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    Protective layer to enable damage free gap fill
    1.
    发明授权
    Protective layer to enable damage free gap fill 有权
    保护层使无损空隙填充

    公开(公告)号：US08133797B2

    公开(公告)日：2012-03-13

    申请号：US12122614

    申请日：2008-05-16

    申请人： Bart van Schravendijk ,  Richard S. Hill ,  Wilbert van den Hoek ,  Harald te Nijenhuis

    发明人： Bart van Schravendijk ,  Richard S. Hill ,  Wilbert van den Hoek ,  Harald te Nijenhuis

    IPC分类号： H01L21/76

    CPC分类号： H01L21/76224 ,  C23C16/045 ,  C23C16/401 ,  H01L21/76801

    摘要： In-situ semiconductor process that can fill high aspect ratio (typically at least 6:1, for example 7:1 or higher), narrow width (typically sub 0.13 micron, for example 0.1 micron or less) gaps without damaging underlying features and little or no incidence of voids or weak spots is provided. A protective layer is deposited to protect underlying features in regions of the substrate having lower feature density so that unwanted material may be removed from regions of the substrate having higher feature density. This protective layer may deposits thicker on a low density feature than on a high density feature and may be deposited using a PECVD process or low sputter/deposition ratio HDP CVD process. This protective layer may also be a metallic oxide layer that is resistant to fluorine etching, such as zirconium oxide (ZrO2) or aluminum oxide (Al2O3).

    摘要翻译： 可以填充高纵横比（通常至少6:1，例如7:1或更高），窄宽度（通常为0.13微米，例如0.1微米或更小）的间隙的原位半导体工艺，而不损坏底层特征和少量 或者不提供空隙或弱点的发生。 沉积保护层以保护具有较低特征密度的衬底区域中的底层特征，使得可以从具有较高特征密度的衬底的区域去除不需要的材料。 该保护层可以在低密度特征上比在高密度特征上沉积更厚，并且可以使用PECVD工艺或低溅射/沉积比HDP CVD工艺沉积。 该保护层也可以是耐氟蚀刻的金属氧化物层，例如氧化锆（ZrO 2）或氧化铝（Al 2 O 3）。

    Protective Layer To Enable Damage Free Gap Fill
    2.
    发明申请
    Protective Layer To Enable Damage Free Gap Fill 有权
    保护层可以防止空隙填充

    公开(公告)号：US20090286381A1

    公开(公告)日：2009-11-19

    申请号：US12122614

    申请日：2008-05-16

    申请人： Bart van Schravendijk ,  Richard S. Hill ,  Wilbert van den Hoek ,  Harald te Nijenhuis

    发明人： Bart van Schravendijk ,  Richard S. Hill ,  Wilbert van den Hoek ,  Harald te Nijenhuis

    IPC分类号： H01L21/762

    CPC分类号： H01L21/76224 ,  C23C16/045 ,  C23C16/401 ,  H01L21/76801

    摘要： In-situ semiconductor process that can fill high aspect ratio (typically at least 6:1, for example 7:1 or higher), narrow width (typically sub 0.13 micron, for example 0.1 micron or less) gaps without damaging underlying features and little or no incidence of voids or weak spots is provided. A protective layer is deposited to protect underlying features in regions of the substrate having lower feature density so that unwanted material may be removed from regions of the substrate having higher feature density. This protective layer may deposits thicker on a low density feature than on a high density feature and may be deposited using a PECVD process or low sputter/deposition ratio HDP CVD process. This protective layer may also be a metallic oxide layer that is resistant to fluorine etching, such as zirconium oxide (ZrO2) or aluminum oxide (Al2O3).

    摘要翻译： 可以填充高纵横比（通常至少6:1，例如7:1或更高），窄宽度（通常为0.13微米，例如0.1微米或更小）的间隙的原位半导体工艺，而不损坏底层特征和少量 或者不提供空隙或弱点的发生。 沉积保护层以保护具有较低特征密度的衬底区域中的底层特征，使得可以从具有较高特征密度的衬底的区域去除不需要的材料。 该保护层可以在低密度特征上比在高密度特征上沉积更厚，并且可以使用PECVD工艺或低溅射/沉积比HDP CVD工艺沉积。 该保护层也可以是耐氟蚀刻的金属氧化物层，例如氧化锆（ZrO 2）或氧化铝（Al 2 O 3）。

    Atomic layer removal for high aspect ratio gapfill
    4.
    发明授权
    Atomic layer removal for high aspect ratio gapfill 有权
    用于高纵横比填缝的原子层去除

    公开(公告)号：US07981763B1

    公开(公告)日：2011-07-19

    申请号：US12341943

    申请日：2008-12-22

    申请人： Bart van Schravendijk ,  Harald te Nijenhuis

    发明人： Bart van Schravendijk ,  Harald te Nijenhuis

    IPC分类号： H01L21/76

    CPC分类号： H01L21/76837 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/76224

    摘要： Methods of filling high aspect ratio, narrow width (e.g., sub-50 nm) gaps on a substrate are provided. The methods provide gap fill with little or no incidence of voids, seams or weak spots. According to various embodiments, the methods depositing dielectric material in the gaps to partially fill the gaps, then performing multi-step atomic layer removal process to selectively etch unwanted material deposited on the sidewalls of the gaps. The multi-step atomic layer removal process involves a performing one or more initial atomic layer removal operations to remove unwanted material deposited at the top of the gap, followed by one or more subsequent atomic layer removal operations to remove unwanted material deposited on the sidewalls of the gap. Each atomic layer removal operation involves selectively chemically reacting a portion of the fill material with one or more reactants to form a solid reaction product, which is then removed.

    摘要翻译： 提供填充高纵横比，衬底上的窄宽度（例如，小于50nm）间隙的方法。 这些方法提供空隙填充，空隙，接缝或弱点几乎没有或没有发生。 根据各种实施例，在间隙中沉积介电材料以部分地填充间隙的方法，然后执行多步骤原子层去除工艺以选择性地蚀刻沉积在间隙的侧壁上的不需要的材料。 多步骤原子层去除过程涉及执行一个或多个初始原子层去除操作以去除在间隙的顶部沉积的不需要的材料，随后进行一个或多个后续的原子层去除操作以去除沉积在侧壁上的不需要的材料 差距。 每个原子层去除操作涉及使填充材料的一部分与一种或多种反应物选择性地化学反应以形成固体反应产物，然后将其去除。