公开(公告)号：US06295977B1

公开(公告)日：2001-10-02

申请号：US09434582

申请日：1999-11-04

申请人： Bert Ripper ,  Christian Andrae ,  Karl Egglhuber ,  Holger Lundt ,  Helmut Kölker ,  Jochen Greim

发明人： Bert Ripper ,  Christian Andrae ,  Karl Egglhuber ,  Holger Lundt ,  Helmut Kölker ,  Jochen Greim

IPC分类号： B28D106

CPC分类号： B23D57/0061 ,  B23D57/0046 ,  B28D5/0082 ,  B28D5/045

摘要： A method is for simultaneously cutting off a multiplicity of wafers from a hard, brittle workpiece which has a longitudinal axis and a peripheral surface. The workpiece is guided, by means of a translational relative movement, directed perpendicular to the longitudinal axis, between the workpiece and a wire web of a wire saw with the aid of a feed device, through the wire web which is formed by a sawing wire. The workpiece is rotated about the longitudinal axis while the wafers are being cut off. There is also a wire saw which is suitable for carrying out the method and has a device for holding and for rotating the workpiece about the longitudinal axis.

摘要翻译： 一种方法是同时从具有纵向轴线和外围表面的硬的脆性工件切断多个晶片。 通过平行相对运动，通过平行相对运动，通过平行相对运动，通过由卷绕线形成的线材，借助于进给装置，在垂直于纵向轴线的工件和线锯的线材卷材之间引导工件， 。 当晶片被切断时，工件围绕纵向轴线旋转。 还有一种适用于执行该方法的线锯，并且具有用于保持和围绕纵向轴线旋转工件的装置。

公开(公告)号：US6129609A

公开(公告)日：2000-10-10

申请号：US185328

申请日：1998-11-03

申请人： Bert Ripper ,  Robert Hofmann ,  Peter Lehfeld ,  Holger Lundt

发明人： Bert Ripper ,  Robert Hofmann ,  Peter Lehfeld ,  Holger Lundt

IPC分类号： B24B49/00 ,  B24D13/14 ,  H01L21/304 ,  H01L21/306

CPC分类号： B24B37/08 ,  B24B37/26 ,  B24B49/00 ,  H01L21/30625

摘要： Material removing machining is for wafer shaped workpieces, in particular semiconductor wafers. There is a method for achieving a wear performance which is as linear as possible for a tool which has an essentially planar working surface for the material removing machining of wafer shaped workpieces. The tool has a wear performance which is as linear as possible. There are also a method and a device for measuring a wear profile on an essentially planar working surface for the material removing machining of wafer shaped workpieces. There is also a carrier which is used for the two-sided material removing machining of wafer shaped workpieces.

摘要翻译： 材料去除加工用于晶圆形工件，特别是半导体晶片。 有一种实现磨损性能的方法，该磨损性能对于具有基本上平面的工作表面的工具是尽可能的线性，用于材料去除机加工晶圆形工件。 该工具具有尽可能线性的磨损性能。 还有一种用于测量在基本上平面的工作表面上的磨损轮廓的方法和装置，用于去除晶片形工件的加工。 还有一种用于晶圆形工件的双面材料去除加工的载体。

公开(公告)号：US6159284A

公开(公告)日：2000-12-12

申请号：US318657

申请日：1999-05-25

申请人： Hans Olkrug ,  Holger Lundt ,  Christian Andrae ,  Josef Frumm

发明人： Hans Olkrug ,  Holger Lundt ,  Christian Andrae ,  Josef Frumm

IPC分类号： H01L21/304 ,  B24B47/22 ,  B24B49/12 ,  B28D5/00 ,  C30B33/00 ,  G01N23/20 ,  C30B15/36

CPC分类号： B24B47/22 ,  B24B49/12 ,  B28D5/0058 ,  B28D5/0088 ,  Y10S117/902 ,  Y10T117/1004 ,  Y10T117/1008

摘要： A process and a device will produce a cylindrical single crystal of semicuctor material with the smallest possible alignment error of the crystal lattice. A process for cutting semiconductor wafers from two or more such single crystals is by means of wire sawing. The process for producing the single crystal is as follows: (a) a single crystal with an alignment error of the crystal lattice equal to at most 1.5.degree. is produced; (b) the single crystal is arranged in such a way that the single crystal can be rotated about two axes of rotation, the axes of rotation being perpendicular to two planes that are spanned by two axes of an orthogonal coordinate system with axes x, y and z; (c) the single crystal is rotated about the axes of rotation until the crystal axis is parallel to the x,y plane and parallel to the x,z plane of the coordinate system; (d) pads are fitted to the ends of the single crystal; and (e) the single crystal is rotated about the crystal axis, the single crystal being clamped between the pads in a grinding machine, and a lateral surface of the single crystal is ground until the single crystal has a specific uniform diameter.

