

    申请日:2007-01-12

    IPC分类号: G02B5/00

    CPC分类号: H01L21/67248 H01L21/67115

    摘要: Patterning effects on a substrate are reduced during radiation-based heating by filtering the radiation source or configuring the radiation source to produce radiation having different spectral characteristics. For the filtering, an optical filter may be used to truncate specific wavelengths of the radiation. The different configurations of the radiation source include a combination of one or more continuum radiation sources with one or more discrete spectrum sources, a combination of multiple discrete spectrum sources, or a combination of multiple continuum radiation sources. Furthermore, one or more of the radiation sources may be configured to have a substantially non-normal angle of incidence or polarized to reduce patterning effects on a substrate during radiation-based heating.

    摘要翻译: 通过过滤辐射源或配置辐射源产生具有不同光谱特性的辐射,在基于辐射的加热过程中,对衬底的图案化效果降低。 为了滤波,可以使用滤光器来截断辐射的特定波长。 辐射源的不同配置包括一个或多个连续辐射源与一个或多个离散光谱源,多个离散光谱源的组合或多个连续辐射源的组合的组合。 此外,一个或多个辐射源可以被配置为具有基本上非正常的入射角或极化,以减少基于辐射的加热期间对衬底的图案化效应。

    Method and Apparatus for Reducing Patterning Effects on a Substrate During Radiation-Based Heating
    4.
    发明申请
    Method and Apparatus for Reducing Patterning Effects on a Substrate During Radiation-Based Heating 有权
    用于减少基于辐射的加热过程中衬底的图案效应的方法和装置

    公开(公告)号:US20080171417A1

    公开(公告)日:2008-07-17

    申请号:US11622908

    申请日:2007-01-12

    IPC分类号: H01L21/336

    CPC分类号: H01L21/67248 H01L21/67115

    摘要: Patterning effects on a substrate are reduced during radiation-based heating by filtering the radiation source or configuring the radiation source to produce radiation having different spectral characteristics. For the filtering, an optical filter may be used to truncate specific wavelengths of the radiation. The different configurations of the radiation source include a combination of one or more continuum radiation sources with one or more discrete spectrum sources, a combination of multiple discrete spectrum sources, or a combination of multiple continuum radiation sources. Furthermore, one or more of the radiation sources may be configured to have a substantially non-normal angle of incidence or polarized to reduce patterning effects on a substrate during radiation-based heating.

    摘要翻译: 通过过滤辐射源或配置辐射源产生具有不同光谱特性的辐射,在基于辐射的加热过程中,对衬底的图案化效果降低。 为了滤波,可以使用滤光器来截断辐射的特定波长。 辐射源的不同配置包括一个或多个连续辐射源与一个或多个离散光谱源,多个离散光谱源的组合或多个连续辐射源的组合的组合。 此外,一个或多个辐射源可以被配置为具有基本上非正常的入射角或极化,以减少基于辐射的加热期间对衬底的图案化效应。

    Laser noise elimination in transmission thermometry

    公开(公告)号:US10421151B2

    公开(公告)日:2019-09-24

    申请号:US13789982

    申请日:2013-03-08

    摘要: Apparatus and methods for measuring the temperature of a substrate are disclosed. The apparatus includes a source of temperature-indicating radiation, a detector for the temperature-indicating radiation, and a decorrelator disposed in an optical path between the source of temperature-indicating radiation and the detector for the temperature-indicating radiation. The decorrelator may be a broadband amplifier and/or a mode scrambler. A broadband amplifier may be a broadband laser, Bragg grating, a fiber Bragg grating, a Raman amplifier, a Brillouin amplifier, or combinations thereof. The decorrelator is selected to emit radiation that is transmitted, at least in part, by the substrate being monitored. The source is matched to the decorrelator such that the emission spectrum of the source is within the gain bandwidth of the decorrelator, if the decorrelator is a gain-driven device.

