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    Support with recessed electrically conductive chip attachment material for flip-chip bonding a light emitting chip
    1.
    发明授权
    Support with recessed electrically conductive chip attachment material for flip-chip bonding a light emitting chip 失效
    支持嵌入式导电芯片附件材料，用于倒装芯片接合发光芯片

    公开(公告)号：US07635869B2

    公开(公告)日：2009-12-22

    申请号：US11520905

    申请日：2006-09-14

    申请人： Boris Kolodin ,  Michael Hsing ,  Stanton Earl Weaver, Jr. ,  Ivan Eliashevich ,  Srinath K. Aanegola

    发明人： Boris Kolodin ,  Michael Hsing ,  Stanton Earl Weaver, Jr. ,  Ivan Eliashevich ,  Srinath K. Aanegola

    IPC分类号： H01L33/00

    CPC分类号： H01L33/483 ,  H01L33/62 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/00

    摘要： In a light emitting device, a light emitting chip (12, 112) includes a stack of semiconductor layers (14) and an electrode (24, 141, 142) disposed on the stack of semiconductor layers. A support (10, 10′, 110, 210) has a generally planar surface (30) supporting the light emitting chip in a flip-chip fashion. An electrically conductive chip attachment material (40, 41, 141, 142) is recessed into the generally planar surface of the support such that the attachment material does not protrude substantially above the generally planar surface of the support. The attachment material provides electrical communication between the electrode of the light emitting chip and an electrically conductive path (36, 36′) of the support. Optionally, at least the stack of semiconductor layers and the electrode of the light emitting chip are also recessed into the generally planar surface of the support.

    摘要翻译： 在发光器件中，发光芯片（12,112）包括堆叠的半导体层（14）和设置在半导体层堆叠上的电极（24,141,142）。 支撑件（10,10'，110,210）具有以倒装芯片方式支撑发光芯片的大致平坦的表面（30）。 导电芯片附接材料（40,41,141,142）凹入到支撑件的大致平坦的表面中，使得附接材料基本不突出在支撑体的大致平坦的表面上方。 附着材料提供发光芯片的电极与支撑体的导电路径（36,36'）之间的电连通。 可选地，至少半导体层的叠层和发光芯片的电极也凹入到支撑体的大致平坦的表面中。

    Support for flip-chip bonding a light emitting chip
    2.
    发明申请
    Support for flip-chip bonding a light emitting chip 失效
    支持倒装芯片连接发光芯片

    公开(公告)号：US20080067537A1

    公开(公告)日：2008-03-20

    申请号：US11520905

    申请日：2006-09-14

    申请人： Boris Kolodin ,  Michael Hsing ,  Stanton Earl Weaver ,  Ivan Eliashevich ,  Srinath K. Aanegola

    发明人： Boris Kolodin ,  Michael Hsing ,  Stanton Earl Weaver ,  Ivan Eliashevich ,  Srinath K. Aanegola

    IPC分类号： H01L33/00 ,  H01L21/00

    CPC分类号： H01L33/483 ,  H01L33/62 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/00

    摘要： In a light emitting device, a light emitting chip (12, 112) includes a stack of semiconductor layers (14) and an electrode (24, 141, 142) disposed on the stack of semiconductor layers. A support (10, 10′, 110, 210) has a generally planar surface (30) supporting the light emitting chip in a flip-chip fashion. An electrically conductive chip attachment material (40, 41, 141, 142) is recessed into the generally planar surface of the support such that the attachment material does not protrude substantially above the generally planar surface of the support. The attachment material provides electrical communication between the electrode of the light emitting chip and an electrically conductive path (36, 36′) of the support. Optionally, at least the stack of semiconductor layers and the electrode of the light emitting chip are also recessed into the generally planar surface of the support.

    摘要翻译： 在发光器件中，发光芯片（12,112）包括堆叠的半导体层（14）和设置在半导体层堆叠上的电极（24,141,142）。 支撑件（10,10'，110,210）具有以倒装芯片方式支撑发光芯片的大致平坦的表面（30）。 导电芯片附接材料（40,41,141,142）凹入到支撑件的大致平坦的表面中，使得附接材料基本不突出在支撑体的大致平坦的表面上方。 附着材料提供发光芯片的电极与支撑体的导电路径（36,36'）之间的电连通。 可选地，至少半导体层的叠层和发光芯片的电极也凹入到支撑体的大致平坦的表面中。

    BACKLIGHTING LED POWER DEVICES
    8.
    发明申请
    BACKLIGHTING LED POWER DEVICES 审中-公开
    背光LED电源设备

    公开(公告)号：US20090147513A1

    公开(公告)日：2009-06-11

    申请号：US11950955

    申请日：2007-12-05

    申请人： Boris Kolodin ,  Emil Radkov ,  Srinath K. Aanegola ,  Matthew L. Sommers ,  Mark J. Mayer ,  Christopher L. Bohler

    发明人： Boris Kolodin ,  Emil Radkov ,  Srinath K. Aanegola ,  Matthew L. Sommers ,  Mark J. Mayer ,  Christopher L. Bohler

    IPC分类号： F21V7/00 ,  F21V5/00 ,  F21V9/16

    CPC分类号： G02F1/133603 ,  G02B6/0021 ,  G02B6/0031 ,  G02F1/133605 ,  G02F1/133606 ,  G02F2001/133614

    摘要： A generally planar illumination, display, or backlighting device is disclosed, including a generally planar arrangement of side emitting light emitting diode (LED) devices generating side emitted illumination, and a generally planar arrangement of wavelength conversion elements arranged coplanar with the generally planar arrangement of side emitting light emitting diode (LED) devices. The wavelength conversion elements are interspersed amongst the side emitting LED devices and configured to wavelength convert the side emitted illumination generated by the side emitting LED devices. A display device using such a generally planar illumination device is also disclosed, in which a liquid crystal display (LCD) panel is backlit by the generally planar illumination device.

