摘要:
A method of manufacturing a thin film transistor flat sensor that includes depositing a first metal film on a substrate and forming a common electrode on the substrate with one patterning process; successively depositing an insulating film and a second metal film on the substrate having the common electrode formed thereon, and forming a gate electrode by applying one pattering process to the second metal film; applying one patterning process to the deposited insulating film to form a common electrode insulating layer, wherein a first via hole is formed in the common electrode insulating layer at a location corresponding to the common electrode; depositing a transparent conductive film on the substrate having the common electrode, and forming a first conductive film layer, acting as one polar plate of a storage capacitor, on the common electrode and the gate electrode with one patterning process.
摘要:
A method for manufacturing the display panel and a transfer plate are disclosed, the method includes: fabricating a color resin layer and a first alignment film (21) in this order on a first mother board (2) corresponding to at least two display panels; applying the alignment liquid coated onto the surface of the transfer plate (1) onto the surface of the first mother board (2), so that the first alignment film (22) is formed on the first mother board (2); the transfer plate (1) comprises only one transfer zone correspondingly covering the entire first mother board (2).
摘要:
An array substrate and a transflective liquid crystal display panel. The array substrate includes: a plurality of sub-pixel areas defined by gate lines and data lines distributed across each other, each of the sub-pixel areas comprising a transmission area and a reflection area, wherein, the array substrate further comprises an adjustment module; the adjustment module is configured to transmit an adjustment signal to the reflection area and adjust the reflection area from opaque state to transparent state upon an external light intensity being smaller than a preset light intensity.
摘要:
A backlight module and a display apparatus are provided. The backlight module comprises a backlight source and optical sheets, wherein the backlight source is an organic electroluminescent device, the optical sheets are directly adhered to a light emitting side of the organic electroluminescent device facing a display panel. The light emitted by the organic electroluminescent device is directed emitted after passing through the optical sheets. The display apparatus comprises such a backlight module. A thickness of such backlight module can be efficiently reduced.
摘要:
An embodiment of the present application discloses a capacitive touch panel including a base substrate, on which a plurality of transparent conductive patters being capable of transmitting touch signals and not overlapping with each are provided, and each transparent conductive pattern is an integrated pattern made of a same material layer. An embodiment of the present application further provides a method for manufacturing a capacitive touch panel, which includes forming a plurality of transparent conductive patterns on a base substrate through one mask patterning process. An embodiment of the present application further includes a display device comprising the capacitive touch panel as described above. An embodiment of the present application can save masks and can manufacture capacitive touch panels at a low cost. Furthermore, the embodiments of the present application have advantages of high production efficiency and of high yield rate.
摘要:
A thin film transistor, a manufacturing method thereof and an array substrate are provided. The thin film transistor includes: a gate electrode (102) formed on a substrate (101), a gate insulating layer (103) formed on the gate electrode (102) and covering at least a part of the substrate (101), and a semiconductor layer (105′), a source electrode (107a) and a drain electrode (107b) which are formed on the gate insulating layer (103). The material of the semiconductor layer (105′) is an oxide semiconductor; and the material of the source electrode (107a) and drain electrode (107b) is the oxide semiconductor which is doped. The source electrode (107a), the drain electrode (107b) and the semiconductor layer (105′) are disposed in the same layer.
摘要:
A TFT-LCD assembly substrate comprises an array structure layer, comprising a plurality of first signal lines and a plurality of second signal lines. Adjacent first signal lines and adjacent second signal lines cross each other to define a plurality of combination pixel regions, and each of the combination pixel regions comprises two pixel regions juxtaposed along a direction of the first signal line, and there are a thin film transistor and a pixel electrode formed in one pixel region of the two pixel regions and there is a common electrode formed in the other pixel region.
摘要:
An Oxide TFT, a preparation method thereof, an array substrate and a display device are described. The method includes forming a gate electrode, a gate insulating layer, a channel layer, a barrier layer, as well as a source electrode and a drain electrode on a substrate; the channel layer is formed by depositing an amorphous oxide semiconductor film in a first mixed gas containing H2, Ar and O2. By depositing a channel layer in a first mixed gas containing H2, Ar and O2, the hysteresis phenomenon of the TFT can be mitigated effectively to improve the display quality of the display panel.
摘要:
An amorphous-silicon photoelectric device and a fabricating method thereof are disclosed. The amorphous-silicon photoelectric device includes: a substrate; a thin-film transistor and a photosensor with the photodiode structure, which are provided at different positions on the substrate; and a contact layer; in which the contact layer is located below the photosensor, and the contact layer is partially covered by the photosensor, moreover, the contact layer and the gate-electrode layer in the thin-film transistor are provided in a same layer and of a same material. According to the technical solutions of the present disclosure, the fabricating procedure of an a-Si photoelectric device can be simplified, thereby improving the fabrication efficiency and reducing costs.
摘要:
The present invention provides a substrate fitting process and a substrate assembly to be fitted, wherein the substrate assembly to be fitted of the present invention, a periphery mold frame is disposed on a surface of a substrate, a cell mold frame is disposed inside said periphery mold frame, the height of said cell mold frame is larger than the height of said periphery mold frame. A substrate fitting process of the present invention comprises: providing a cell mold frame on a surface of a first substrate, providing a cell mold frame inside the periphery mold frame for sealing liquid crystal, the height of said cell mold frame is larger than the height of the periphery mold frame; extracting the air between the first substrate and the second substrate; making the first substrate fit with the second substrate preliminarily; filling the air between the first substrate and the second substrate; making the first substrate further fit with the second substrate. With the technical solution of the present invention, the puncture caused by the impact of the in-cell liquid crystal onto the cell mold frame is prevented, and the time and the costs of the process is decreased, meanwhile the probability of the circuit metal wire and the component switch on the liquid crystal panel suffering corrode of the thinning acid is decreased.