    Spike anneal residence time reduction in rapid thermal processing chambers
    7.
    发明授权
    Spike anneal residence time reduction in rapid thermal processing chambers 有权
    快速热处理室中尖峰退火停留时间的减少

    公开(公告)号:US08939760B2

    公开(公告)日:2015-01-27

    申请号:US13370164

    申请日:2012-02-09

    IPC分类号: F27D15/02

    摘要: The present invention generally relates to methods of cooling a substrate during rapid thermal processing. The methods generally include positioning a substrate in a chamber and applying heat to the substrate. After the temperature of the substrate is increased to a desired temperature, the substrate is rapidly cooled. Rapid cooling of the substrate is facilitated by increasing a flow rate of a gas through the chamber. Rapid cooling of the substrate is further facilitated by positioning the substrate in close proximity to a cooling plate. The cooling plate removes heat from substrate via conduction facilitated by gas located therebetween. The distance between the cooling plate and the substrate can be adjusted to create a turbulent gas flow therebetween, which further facilitates removal of heat from the substrate. After the substrate is sufficiently cooled, the substrate is removed from the chamber.

    摘要翻译: 本发明一般涉及在快速热处理期间冷却衬底的方法。 所述方法通常包括将基底定位在腔室中并向基底施加热量。 在将衬底的温度升高到所需温度之后,快速冷却衬底。 通过增加通过室的气体的流速来促进衬底的快速冷却。 通过将衬底定位在靠近冷却板的方式进一步促进衬底的快速冷却。 冷却板通过由位于其间的气体促进的传导从衬底去除热量。 可以调节冷却板和基板之间的距离以在它们之间产生湍流气流,这进一步有助于从基板去除热量。 在衬底充分冷却之后,将衬底从腔室中取出。

    System for non radial temperature control for rotating substrates
    8.
    发明授权
    System for non radial temperature control for rotating substrates 有权
    用于旋转基板的非径向温度控制系统

    公开(公告)号:US08724977B2

    公开(公告)日:2014-05-13

    申请号:US13548858

    申请日:2012-07-13

    IPC分类号: A21B2/00

    摘要: Embodiments of the present invention provide apparatus and method for reducing non uniformity during thermal processing. One embodiment provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to rotate the substrate, a sensor assembly configured to measure temperature of the substrate at a plurality of locations, and one or more pulse heating elements configured to provide pulsed energy towards the processing volume.

    摘要翻译: 本发明的实施例提供了用于降低热处理期间的不均匀性的装置和方法。 一个实施例提供了一种用于处理衬底的装置,其包括限定处理体积的室主体,设置在处理容积中的衬底支撑件,其中衬底支撑件被配置为使衬底旋转;传感器组件,被配置为测量衬底的温度 多个位置,以及一个或多个脉冲加热元件,其配置成向处理体积提供脉冲能量。

    CRYSTALLIZATION METHODS
    10.
    发明申请
    CRYSTALLIZATION METHODS 有权
    结晶方法

    公开(公告)号:US20130055731A1

    公开(公告)日:2013-03-07

    申请号:US13601069

    申请日:2012-08-31

    IPC分类号: F25D31/00

    摘要: Apparatus and methods of treating a substrate with an amorphous semiconductor layer, or a semiconductor layer having small crystals, to form large crystals in the substrate are described. A treatment area of the substrate is identified and melted using a progressive melting process of delivering pulsed energy to the treatment area. The treatment area is then recrystallized using a progressive crystallization process of delivering pulsed energy to the area. The pulsed energy delivered during the progressive crystallization process is selected to convert the small crystals into large crystals as the melted material freezes.

    摘要翻译: 描述了用非晶半导体层或具有小晶体的半导体层处理衬底以在衬底中形成大晶体的装置和方法。 使用将脉冲能量递送到处理区域的渐进熔融方法来鉴定和熔化基底的处理区域。 然后使用将脉冲能量递送到该区域的逐步结晶过程将处理区域重结晶。 选择渐进式结晶过程中输送的脉冲能量,以使熔融材料冻结时将小晶体转化为大晶体。