摘要:
Disclosed are methods of purifying a ruthenium containing precursor by removing oxygen from the ruthenium containing precursor by flowing an inert gas through the ruthenium containing precursor. Also disclosed are methods of forming an improved ruthenium containing film using the purified ruthenium containing precursor.
摘要:
The present invention provides for two separate processes for removing impurities from an organic solvent based ruthenium precursor. The first process comprises the steps of contacting the organic solvent based ruthenium precursor with one or more drying agents under an inert gas blanket for a sufficient period of time to allow at least a portion of the impurities in the organic solvent based ruthenium precursor to be adsorbed by the one or more drying agents; and separating the one or more drying agents which have at least a portion of the impurities adsorbed thereon from the organic solvent based ruthenium precursor. The second process comprises the steps of providing a column that contains one or more drying agents and is equipped with a filtration unit; passing the organic solvent based ruthenium precursor through the column in order to allow at least a portion of the impurities in the solvent based ruthenium precursor to be adsorbed by the one or more drying agents, said passing of the solvent based ruthenium precursor taking place under a blanket of inert gas; and further passing the ruthenium precursor through the filtration unit in order ro remove any residual particles that may result from the passage of the ruthenium precursor through the column containing the one or more drying agents in order to obtain a purified ruthenium precursor.
摘要:
Methods and apparatus for the purification and distribution of acetylene. Acetylene is removed from an acetylene storage device, and provided to a purifier where solvent is removed. The purified acetylene is then provided to a semiconductor processing tool.
摘要:
Methods and compositions for the deposition of a film on a substrate. In general, the disclosed compositions and methods utilize a precursor containing calcium or strontium.
摘要:
A source liquid supply apparatus and method that avoids leaving source liquid-and/or cleaning fluid-derived residues in the vicinity of the connection region between the source liquid feed conduit and the source tank. A flow-switching mechanism is attached to the source tank of a source liquid supply apparatus. This flow-switching mechanism has a first port connected to the discharge port conduit of the source tank, a second port connected to a feed conduit, and a third port connected to an exhaust conduit. The first port can be closed by a valve member on a diaphragm disposed within a common compartment while communication is maintained between the second and third ports. A cleaning fluid source and a purge gas source are connected to the feed conduit. Purge gas and cleaning fluid fed into the feed conduit are discharged from the second and third ports and through the exhaust conduit.
摘要:
(Problem) To provide a source liquid supply apparatus that avoids leaving source liquid- and/or cleaning fluid-derived residues in the vicinity of the joint or connection region between the source liquid feed conduit and the source tank. (Solution) A flow-switching mechanism Vc is attached to the source tank 22 of a source liquid supply apparatus 20. This flow-switching mechanism Vc has a first port 33 that is connected to the discharge port conduit 24 of the source tank 22, a second port 34 that is connected to a feed conduit 16, and a third port 35 that is connected to an exhaust conduit 25. The first port 33 can be closed by a valve member 43 on a diaphragm 42 disposed within a common compartment 38 while communication is maintained between the second and third ports 34 and 35. A cleaning fluid source 55 and a purge gas source 57 are connected to the feed conduit 16. Purge gas and cleaning fluid fed into the feed conduit 16 are discharged from the second and third ports 34 and 35 through the exhaust conduit 25.
摘要:
Methods of storing a precursor which decreases the precursor decomposition rate. A vessel is provided, where the vessel has an outer surface made of a first material, and an inner surface made of a second material. The first and second materials are different. A tantalum containing precursor is placed inside the vessel, and the vessel is heated to a temperature between 60° C. and 150° C. At least part of the precursor is withdrawn from the vessel.
摘要:
Methods of storing a precursor which decreases the precursor decomposition rate. A vessel is provided, where the vessel has an outer surface made of a first material, and an inner surface made of a second material. The first and second materials are different. A tantalum containing precursor is placed inside the vessel, and the vessel is heated to a temperature between 60° C. and 150° C. At least part of the precursor is withdrawn from the vessel.