    摘要翻译： 公开了一种大体上平面的照明，显示器或背光装置，包括产生侧发射照明的侧发射发光二极管（LED）器件的大致平面布置，以及布置为与平面布置共面的波长转换元件 侧发光二极管（LED）装置。 波长转换元件分散在侧面发射LED器件中并且被配置为波长转换由侧向发射LED器件产生的侧发射照明。 还公开了一种使用这种大致平面的照明装置的显示装置，其中液晶显示器（LCD）面板由大体上平面的照明装置背光。

    Flip chip light emitting diode devices having thinned or removed substrates
    9.
    发明申请
    Flip chip light emitting diode devices having thinned or removed substrates 有权
    倒装芯片发光二极管器件具有减薄或移除的衬底

    公开(公告)号：US20050023550A1

    公开(公告)日：2005-02-03

    申请号：US10899864

    申请日：2004-07-27

    申请人： Ivan Eliashevich ,  Boris Kolodin ,  Emil Stefanov

    发明人： Ivan Eliashevich ,  Boris Kolodin ,  Emil Stefanov

    IPC分类号： H01L21/00 ,  H01L25/075 ,  H01L33/00 ,  H01L33/62

    CPC分类号： H01L25/0753 ,  H01L33/0079 ,  H01L33/62 ,  H01L2224/16 ,  H01L2224/48091 ,  H01L2924/00014

    摘要： In a method for fabricating a flip-chip light emitting diode device, epitaxial layers (14, 114) are deposited on a growth substrate (16, 116) to produce an epitaxial wafer. A plurality of light emitting diode devices are fabricated on the epitaxial wafer. The epitaxial wafer is diced to generate a device die (10, 110). The device die (10, 110) is flip chip bonded to a mount (12, 112). The flip chip bonding includes securing the device die (10, 110) to the mount (12, 112) by bonding at least one electrode (20, 22, 120) of the device die (10, 110) to at least one bonding pad (26, 28, 126) of the mount (12, 112). Subsequent to the flip chip bonding, a thickness of the growth substrate (16, 116) of the device die (10, 110) is reduced.

    摘要翻译： 在制造倒装芯片发光二极管器件的方法中，外延层（14,114）沉积在生长衬底（16,116）上以产生外延晶片。 在外延晶片上制造多个发光二极管器件。 切割外延晶片以产生器件管芯（10,110）。 器件管芯（10,110）被倒装芯片结合到安装件（12,112）上。 倒装芯片接合包括通过将器件管芯（10,110）的至少一个电极（20,22，120）粘合到至少一个焊盘（10,110）上来将器件管芯（10,110）固定到安装座（12,112） （12,112）的底部（26,28,126）。 在倒装芯片接合之后，器件管芯（10,110）的生长衬底（16,116）的厚度减小。

    Flip chip light emitting diode devices having thinned or removed substrates
    10.
    发明授权
    Flip chip light emitting diode devices having thinned or removed substrates 有权
    倒装芯片发光二极管器件具有减薄或移除的衬底

    公开(公告)号：US07456035B2

    公开(公告)日：2008-11-25

    申请号：US10899864

    申请日：2004-07-27

    申请人： Ivan Eliashevich ,  Boris Kolodin ,  Emil P. Stefanov

    发明人： Ivan Eliashevich ,  Boris Kolodin ,  Emil P. Stefanov

    IPC分类号： H01L21/00

    CPC分类号： H01L25/0753 ,  H01L33/0079 ,  H01L33/62 ,  H01L2224/16 ,  H01L2224/48091 ,  H01L2924/00014

    摘要： In a method for fabricating a flip-chip light emitting diode device, epitaxial layers (14, 114) are deposited on a growth substrate (16, 116) to produce an epitaxial wafer. A plurality of light emitting diode devices are fabricated on the epitaxial wafer. The epitaxial wafer is diced to generate a device die (10, 110). The device die (10, 110) is flip chip bonded to a mount (12, 112). The flip chip bonding includes securing the device die (10, 110) to the mount (12, 112) by bonding at least one electrode (20, 22, 120) of the device die (10, 110) to at least one bonding pad (26, 28, 126) of the mount (12, 112). Subsequent to the flip chip bonding, a thickness of the growth substrate (16, 116) of the device die (10, 110) is reduced.

    摘要翻译： 在制造倒装芯片发光二极管器件的方法中，外延层（14,114）沉积在生长衬底（16,116）上以产生外延晶片。 在外延晶片上制造多个发光二极管器件。 切割外延晶片以产生器件管芯（10,110）。 器件管芯（10,110）被倒装芯片结合到安装件（12,112）上。 倒装芯片接合包括通过将器件管芯（10,110）的至少一个电极（20,22，120）粘合到至少一个焊盘（10,110）上来将器件管芯（10,110）固定到安装座（12,112） （12,112）的底部（26,28,126）。 在倒装芯片接合之后，器件管芯（10,110）的生长衬底（16,116）的厚度减小。