摘要翻译： 工艺和器件将产生具有最小可能的晶格对准误差的半导体材料的圆柱形单晶。 通过电线锯切从两个或更多个这种单晶切割半导体晶片的工艺。 单晶的制造方法如下：（a）晶格的取向误差为1.5以下的单晶， （b）单晶被布置成使得单晶可以围绕两个旋转轴旋转，旋转轴垂直于由具有轴线x，y的正交坐标系的两个轴跨过的两个平面 和z; （c）单晶围绕旋转轴旋转，直到晶轴平行于x，y平面并平行于坐标系的x，z平面; （d）垫被安装在单晶的端部; 和（e）单晶围绕晶轴旋转，单晶被夹在研磨机的焊盘之间，并研磨单晶的侧表面，直到单晶具有特定的均匀直径。

公开(公告)号：US06362487B1

公开(公告)日：2002-03-26

申请号：US09318655

申请日：1999-05-25

申请人： Andreas Ehlert ,  Michael Kerstan ,  Holger Lundt ,  Dieter Helmreich

发明人： Andreas Ehlert ,  Michael Kerstan ,  Holger Lundt ,  Dieter Helmreich

IPC分类号： G01N2164

CPC分类号： G01N21/17 ,  C30B33/00 ,  G01N21/6489 ,  G01N21/9501 ,  H01L22/12

摘要： The nondestructive detection and characterization of crystal defects in monocrystalline semiconductor material is by a combination of photoluminescence heterodyne spectroscopy, photothermal heterodyne spectroscopy and SIRD.

摘要翻译： 单晶半导体材料中晶体缺陷的非破坏性检测和表征是通过光致发光外差光谱，光热外差光谱和SIRD的组合。

公开(公告)号：US06773333B2

公开(公告)日：2004-08-10

申请号：US10139210

申请日：2002-05-03

申请人： Holger Lundt ,  Lothar Huber ,  Peter Wiesner

发明人： Holger Lundt ,  Lothar Huber ,  Peter Wiesner

IPC分类号： B24B4900

CPC分类号： B28D5/0076 ,  B28D5/0064

摘要： A method for cutting up a workpiece which is in rod or block form by means of a saw, wherein the temperature of the workpiece is measured during the cutting, and the measurement signal is transmitted to a control unit, which generates a control signal which is used to control the temperature of the workpiece, or wherein the temperature of the workpiece is controlled during the cutting by a control signal based on a predetermined control curve.

摘要翻译： 一种通过锯切成棒状或块状的工件的方法，其中在切割期间测量工件的温度，并将测量信号传送到控制单元，该控制单元产生控制信号，该控制信号是 用于控制工件的温度，或者其中通过基于预定控制曲线的控制信号在切割期间控制工件的温度。

公开(公告)号：US5741173A

公开(公告)日：1998-04-21

申请号：US734687

申请日：1996-10-21

申请人： Holger Lundt ,  Karl Kobler ,  Hanifi Malcok

发明人： Holger Lundt ,  Karl Kobler ,  Hanifi Malcok

IPC分类号： B24B57/02 ,  B23D59/00 ,  B23D59/02 ,  B24B1/04 ,  B24B53/007 ,  B24B53/017 ,  B24D5/12 ,  B28D5/02 ,  B28D7/02 ,  H01L21/00 ,  H01L21/304 ,  H01L21/306

CPC分类号： H01L21/02052 ,  B23D59/001 ,  B23D59/02 ,  B24B1/04 ,  B24B53/017 ,  B24D5/126 ,  H01L21/6715

摘要： A method and an apparatus are for machining semiconductor material with a inding tool while feeding a liquid cleaning agent to the working surface of the grinding tool, has the cleaning agent being exposed to sound waves having a specific frequency and having a specific intensity. In one embodiment of the method, the cleaning agent is exposed to sound waves in at least one nozzle and then the cleaning agent is directed against the working surface of the grinding tool. In another embodiment, the cleaning agent is guided through at least two cleaning agent jets against the working surface of the grinding tool, which cleaning agent jets differ from each other in that they are exposed to sound waves of different frequencies.

摘要翻译： 一种方法和设备用于在将磨料加工到研磨工具的工作表面的同时用研磨工具加工半导体材料，使清洗剂暴露于具有特定频率并具有特定强度的声波。 在该方法的一个实施例中，清洁剂暴露于至少一个喷嘴中的声波，然后清洁剂被引导到研磨工具的工作表面。 在另一个实施例中，清洁剂被引导通过至少两个清洁剂射流抵靠研磨工具的工作表面，该清洁剂喷射相互不同，因为它们暴露于不同频率的声波。