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    Method for fabricating organic thin film transistor
    1.
    发明申请
    Method for fabricating organic thin film transistor 有权
    制造有机薄膜晶体管的方法

    公开(公告)号：US20060128083A1

    公开(公告)日：2006-06-15

    申请号：US11123120

    申请日：2005-05-06

    申请人： Hyun Park ,  Bon Koo ,  Joo Kim ,  Jung Shin ,  Eun Jeong ,  Sang Lee

    发明人： Hyun Park ,  Bon Koo ,  Joo Kim ,  Jung Shin ,  Eun Jeong ,  Sang Lee

    IPC分类号： H01L21/8234

    CPC分类号： H01L51/0529 ,  H01L51/0036 ,  H01L51/0052 ,  H01L51/0078 ,  H01L51/052 ,  H01L51/105

    摘要： Disclosed herein is a method for fabricating an organic thin film transistor comprising a gate electrode, a gate insulating film, source/drain electrodes and an organic semiconductor layer formed in this order on a substrate wherein the surface of the gate insulating film on which source/drain electrodes are formed is impregnated with an inorganic or organic acid, followed by annealing. According to the method, the surface of a gate insulating film damaged by a photoresist process can be effectively recovered. In addition, organic thin film transistors having high charge carrier mobility and high on/off current ratio can be fabricated.

    摘要翻译： 本文公开了一种制造有机薄膜晶体管的方法，其包括在基板上依次形成的栅电极，栅极绝缘膜，源极/漏极和有机半导体层，其中栅极绝缘膜的表面上的源极/ 形成漏电极用无机酸或有机酸浸渍，然后进行退火。 根据该方法，可以有效地回收由光刻胶工艺损坏的栅极绝缘膜的表面。 此外，可以制造具有高电荷载流子迁移率和高导通/截止电流比的有机薄膜晶体管。

    Organic thin film transistor including fluorine-based polymer thin film and method of fabricating the same
    2.
    发明申请
    Organic thin film transistor including fluorine-based polymer thin film and method of fabricating the same 有权
    包含氟基聚合物薄膜的有机薄膜晶体管及其制造方法

    公开(公告)号：US20060151781A1

    公开(公告)日：2006-07-13

    申请号：US11296704

    申请日：2005-12-08

    申请人： Joo Kim ,  Eun Lee ,  Bang Lee ,  Bon Koo ,  Hyun Park ,  Sang Lee

    发明人： Joo Kim ,  Eun Lee ,  Bang Lee ,  Bon Koo ,  Hyun Park ,  Sang Lee

    IPC分类号： H01L29/08

    CPC分类号： H01L21/0212 ,  H01L21/02282 ,  H01L21/3127 ,  H01L21/31691 ,  H01L51/0036 ,  H01L51/052 ,  H01L51/0529 ,  H01L51/0541 ,  H01L51/0545

    摘要： An organic thin film transistor including a fluorine-based polymer thin film and method of fabricating the same. The organic thin film transistor may include a gate electrode, a gate insulating layer, an organic semiconductor layer, source electrode, and a drain electrode formed on a substrate wherein a fluorine-based polymer thin film may be formed (or deposited) at the interface between the gate insulating layer and the organic semiconductor layer. The organic thin film transistor may have higher charge carrier mobility and/or higher on/off current ratio (Ion/Ioff). In addition, a polymer organic semiconductor may be used to form the insulating layer and the organic semiconductor layer by wet processes, so the organic thin film transistor may be fabricated by simplified procedure(s) at reduced costs.

    摘要翻译： 包含氟基聚合物薄膜的有机薄膜晶体管及其制造方法。 有机薄膜晶体管可以包括形成在基板上的栅电极，栅极绝缘层，有机半导体层，源电极和漏电极，其中可以在界面处形成（或沉积）氟基聚合物薄膜 在栅绝缘层和有机半导体层之间。 有机薄膜晶体管可具有较高的电荷载流子迁移率和/或较高的导通/截止电流比（I />）。 此外，可以使用聚合物有机半导体通过湿法形成绝缘层和有机半导体层，因此有机薄膜晶体管可以通过简化的程序以降低的成本制造。

    Organic insulator composition, organic insulating film having the same, organic thin film transistor having the same and electronic device having the same and methods of forming the same
    3.
    发明申请
    Organic insulator composition, organic insulating film having the same, organic thin film transistor having the same and electronic device having the same and methods of forming the same 有权
    有机绝缘体组合物，具有该有机绝缘体组合物的有机绝缘膜，具有该有机绝缘体组合物的有机薄膜晶体管和具有该有机绝缘体组合物的电子器件及其形成方法

    公开(公告)号：US20070129473A1

    公开(公告)日：2007-06-07

    申请号：US11481843

    申请日：2006-07-07

    申请人： Jung Shin ,  Eun Lee ,  Eun Jeong ,  Joo Kim ,  Hyun Moon ,  Sang Lee

    发明人： Jung Shin ,  Eun Lee ,  Eun Jeong ,  Joo Kim ,  Hyun Moon ,  Sang Lee

    IPC分类号： C04B41/50 ,  B60C1/00

    CPC分类号： H01L51/052 ,  H01L21/02126 ,  H01L21/02175 ,  H01L21/3122 ,  H01L51/0036 ,  H01L51/0055 ,  Y10T428/31663

    摘要： Example embodiments of the present invention relate to an organic insulator composition, an organic insulating film having the organic insulator composition, an organic thin film transistor having the organic insulating film, an electronic device having the organic thin film transistor and methods of forming the same. Other example embodiments of the present invention relate to an organic insulator composition including a fluorinated silane compound that may be used to improve the charge carrier mobility and hysteresis of an organic thin film transistor. An organic insulator composition including a fluorinated silane compound and an organic thin film transistor using the same is provided. The hysteresis and physical properties, e.g., threshold voltage and/or charge carrier mobility, of the organic thin film transistor may be improved by the use of the organic insulator composition. The organic thin film transistor may be effectively used in the manufacture of a variety of electronic devices including liquid crystal displays (LCDs) and/or photovoltaic devices.

    摘要翻译： 本发明的实施例涉及有机绝缘体组合物，具有有机绝缘体组合物的有机绝缘膜，具有有机绝缘膜的有机薄膜晶体管，具有有机薄膜晶体管的电子器件及其形成方法。 本发明的其它示例性实施方案涉及包含可用于改善有机薄膜晶体管的载流子迁移率和滞后的氟化硅烷化合物的有机绝缘体组合物。 提供了包含氟化硅烷化合物和使用其的有机薄膜晶体管的有机绝缘体组合物。 可以通过使用有机绝缘体组合物来改善有机薄膜晶体管的滞后和物理性质，例如阈值电压和/或电荷载流子迁移率。 有机薄膜晶体管可以有效地用于制造包括液晶显示器（LCD）和/或光伏器件的各种电子器件。

    Embedded stressor structure and process
    7.
    发明申请
    Embedded stressor structure and process 有权
    嵌入式应力器结构与过程

    公开(公告)号：US20070132038A1

    公开(公告)日：2007-06-14

    申请号：US11297522

    申请日：2005-12-08

    申请人： Yung Chong ,  Zhijiong Luo ,  Joo Kim ,  Brian Greene ,  Kern Rim

    发明人： Yung Chong ,  Zhijiong Luo ,  Joo Kim ,  Brian Greene ,  Kern Rim

    IPC分类号： H01L29/76

    CPC分类号： H01L21/823814 ,  H01L21/823807 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7848

    摘要： An example embodiments are structures and methods for forming an FET with embedded stressor S/D regions (e.g., SiGe), a doped layer below the embedded S/D region adjacent to the isolation regions, and a stressor liner over reduced spacers of the FET gate. An example method comprising the following. We provide a gate structure over a first region in a substrate. The gate structure is comprised of gate dielectric, a gate, and sidewall spacers. We provide isolation regions in the first region spaced from the gate structure; and a channel region in the substrate under the gate structure. We form S/D recesses in the first region in the substrate adjacent to the sidewall spacers. We form S/D stressor regions filling the S/D recesses. The S/D stressor regions can be thicker adjacent to the gate structure than adjacent to the isolation regions; We implant dopant ions into the S/D stressor regions and into the substrate below the S/D stressor regions adjacent to the isolation regions to form upper stressor doped regions.

    摘要翻译： 示例性实施例是用于形成具有嵌入的应力源S / D区域（例如，SiGe）的FET的结构和方法，位于与隔离区域相邻的嵌入式S / D区域下方的掺杂层，以及FET上减少的间隔物上的应力衬垫 门。 包括以下的示例性方法。 我们在衬底的第一区域上提供栅极结构。 栅极结构由栅极电介质，栅极和侧壁间隔物组成。 我们提供与栅极结构间隔开的第一区域中的隔离区域; 以及栅极结构下的衬底中的沟道区。 我们在邻近侧壁间隔物的衬底的第一区域中形成S / D凹槽。 形成填充S / D凹槽的S / D应力区域。 与隔离区相邻的S / D应力区可以比栅极结构更厚; 我们将掺杂剂离子注入到S / D应力区域中并进入与隔离区域相邻的S / D应力区域下方的衬底中以形成上部应力源掺杂区域。

    Thermosensitive and biocompatible amphiphilic poly(organophosphazenes) and preparation method thereof
    9.
    发明申请
    Thermosensitive and biocompatible amphiphilic poly(organophosphazenes) and preparation method thereof 失效
    热敏和生物相容性两亲性聚（有机膦腈）及其制备方法

    公开(公告)号：US20060063910A1

    公开(公告)日：2006-03-23

    申请号：US11229525

    申请日：2005-09-20

    申请人： Youn Soo Sohn ,  Ji Jeon Seong ,  Yong Jun ,  Joo Kim

    发明人： Youn Soo Sohn ,  Ji Jeon Seong ,  Yong Jun ,  Joo Kim

    IPC分类号： C08G69/42

    CPC分类号： C08G69/42

    摘要： The present invention relates to a thermosensitive and biocompatible poly(organophosphazenes) represented by Formula 1, and a preparation method thereof: wherein R is a methyl or ethyl group; R′ is selected from the group consisting of COOR, CH2COOR, CH2CH2COOR, CH2CH(CH3)2, CH2C6H5, CH(CH3)CH2CH3 and CH3; R″ is selected from the group consisting of CH2COOR, CH2CH2COOR, CH2CH(CH3)2, CH2C6H5, CH(CH3)CH2CH3 and CH3; R′″ is a group selected from the group consisting of CH2COOR, CH2CH2COOR and H, wherein R is the same as defined above; n is a number between from 30 to 100; x is a number selected from the integers of 3, 4, 7, 12 and 16; y is a number between from 0.5 to 1.5; a equals to 1; and b and c equal to 0 or 1.

    摘要翻译： 本发明涉及由式1表示的热敏和生物相容性聚（有机膦腈）及其制备方法：